CaCu3Ti4O12 thin films with non-linear resistivity deposited by RF-sputtering

Calcium copper titanate, CaCu3Ti4O12, CCTO, thin films with polycrystalline nature have been deposited by RF sputtering on Pt/Ti/SiO2/Si (100) substrates at a room temperature followed by annealing at 600 °C for 2 h in a conventional furnace. The CCTO thin film present a cubic structure with lattice parameter a = 7.379 ±0.001 Å free of secondary phases. The observed electrical features of CCTO thin films are highly dependent on the [CaO12], [CaO 4], [CuO11], [CuO11Vx 0] and [TiO5.VO] clusters. The CCTO film capacitor showed a dielectric loss of 0.40 and a dielectric permittivity of 70 at 1 kHz. The J-V behavior is completely symmetrical, regardless of whether the conduction is limited by interfacial barriers or by bulk-like mechanisms. © 2013 Elsevier B.V. All rights reserved.

Eumelanin thin films: Solution-processing, growth, and charge transport properties

Eumelanin pigments show hydration-dependent conductivity, broad-band UV-vis absorption, and chelation of metal ions. Solution-processing of synthetic eumelanins opens new possibilities for the characterization of eumelanin in thin film form and its integration into bioelectronic devices. We investigate the effect of different synthesis routes and processing solvents on the growth, the morphology, and the chemical composition of eumelanin thin films using atomic force microscopy and X-ray photoelectron spectroscopy. We further characterize the films by transient electrical current measurements obtained at 50% to 90% relative humidity, relevant for bioelectronic applications. We show that the use of dimethyl sulfoxide is preferable over ammonia solution as processing solvent, yielding homogeneous films with surface roughnesses below 0.5 nm and a chemical composition in agreement with the eumelanin molecular structure. These eumelanin films grow in a quasi layer-by-layer mode, each layer being composed of nanoaggregates, 1-2 nm high, 10-30 nm large. The transient electrical measurements using a planar two-electrode device suggest that there are two contributions to the current, electronic and ionic, the latter being increasingly dominant at higher hydration, and point to the importance of time-dependent electrical characterization of eumelanin films. This journal is © 2013 The Royal Society of Chemistry.

Influence of ethanol and glycerol concentration over functional and structural properties of zein-oleic acid films

This study was performed in order to determine the effect of the addition of different concentrations of glycerol and ethanol over functional and structural properties of zein-oleic acid films. Films were prepared from zein and oleic acid formulations, containing: 0, 10, 20 and 30% (w/w) of glycerol as plasticizer and 75, 80, 85, 90 and 95% (v/v) of ethanol as zein solvent. Water vapor permeability (WVP) at 4 and 24 C, opacity, water solubility and structural behavior of the film were assessed. The film water barrier properties, WVP and water solubility, were increased when higher ethanol concentration and lower glycerol concentration were used. Furthermore, WVP at 4 C was lower than WVP at 24 C due to the crystalline solid state of oleic acid at lower temperatures. Likewise, opacity, homogeneity and structure of the composite film were improved as ethanol increased and glycerol lowered. © 2013 Elsevier B.V. All rights reserved.

Construção de uma junção Josephson em filmes finos supercondutores do sistema Bi1.8Pb0.4Sr2CaCu2Ox tratados termicamente em um forno microondas doméstico

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Caracterização de filmes finos de ZnO dopados com Al e Mn depositados em substrato vítreo pelo método de Spray Pirólise

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo dos sistemas integrados de filmes finos óxidos em substratos poliméricos

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Preparação de filmes finos ferroelétricos de SrBi2'('TA IND.1-x''NB IND.x)ÍND.2 'O IND.9' puro e dopado com tungstênio, obtidos pelo método dos precursores poliméricos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Photoluminescence emission at room temperature in zinc oxide nano-columns

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Sn(1-x)LaxO2 thin films deposited on AISI 304 stainless steel substrates

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Growth and Characterization of Silicon Carbide Thin Films Using a Nontraditional Hollow Cathode Sputtering Technique

Silicon carbide (SiC) is considered a suitable candidate for high-power, high-frequency devices due to its wide bandgap, high breakdown field, and high electron mobility. It also has the unique ability to synthesize graphene on its surface by subliming Si during an annealing stage. The deposition of SiC is most often carried out using chemical vapor deposition (CVD) techniques, but little research has been explored with respect to the sputtering of SiC. Investigations of the thin film depositions of SiC from pulse sputtering a hollow cathode SiC target are presented. Although there are many different polytypes of SiC, techniques are discussed that were used to identify the film polytype on both 4H-SiC substrates and Si substrates. Results are presented about the ability to incorporate Ge into the growing SiC films for the purpose of creating a possible heterojunction device with pure SiC. Efforts to synthesize graphene on these films are introduced and reasons for the inability to create it are discussed. Analysis mainly includes crystallographic and morphological studies about the deposited films and their quality using x-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM), scanning electron microscopy (SEM), atomic force microscopy (AFM), Auger electron spectroscopy (AES) and Raman spectroscopy. Optical and electrical properties are also discussed via ellipsometric modeling and resistivity measurements. The general interpretation of these analytical experiments indicates that the films are not single crystal. However, the majority of the films, which proved to be the 3C-SiC polytype, were grown in a highly ordered and highly textured manner on both (111) and (110) Si substrates.

Stability of Order in Solvent-Annealed Block Copolymer Thin Films

ABSTRACT: One way to produce high order in a block copolymer thin film is by solution casting a thin film and slowly evaporating the solvent in a sealed vessel. Such a solvent-annealing process is a versatile method to produce a highly ordered thin film of a block copolymer. However, the ordered structure of the film degrades over time when stored under ambient conditions. Remarkably, this aging process occurs in mesoscale thin films of polystyrene-polyisoprene triblock copolymer where the monolayer of vitrified 15 nm diameter polystyrene cylinders sink in a 20 nm thick film at 22 °C. The transformation is studied by atomic force microscopy (AFM). We describe the phenomena, characterize the aging process, and propose a semiquantitative model to explain the observations. The residual solvent effects are important but not the primary driving force for the aging process. The study may lead to effective avenue to improve order and make the morphology robust and possibly the solvent-annealing process more effective.

MEH-PPV Thin Films for Radiation Sensor Applications

This work deals with MEH-PPV thin films to be used as gamma radiation sensors. The polymer thin films with two different thicknesses (30 and 100 nm) were irradiated at room temperature with different gamma radiation doses (up to 25 kGy). Optical properties of the material were investigated with FTIR and UV-Vis absorption spectroscopy. Results show that gamma radiation does not degrade substantially the thin-film material, suggesting that a crosslink effect may be occurring. The characteristic absorption peak of MEH-PPV, around 500 nm is shifted to shorter wavelengths with the increase of gamma radiation doses for both thicknesses samples. The 30-nm-thick samples showed a larger variation absorbance at a specific wavelength and a larger peak shift. These results indicate their potential for use in monitoring the radiation doses used on the sterilization of health care products.

Opto-electrical properties of single layer flexible electroluminescence device with ruthenium complex

In this work, a ruthenium hexafluorophosphate complex, [Ru(bpy)(3)](PF6)(2) in poly(methylmethacrylate) (PMMA) was employed to build a single layer light electrochemical cell on indium tin oxide polyester flexible substrate. The electroluminescence spectrum features a relatively broad band peaked near 625 run, with CIE (x,y) color coordinates of (0.61,0.39). The driving voltage is only 3 V, and for the maximum electrical current of 10 mA the brightness reaches 1 cd/m(2). Regarding the useful application of the device, its opto-electrical behavior under mechanical strain was studied considering the central curvature. In these situations, both electrical characterization in DC mode and luminance were analyzed. (C) 2007 Elsevier B.V. All rights reserved.

Organic light emitting diodes with europium (III) emissive layers based on beta-diketonate complexes: The influence of the central ligand

This work shows a comparative study of organic light emitting diodes based on four different europium complexes with the general formula, Eu(CLs)(3)bipyridine, where the central ligands are DBM [tris(dibenzoylmethane)], TTA [tris(1-(2-thieneyl)-4,4,4-trifluoro-1,3-butanedione)], NTA [tris(1-(2-naphthoyl)-3,3,3-trifluoroacetone)] and BTA [tris(1-(2-benzoyl)-3,3,3-trifluoroacetone)]. All devices have a driving voltage of 14-16 V, a very low electrical current at normal operation (less than 1 mA) and a good Wall Plug Efficiency (up to near 10(-3)%). The most suitable central ligand was found to be DBM, with an optical power up to 200 nW (at 612 nm). The BTA exhibits the lowest stability under high applied voltages. The other central ligands have similar results among them. The electroluminescence spectra clearly show the europium ion transitions (with a strong (5)D(0) -> (7)F(2) line) with a CIE color coordinate around (0.56, 0.34). (C) 2008 Elsevier B.V. All rights reserved.