Novel folding large-scale optical switch matrix with total internal reflection mirrors on silicon-on-insulator by anisotropy chemical etching

A compact optical switch matrix was designed, in which light circuits were folded by total internal reflective (TIR) mirrors. Two key elements, 2 x 2 switch and TIR mirror, have been fabricated on silicon-on-insulator wafer by anisotropy chemical etching. The 2 x 2 switch showed very low power consumption of 140 mW and a very high speed of 8 +/- 1 mus. An improved design for the TIR mirror was developed, and the fabricated mirror with smooth and vertical reflective facet showed low excess loss of 0.7 +/- 0.3 dB at 1.55 mum.

GaN1-xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition

GaN1-xPx ternary alloys with high P compositions were deposited on sapphire substrates by means of metal-organic chemical vapor deposition. Depth profiles of the elements indicate that the maximum P/N composition ratio is about 17% and a uniform distribution of the P atoms in the alloys is achieved. 2theta/omega XRD spectra demonstrate that the (0002) peak of the GaN1-xPx alloys shifts to smaller angle with increasing P composition. From the photoluminescence (PL) spectra, the red shifts to the bandedge emission of GaN are determined to be 73, 78, 100 and 87 meV for the GaN1-xPx alloys with the P/N composition ratios of 3%, 11%, 15% and 17%, respectively. No PL peak related to GaP is observed, indicating that the phase separation between GaN and GaP is well suppressed in our GaN1-xPx samples. (C) 2003 Elsevier Science B.V. All rights reserved.

Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-GaN

In our recent report, [Xu , Appl. Phys. Lett. 76, 152 (2000)], profile distributions of five elements in the GaN/sapphire system have been obtained using secondary ion-mass spectroscopy. The results suggested that a thin degenerate n(+) layer at the interface is the main source of the n-type conductivity for the whole film. The further studies in this article show that this n(+) conductivity is not only from the contribution of nitride-site oxygen (O-N), but also from the gallium-site silicon (Si-Ga) donors, with activation energies 2 meV (for O-N) and 42 meV (for Si-Ga), respectively. On the other hand, Al incorporated on the Ga sublattice reduces the concentration of compensating Ga-vacancy acceptors. The two-donor two-layer conduction, including Hall carrier concentration and mobility, has been modeled by separating the GaN film into a thin interface layer and a main bulk layer of the GaN film. The bulk layer conductivity is to be found mainly from a near-surface thin layer and is temperature dependent. Si-Ga and O-N should also be shallow donors and V-Ga-O or V-Ga-Al should be compensation sites in the bulk layer. The best fits for the Hall mobility and the Hall concentration in the bulk layer were obtained by taking the acceptor concentration N-A=1.8x10(17) cm(-3), the second donor concentration N-D2=1.0x10(18) cm(-3), and the compensation ratio C=N-A/N-D1=0.6, which is consistent with Rode's theory. Saturation of carriers and the low value of carrier mobility at low temperature can also be well explained. (C) 2001 American Institute of Physics.

Species transformation of trace elements and their distribution prediction in dyestuff residue incineration

The release of heavy metals from the combustion of hazardous wastes is an environmental issue of increasing concern. The species transformation characteristics of toxic heavy metals and their distribution are considered to be a complex problem of mechanism. The behavior of hazardous dyestuff residue is investigated in a tubular furnace under the general condition of hazardous waste pyrolysis and gasfication. Data interpretation has been aided by parallel theoretical study based on a thermodynamic equilibrium model based on the principle of Gibbs free energy minimization. The results show that Ni, Zn, Mn, and Cr are more enriched in dyestuff residue incineration than other heavy metals (Hg, As, and Se) subjected to volatilization. The thermodynamic model calculation is used for explaining the experiment data at 800 degrees C and analyzing species transformation of heavy metals. These results of species transformation are used to predict the distribution and emission characteristics of trace elements. Although most trace element predictions are validated by the measurements, cautions are in order due to the complexity of incineration systems.

Extraction kinetics of rare earth elements with sec-octylphenoxy acetic acid

The kinetics of RE (La, Gd, Er, Yb and Y) extraction with sec-octylphenoxy acetic acid was investigated using a constant interfacial area cell with laminar flow at 303 K. The natures of the extracted complexes have some effect on the extraction rate which is controlled by the reaction rate of M(III) and extractant molecules at two-phase interface for Er(III), Yb(III) and Y(III), by a mixed chemical reaction-diffusion for Gd(III) and a diffusion for La( III). The extractant molecules tend to adsorb at the interface. So an interfacial extraction reaction model was derived.

Relationship between chemical bond parameters and superconducting temperature in HgBa2Can-1CunO2n+2+delta (n=1, 2, 3, 4)

Bond covalency and valence of elements in HgBa2Can-1CunO2n+2+delta (n = 1, 2, 3, 4) were calculated and their relationship with T-c was discussed. For both oxygen and argon annealed samples, the results indicated that with the increase of n, the trend of bond covalency of Hg-O and Cu-O was the same or opposite compared with that of superconducting temperature. This may suggest that the magnitudes of Cu-O and Hg-O bond covalency are important in governing the superconducting temperature. For the highest T-c sample, Hg had the lowest valence, implying that lower valence of Hg was preferred in order to produce higher T-c. For fixed n, the valence of Cu in oxygen annealed samples was larger than that in argon annealed samples, indicating that oxygen annealed samples produced more carriers than argon annealed samples.

Valence of elements in HgBa2Can-1CunO2n+2+delta (n=1, 2, 3, 4)

Valence of elements in HgBa2Can-1CunO2n+2+delta (n=1, 2, 3, 4) (both argon and oxygen annealed samples) were calculated. The result indicated for both argon and oxygen annealed samples, Hg had the lowest valence for the highest T-c sample. For fixed n, the valence of Cu in oxygen annealed samples was larger than that in argon annealed samples, indicating that oxygen annealed samples produce more carriers than argon annealed samples.

Chemical bond parameters in Sr3MRhO6 (M=rare earth)

Chemical bond parameters, that is, bond covalency, bond valence, macroscopic linear susceptibility, and oxidation states of elements in Sr3MRhO6 (M=Sm, Eu, Tb, Dy, Ho, Er, Yb) have been calculated. The results indicate that the bond covalency of M-O decreases sharply with the decrease of ionic radius of M3+ from Sm to Yb, while no obvious trend has been found for Rh-O and Sr-O bonds. The global instability index indicates that the crystal structures of Sr(3)MrhO(6) (M = Sm, Eu, Tb, Dy, Ho) have strained bonds.

Physico-chemical properties and catalytic behavior of LnSrNiO(4) mixed oxides for NO decomposition

A series of LnSrNiO(4)(A(2)BO(4), Ln = La, Pr, Nd, Sm, Gd) mixed oxides with K2NiF4 structure, in which A-site(Sr) was partly substituted by individual light rare earth element, was prepared. The solid state physico-chemical properties including crystal structure, defect structure, IR spectrum, valence state of H-site ion, nonstoichiometric oxygen, oxygenous species, the properties of oxidation and reduction etc. as well as the catalytic behavior for NO decomposition on these mixed oxides were investigated. The results show that all of these mixed oxide catalysts have high activity for the direct decomposition of NO(at 900 degrees C the conversion of NO is more than 90%). The effect of the substitution of light rare earth elements at A-site on catalytic behavior for NO decomposition was elucidated.

Determination of multiple trace elements in seawater using chelation ion chromatography and ICP-MS

An off-line chelation system combined with ICP-MS technique was developed for the quantitative determination of trace elements in seawater, namely V, Co, Ni, Cu, Zn, Mo, Cd, Pb, U and rare earth elements(REEs). The system was built based on an ion chromatography equipped with MetPac((R)) CC-I chelation columns which had a strong selective chelation to these target elements within a pH range 5.2-5.6. Acidified seawater samples and NH4Ac(2 mol/L) were blended to meet suitable pH before being injected into the chelation column, thus target elements were retained while alkali and alkaline metals were excluded. Then chelated elements were eluted by HNO3 (1 mol/L) and samples were collected for ICP-MS analysis. Varying the ratio of input( gen. 200 mL) to output( gen. 5 mL), the target elements which were concentrated as 40 times as their concentrations were far beyond instrumental quantification limits. At last, a certificated seawater CASS-4 was introduced and our detected values were in good agreement with those certified values.

The distribution, enrichment and source of potential harmful elements in surface sediments of Bohai Bay, North China

A geochemical study of Bohai Bay surface sediments was carried out to analyze the potential harmful element (PHE: Ge, Mo, In, Sn, Sb,Te, Tl, Bi and V) concentrations, transportation and deposition, enrichment factors and sources. Germanium, Mo, In, Sn, Sb, Te, Tl, Bi and V concentrations in the surface sediments were: 1.43-1.71, 0.52-1.43, 0.04-0.12, 2.77-4.14, 1.14-2.29, 0.027-0.085, 0.506-0.770, 0.27-0.63 and 70.35-115.90 mu g/g, respectively. The distributions of total PHE concentrations, together with sequential extraction analyses, showed that the PHEs were mainly due to natural inputs from the continental weathering delivered to the bay by rivers and atmospheric transportation and deposition. However, high Mo, Sb, Te, Bi and V occurred in non-residual fractions, suggesting some anthropogenic inputs in addition to the natural inputs. Besides sources, the distributions of PHEs were influenced by the coupling of physical, chemical and biological processes. Enrichment factor (EF) was computed for each site for each element in order to assess the polluting elements and the degree of pollution at each site. Results revealed that the EFs were generally lower than 1.0, particularly for Ge, Mo, In, Sn, Tl and V; however, the EFs were higher (>1.5), particularly for Sb, Te and Bi, revealing moderate contamination. (C) 2010 Elsevier B.V. All rights reserved.