Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers

Using spatially resolved cathodoluminescence spectroscopy, we investigate the spatial luminescence distribution in a fully strained (In,Ga)N layer, in particular, its correlation with the distribution of threading dislocations (TDs). Regarding the impact of TDs on the luminescence properties, we can clearly distinguish between pure edge-type TDs and TDs with screw component. At the positions of both types of TDs, we establish nonradiative recombination sinks. The radius for carrier capture is at least four times larger for TDs with screw component as for pure edge-type TDs. The large capture radius of the former is due to a spiral-like growth mode resulting in an increase in the In content in the center of the spiral domains in comparison to their periphery.

Photoluminescence investigation of InAs bimodal self-assembled quantum dots state filling

Self-assembled InAs quantum dots were prepared on GaAS(100)) substrate in a solid source molecular beam epitaxy system The distribution and topographic images of uncapped dots were studied by atomic force microscope. The statistical result shows that the quantum dots are bimodal distribution. The photoluminescence spectrum results shows that the intensity of small size quantum dots dominated, which may be due to: (1) the state density of large quantum dots lower than that of small quantum dots; (2) the carriers capture rate of large size quantum dots is small relative to that of small ones; (3) there is a large strain barrier between large quantum dots and capping layer, and the large strain is likely to produce the defect and dislocation, resulting in a probability carriers transferring from large quantum dots to small dots that is very small with temperature increasing.

Effect of inter-level relaxation and cavity length on double-state lasing performance of quantum dot lasers

Double-state lasing phenomena are easily observed in self-assembled quantum dot (QD) lasers. The effect of inter-level relaxation rate and cavity length on the double-state lasing performance of QD lasers is investigated on the basis of a rate equation model. Calculated results show that, for a certain cavity length, the ground state (GS) lasing threshold current increases almost linearly with the inter-level relaxation lifetime. However, as the relaxation rate becomes slower, the ratio of excited state (ES) lasing threshold current over the GS one decreases, showing an evident exponential behavior. A relatively feasible method to estimate the inter-level relaxation lifetime, which is difficult to measure directly, is provided. In addition, fast inter-level relaxation is favorable for the GS single-mode lasing, and leads to lower wetting layer (WL) carrier occupation probability and higher QD GS capture efficiency and external differential quantum efficiency. Besides, the double-state lasing effect strongly depends on the cavity length. (c) 2007 Elsevier B.V. All rights reserved.

Detection of efficient carrier capture in ultrathin InAs/GaAs layers using a degenerate pump-probe technique

By analysing the carrier dynamics based on the rate equations and the change of the refractive index due to the efficient carrier capture, we have calculated the carrier capture process in the InAs/GaAs system detected by a simple degenerate pump-probe technique. The calculated results are found to be in good agreement with the experimental findings. Our results indicate that this simple technique, with the clear advantage of being easy to carry out, can be very useful in studying the carrier dynamics for some specific structures such as InAs ultrathin layers embedded in a GaAs matrix described here.

Study of rapid carrier capture and relaxation in InAs/GaAs heterostructures

The rapid carrier capture and relaxation processes in InAs/GaAs quantum dots were studied at 77K by using a simple degenerate pump-probe technique. A rising process was observed in the transient reflectivity, following the initial fast relaxation associated with GaAs bulk matrix, and this rising process was assigned to be related to the carrier capture from the GaAs barriers to InAs layers. The assignment was modeled using Kramers-Kronig relation. By analyzing the rising process observed in the transient reflectivity, the carrier capture time constants were obtained. The measured capture times decrease with the increase of carrier concentration.

Carrier capture into InAs/GaAs quantum dots detected by a simple degenerate pump-probe technique

We demonstrate that the carrier capture and relaxation processes in InAs/GaAs quantum dots can be detected by a simple degenerate pump-probe technique. We have observed a rising process in the transient reflectivity, following the initial fast relaxation in a GaAs matrix, and assigned this rising process to the carrier capture from the GaAs barriers to the InAs layers. The assignment was modeled using the Kramers-Kronig relations. The capture time was found to depend strongly on the InAs layer thickness as well as on the excitation density and photon energy. (C) 2000 Elsevier Science Ltd. All rights reserved.

Hole capture barrier of self-organized InAs quantum dots

Deep level transient spectroscopy (DLTS) technique was successfully applied to characterize the electric properties of p type self-organized InAs quantum dots. The ground state energy and capture barrier energy of hole of quantum dots were measured for the first time. The energy of ground state of 2.5ML InAs quantum dots with respect to the valence band of bulk GaAs was obtained being about 0.09eV, and there was a barrier associated to the change of charge state of quantum dots. The capture barrier energy of such dots for hole was about 0.26eV. The work is very meaningful for further understanding the intrinsic properties of quantum dots.

Ultrafast low-temperature grown AlGaAs/GaAs photorefractive quantum wells using point defects as capture centers

At a medium substrate temperature of 400 degrees C and a lower As flux, we have grown an ultrafast AlGaAs/GaAs photorefractive multiple quantum well (MQW) structure by molecular beam epitaxy. The as-grown sample exhibits strong photorefractive effect under the transverse Frantz-Keldysh geometry. A peak electroabsorption of 2100 cm(-1) is measured in the as-grown sample in an 11 kV/cm dc electric field, and the peak photorefractive diffraction efficiency can be 1.2%. After postgrowth annealing, the photorefractive effect becomes weak and disappears in samples annealed above 700 degrees C. Using optical transient current spectroscopy, deep levels are measured in these samples. It is found that deep levels are stable against annealing until 700 degrees C. Using a pump-probe technique, carrier lifetimes are measured at room temperature. We find that the as-grown sample has a lifetime of 20 ps, while the 700 degrees C annealed sample has a lifetime of more than 200 ps. The ultrafast lifetime in the as-grown sample is caused by point defects, not by As clusters. Our result show that AlGaAs/GaAs MQW structure grown around 400 degrees C has better performance of the photorefractive effect. (C) 1999 American Institute of Physics. [S0003-6951(99)04036-X].

A New High Order Accurate Shock Capture Method with Wave Booster

A new kind of shock capturing method is developed. Before applying the high order accurate traditional scheme which is called as base scheme in this paper the fluid parameters are preconditioned in order to control the group velocity. The newly constructed scheme is high order accurate, simple, has high resolution of the shock, and less computer time consumed.