Monitoring Himalayan cryosphere using remote sensing techniques

In the Himalayas, large area is covered by glaciers, seasonal snow and changes in its extent can influence availability of water in the Himalayan Rivers. In this paper, changes in glacial extent, glacial mass balance and seasonal snow cover have been discussed. Field and satellite based investigations suggest, most of the Himalayan glaciers are retreating though the rate of retreat is varying from glacier to glacier, ranging from few meters to almost 50 meters per year, depending upon the numerous glacial, terrain and meteorological parameters. Retreat was estimated for 1868 glaciers in eleven basins distributed across the Indian Himalaya since 1962 to 2001/02. Estimates show an overall reduction in glacier area from 6332 to 5329 sq km, an overall deglaciation of 16 percent.Snow line at the end of ablation season on the Chhota Shigri glacier suggests a change in altitude from 4900 to 5200 m from late 1970’s to the present. Seasonal snow cover monitoring of the Himalaya has shown large amounts of snow cover depletion in early part of winter, i.e. from October to December. For many basins located in lower altitude and in south of Pir Panjal range, snow ablation was observed through out the winter season. In addition, average stream runoff of the Baspa basin during the month of December shows an increase by 75 per cent. This combination of glacial retreat, negative mass balance, early melting of seasonal snow cover and winter time increase in stream runoff suggest an influence of climate change on the Himalayan cryosphere.

Vegetative phenology of tropical montane forests in the Nilgiris, South India

Spatial and temporal variation in foliar phenology plays a significant role in growth and reproduction of a plant species. Foliar phenology is strongly influenced by environmental factors such as rainfall. A study on phenology of tropical montane forests was undertaken in three different forest patches of the Nilgiri Mountains in peninsular India above 2000 meters ASL. Since August 2000, 500 trees belonging to 70 species of angiosperms were monitored for both vegetative and reproductive phenologies on a monthly basis. Climate data were collected from nearby weather stations. This paper reports results of the study from August 2000 - August 2003 on foliar phenology. Non-parametric correlations and multiple regressions were performed to analyse the influence of environmental factors such as rainfall, temperature and sunshine on foliar phenology. It was found that moisture related factors had a negative influence on the leaf initiation. Circular statistical analyses were performed to understand the seasonality in different phenophases of foliar phenology. Different phenophases of leafing were not significantly seasonal. Results are discussed and compared among three different forest patches on the Nilgiri plateau and also with other montane forest patches across the globe.

Optical, electrical and structural characterization of ZnO:Al thin films prepared by a low cost sol-gel method

ZnO:Al thin films were prepared on glass and silicon substrates by the sol-gel spin coating method. The x-ray diffraction (XRD) results showed that a polycrystalline phase with a hexagonal structure appeared after annealing at 400 degrees C for 1 h. The transmittance increased from 91 to about 93% from pure ZnO films to ZnO film doped with 1 wt% Al and then decreased for 2 wt% Al. The optical band gap energy increased as the doping concentration was increased from 0.5 wt% to 1 wt% Al. The metal oxide semiconductor (MOS) capacitors were fabricated using ZnO films deposited on silicon (100) substrates and electrical properties such as current versus voltage (I-V) and capacitance versus voltage (C-V) characteristics were studied. The electrical resistivity decreased and the leakage current increased with an increase of annealing temperature. The dielectric constant was found to be 3.12 measured at 1 MHz. The dissipation value for the film annealed at 300 degrees C was found to be 3.1 at 5 V. (C) 2011 Elsevier Ltd. All rights reserved.

High-Performance Metal-Insulator-Metal Capacitors Using Europium Oxide as Dielectric

We report the first demonstration of metal-insulator-metal (MIM) capacitors with Eu2O3 dielectric for analog and DRAM applications. The influence of different anneal conditions on the electrical characteristics of the fabricated MIM capacitors is studied. FG anneal results in high capacitance density (7 fF/mu m(2)), whereas oxygen anneal results in low quadratic voltage coefficient of capacitance (VCC) (194 ppm/V-2 at 100 kHz), and argon anneal results in low leakage current density (3.2 x 10(-8) A/cm(2) at -1 V). We correlate these electrical results with the surface chemical states of the films through X-ray photoelectron spectroscopy measurements. In particular, FG anneal and argon anneal result in sub-oxides, which modulate the electrical properties.

Dielectric properties of DC reactive magnetron sputtered Al2O3 thin films

Alumina (Al2O3) thin films were sputter deposited over well-cleaned glass and Si < 100 > substrates by DC reactive magnetron sputtering under various oxygen gas pressures and sputtering powers. The composition of the films was analyzed by X-ray photoelectron spectroscopy and an optimal O/Al atomic ratio of 1.59 was obtained at a reactive gas pressure of 0.03 Pa and sputtering power of 70 W. X-ray diffraction results revealed that the films were amorphous until 550 degrees C. The surface morphology of the films was studied using scanning electron microscopy and the as-deposited films were found to be smooth. The topography of the as-deposited and annealed films was analyzed by atomic force microscopy and a progressive increase in the rms roughness of the films from 3.2 nm to 4.53 nm was also observed with increase in the annealing temperature. Al-Al2O3-Al thin film capacitors were then fabricated on glass substrates to study the effect of temperature and frequency on the dielectric property of the films. Temperature coefficient of capacitance. AC conductivity and activation energy were determined and the results are discussed. (C) 2011 Elsevier B.V. All rights reserved.

Microelectromechanical torsional varactors with low parasitic capacitances and high dynamic range

This work focuses on the design of torsional microelectromechanical systems (MEMS) varactors to achieve highdynamic range of capacitances. MEMS varactors fabricated through the polyMUMPS process are characterized at low and high frequencies for their capacitance-voltage characteristics and electrical parasitics. The effect of parasitic capacitances on tuning ratio is studied and an equivalent circuit is developed. Two variants of torsional varactors that help to improve the dynamic range of torsional varactors despite the parasitics are proposed and characterized. A tuning ratio of 1:8, which is the highest reported in literature, has been obtained. We also demonstrate through simulations that much higher tuning ratios can be obtained with the designs proposed. The designs and experimental results presented are relevant to CMOS fabrication processes that use low resistivity substrate. (C) 2012 Society of Photo-Optical Instrumentation Engineers (SPIE). DOI: 10.1117/1.JMM.11.1.013006]

Compiler-assisted energy optimization for clustered VLIW processors

Clustered architecture processors are preferred for embedded systems because centralized register file architectures scale poorly in terms of clock rate, chip area, and power consumption. Although clustering helps by improving the clock speed, reducing the energy consumption of the logic, and making the design simpler, it introduces extra overheads by way of inter-cluster communication. This communication happens over long global wires having high load capacitance which leads to delay in execution and significantly high energy consumption. Inter-cluster communication also introduces many short idle cycles, thereby significantly increasing the overall leakage energy consumption in the functional units. The trend towards miniaturization of devices (and associated reduction in threshold voltage) makes energy consumption in interconnects and functional units even worse, and limits the usability of clustered architectures in smaller technologies. However, technological advancements now permit the design of interconnects and functional units with varying performance and power modes. In this paper, we propose scheduling algorithms that aggregate the scheduling slack of instructions and communication slack of data values to exploit the low-power modes of functional units and interconnects. Finally, we present a synergistic combination of these algorithms that simultaneously saves energy in functional units and interconnects to improves the usability of clustered architectures by achieving better overall energy-performance trade-offs. Even with conservative estimates of the contribution of the functional units and interconnects to the overall processor energy consumption, the proposed combined scheme obtains on average 8% and 10% improvement in overall energy-delay product with 3.5% and 2% performance degradation for a 2-clustered and a 4-clustered machine, respectively. We present a detailed experimental evaluation of the proposed schemes. Our test bed uses the Trimaran compiler infrastructure. (C) 2012 Elsevier Inc. All rights reserved.

Study of n-ZnO/p-Si (100) thin film heterojunctions by pulsed laser deposition without buffer layer

ZnO/Si heterojunctions were fabricated by growing ZnO thin films on p-type Si (100) substrate by pulsed laser deposition without buffer layers. The crystallinity of the heterojunction was analyzed by high resolution X-ray diffraction and atomic force microscopy. The optical quality of the film was analyzed by room temperature (RT) photoluminescence measurements. The high intense band to band emission confirmed the high quality of the ZnO thin films on Si. The electrical properties of the junction were studied by temperature dependent current-voltage measurements and RT capacitance-voltage (C-V) analysis. The charge carrier concentration and the barrier height (BH) were calculated, to be 5.6x10(19) cm(-3) and 0.6 eV respectively from the C-V plot. The BH and ideality factor, calculated using the thermionic emission (TE) model, were found to be highly temperature dependent. We observed a much lower value in Richardson constant, 5.19x10(-7)A/cm(2) K-2 than the theoretical value (32 A/cm(2) K-2) for ZnO. This analysis revealed the existence of a Gaussian distribution (GD) with a standard deviation of sigma(2)=0.035 V. By implementing the GD to the TE, the values of BH and Richardson constant were obtained as 1.3 eV and 39.97 A/cm(2) K-2 respectively from the modified Richardson plot. The obtained Richardson constant value is close to the theoretical value for n-ZnO. These high quality heterojunctions can be used for solar cell applications. (C) 2012 Elsevier B.V. All rights reserved.

Rapid sonochemical synthesis of mesoporous MnO2 for supercapacitor applications

Mesoporous MnO2 samples with average pore-size in the range of 2-20 nm are synthesized in sonochemical method from KMnO4 by using a tri-block copolymer, namely, poly(ethylene glycol)-block-poly(propylene glycol)-block-poly(ethylene glycol) (P123) as a soft template as well as a reducing agent. The MnO2 samples are found to be poorly crystalline. On increasing the amplitude of sonication, a change in the morphology of MnO2 from nanoparticles to nanorods and also change in porosity are observed. A high BET surface area of 245 m(2) g(-1) is achieved for MnO2 sample. The MnO2 samples are subjected to electrochemical capacitance studies by cyclic voltammetry (CV) and galvanostatic charge-discharge cycling in 0.1 M aqueous Ca(NO3)(2) electrolyte. A maximum specific capacitance (SC) of 265 Fg(-1) is obtained for the MnO2 sample synthesized in sonochemical method using an amplitude of 30 mu m. The MnO2 samples also possess good electrochemical stability due to their favourable porous structure and high surface area. (C) 2012 Elsevier B.V. All rights reserved.

Influence of Sn doping on structural, optical and electrical properties of ZnO thin films prepared by cost effective sol-gel process

Tin (Sn) doped zinc oxide (ZnO) thin films were synthesized by sol-gel spin coating method using zinc acetate di-hydrate and tin chloride di-hydrate as the precursor materials. The films were deposited on glass and silicon substrates and annealed at different temperatures in air ambient. The agglomeration of grains was observed by the addition of Sn in ZnO film with an average grain size of 60 nm. The optical properties of the films were studied using UV-VIS-NIR spectrophotometer. The optical band gap energies were estimated at different concentrations of Sn. The MOS capacitors were fabricated using Sn doped ZnO films. The capacitance-voltage (C-V), dissipation vs. voltage (D-V) and current-voltage (I-V) characteristics were studied and the electrical resistivity and dielectric constant were estimated. The porosity and surface area of the films were increased with the doping of Sn which makes these films suitable for opto-electronic applications. (C) 2012 Elsevier B.V. All rights reserved.

Mesoporous MnO2 synthesized by hydrothermal route for electrochemical supercapacitor studies

Poorly crystalline mesoporous MnO2, which is suitable for supercapacitor studies, is synthesized from neutral KMnO4 aqueous solution by hydrothermal route. But it requires a high temperature (180 A degrees C) and also a long reaction time (24 h). Addition of a tri-block copolymer, namely, poly(ethylene glycol)-block-poly(propylene glycol)-block-poly(ethylene glycol) (P123), which is generally used as a soft template for the synthesis of nano-structured porous materials, reduces the hydrothermal temperature to 140 A degrees C and also reaction time to 2 h. When the reaction time is increased, the product morphology changes from nanoparticles to nanorods with a concomitant decrease in BET surface area. Also, the product tends to attain crystallinity. The electrochemical capacitance properties of MnO2 synthesized under varied hydrothermal conditions are studied in 0.1 M Na2SO4 electrolyte. A specific capacitance of 193 F g(-1) is obtained for the mesoporous MnO2 sample consisting of nanoparticle and nanorod mixed morphology synthesized in 6 h using P123 at 140 A degrees C.

A Durable RuO2-Carbon-Supported Pt Catalyst for PEFCs: A Cause and Effect Study

As Polymer Electrolyte Fuel Cells (PEFCs) are nearing the acceptable performance level for automotive and stationary applications, the focus on the research is shifting more and more toward enhancing their durability that still remains a major concern in their commercial acceptability. Hydrous ruthenium oxide (RuO2) is a promising material for pseudocapacitors due to its high stability, high specific-capacitance and rapid faradaic-reaction. Incorporation of carbon-supported RuO2 (RuO2/C) to platinum (Pt) is found to ameliorate both stability and catalytic activity of fuel cell cathodes that exhibit higher performance and durability in relation to Pt/C cathodes as evidenced by cell polarization, impedance and cyclic voltammetry data. The degradation in performance of Pt-RuO2/C cathodes is found to be only similar to 8% after 10000 accelerated stress test (AST) cycles as against similar to 60% for Pt/C cathodes after 7000 AST cycles under similar conditions. These data are in conformity with the Electrochemical Surface Area and impedance results. Interestingly, Pt-RuO2/C cathodes can withstand more than 10000 AST cycles with only a nominal loss in their performance. Studies on catalytic electrodes with X-ray diffraction, transmission electron microscopy and cross-sectional field-emission scanning electron microscopy reflect that incorporation of RuO2 to Pt helps mitigating aggregation of Pt particles and improves its stability during long-term operation of PEFCs. (C) 2012 The Electrochemical Society. DOI: 10.1149/2.jes113440] All rights reserved.

Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor

We report on the threshold voltage modeling of ultra-thin (1 nm-5 nm) silicon body double-gate (DG) MOSFETs using self-consistent Poisson-Schrodinger solver (SCHRED). We define the threshold voltage (V th) of symmetric DG MOSFETs as the gate voltage at which the center potential (Φ c) saturates to Φ c (s a t), and analyze the effects of oxide thickness (t ox) and substrate doping (N A) variations on V th. The validity of this definition is demonstrated by comparing the results with the charge transition (from weak to strong inversion) based model using SCHRED simulations. In addition, it is also shown that the proposed V t h definition, electrically corresponds to a condition where the inversion layer capacitance (C i n v) is equal to the oxide capacitance (C o x) across a wide-range of substrate doping densities. A capacitance based analytical model based on the criteria C i n v C o x is proposed to compute Φ c (s a t), while accounting for band-gap widening. This is validated through comparisons with the Poisson-Schrodinger solution. Further, we show that at the threshold voltage condition, the electron distribution (n(x)) along the depth (x) of the silicon film makes a transition from a strong single peak at the center of the silicon film to the onset of a symmetric double-peak away from the center of the silicon film. © 2012 American Institute of Physics.

Substrate integrated Lead-Carbon hybrid ultracapacitor with flooded, absorbent glass mat and silica-gel electrolyte configurations

Lead-Carbon hybrid ultracapacitors (Pb-C HUCs) with flooded, absorbent-glass-mat (AGM) and silica-gel sulphuric acid electrolyte configurations are developed and performance tested. Pb-C HUCs comprise substrate-integrated PbO2 (SI-PbO2) as positive electrodes and high surface-area carbon with graphite-sheet substrate as negative electrodes. The electrode and silica-gel electrolyte materials are characterized by XRD, XPS, SEM, TEM, Rheometry, BET surface area, and FTIR spectroscopy in conjunction with electrochemistry. Electrochemical performance of SI-PbO2 and carbon electrodes is studied using cyclic voltammetry with constant-current charge and discharge techniques by assembling symmetric electrical-double-layer capacitors and hybrid Pb-C HUCs with a dynamic Pb(porous)/PbSO4 reference electrode. The specific capacitance values for 2 V Pb-C HUCs are found to be 166 F/g, 102 F/g and 152 F/g with a faradaic efficiency of 98%, 92% and 88% for flooded, AGM and gel configurations, respectively.

Optimal Hop Distance and Power Control for a Single Cell, Dense, Ad Hoc Wireless Network

We consider a dense, ad hoc wireless network, confined to a small region. The wireless network is operated as a single cell, i.e., only one successful transmission is supported at a time. Data packets are sent between source-destination pairs by multihop relaying. We assume that nodes self-organize into a multihop network such that all hops are of length d meters, where d is a design parameter. There is a contention-based multiaccess scheme, and it is assumed that every node always has data to send, either originated from it or a transit packet (saturation assumption). In this scenario, we seek to maximize a measure of the transport capacity of the network (measured in bit-meters per second) over power controls (in a fading environment) and over the hop distance d, subject to an average power constraint. We first motivate that for a dense collection of nodes confined to a small region, single cell operation is efficient for single user decoding transceivers. Then, operating the dense ad hoc wireless network (described above) as a single cell, we study the hop length and power control that maximizes the transport capacity for a given network power constraint. More specifically, for a fading channel and for a fixed transmission time strategy (akin to the IEEE 802.11 TXOP), we find that there exists an intrinsic aggregate bit rate (Theta(opt) bits per second, depending on the contention mechanism and the channel fading characteristics) carried by the network, when operating at the optimal hop length and power control. The optimal transport capacity is of the form d(opt)((P) over bar (t)) x Theta(opt) with d(opt) scaling as (P) over bar (t) (1/eta), where (P) over bar (t) is the available time average transmit power and eta is the path loss exponent. Under certain conditions on the fading distribution, we then provide a simple characterization of the optimal operating point. Simulation results are provided comparing the performance of the optimal strategy derived here with some simple strategies for operating the network.