Isotropic constitutive models for metallic foams

The yield behaviour of two aluminum alloy foams (Alporas and Duocel) has been investigated for a range of axisymmetric compressive stress states. The initial yield surface has been measured, and the evolution of the yield surface has been explored for uniaxial and hydrostatic stress paths. It is found that the hydrostatic yield strength is of similar magnitude to the uniaxial yield strength. The yield surfaces are of quadratic shape in the stress space of mean stress versus effective stress, and evolve without corner formation. Two phenomenological isotropic constitutive models for the plastic behaviour are proposed. The first is based on a geometrically self-similar yield surface while the second is more complex and allows for a change in shape of the yield surface due to differential hardening along the hydrostatic and deviatoric axes. Good agreement is observed between the experimentally measured stress versus strain responses and the predictions of the models.

Electric conduction improvement of well-structured multi-walled carbon nanotubes

We characterized the electrical conductance of well-structured multi-walled carbon nanotubes (MWCNTs) which had post-treated by a rapid vacuum arc thermal annealing process and structure defects in these nanotubes are removed. We found that the after rapid vacuum arc annealing, the conductivity of well-structured MWCNTs can be improved by an order of magnitude. We also investigated the conductivity of MWCNTs bundle by the variation of temperatures. These results show that the conductance of annealed defect-free MWCNTs is sensitive to temperature imply the phonon scatting dominated the electron conductions. Compare to the well-structured MWCNTs, the defect scattering dominated the electron conduction in the as-grown control sample which has large amount of structure defects. A detail measurement of electron conduction from an individual well-structured MWCNT shows that the conductivity increases with temperatures which imply such MWCNTs exhibited semiconductor properties. We also produced back-gated field-effect transistors using these MWCNTs. It shows that the well-structured MWCNT can act as p-type semiconductor. © 2010 IEEE.