Mnltiloop Controller and Reference Generator for a Dynamic Voltage Restorer Implementation

This paper deals with the design and analysis of a Dynamic Voltage Restorer output voltage control. Such control is based on a multiloop strategy, with an inner current PID regulator and an outer P+Resonant voltage controller. The inner regulator is applied on the output inductor current. It will be also demonstrated how the load current behavior may influence in the DVR output voltage, which. justifies the need for the resonant controller. Additionally, it will be discussed the application of a modified algorithm for the identification of the DVR voltage references, which is based on a previously presented positive sequence detector. Since the studied three-phase DVR is assumed to be based on three identical H-bridge converters, all the analysis and design procedures were realized by means of single-phase equivalent circuits. The discussions and conclusions are supported by theoretical calculations, nonlinear simulations and some experimental results.

A linearly tunable low-voltage CMOS transconductor with improved common-mode stability and its application to (gm)-C filters

A linearly tunable low-voltage CMOS transconductor featuring a new adaptative-bias mechanism that considerably improves the stability of the processed-signal common,mode voltage over the tuning range, critical for very-low voltage applications, is introduced. It embeds a feedback loop that holds input devices on triode region while boosting the output resistance. Analysis of the integrator frequency response gives an insight into the location of secondary poles and zeros as function of design parameters. A third-order low-pass Cauer filter employing the proposed transconductor was designed and integrated on a 0.8-mum n-well CMOS standard process. For a 1.8-V supply, filter characterization revealed f(p) = 0.93 MHz, f(s) = 1.82 MHz, A(min) = 44.08, dB, and A(max) = 0.64 dB at nominal tuning. Mined by a de voltage V-TUNE, the filter bandwidth was linearly adjusted at a rate of 11.48 kHz/mV over nearly one frequency decade. A maximum 13-mV deviation on the common-mode voltage at the filter output was measured over the interval 25 mV less than or equal to V-TUNE less than or equal to 200 mV. For V-out = 300 mV(pp) and V-TUNE = 100 mV, THD was -55.4 dB. Noise spectral density was 0.84 muV/Hz(1/2) @1 kHz and S/N = 41 dB @ V-out = 300 mV(pp) and 1-MHz bandwidth. Idle power consumption was 1.73 mW @V-TUNE = 100 mV. A tradeoff between dynamic range, bandwidth, power consumption, and chip area has then been achieved.

New approach to four-phase transmission systems: analysis of the transient response and the possible voltage surges

This study describes a technical analysis of a four-phase line as a transmission system alternative. An analysis in the frequency and the time domains is performed to evaluate the electrical characteristics and the transient response of a generic four-phase system compared with those of a conventional three-phase transmission system. The technical features of this non-conventional system are discussed and reviewed based on the current literature. Thus, a new analysis of the four-phase system is presented that emphasises several technical characteristics that have not been discussed in previous studies.

Influence of ankle functional instability on the ankle electromyography during landing after volleyball blocking

The purpose of this study was to describe, interpret and compare the EMG activation patterns of ankle muscles - tibialis anterior (TA), peroneus longus (PL) and gastrocnemius lateralis (GL) - in volleyball players with and without ankle functional instability (FI) during landing after the blocking movement. Twenty-one players with FI (IG) and 19 controls (CG) were studied. The cycle of movement analyzed was the time period between 200 ms before and 200 ms after the time of impact determined by ground reaction forces. The variables were analyzed for two different phases: pre-landing (200 ms before impact) and post-landing (200 ms after impact). The RMS values and the timing of onset activity were calculated for the three studied muscles, in both periods and for both groups. The co-activation index for TA and PL, TA and GL were also calculated. Individuals with FI presented a lower RMS value pre-landing for PL (CG = 43.0 perpendicular to 22.0; IG = 26.2 perpendicular to 8.4, p < 0.05) and higher RMS value post-landing (CG = 47.5 perpendicular to 13.3; IG = 55.8 perpendicular to 21.6, p < 0.10). Besides that, in control group PL and GL activated first and simultaneously, and TA presented a later activation, while in subjects with FI all the three muscles activated simultaneously. There were no significant differences between groups for co-activation index. Thus, the rate of contraction between agonist and antagonist muscles is similar for subjects with and without FI but the activation individually was different. Volleyball players with functional instability of the ankle showed altered patterns of the muscles that play an important role in the stabilization of the foot-ankle complex during the performance of the blocking movement, to the detriment of the ligament complex, and this fact could explain the usual complaints in these subjects. (C) 2007 Elsevier Ltd. All rights reserved.

The effect of TiO(2) on the microstructural and electrical properties of low voltage varistor based on (Sn,Ti)O(2) ceramics

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

SnO2, ZnO and related polycrystalline compound semiconductors: An overview and review on the voltage-dependent resistance (non-ohmic) feature

The present review describes mainly the history of SnO2-based voltage-dependent resistors, discusses the main characteristics of these polycrystalline semiconductor systems and includes a direct comparison with traditional ZnO-based voltage-dependent resistor systems to establish the differences and similarities, giving details of the basic physical principles involved with the non-ohmic properties in both polycrystalline systems. As an overview, the text also undertakes the main difficulties involved in processing SnO2- and ZnO-based non-ohmic systems, with an evaluation of the contribution of the dopants to the electronic properties and to the final microstructure and consequently to the system's non-ohmic behavior. However, since there are at least two review texts regarding ZnO-based systems [Levinson, L. M., and Philipp, H. R. Ceramic Bulletin 1985;64:639; Clarke, D. R. Journal of American Ceramic Society 1999;82:485], the main focus of the present text is dedicated to the SnO2-based varistor systems, although the basic physical principles described in the text are universally useful in the context of dense polycrystalline devices. However, the readers must be careful of how the microstructure heterogeneity and grain-boundary chemistry are capable to interfere in the global electrical response for particular systems. New perspectives for applications, commercialization and degradation studies involving SnO2-based polycrystalline non-ohmic systems are also outlined, including recent technological developments. Finally, at the end of this review a brief section is particularly dedicated to the presentation and discussions about others emerging non-ohmic polycrystalline ceramic devices (particularly based on perovskite ceramics) which must be deeply studied in the years to come, specially because some of these systems present combined high dielectric and non-ohmic properties. From both scientific and technological point of view these perovskite systems are quite interesting. (c) 2007 Elsevier Ltd. All rights reserved.

Stepped light-induced transient measurements of photocurrent and voltage in dye-sensitized solar cells based on ZnO and ZnO:Ga

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Hydrothermal surface-wave instability and the Kuramoto-Sivashinsky equation

We consider a system formed by an infinite viscous liquid layer with a constant horizontal temperature gradient and a basic nonlinear bulk velocity profile. In the limit of long wavelength and large nondimensional surface tension we show that hydrothermal surface-wave instabilities may give rise to disturbances governed by the Kuramoto-Sivashinsky equation. A possible connection to hot-wire experiments is also discussed. © 1994.

Modulational instability analysis of surface-waves in the Bénard-Marangoni phenomenon

By using the long-wave approximation, a system of coupled evolutions equations for the bulk velocity and the surface perturbations of a Bénard-Marangoni system is obtained. It includes nonlinearity, dispersion and dissipation, and it is interpreted as a dissipative generalization of the usual Boussinesq system of equations. Then, by considering that the Marangoni number is near the critical value M = -12, we show that the modulation of the Boussinesq waves is described by a perturbed Nonlinear Schrödinger Equation, and we study the conditions under which a Benjamin-Feir instability could eventually set in. The results give sufficient conditions for stability, but are inconclusive about the existence or not of a Benjamin-Feir instability in the long-wave limit. © 1995.

Modelling of the influence of the layer pollution thickness in high voltage polluted insulators

An experimental model and a mathematical model with the introduction of a ramp in the channel of Obenaus model are presented. The aim is to present a better reproduction of the real layer pollution deposited on the HV insulators. This better reproduction is obtained from two types of thickness variation: the introduction of a ramp (soft variation) and the introduction of a step (sudden variation). The computational simulations and the experimental data suggest that the introduction of the ramp is the better reproduction of the layer pollution. The ramp approximates to the real layer pollution more than the step.

Thermally activated dynamics of the tilts of the CuO6 octahedra, hopping of interstitial O, and possible instability towards the LTT phase in La2CuO4+δ

The anelastic spectrum (dynamic Young's modulus and elastic energy absorption) of La2CuO4+δ has been measured between 1 and 700 K with 0<δ<0.02. The spectrum of stoichiometric La2CuO4 in the low-temperature orthorhombic (LTO) phase is dominated by two intense relaxation processes which cause softenings of 16% around 150 K and 9% below 30 K at f∼1 kHz. The relaxation at 150 K is attributed to the presence of a fraction of the CuO6 octahedra which are able to change their tilted configuration by thermal activation between orientations which are nearly energetically equivalent, possibly within the twin boundaries. The relaxation below 30 K is governed by tunneling, and involves a considerable fraction of the lattice atoms. It is proposed that the double-well potentials for the low-temperature relaxation are created by the tendency of the LTO phase to form low-temperature tetragonal (LTT) domains, which however are not stabilized like when La is partially substituted with Ba. On doping with excess O, the relaxation rates of these processes are initially enhanced by hole doping, while their intensities are depressed by lattice disorder; an explanation of this behavior is provided. Excess O also causes two additional relaxation processes. The one appearing at lower values of δ is attributed to the hopping of single interstitial O2- ions, with a hopping rate equal to τ-1=2×10-14exp(-5600/T) s. The second process is slower and can be due to O pairs or other complexes containing excess O.

New 12kW three-phase 18-pulse high power factor AC-DC converter with regulated output voltage for rectifier units

This work presents a new high power factor three-phase rectifier based on a Y-connected differential autotransformer with reduced kVA and 18-pulse input current followed by three DC-DC boost converters. The topology provides a regulated output voltage and natural three-phase input power factor correction. The lowest input current harmonic components are the 17th and the 19th. Three boost converters, with constant input currents and regulated parallel connected output voltages are used to process 4kW each one. Analytical results from Fourier analyses of winding currents and the vector diagram of winding voltages are presented. Simulation results to verify the proposed concept and experimental results are shown in the paper.

On designing linearly-tunable ultra-low voltage CMOS gm-C filters

A linearly-tunable ULV transconductor featuring excellent stability of the processed signal common-mode voltage upon tuning, critical for very-low voltage applications, is presented. Its employment to the synthesis of CMOS gm-C high-frequency and voiceband filters is discussed. SPICE data describe the filter characteristics. For a 1.3 V-supply, their nominal passband frequencies are 1.0 MHz and 3.78 KHz, respectively, with tuning rates of 12.52 KHz/mV and 0.16 KHz/m V, input-referred noise spectral density of 1.3 μV/Hz1/2 and 5.0μV/Hz1/2 and standby consumption of 0.87 mW and 11.8 μW. Large-signal distortion given by THD = 1% corresponds to a differential output-swing of 360 mVpp and 480 mVpp, respectively. Common-mode voltage deviation is less than 4 mV over tuning interval.

An accurate low-voltage analog memory-cell with built-in multiplication

A CMOS memory-cell for dynamic storage of analog data and suitable for LVLP applications is proposed. Information is memorized as the gate-voltage of input-transistor of a gain-boosting triode-transconductor. The enhanced output-resistance improves accuracy on reading out the sampled currents. Additionally, a four-quadrant multiplication between the input to regulation-amplifier of the transconductor and the stored voltage is provided. Designing complies with a low-voltage 1.2μm N-well CMOS fabrication process. For a 1.3V-supply, CCELL=3.6pF and sampling interval is 0.25μA≤ ISAMPLE ≤ 0.75μA. The specified retention time is 1.28ms and corresponds to a charge-variation of 1% due to junction leakage @75°C. A range of MR simulations confirm circuit performance. Absolute read-out error is below O.40% while the four-quadrant multiplier nonlinearity, at full-scale is 8.2%. Maximum stand-by consumption is 3.6μW/cell.