Tuning the Sensitivity of a Metal-Based Piezoresistive Sensor Using Electromigration

We report a simple method to enhance the piezoresistive sensitivity of a gold film by more than 30 times and demonstrate it using a microcantilever resonator. Our method depends on controlled electromigration that we use to tune the resistance and sensitivity of the piezoresistive sensor. We attribute the enhancement in strain sensitivity to the creation of an inhomogeneous conduction medium at a predefined location by directed and controlled electromigration. We understand this phenomenon with tunneling-percolation model, which was originally hypothesized to explain nonuniversal percolation behavior of composite materials. 2012-0174]

Mechanical and electrical contact resistance characteristics of a cellular assembly of carbon nanotubes

We employ nanoindentation coupled with electrical contact resistance measurements for simultaneous characterization of the electrical and mechanical behaviors of a cellular assembly of carbon nanotubes (CNTs). Experimental results reveal two different responses that correspond to relatively dense and porous regions of the cellular structure. Distinct nonlinear electron transport characteristics are observed, which mainly originate from diffusive conductance in the CNT structure. In the denser region, differential conductance shows asymmetric minima at lower bias, implying that conductivity mainly results from bulk tunneling. However, the porous regions show insignificant differential conduction as opposed to the denser region.

Electron field emission from reduced graphene oxide on polymer film

Field emission of reduced graphene oxide coated on polystyrene film is studied in both parallel and perpendicular configurations. Low turn-on field of 0.6 V/lm and high emission current density of 200 mA/cm(2) are observed in perpendicular configuration (along the cross section), whereas a turn-on field of 6 V/lm and current density of 20 mu A/cm(2) are obtained in parallel configuration (top surface). The emission characteristics follow Fowler-Nordheim (FN) tunneling and the values of enhancement factor estimated from FN plots are 5818 (perpendicular) and 741 (parallel). Furthermore, stability and repeatability of the field emission characteristics in perpendicular configuration are presented. (C) 2013 American Institute of Physics. http://dx.doi.org/10.1063/1.4788738]

Role of carrier density and disorder on anisotropic charge transport in polypyrrole

Polypyrrole (PPy) has been synthesized electrochemically on platinum substrate by varying synthesis temperature and dopant concentration. The charge transport in PPy has been investigated as a function of temperature for both in-plane and out-of-plane geometry in a wide temperature range of 5K-300 K. The charge transport showed strong anisotropy and various mechanisms were used to explain the transport. The conductivity ratio, sigma(r) = sigma(300 K)/sigma(5 K) is calculated for each sample to quantify the relative disorder. At all the temperatures, the conductivity values for in-plane transport are found to be more for PPy synthesized at lower temperature, while the behavior is found to be different for out-of-plane transport. The carrier density is found to play a crucial role in case of in-plane transport. An effort has been made to correlate charge transport to morphology by analyzing temperature and frequency dependence of conductivity. Charge transport in lateral direction is found to be dominated by hopping whereas tunneling mechanisms are dominated in vertical direction. Parameters such as density of states at the Fermi level N(E-F)], average hopping distance (R), and average hopping energy (W) have been estimated for each samples in both geometry. (C) 2013 American Institute of Physics. http://dx.doi.org/10.1063/1.4775405]

Effect of Temperature Cycling on Conduction Mechanisms in CdTe Thin Films

CdTe thin films of 500 thickness prepared by thermal evaporation technique were analyzed for leakage current and conduction mechanisms. Metal-insulator-metal (MIM) capacitors were fabricated using these films as a dielectric. These films have many possible applications, such as passivation for infrared diodes that operate at low temperatures (80 K). Direct-current (DC) current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed on these films. Furthermore, the films were subjected to thermal cycling from 300 K to 80 K and back to 300 K. Typical minimum leakage currents near zero bias at room temperature varied between 0.9 nA and 0.1 mu A, while low-temperature leakage currents were in the range of 9.5 pA to 0.5 nA, corresponding to resistivity values on the order of 10(8) a''broken vertical bar-cm and 10(10) a''broken vertical bar-cm, respectively. Well-known conduction mechanisms from the literature were utilized for fitting of measured I-V data. Our analysis indicates that the conduction mechanism in general is Ohmic for low fields < 5 x 10(4) V cm(-1), while the conduction mechanism for fields > 6 x 10(4) V cm(-1) is modified Poole-Frenkel (MPF) and Fowler-Nordheim (FN) tunneling at room temperature. At 80 K, Schottky-type conduction dominates. A significant observation is that the film did not show any appreciable degradation in leakage current characteristics due to the thermal cycling.

A study on pulsed laser deposited metallic spin valves

In the recent past conventional Spin Valve (SV) structures are gaining growing interest over Tunneling Magneto-resistance (TMR) because of its preference due to low RA product in hard disc read head sensor applications. Pulsed Laser Deposited (PLD) SV and Pseudo Spin Valve (PSV) samples are grown at room temperature with moderately high MR values using simple FM/NM/FM/AFM structure. Although PLD is not a popular technique to grow metallic SVs because of expected large intermixing of the interfaces, particulate formation, still by suitably adjusting the deposition parameters we could get exchange bias (EB) as well as 2-3% MR of these SVs in the Current In Plane (CIP) geometry. Exchange Bias, which sets in even without applying magnetic field during deposition observed by using SQUID magnetometry as well as by MR measurements. Angular variation of the MR reveals four-fold anisotropy of the hard layer (Co) which becomes two-fold in presence of an adjacent AFM layer.

Anomalous optical phonons in Cs-0.9(NH4)(0.1)H2AsO4: a temperature-dependent Raman study

We determine the nature of coupled phonons in mixed crystal of Cs-0.9(NH4)(0.1)H2AsO4 using inelastic light scattering studies in the temperature range of 5 K to 300 K covering a spectral range of 60-1100 cm(-1). The phase transition in this system are marked by the splitting of phonon modes, appearance of new modes and anomalies in the frequency as well as linewidth of the phonon modes near transition temperature. In particular, we observed the splitting of symmetric (v(1)) and antisymmetric (v(3)) stretching vibrations associated with AsO4 tetrahedra below transition temperature (T-c(*) similar to 110 K) attributed to the lowering of site symmetry of AsO4 in orthorhombic phase below transition temperature. In addition, the step-up (hardening) and step-down (softening) of the AsO4 bending vibrations (v(4) (S9, S11) and v(2) (S6)) below transition temperature signals the rapid development of long range ferroelectric order and proton ordering. The lowest frequency phonon (S1) mode observed at similar to 92 cm(-1) shows anomalous blue shift (similar to 12 %) from 300 K to 5 K with no sharp transition near T-c(*) unlike other observed phonon modes signaling its potential coupling with the proton tunneling mode. (C) 2013 Author(s).

Microwave, infrared-microwave double resonance, and theoretical studies of C2H4 center dot center dot center dot H2S complex

In this manuscript, rotational spectra of four new isotopologues of the S-H center dot center dot center dot pi bonded C2H4 center dot center dot center dot H2S complex, i.e., C2D4 center dot center dot center dot H2S, C2D4 center dot center dot center dot D2S, C2D4 center dot center dot center dot HDS, and (CCH4)-C-13 center dot center dot center dot H2S have been reported and analyzed. All isotopologues except C2D4 center dot center dot center dot HDS show a four line pattern whereas a doubling of the transition frequencies was observed for C2D4 center dot center dot center dot HDS. These results together with our previous report on the title complex M. Goswami, P. K. Mandal, D. J. Ramdass, and E. Arunan, Chem. Phys. Lett. 393(1-3), 22-27 (2004)] confirm that both subunits (C2H4 and H2S) are involved in large amplitude motions leading to a splitting of each rotational transition to a quartet. Further, the results also confirm that the motions which are responsible for the observed splittings involve both monomers. Molecular symmetry group analysis, considering the interchange of equivalent H atoms in H2S and C2H4 could explain the observed four line pattern and their intensities in the microwave spectrum. In addition, hydride stretching fundamentals of the complex were measured using coherence-converted population transfer Fourier Transform Microwave-infrared (IR-MW double resonance) experiments in the S-H and C-H stretch regions. Changes in the tunneling splittings upon vibrational excitation are consistent with the isotopic dependence of pure rotational transitions. A complexation shift of 2.7-6.5 cm(-1) has been observed in the two fundamental S-H stretching modes of the H2S monomer in the complex. Vibrational pre-dissociation in the bound S-H stretch has been detected whereas the instrument-limited line-shapes in other S-H and C-H stretches indicate slower pre-dissociation rate. Some local perturbations in the vibrational spectra have been observed. Two combination bands have been observed corresponding to both the S-H stretching fundamentals and what appears to be the intermolecular stretching mode at 55 cm(-1). The tunneling splitting involved in the rotation of C2H4 unit has been deduced to be 1.5 GHz from the IR-MW results. In addition, ab initio barrier heights derived for different motions of the monomers support the experimental results and provide further insight into the motions causing the splitting. (C) 2013 AIP Publishing LLC.

Proposal for Graphene-Boron Nitride Heterobilayer-Based Tunnel FET

We investigate the gate-controlled direct band-to-band tunneling (BTBT) current in a graphene-boron nitride (G-BN) heterobilayer channel-based tunnel field effect transistor. We first study the imaginary band structure of hexagonal and Bernal-stacked heterobilayers by density functional theory, which is then used to evaluate the gate-controlled current under the Wentzel-Kramers-Brillouin approximation. It is shown that the direct BTBT is probable for a certain interlayer spacing of the G-BN which depends on the stacking orders.

Tuning of the electro-mechanical behavior of the cellular carbon nanotube structures with nanoparticle dispersions

The mechanical and electrical characteristics of cellular network of the carbon nanotubes (CNT) impregnated with metallic and nonmetallic nanoparticles were examined simultaneously by employing the nanoindentation technique. Experimental results show that the nanoparticle dispersion not only enhances the mechanical strength of the cellular CNT by two orders of magnitude but also imparts variable nonlinear electrical characteristics; the latter depends on the contact resistance between nanoparticles and CNT, which is shown to depend on the applied load while indentation. Impregnation with silver nanoparticles enhances the electrical conductance, the dispersion with copper oxide and zinc oxide nanoparticles reduces the conductance of CNT network. In all cases, a power law behavior with suppression in the differential conductivity at zero bias was noted, indicating electron tunneling through the channels formed at the CNT-nanoparticle interfaces. These results open avenues for designing cellular CNT foams with desired electro-mechanical properties and coupling. (C) 2014 AIP Publishing LLC.

Fabrication of Poly(Vinylidene Chloride-Co-Vinyl Chloride)/TiO2 Nanocomposite Films and Their Dielectric Properties

Flexible poly(vinylidene chloride-co-vinyl chloride)/TiO2 nanocomposite films were fabricated and their dielectric properties were studied. The structural characterization of the composites was carried out using various spectroscopic and electron microscopic techniques. From the thermal analysis of the composites, an improvement in the thermal properties was observed for the composites, as compared to the neat polymer. An increase in the DC conductivity was also observed in the composites, which was due to the tunneling of charge carriers. Furthermore, it was observed that the optimal loading of titania in the matrix was required, above which the properties of the composites showed deterioration. The study of the dielectric properties of the composites supports their use in microelectronic devices as separator in charge storage devices and in transistors.

Fermi-Edge Transmission Resonance in Graphene Driven by a Single Coulomb Impurity

The interaction between the Fermi sea of conduction electrons and a nonadiabatic attractive impurity potential can lead to a power-law divergence in the tunneling probability of charge through the impurity. The resulting effect, known as the Fermi edge singularity (FES), constitutes one of the most fundamental many-body phenomena in quantum solid state physics. Here we report the first observation of FES for Dirac fermions in graphene driven by isolated Coulomb impurities in the conduction channel. In high-mobility graphene devices on hexagonal boron nitride substrates, the FES manifests in abrupt changes in conductance with a large magnitude approximate to e(2)/h at resonance, indicating total many-body screening of a local Coulomb impurity with fluctuating charge occupancy. Furthermore, we exploit the extreme sensitivity of graphene to individual Coulomb impurities and demonstrate a new defect-spectroscopy tool to investigate strongly correlated phases in graphene in the quantum Hall regime.

Interface-assisted molecular spintronics

Molecular spintronics, a field that utilizes the spin state of organic molecules to develop magneto-electronic devices, has shown an enormous scientific activity for more than a decade. But, in the last couple of years, new insights in understanding the fundamental phenomena of molecular interaction on magnetic surfaces, forming a hybrid interface, are presenting a new pathway for developing the subfield of interface-assisted molecular spintronics. The recent exploration of such hybrid interfaces involving carbon based aromatic molecules shows a significant excitement and promise over the previously studied single molecular magnets. In the above new scenario, hybridization of the molecular orbitals with the spin-polarized bands of the surface creates new interface states with unique electronic and magnetic character. This study opens up a molecular-genome initiative in designing new handles to functionalize the spin dependent electronic properties of the hybrid interface to construct spin-functional tailor-made devices. Through this article, we review this subject by presenting a fundamental understanding of the interface spin-chemistry and spin-physics by taking support of advanced computational and spectroscopy tools to investigate molecular spin responses with demonstration of new interface phenomena. Spin-polarized scanning tunneling spectroscopy is favorably considered to be an important tool to investigate these hybrid interfaces with intra-molecular spatial resolution. Finally, by addressing some of the recent findings, we propose novel device schemes towards building interface tailored molecular spintronic devices for applications in sensor, memory, and quantum computing.

STM verification of the reduction of the Young's modulus of CdS nanoparticles at smaller sizes

We demonstrate the first STM evaluation of the Young's modulus (E) of nanoparticles (NPs) of different sizes. The sample deformation induced by tip-sample interaction has been determined using current-distance (I-Z) spectroscopy. As a result of tip-sample interaction, and the induced surface deformations, the I-z curves deviates from pure exponential dependence. Normally, in order to analyze the deformation quantitatively, the tip radius must be known. We show, that this necessity is eliminated by measuring the deformation on a substrate with a known Young's modulus (Au(111)) and estimating the tip radius, and afterwards, using the same tip (with a known radius) to measure the (unknown) Young's modulus of another sample (nanoparticles of CdS). The Young's modulus values found for 3 NP's samples of average diameters of 3.7, 6 and 7.5 nm, were E similar to 73%, 78% and 88% of the bulk value, respectively. These results are in a good agreement with the theoretically predicted reduction of the Young's modulus due to the changes in hydrostatic stresses which resulted from surface tension in nanoparticles with different sizes. Our calculation using third order elastic constants gives a reduction of E which scales linearly with 1/r (r is the NP's radius). This demonstrates the applicability of scanning tunneling spectroscopy for local mechanical characterization of nanoobjects. The method does not include a direct measurement of the tip-sample force but is rather based on the study of the relative elastic response. (C) 2014 Elsevier B.V. All rights reserved.

Temperature dependent current-voltage characteristics of zinc oxide nanowire/polypyrrole nanocomposite

Temperature dependent current-voltage (I-V) measurements of electrochemically prepared zinc oxide nanowire/polypyrrole (ZnONW/PPy) nanocomposite yielded non-linear I-V characteristics at temperatures between 300 and 4.5 K. The low-field conductance (G) of the ZnONW/PPy film exhibits pronounced temperature dependence with room temperature conductance (G(300K)) similar to 10(-3) S and a conductance ratio (G(300)K/G(4.5K)) of similar to 10(4), indicating dominance of significant temperature dependent charge transport processes. The conduction mechanism of the film is satisfactorily understood by extended fluctuation induced tunneling (FIT) model as the non-linear I-V characteristics fit fairly well to the extended FIT model. Further, the temperature dependence of G(o) obtained from fitting followed Sheng's model also. (C) 2014 AIP Publishing LLC.