Electrically Driven InAs Quantum-Dot Single-Photon Sources

Electrically driven single photon source based on single InAs quantum dot (QDs) is demonstrated. The device contains InAs QDs within a planar cavity formed between a bottom AlGaAs/GaAs distributed Bragg reflector (DBR) and a surface GaAs-air interface. The device is characterized by I-V curve and electroluminescence, and a single sharp exciton emission line at 966nm is observed. Hanbury Brown and Twiss (HBT) correlation measurements demonstrate single photon emission with suppression of multiphoton emission to below 45% at 80K

Hexagonal selenium nanowires synthesized via vapor-phase growth

Hexagonal Se nanowires were synthesized using a simple vapor-phase growth with the assistance of the silicon powder as a source material, which turned out to be very important in the growth of the Se nanowires. The morphology, microstructure, and chemical compositions of the nanowires were characterized using various means (XRD, SEM, TEM, XPS, and Raman spectroscopy). The possible growth mechanism of the Se nanowires was explained. The as-grown Se nanowires may find wide applications in biology and optoelectronics.

Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy

N-p-n Si/SiGe/Si heterostructure has been grown by a disilane (Si2H6) gas and Ge solid sources molecular beam epitaxy system using phosphine (PH3) and diborane (B2H6) as n- and p-type in situ doping sources, respectively. X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS) measurements show that the grown heterostructure has a good quality, the boron doping is confined to the SiGe base layer, and the Ge has a trapezoidal profile. Postgrowth P implantation was performed to prepare a good ohmic contact to the emitter. Heterojunction bipolar transistor (HBT) has been fabricated using the grown heterostructure and a common-emitter current gain of 75 and a cut-off frequency of 20 GHz at 300 K have been obtained. (C) 2001 Elsevier Science B.V. All rights reserved.

Experimental results of helicon sources

Helicon plasma source is known as an efficient generator of uniform and high density plasma. A helicon plasma source was developed for the investigation of plasma striping and plasma lens at the Institute of Modern Physics, CAS. In this paper, the characteristics of helicon plasma have been studied by using Langmuir four-probe and a high plasma density up to 3.9×1013 /cm3 has been achieved with the Nagoya type III antenna. In the experiment, several important phenomena have been found: (1) for a given magnetic induction intensity, the plasma density became greater with the increase of RF power; (2) the helicon mode appeared at the RF power between 300 W and 400 W; (3) the plasma density gradually tended to saturation as the RF power increased to the higher power; (4) a higher plasma density can be obtained by a good matching between the RF power and the magnetic field distribution. The key issue is how to optimize the matching between the RF power and the magnetic field. Moreover, some tests on the extraction of ion beam were performed, and the preliminary results were given. The problems which existed in the helicon ion source will be discussed and the increase in beam density will be expected by extraction system optimum.