An exploratory non-LTE model atmosphere analysis of B-type supergiants in the Small Magellanic Cloud

A preliminary differential non-LTE model atmosphere analysis of moderate resolution (R ~ 5 000) and signal-to-noise ratio spectra of 48 Small Magellanic Cloud B-type supergiants is presented. Standard techniques are adopted, viz. plane-parallel geometry and radiative and hydrostatic equilibrium. Spectroscopic atmospheric parameters (T_eff, log g and v_turb), luminosities and chemical abundances (He, C, N, O, Mg and Si) are estimated. These are compared with those deduced for a comparable sample of Galactic supergiants. The SMC targets appear to have similar atmospheric parameters, luminosities and helium abundances to the Galactic sample. Their magnesium and silicon underabundances are compatible with those found for main sequence SMC objects and there is no evidence for any large variation in their oxygen abundances. By contrast both their carbon and nitrogen lines strengths are inconsistent with single abundances, while their nitrogen to carbon abundance ratios appear to vary by at least as much and probably more than that found in the Galactic sample.

Blue luminous stars in nearby galaxies: Quantitative spectral analysis of M33 B-type supergiant stars

We present the detailed spectral analysis of a sample of M33 B-type supergiant stars, aimed at the determination of their fundamental parameters and chemical composition. The analysis is based on a grid of non-LTE metal line-blanketed model atmospheres including the effects of stellar winds and spherical extension computed with the code FASTWIND. Surface abundance ratios of C, N, and O are used to discuss the chemical evolutionary status of each individual star. The comparison of observed stellar properties with theoretical predictions of massive star evolutionary models shows good agreement within the uncertainties of the analysis. The spatial distribution of the sample allows us to investigate the existence of radial abundance gradients in the disk of M33. The comparison of stellar and H II region O abundances ( based on direct determinations of the electron temperature of the nebulae) shows good agreement. Using a simple linear radial representation, the stellar oxygen abundances result in a gradient of -0.0145 +/- 0.005 dex arcmin(-1) (or -0.06 +/- 0.02 dex kpc(-1)) up to a distance equal to similar to 1.1 times the isophotal radius of the galaxy. A more complex representation cannot be completely discarded by our stellar sample. The stellar Mg and Si abundances follow the trend displayed by O abundances, although with shallower gradients. These differences in gradient slope cannot be explained at this point. The derived abundances of the three alpha-elements yield solar metallicity in the central regions of the disk of M33. A comparison with recent planetary nebula data from Magrini and coworkers indicates that the disk of M33 has not suffered from a significant O enrichment in the last 3 Gyr.

Novos métodos de síntese de 4-quinolonas e benzo[b]acridonas

As 4-quinolonas e as acridonas são duas importantes famílias de compostos heterocíclicos azotados naturais que apresentam uma variedade de importantes aplicações biológicas. As 4-quinolonas têm sido objecto de extensos estudos devido às suas potenciais aplicações como fortes agentes citotóxicos, antimitóticos e anti-plaquetários e como protectores cardiovasculares, mas o seu uso é principalmente como antibióticos de largo espectro. As acridonas são conhecidas por apresentarem importante actividade antiviral, antiparasitária, contra a leishmania e a malária, e anticancerígena. A variedade de importantes aplicações biológicas das 4-quinolonas e das acridonas e a contínua procura pela comunidade científica de novas substâncias com actividades biológicas atractivas destaca estes compostos como alvos interessantes para a preparação de novos derivados e/ou para o desenvolvimento de novos métodos de síntese destas duas famílias de compostos. No primeiro capítulo desta dissertação descreve-se a síntese dos compostos de partida que tiveram de ser previamente preparados para o desenvolvimento das novas rotas de síntese apresentadas nos capítulos seguintes. A 4-cloro-3- formilquinolina foi obtida através da reacção de Vilsmeier-Haack da 2’-aminoacetofenona enquanto que a 3-formilquinolin-4(1H)-ona foi facilmente preparada por hidrólise ácida da anterior. Foi necessário proteger o grupo amina da quinolin-4(1H)-ona para evitar reacções secundárias e foram descritas as reacções de protecção com o grupo metilo, etoxicarbonilo e ptoluenossulfonilo. Os 2,2-dióxidos de 1,3-di-hidrobenzo[c]tiofeno, necessários para o estudo das reacções de Diels-Alder, não se encontram disponíveis comercialmente e a sua síntese é também descrita. No segundo capítulo reporta-se uma nova e eficiente rota de síntese de (Z)- e (E)-3-estirilquinolin-4(1H)-onas a partir da reacção de Wittig da 4-cloro-3- formilquinolina e de 3-formilquinolin-4(1H)-onas com benzilidenotrifenilfosforanos. As (Z)-3-estirilquinolin-4(1H)-onas foram obtidas com elevada diastereoselectividade a partir da reacção das 3-formilquinolin- 4(1H)-onas N-protegidas enquanto que as (E)-3-estirilquinolin-4(1H)-onas foram preparadas através da reacção de Wittig da 4-cloro-3-formilquinolina seguida da hidrólise ácida das respectivas (Z)- e (E)-4-cloro-3-estirilquinolinas obtidas. Ambas as rotas sintéticas são eficientes, independentemente dos substituintes dos benzilidenotrifenilfosforanos. No terceiro capítulo, descreve-se um novo método de síntese de novas benzo[b]acridonas a partir da reacção de Diels-Alder de 3-formilquinolin-4(1H)- onas N-protegidas, que actuam como dienófilos, com dienos altamente reactivos, os orto-benzoquinodimetanos, preparados in situ através da extrusão térmica do dióxido de enxofre dos respectivos 2,2-dióxidos de 1,3-dihidrobenzo[ c]tiofeno. A reacção de cicloadição das 3-formilquinolin-4(1H)-onas N-protegidas com orto-benzoquinodimetanos origina as benzo[b]-1,6,6a,12atetra- hidroacridin-12(7H)-onas esperadas, que são o resultado da referida cicloadição seguida de desformilação in situ, e mostrou ser eficiente apenas quando o grupo amina está derivatizado com um grupo sacador de electrões. A desidrogenação destas benzo[b]-1,6,6a,12a-tetra-hidroacridin-12(7H)-onas em dimetilsulfóxido utilizando uma quantidade catalítica de iodo foi também descrita e originou como produto principal as benzo[b]acridin-12(7H)-onas N-desprotegidas. Todos os compostos novos sintetizados foram caracterizados por diversas técnicas analíticas, especialmente por estudos espectroscópicos de ressonância magnética nuclear (RMN), incluindo espectros de 1H e 13C, bidimensionais de correlação espectroscópica homonuclear e heteronuclear e de efeito nuclear de Overhauser (NOESY). Foram também efectuados, sempre que possível, espectros de massa (EM) e análises elementares ou espectros de massa de alta resolução (EMAR) para todos os compostos novos sintetizados. O tautomerismo da 3-formil- e 3-estirilquinolin-4(1H)-onas e as isomerizações (E) (Z) e rotacional das 3-estirilquinolin-4(1H)-onas e das 4-cloro-3-estirilquinolinas foram estudados através de ressonância magnética nuclear experimental (RMN 1H e 13C) e teórica [B3LYP/6-311++G(d,p)].

Photothermal deflection measurement on heat transport in GaAs epitaxial layers

In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons.

Photothermal deflection measurement on heat transport in GaAs epitaxial layers

In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons

Photothermal deflection measurement on heat transport in GaAs epitaxial layers

In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons

Spin-orbit effects in GaAs quantum wells: Interplay between Rashba, Dresselhaus, and Zeeman interactions

The interplay between Rashba, Dresselhaus, and Zeeman interactions in a quantum well submitted to an external magnetic field is studied by means of an accurate analytical solution of the Hamiltonian, including electron-electron interactions in a sum-rule approach. This solution allows us to discuss the influence of the spin-orbit coupling on some relevant quantities that have been measured in inelastic light scattering and electron-spin resonance experiments on quantum wells. In particular, we have evaluated the spin-orbit contribution to the spin splitting of the Landau levels and to the splitting of charge- and spin-density excitations. We also discuss how the spin-orbit effects change if the applied magnetic field is tilted with respect to the direction perpendicular to the quantum well.

Spin-orbit effects in GaAs quantum wells: Interplay between Rashba, Dresselhaus, and Zeeman interactions

The interplay between Rashba, Dresselhaus, and Zeeman interactions in a quantum well submitted to an external magnetic field is studied by means of an accurate analytical solution of the Hamiltonian, including electron-electron interactions in a sum-rule approach. This solution allows us to discuss the influence of the spin-orbit coupling on some relevant quantities that have been measured in inelastic light scattering and electron-spin resonance experiments on quantum wells. In particular, we have evaluated the spin-orbit contribution to the spin splitting of the Landau levels and to the splitting of charge- and spin-density excitations. We also discuss how the spin-orbit effects change if the applied magnetic field is tilted with respect to the direction perpendicular to the quantum well.

Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy

We present the results of GaInNAs/GaAs quantum dot structures with GaAsN barrier layers grown by solid source molecular beam epitaxy. Extension of the emission wavelength of GaInNAs quantum dots by ~170nm was observed in samples with GaAsN barriers in place of GaAs. However, optimization of the GaAsN barrier layer thickness is necessary to avoid degradation in luminescence intensity and structural property of the GaInNAs dots. Lasers with GaInNAs quantum dots as active layer were fabricated and room-temperature continuous-wave lasing was observed for the first time. Lasing occurs via the ground state at ~1.2μm, with threshold current density of 2.1kA/cm[superscript 2] and maximum output power of 16mW. These results are significantly better than previously reported values for this quantum-dot system.

Genotipificación de HLA-B en pacientes colombianos afectados por el síndrome Stevens-Johnson y la Necrólisis Epidérmica Tóxica

Las reacciones alérgicas a medicamentos cutáneas severas (RAM) como el Síndrome Stevens Johnson (SJS) y la Necrólisis Epidérmica Tóxica (NET),caracterizadas por exantema, erosión de la piel y las membranas mucosas, flictenas, desprendimiento de la piel secundario a la muerte de queratinocitos y compromiso ocular. Son infrecuentes en la población pero con elevada morbi-mortalidad, se presentan luego de la administración de diferentes fármacos. En Asia se ha asociado el alelo HLA-B*15:02 como marcador genético para SJS. En Colombia no hay datos de la incidencia de estas RAM, ni de la relación con medicamentos específicos o potenciales y tampoco estudios de aproximación genómica de genes de susceptibilidad.

El lenguaje ideográfico : una metodología de la enseñanza de las Ciencias Sociales en la E.G.B.

Ofrecer un método para la enseñanza de las Ciencias Sociales en EGB basado en el lenguaje ideográfico. Su finalidad es reducir el fracaso escolar. Alumnos de un colegio público de Madrid de entre once y catorce años, que cursan el tercer ciclo de EGB. Se lleva a cabo una experiencia educativa en el área de Ciencias Sociales donde se utiliza el lenguaje ideográfico en el proceso de enseñanza. La práctica se fundamenta en una base teórica psicolingüística e histórica. Finaliza con una parte empírica, en la que se lleva a cabo un análisis estadístico de los datos obtenidos en el proceso de enseñanza y en un estudio de opinión sobre los medios audiovisuales realizado entre la población escolar. Se utilizan tests de inteligencia y cuestionarios de opinión para la recogida de datos. Además, se usa el programa Excel para el tratamiento estadístico de la información. Se utiliza el método intuitivo-deductivo. El alumno asimila mejor lo aprendido ya que él elabora su propio material de estudio. Es importante la intervención del alumno en el proceso de enseñanza y aprendizaje. Su participación en la elaboración de su propio libro de texto contribuye al desarrollo de su estructura cognitiva.

Hybrid reflections in InGaP/GaAs(001) by synchrotron radiation multiple diffraction

Hybrid reflections (HRs) involving substrate and layer planes (SL type) [Morelhao et al., Appl. Phys. Len. 73 (15), 2194 (1998)] observed in Chemical Beam Epitaxy (CBE) grown InGaP/GaAs(001) structures were used as a three-dimensional probe to analyze structural properties of epitaxial layers. A set of (002) rocking curves (omega-scan) measured for each 15 degrees in the azimuthal plane was arranged in a pole diagram in phi for two samples with different layer thicknesses (#A -58 nm and #B - 370 nm) and this allowed us to infer the azimuthal epilayer homogeneity in both samples. Also, it was shown the occurrence of (1 (1) over bar3) HR detected even in the thinner layer sample. Mappings of the HR diffraction condition (omega:phi) allowed to observe the crystal truncation rod through the elongation of HR shape along the substrate secondary reflection streak which can indicate in-plane match of layer/substrate lattice parameters. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder

In this work, we present a detailed study on the optical properties of two GaAs/Al(0.35)Ga(0.65)As coupled double quantum wells (CDQWs) with inter-well barriers of different thicknesses, by using photoluminescence (PL) spectroscopy. The two CDQWs were grown in a single sample, assuring very similar experimental conditions for measurements of both. The PL spectrum of each CDQW exhibits two recombination channels which can be accurately identified as the excitonic e(1)-hh(1) transitions originated from CDQWs of different effective dimensions. The PL spectra characteristics and the behavior of the emissions as a function of temperature and excitation power are interpreted in the scenario of the bimodal interface roughness model, taking into account the exciton migration between the two regions considered in this model and the difference in the potential fluctuation levels between those two regions. The details of the PL spectra behavior as a function of excitation power are explained in terms of the competition between the band gap renormalization (BGR) and the potential fluctuation effects. The results obtained for the two CDQWs, which have different degrees of potential fluctuation, are also compared and discussed. (C) 2009 Elsevier B.V. All rights reserved.

Compressibility of electron liquid in the quantized Hall phase of GaAs/AlGaAs multi-layers

Magneto-capacitance was studied in narrow miniband GaAs/AlGaAs superlattices where quasi-two dimensional electrons revealed the integer quantum Hall effect. The interwell tunneling was shown to reduce the effect of the quantization of the density of states on the capacitance of the superlattices. In such case the minimum of the capacitance observed at the filling factor nu = 2 was attributed to the decrease of the electron compressibility due to the formation of the incompressible quantized Hall phase. In accord with the theory this phase was found strongly inhomogeneous. The incompressible fraction of the quantized Hall phase was demonstrated to rapidly disappear with the increasing temperature. (C) 2008 Elsevier B.V. All rights reserved.