973 resultados para CRANIOCERVICAL JUNCTION


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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Dissertação apresentada ao Instituto Politécnico do Porto para obtenção do Grau de Mestre em Logística Orientada por: Professor Doutor José António Baptista da Costa Coorientada por: Dr. Lourenço Fernando Gomes Pinheiro

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Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia de Electrónica e Telecomunicações

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O estudo das curvas características de um transístor permite conhecer um conjunto de parâmetros essenciais à sua utilização tanto no domínio da amplificação de sinais como em circuitos de comutação. Deste estudo é possível obter dados em condições que muitas vezes não constam na documentação fornecida pelos fabricantes. O trabalho que aqui se apresenta consiste no desenvolvimento de um sistema que permite de forma simples, eficiente e económica obter as curvas características de um transístor (bipolar de junção, efeito de campo de junção e efeito de campo de metal-óxido semicondutor), podendo ainda ser utilizado como instrumento pedagógico na introdução ao estudo dos dispositivos semicondutores ou no projecto de amplificadores transistorizados. O sistema é constituído por uma unidade de condicionamento de sinal, uma unidade de processamento de dados (hardware) e por um programa informático que permite o processamento gráfico dos dados obtidos, isto é, traçar as curvas características do transístor. O seu princípio de funcionamento consiste na utilização de um conversor Digital-Analógico (DAC) como fonte de tensão variável, alimentando a base (TBJ) ou a porta (JFET e MOSFET) do dispositivo a testar. Um segundo conversor fornece a variação da tensão VCE ou VDS necessária à obtenção de cada uma das curvas. O controlo do processo é garantido por uma unidade de processamento local, baseada num microcontrolador da família 8051, responsável pela leitura dos valores em corrente e em tensão recorrendo a conversores Analógico-Digital (ADC). Depois de processados, os dados são transmitidos através de uma ligação USB para um computador no qual um programa procede à representação gráfica, das curvas características de saída e à determinação de outros parâmetros característicos do dispositivo semicondutor em teste. A utilização de componentes convencionais e a simplicidade construtiva do projecto tornam este sistema económico, de fácil utilização e flexível, pois permite com pequenas alterações

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Tese de Doutoramento, Ciências do Mar, especialidade de Biologia Marinha, 19 de Dezembro de 2015, Universidade dos Açores.

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Dissertação de Mestrado, Vulcanologia e Riscos Geológicos, 17 de Novembro de 2015, Universidade dos Açores.

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We investigate the influence of strong directional, or bonding, interactions on the phase diagram of complex fluids, and in particular on the liquid-vapour critical point. To this end we revisit a simple model and theory for associating fluids which consist of spherical particles having a hard-core repulsion, complemented by three short-ranged attractive sites on the surface (sticky spots). Two of the spots are of type A and one is of type B; the interactions between each pair of spots have strengths [image omitted], [image omitted] and [image omitted]. The theory is applied over the whole range of bonding strengths and results are interpreted in terms of the equilibrium cluster structures of the coexisting phases. In systems where unlike sites do not interact (i.e. where [image omitted]), the critical point exists all the way to [image omitted]. By contrast, when [image omitted], there is no critical point below a certain finite value of [image omitted]. These somewhat surprising results are rationalised in terms of the different network structures of the two systems: two long AA chains are linked by one BB bond (X-junction) in the former case, and by one AB bond (Y-junction) in the latter. The vapour-liquid transition may then be viewed as the condensation of these junctions and we find that X-junctions condense for any attractive [image omitted] (i.e. for any fraction of BB bonds), whereas condensation of the Y-junctions requires that [image omitted] be above a finite threshold (i.e. there must be a finite fraction of AB bonds).

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Trabalho de Projeto para obtenção do grau de Mestre em Engenharia Civil na Área de Especialização de Estruturas

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Relatório Final de Estágio apresentado à Escola Superior de Dança, com vista à obtenção do grau de Mestre em Ensino de Dança.

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Wireless communications are widely used for various applications, requiring antennas with different features. Often, to achieve the desired radiation pattern, is necessary to employ antenna arrays, using non-uniform excitation on its elements. Power dividers can be used and the best known are the T-junction and the Wilkinson power divider, whose main advantage is the isolation between output ports. In this paper the impact of this isolation on the overall performance of a circularly polarized planar antenna array using non-uniform excitation is investigated. Results show a huge decrease of the array bandwidths either in terms of return loss or in polarization, without resistors. © 2014 IEEE.

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With very few exceptions, M > 4 tectonic earthquakes in the Azores show normal fault solution and occur away from the islands. Exceptionally, the 1998 shock was pure strike-slip and occurred within the northern edge of the Pico-Faial Ridge. Fault plane solutions show two possible planes of rupture striking ENE-WSW (dextral) and NNW-SSE (sinistral). The former has not been recognised in the Azores, but is parallel to the transform direction related to the relative motion between the Eurasia and Nubia plates. Therefore, the main question we address in the present study is: do transform faults related to the Eurasia/Nubia plate boundary exist in the Azores? Knowing that the main source of strain is related to plate kinematics, we conclude that the sinistral strike-slip NNW-SSE fault plane solution is not consistent with either the fault dip (ca. 65, which is typical of a normal fault) or the ca. ENE-WSW direction of maximum extension; both are consistent with a normal fault, as observed in most major earthquakes on faults striking around NNW-SSE in the Azores. In contrast, the dextral strike-slip ENE-WSW fault plane solution is consistent with the transform direction related to the anticlockwise rotation of Nubia relative to Eurasia. Altogether, tectonic data, measured ground motion, observed destruction, and modelling are consistent with a dextral strike-slip source fault striking ENE-WSW. Furthermore, the bulk clockwise rotation measured by GPS is typical of bookshelf block rotations observed at the termination of such master strike-slip faults. Therefore, we suggest that the 1998 earthquake can be related to the WSW termination of a transform (ENE-WSW fault plane solution) associated with the Nubia-Eurasia diffuse plate boundary. (C) 2014 Elsevier B.V. All rights reserved.

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The morpho-structural evolution of oceanic islands results from competition between volcano growth and partial destruction by mass-wasting processes. We present here a multi-disciplinary study of the successive stages of development of Faial (Azores) during the last 1 Myr. Using high-resolution digital elevation model (DEM), and new K/Ar, tectonic, and magnetic data, we reconstruct the rapidly evolving topography at successive stages, in response to complex interactions between volcanic construction and mass wasting, including the development of a graben. We show that: (1) sub-aerial evolution of the island first involved the rapid growth of a large elongated volcano at ca. 0.85 Ma, followed by its partial destruction over half a million years; (2) beginning about 360 ka a new small edifice grew on the NE of the island, and was subsequently cut by normal faults responsible for initiation of the graben; (3) after an apparent pause of ca. 250 kyr, the large Central Volcano (CV) developed on the western side of the island at ca 120 ka, accumulating a thick pile of lava flows in less than 20 kyr, which were partly channelized within the graben; (4) the period between 120 ka and 40 ka is marked by widespread deformation at the island scale, including westward propagation of faulting and associated erosion of the graben walls, which produced sedimentary deposits; subsequent growth of the CV at 40 ka was then constrained within the graben, with lava flowing onto the sediments up to the eastern shore; (5) the island evolution during the Holocene involves basaltic volcanic activity along the main southern faults and pyroclastic eruptions associated with the formation of a caldera volcano-tectonic depression. We conclude that the whole evolution of Faial Island has been characterized by successive short volcanic pulses probably controlled by brief episodes of regional deformation. Each pulse has been separated by considerable periods of volcanic inactivity during which the Faial graben gradually developed. We propose that the volume loss associated with sudden magma extraction from a shallow reservoir in different episodes triggered incremental downward graben movement, as observed historically, when immediate vertical collapse of up to 2 m was observed along the western segments of the graben at the end of the Capelinhos eruptive crises (1957-58).

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In this paper we present results about the functioning of a multilayered a-SiC:H heterostructure as a device for wavelength-division demultiplexing of optical signals. The device is composed of two stacked p-i-n photodiodes, both optimized for the selective collection of photogenerated carriers. Band gap engineering was used to adjust the photogeneration and recombination rates profiles of the intrinsic absorber regions of each photodiode to short and long wavelength absorption and carrier collection in the visible spectrum. The photocurrent signal using different input optical channels was analyzed at reverse and forward bias and under steady state illumination. This photocurrent is used as an input for a demux algorithm based on the voltage controlled sensitivity of the device. The device functioning is explained with results obtained by numerical simulation of the device, which permit an insight to the internal electric configuration of the double heterojunction.These results address the explanation of the device functioning in the frequency domain to a wavelength tunable photocapacitance due to the accumulation of space charge localized at the internal junction. The existence of a direct relation between the experimentally observed capacitive effects of the double diode and the quality of the semiconductor materials used to form the internal junction is highlighted.