SnO_2光敏、气敏元件的性能研究

报道了用常压蒸发法制备的SnO2薄膜的光敏性能和用烧结法制备的圆珠状气敏元件的气敏性能。初步探讨了其结构与机理。指出进行集光敏、气敏于一体的传感器的研究。

氧化物的非化学计量性和催化作用

非化学计量化合物是针对组分成定比的化学计量化合物而言的。晶体化合物发生化学计量偏离是由于晶体内存在着原子或电子缺陷的关系。这对化合物的电、磁、光等性质发生影响是不言而喻的。不过更重要的还是因此在固体表面和相、粒界面上产生与体相不同的化学组成。近年来,正在研究和开发的一系列高技术材料,诸如压敏电阻(Varistor),正温度系数热敏电阻(PTCR Thermistor)、超导材料、光敏传感器件等,就是利用相界面和晶面上由这一效

湖南芙蓉锡多金属矿床成矿流体地球化学研究

锡的分布和成矿作用通常与花岗岩浆作用具有十分密切的联系。以往研究表明锡矿化与高度分异的S型花岗岩或陆壳改造型花岗岩具有密切的成因联系，但近年来随着大量与A型花岗岩有关的锡矿床的发现，人们开始关注A型花岗岩与锡成矿关系的研究。相对于与S型花岗岩有关的锡矿床来说，与A型花岗岩有关的锡矿床成成矿机理的研究积累少，研究程度相对较低。 湘南地区位于南岭多金属成矿带中部，是我国华南地区重要的有色金属成矿带。近年来在该成矿带上新发现的芙蓉超大型锡多金属矿床为世界瞩目，该矿床的形成与骑田岭花岗岩具有密切的时空关系。近年来研究显示骑田岭花岗岩具有A型花岗岩的特征。本文以芙蓉超大型锡多金属矿床和相关的骑田岭岩体为研究对象，在前人研究的基础上，运用岩石学、矿物学、流体包裹体、微量元素和稳定同位素地球化学等理论和方法，对芙蓉锡矿成矿流体的地球化学特征及其演化机制进行了系统的研究，并在此基础上探讨了骑田岭花岗岩体与芙蓉锡矿间的成因联系和芙蓉锡矿的成因机制。论文取得的主要认识包括以下几个方面： 1. 运用矿物学、岩石化学、微量元素地球化学以及同位素地球化学方法，进一步证实了骑田岭花岗岩体具有A型花岗岩的特征，总体具有偏铝质-弱过铝质、高硅富碱高钾的地球化学特征，早晚两期花岗岩具有同源岩浆演化特征，属于A2型花岗岩。同位素地球化学数据显示花岗岩体具有EMII型富集地幔的特征，形成于华南大陆地壳拉张减薄的构造环境，成岩过程中有地幔物质加入。 2. 通过对矿石矿物组构和成分的岩矿鉴定、扫描电镜和电子探针分析，确定了芙蓉锡多金属矿床原生夕卡岩形成于较氧化的环境，成岩作用主要与早期侵入的角闪石黑云母花岗岩密切相关，锡主要以Sn(IV)进入夕卡岩的造岩矿物晶体内。退蚀变夕卡岩、云英岩和蚀变花岗岩矿化为锡成矿主阶段，三种矿化类型的成矿流体具有相似的地球化学性质，即富Cl、Ti和Sn的特征，而锡石硫化物型矿石形成于成矿晚阶段。 3. 运用流体包裹体地球化学理论和方法以及激光拉曼分析技术，揭示了芙蓉锡矿的成矿流体组成、形成的物理化学条件和演化特征。芙蓉锡多金属矿田成矿流体为CO2-CH4-CaCl2- NaCl-KCl不混溶体系，成矿过程中发生流体不混溶作用。芙蓉锡矿成矿流体盐度为0~50.63 wt%NaCl eq.，密度为0.31~1.12g/cm3，主成矿阶段热液流体的均一温度主要集中在300-450℃，流体压力为179-1800bar，成矿晚阶段锡石硫化物型矿石中均一温度主要集中在150~300℃，流体压力为400-600bar。成矿流体特别是主成矿阶段的流体成矿过程中普遍发生了沸腾现象。从主成矿阶段到成矿晚阶段、矿化期后，热液流体盐度呈降低的趋势，流体成分也从含CO2、CH4的CaCl2-NaCl-KCl-H2O水溶液体系转化为不含CO2的简单NaCl-KCl-H2O水溶液体系。 4. 通过分析主要矿化类型矿石中脉石矿物的稀土元素和稳定同位素特征，揭示了成矿流体来源。研究表明芙蓉矿床成矿期热液脉石矿物的稀土元素地球化学和稳定同位素地球化学显示了与本区花岗岩具明显的相似性，骑田岭黑云母花岗岩形成过程中分异出的岩浆期后热液应是芙蓉矿床成矿流体的主要来源，成矿过程中有少量经过深循环的大气降水加入。 5. 在总结前人研究成果的基础上，综合上述研究，探讨了骑田岭花岗岩体与芙蓉锡矿间的成因联系和芙蓉锡矿的成因机制。本文认为骑田岭岩体中黑云母花岗岩与Sn成矿具有密切的成因联系，芙蓉锡矿田的成矿流体主要来源于黑云母花岗岩岩浆结晶期后分异出的富Cl和Sn的热液流体。芙蓉锡矿成矿流体中锡主要呈Sn(II)与氯离子形成亚锡氯络合物进行迁移，低温的大气降水与高温的岩浆热液流体混合，导致流体体系温度、盐度、压力的降低和富CO2相流体的分离（CO2去气作用），流体的氧逸度升高，使得Sn(II)与氯离子形成亚锡氯络合物解体，Sn(II)被氧化成SnO2并发生沉淀作用。这种流体的混合作用是导致锡石沉淀的最有效的机制。

Structure and chemical composition of supported Pt-Sn electrocatalysts for ethanol oxidation

Carbon supported PtSn alloy and PtSnOx particles with nominal Pt:Sn ratios of 3:1 were prepared by a modified polyol method. High resolution transmission electron microscopy (HRTEM) and X-ray microchemical analysis were used to characterize the composition, size, distribution, and morphology of PtSn particles. The particles are predominantly single nanocrystals with diameters in the order of 2.0-3.0 nm. According to the XRD results, the lattice constant of Pt in the PtSn alloy is dilated due to Sn atoms penetrating into the Pt crystalline lattice. While for PtSnOx nanoparticles, the lattice constant of Pt only changed a little. HRTEM micrograph of PtSnOx clearly shows that the change of the spacing of Pt (111) plane is neglectable, meanwhile, SnO2 nanoparticles, characterized with the nominal 0.264 nm spacing of SnO2 (10 1) plane, were found in the vicinity of Pt particles. In contrast, the HRTEM micrograph of PtSn alloy shows that the spacing of Pt (111) plane extends to 0.234 nm from the original 0.226 nm. High resolution energy dispersive X-ray spectroscopy (HR-EDS) analyses show that all investigated particles in the two PtSn catalysts represent uniform Pt/Sn compositions very close to the nominal one. Cyclic voltammograms (CV) in sulfuric acid show that the hydrogen ad/desorption was inhibited on the surface of PtSn alloy compared to that on the surface of the PtSnOx catalyst. PtSnOx catalyst showed higher catalytic activity for ethanol electro-oxidation than PtSn alloy from the results of chronoamperometry (CA) analysis and the performance of direct ethanol fuel cells (DEFCs). It is deduced that the unchanged lattice parameter of Pt in the PtSnOx catalyst is favorable to ethanol adsorption and meanwhile, tin oxide in the vicinity of Pt nanoparticles could offer oxygen species conveniently to remove the CO-like species of ethanolic residues to free Pt active sites. (C) 2005 Elsevier Ltd. All rights reserved.

Multicomponent gas-mixture measurements using an array of gas sensors and an artificial neural-network

An Electronic Nose is being jointly developed between the University of Greenwich and the Institute of Intelligent Machines to detect the gases given off from an oil filled transformer when it begins to break down. The gas sensors being used are very simple, consisting of a layer of Tin Oxide (SnO2) which is heated to approximately 640 K and the conductivity varies with the gas concentrations. Some of the shortcomings introduced by the commercial gas sensors available are being overcome by the use of an integrated array of gas sensors and the use of artificial neural networks which can be 'taught' to recognize when the gas contains several components. At present simulated results have achieved up to a 94% success rate of recognizing two component gases and future work will investigate alternative neural network configurations to maintain this success rate with practical measurements.

Room Temperature, Electrochemical Generation of Ozone with 50% Current Efficiency in 0.5M Sulfuric Acid at Cell Voltages <3V.

The electrochemical generation of ozone by Ni/Sb-SnO2 anodes immersed in 0.5M H2SO4 was assessed in both flow and recycle systems using the same electrochemical cell. The anodes were found to exhibit current efficiencies of up to 50% for ozone generation under flow conditions at room temperature, with an optimum mole ratio in the precursor solutions of ca. 500:8:3 Sn:Sb:Ni and optimum cell voltage of 2.7V. A comparison of the data obtained under flow and recycle conditions suggests that the presence of ozone in the anolyte inhibits its formation. The minimum electrical energy cost achieved, of 18 kWh kg1 compares favorably with estimated costs for Cold Corona Discharge generally reported in the literature, especially when the very significant advantages of electrochemical ozone generation are taken into account.

UV dosimeter based on dichloroindophenol and tin(IV) oxide

A UVB specific dosimeter is described comprising: a redox dye (2,6-dichloroindophenol, DCIP), a semiconductor ( tin(IV) oxide, SnO2) and a sacrificial electron donor ( glycerol) dispersed in a polymer ( hydroxy ethyl cellulose, HEC) film. The dosimeter is blue in the absence of UVB light but rapidly loses colour on exposure to UVB light. The spectral characteristics of a typical UVB dosimeter film and the mechanism by which the colour change occurs are detailed. DCIP UVB dosimeter films exhibit a response that is related to the irradiance level and duration of UVB exposure, the level of SnO2 present and to a lesser extent the level of glycerol present. The response of the dosimeter appears to be independent of dye concentration and film thickness. Furthermore, DCIP UVB dosimeter films respond to solar simulated light, exhibiting a colour loss that can be simply related to the Minimal Erythemal Dose (MED) exposure for skin type II. As a consequence, such indicators have potential for measuring solar radiation exposure and providing an early warning of erythema for most Caucasian skin (i.e. skin type II).

Structure-reactivity Correlations in the catalytic coupling of ethyne over novel bimetallic Pd/Sn catalysts

The structure, thermal stability, and catalytic behavior of a novel highly dispersed silica-supported Pd/Sn catalyst prepared by an organometallic route have been examined by X-ray photoelectron, X-ray diffraction, and X-ray absorption, fine structure spectroscopies, the latter two measurements being carried outwith an in situ reaction cell. Additional reactor measurements were performed on a more Sn-rich catalyst and on a pure Pd catalyst. Varying the temperature of reduction induced large variations in catalytic performance toward ethyne-coupling reactions. These changes are understandable in terms of the destruction of SnO2-like structures surrounding the Pd core, yielding a skin of metallic Sn which subsequently undergoes intermixing with Pd. The overall thermal and catalytic behavior of these highly dispersed materials accords well with the analogous single-crystal model system.

First comprehensive peat depositional records for tin, lead and copper associated with the antiquity of Europe's largest cassiterite deposits

Tin, as a constituent of bronze, was central to the technological development of early societies, but cassiterite (SnO2) deposits were scarce and located distantly from the centres of Mediterranean civilizations. As Britain had the largest workable ore deposits in the ancient Western world, this has led to much historical speculation and myth regarding the long-distance trading of tin from the Bronze Age onwards. Here we establish the first detailed chronology for tin, along with lead and copper deposition, into undisturbed ombrotrophic (rain-fed) peat bogs located at Bodmin Moor and Dartmoor in the centre of the British tin ore fields. Sustained elevated tin deposition is demonstrated clearly, with peaks occurring at 100-400 and 700-1000 calendar years AD - contemporaneous with the Roman and Anglo-Saxon periods respectively. While pre-Roman Iron Age tin exploitation undoubtedly took place, it was on a scale that did not result in convincingly enhanced deposition of the metal. The deposition of lead in the peat record provides evidence of a pre-Roman metal-based economy in southwest Britain. Emerging in the 4th century BC, this was centred on copper and lead ore processing that expanded exponentially and then collapsed upon Roman colonization during the 1st century AD. (C) 2011 Elsevier Ltd. All rights reserved.

Spectroscopic techniques for characterizing portuguese glazed ceramics:a contribution to the study of ancient faiences of Coimbra

Tese de doutoramento, Física, Universidade de Lisboa, Faculdade de Ciências, 2013

Calculs ab initio de structures électroniques et de leur dépendance en température avec la méthode GW

Cette thèse porte sur le calcul de structures électroniques dans les solides. À l'aide de la théorie de la fonctionnelle de densité, puis de la théorie des perturbations à N-corps, on cherche à calculer la structure de bandes des matériaux de façon aussi précise et efficace que possible. Dans un premier temps, les développements théoriques ayant mené à la théorie de la fonctionnelle de densité (DFT), puis aux équations de Hedin sont présentés. On montre que l'approximation GW constitue une méthode pratique pour calculer la self-énergie, dont les résultats améliorent l'accord de la structure de bandes avec l'expérience par rapport aux calculs DFT. On analyse ensuite la performance des calculs GW dans différents oxydes transparents, soit le ZnO, le SnO2 et le SiO2. Une attention particulière est portée aux modèles de pôle de plasmon, qui permettent d'accélérer grandement les calculs GW en modélisant la matrice diélectrique inverse. Parmi les différents modèles de pôle de plasmon existants, celui de Godby et Needs s'avère être celui qui reproduit le plus fidèlement le calcul complet de la matrice diélectrique inverse dans les matériaux étudiés. La seconde partie de la thèse se concentre sur l'interaction entre les vibrations des atomes du réseau cristallin et les états électroniques. Il est d'abord montré comment le couplage électron-phonon affecte la structure de bandes à température finie et à température nulle, ce qu'on nomme la renormalisation du point zéro (ZPR). On applique ensuite la méthode GW au calcul du couplage électron-phonon dans le diamant. Le ZPR s'avère être fortement amplifié par rapport aux calculs DFT lorsque les corrections GW sont appliquées, améliorant l'accord avec les observations expérimentales.

Spray Pyrolysed Zinc Oxide Thin Films : Effects of Doping and Ion Beam Irradiation

In recent years scientists have made rapid and significant advances in the field of semiconductor physics. One of the most important fields of current interest in materials science is the fundamental aspects and applications of conducting transparent oxide thin films (TCO). The characteristic properties of such coatings are low electrical resistivity and high transparency in the visible region. The first semitransparent and electrically conducting CdO film was reported as early as in 1907 [1]. Though early work on these films was performed out of purely scientific interest, substantial technological advances in such films were made after 1940. The technological interest in the study of transparent semiconducting films was generated mainly due to the potential applications of these materials both in industry and research. Such films demonstrated their utility as transparent electrical heaters for windscreens in the aircraft industry. However, during the last decade, these conducting transparent films have been widely used in a variety of other applications such as gas sensors [2], solar cells [3], heat reflectors [4], light emitting devices [5] and laser damage resistant coatings in high power laser technology [6]. Just a few materials dominate the current TCO industry and the two dominant markets for TCO’s are in architectural applications and flat panel displays. The architectural use of TCO is for energy efficient windows. Fluorine doped tin oxide (FTO), deposited using a pyrolysis process is the TCO usually finds maximum application. SnO2 also finds application ad coatings for windows, which are efficient in preventing radiative heat loss, due to low emissivity (0.16). Pyrolitic tin oxide is used in PV modules, touch screens and plasma displays. However indium tin oxide (ITO) is mostly used in the majority of flat panel display (FPD) applications. In FPDs, the basic function of ITO is as transparent electrodes. The volume of FPD’s produced, and hence the volume of ITO coatings produced, continues to grow rapidly. But the current increase in the cost of indium and the scarcity of this material created the difficulty in obtaining low cost TCOs. Hence search for alternative TCO materials has been a topic of active research for the last few decades. This resulted in the development of binary materials like ZnO, SnO2, CdO and ternary materials like II Zn2SnO4, CdSb2O6:Y, ZnSO3, GaInO3 etc. The use of multicomponent oxide materials makes it possible to have TCO films suitable for specialized applications because by altering their chemical compositions, one can control the electrical, optical, chemical and physical properties. But the advantages of using binary materials are the easiness to control the chemical compositions and depositions conditions. Recently, there were reports claiming the deposition of CdO:In films with a resistivity of the order of 10-5 ohm cm for flat panel displays and solar cells. However they find limited use because of Cd-Toxicity. In this regard, ZnO films developed in 1980s, are very useful as these use Zn, an abundant, inexpensive and nontoxic material. Resistivity of this material is still not very low, but can be reduced through doping with group-III elements like In, Al or Ga or with F [6]. Hence there is a great interest in ZnO as an alternative of ITO. In the present study, we prepared and characterized transparent and conducting ZnO thin films, using a cost effective technique viz Chemical Spray Pyrolysis (CSP). This technique is also suitable for large area film deposition. It involves spraying a solution, (usually aqueous) containing soluble salts of the constituents of the desired compound, onto a heated substrate.

Characterisation of Transparent Conducting Thin Films Grown by Pulsed Laser Deposition and RF Magnetron Sputtering

Materials exhibiting transparency and electrical conductivity simultaneously, transparent conductors, Transparent conducting oxides (TCOs), which have high transparency through the visible spectrum and high electrical conductivity are already being used in numerous applications. Low-emission windows that allow visible light through while reflecting the infrared, this keeps the heat out in summer, or the heat in, in winter. A thin conducting layer on or in between the glass panes achieves this. Low-emission windows use mostly F-doped SnO2. Most of these TCO’s are n type semiconductors and are utilized in a variety of commercial applications, such as flat-panel displays, photovoltaic devices, and electrochromic windows, in which they serve as transparent electrodes. Novel functions may be integrated into the materials since oxides have a variety of elements and crystal structures, providing great potential for realizing a diverse range of active functions. However, the application of TCOs has been restricted to transparent electrodes, notwithstanding the fact that TCOs are n-type semiconductors. The primary reason is the lack of p-type TCOs, because many of the active functions in semiconductors originate from the nature of the pn-junction. In 1997, H. Kawazoe et al.[2] reported CuAlO2 thin films as a first p-type TCO along with a chemical design concept for the exploration of other p-type TCOs.

Growth and Characterization of ZnO based Heterojunction diodes and ZnO Nanostructuresby Pulsed Laser Ablation

Transparent conducting oxides (TCO’s) have been known and used for technologically important applications for more than 50 years. The oxide materials such as In2O3, SnO2 and impurity doped SnO2: Sb, SnO2: F and In2O3: Sn (indium tin oxide) were primarily used as TCO’s. Indium based oxides had been widely used as TCO’s for the past few decades. But the current increase in the cost of indium and scarcity of this material created the difficulty in obtaining low cost TCO’s. Hence the search for alternative TCO material has been a topic of active research for the last few decades. This resulted in the development of various binary and ternary compounds. But the advantages of using binary oxides are the easiness to control the composition and deposition parameters. ZnO has been identified as the one of the promising candidate for transparent electronic applications owing to its exciting optoelectronic properties. Some optoelectronics applications of ZnO overlap with that of GaN, another wide band gap semiconductor which is widely used for the production of green, blue-violet and white light emitting devices. However ZnO has some advantages over GaN among which are the availability of fairly high quality ZnO bulk single crystals and large excitonic binding energy. ZnO also has much simpler crystal-growth technology, resulting in a potentially lower cost for ZnO based devices. Most of the TCO’s are n-type semiconductors and are utilized as transparent electrodes in variety of commercial applications such as photovoltaics, electrochromic windows, flat panel displays. TCO’s provide a great potential for realizing diverse range of active functions, novel functions can be integrated into the materials according to the requirement. However the application of TCO’s has been restricted to transparent electrodes, ii notwithstanding the fact that TCO’s are n-type semiconductors. The basic reason is the lack of p-type TCO, many of the active functions in semiconductor originate from the nature of pn-junction. In 1997, H. Kawazoe et al reported the CuAlO2 as the first p-type TCO along with the chemical design concept for the exploration of other p-type TCO’s. This has led to the fabrication of all transparent diode and transistors. Fabrication of nanostructures of TCO has been a focus of an ever-increasing number of researchers world wide, mainly due to their unique optical and electronic properties which makes them ideal for a wide spectrum of applications ranging from flexible displays, quantum well lasers to in vivo biological imaging and therapeutic agents. ZnO is a highly multifunctional material system with highly promising application potential for UV light emitting diodes, diode lasers, sensors, etc. ZnO nanocrystals and nanorods doped with transition metal impurities have also attracted great interest, recently, for their spin-electronic applications This thesis summarizes the results on the growth and characterization of ZnO based diodes and nanostructures by pulsed laser ablation. Various ZnO based heterojunction diodes have been fabricated using pulsed laser deposition (PLD) and their electrical characteristics were interpreted using existing models. Pulsed laser ablation has been employed to fabricate ZnO quantum dots, ZnO nanorods and ZnMgO/ZnO multiple quantum well structures with the aim of studying the luminescent properties.

Optical and electrical properties of amorphous zinc tin oxide thin films examined for thin film transistor application

Structural, electronic, and optical properties of amorphous and transparent zinc tin oxide films deposited on glass substrates by pulsed laser deposition (PLD) were examined for two chemical compositions of Zn:Sn=1:1 and 2:1 as a function of oxygen partial pressure PO2 used for the film deposition and annealing temperature. Different from a previous report on sputter-deposited films Chiang et al., Appl. Phys. Lett. 86, 013503 2005 , the PLD-deposited films crystallized at a lower temperature 450 °C to give crystalline ZnO and SnO2 phases. The optical band gaps Tauc gaps were 2.80−2.85 eV and almost independent of oxygen PO2 , which are smaller than those of the corresponding crystals 3.35−3.89 eV . Films deposited at low PO2 showed significant subgap absorptions, which were reduced by postthermal annealing. Hall mobility showed steep increases when carrier concentration exceeded threshold values and the threshold value depended on the film chemical composition. The films deposited at low PO2 2 Pa had low carrier concentrations. It is thought that the low PO2 produced high-density oxygen deficiencies and generated electrons, but these electrons were trapped in localized states, which would be observed as the subgap absorptions. Similar effects were observed for 600 °C crystallized films and their resistivities were increased by formation of subgap states due to the reducing high-temperature condition. High carrier concentrations and large mobilities were obtained in an intermediate PO2 region for the as-deposited films.