Chromosome painting in the long-tailed field mouse provides insights into the ancestral murid karyotype

We report on the hybridization of mouse chromosomal paints to Apodemus sylvaticus, the long-tailed field mouse. The mouse paints detected 38 conserved segments in the Apodemus karyotype. Together with the species reported here there are now six species of rodents mapped with Mus musculus painting probes. A parsimony analysis indicated that the syntenies of nine M. musculus chromosomes were most likely already formed in the muroid ancestor: 3, 4, 7, 9, 14, 18, 19, X and Y. The widespread occurrence of syntenic segment associations of mouse chromosomes 1/17, 2/13, 7/19, 10/17, 11/16, 12/17 and 13/15 suggests that these associations were ancestral syntenies for muroid rodents. The muroid ancestral karyotype probably had a diploid number of about 2n = 54. It would be desirable to have a richer phylogenetic array of species before any final conclusions are drawn about the Muridae ancestral karyotype. The ancestral karyotype presented here should be considered as a working hypothesis. Copyright (C) 2004 S. Karger AG, Basel.

Mitochondrial cytochrome b gene sequence diversity in the Korean hare, Lepus coreanus Thomas (Mammalia, Lagomorpha)

Partial sequences of the mitochondrial cytochrome b gene of the Korean hare (Lepus coreanus) were analyzed to determine the degree of genetic diversity. Nine haPlotyes were observed, and the maximum Tamura-Nei nucleotide distance among them was 2.8%, indicating that genetic diversity of L. coreanus is moderate. In order to clarify the Korean hare's taxonomic status and relationship with the Manchurian hare (L. mandshuricus) and the Chinese hare (L. sinensis), these nine haplotypes of the Korean hare were compared with 13 haplotypes from five other species of eastern Asian Lepus including L. mandshwicus and L. sinensis. The Korean hare was distinct in its cytochrome b gene, and it is confirmed that L. coreanus is a valid species, as noted by Jones and Johnson (1965, Univ. Kansas Publ. (Mus. Nat. Hist.) 16:357). Further analyses of mtDNA cytochrome b gene with additional specimens of L. coreanus from North Korea and other species of Lepus from eastern Asia are needed to clarify the taxonomic status of the divergent mtDNA clades of L. mandshuricus and L. sinensis.

Molecular phylogeny and taxonomy of wood mice (genus Apodemus Kaup, 1829) based on complete mtDNA cytochrome b sequences, with emphasis on Chinese species

Phylogenetic relationships among 15 species of wood mice (genus Apodemus) were reconstructed to explore some long-standing taxonomic problems. The results provided support for the monophyly of the genus Apodemus, but could not reject the hypothesis of paraphyly for this genus. Our data divided the 15 species into four major groups: (1) the Sylvaemus group (A. sylvaticus, A. flavicollis, A. alpicola, and A. uralensis), (2) the Apodemus group (A. peninsulae, A. chevreri, A. agrarius, A. speciosus, A. draco, A. ilex, A. semotus, A. latronum, and A. mystacinus), (3) A. argenteus, and (4) A. gurkha. Our results also suggested that orestes should be a valid subspecies of A. draco rather than an independent species; in contrast, A. ilex from Yunnan may be regarded as a separate species rather than a synonym of orestes or draco. The species level status of A. latronum, tscherga as synonyms of A. uralensis, and A. chevrieri as a valid species and the closest sibling species of A. agrarius were further corroborated by our data. Applying a molecular clock with the divergences of Mus and Rattus set at 12 million years ago (Mya) as a calibration point, it was estimated that five old lineages (A. mystacinus and four major groups above) diverged in the late Miocene (7.82-12.74 Mya). Then the Apodemus group (excluding A. mystacinus) split into two subgroups: agrarius and draco, at about 7.17-9.95 Mya. Four species of the Sylvaemus group were estimated to diverge at about 2.92-5.21 Mya. The Hengduan Mountains Region was hypothesized to have played important roles in Apodemus evolutionary histories since the Pleistocene. (C) 2004 Elsevier Inc. All rights reserved.

Molecular cloning and expression characterization of ApoC-I in the orange-spotted grouper

Endogenous yolk nutrients are crucial for embryo and larval development in fish, but developmental behavior of the genes that control yolk utilization remains unknown. Apolipoproteins have been shown to play important roles in lipid transport and uptake through the circulation system. In this study, EcApoC-I, the first cloned ApoC-I in teleosts, has been screened from pituitary cDNA library of female orange-spotted grouper (Epinephelus coioides), and the deduced amino acid sequence shows 43.5% identity to one zebrafish (Danio rerio) hypothetical protein similar to ApoC-I, and 21.2%, 21.7%, 22.5%, 20%, and 22.5% identities to Apo C-I of human (Homo sapiens), house mouse (Mus musculus), common tree shrew (Tupaia glis), dog (Canis lupus familiaris) and hamadryas baboon (Papio hamadryas), respectively. Although the sequence identity is low, amphipathic alpha-helices with the potential to bind to lipid were predicted to exist in the EcApoC-I. RT-PCR analysis revealed that it was first transcribed in gastrula embryos and maintained a relatively stable expression level during the following embryogenesis. During embryonic and early larval development, a very high level of EcApoC-I expression was in the yolk syncytial layer, indicating that it plays a significant role in yolk degradation and transfers nutrition to the embryo and early larva. By the day 7 after hatching, EcApoC-I transcripts were observed in brain. In adult, EcApoC-I mRNA was detected abundantly in brain and gonad. In transitional gonads, the EcApoC-I expression is restricted to the germ cells. The data suggested that EcApoC-I might play an important role in brain and gonad morphogenesis and growth.

Thermo-optic variable optical attenuator with low power consumption fabricated on silicon-on-insulator by anisotropic chemical etching

A thermo-optic Mach-Zehnder (MZ) variable optical attenuator based on silicon waveguides with a large cross section was designed and fabricated on silicon-on-insulator (SOI) wafer. Multimode interferometers were used as power splitters and combiners in the MZ structure. In order to achieve a smooth interface, anisotropic chemical etching of silicon was used to fabricate the waveguides. Isolating grooves were introduced to reduce power consumption and device length. The device has a low power consumption of 210 mW and a response time of 50 mus. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

Luminescence emission originating from nitrogen doping of beta-Ga2O3 nanowires

Nitrogen-doped beta-Ga2O3 nanowires (GaO NWs) were prepared by annealing the as-grown nanowires in an ammonia atmosphere. The optical properties of the nitrogen-doped GaO NWs were studied by measurements of the photoluminescence and phosphorescence decay at the temperature range between 10 and 300 K. The experimental results revealed that nitrogen doping in GaO NWs induced a novel intensive red-light emission around 1.67 eV, with a characteristic decay time around 136 mus at 77 K, much shorter than that of the blue emission (a decay time of 457 mus). The time decay and temperature-dependent luminescence spectra were calculated theoretically based on a donor-acceptor pair model, which is in excellent agreement with the experimental data. This result suggests that the observed novel red-light emission originates from the recombination of an electron trapped on a donor due to oxygen vacancies and a hole trapped on an acceptor due to nitrogen doping.

Low power 2 x 2 thermo-optic SOI waveguide switch fabricated by anisotropy chemical etching

A 2 x 2 thermo-optic (TO) Mach-Zehnder (MZ) switch based on silicon waveguides with large cross section was designed and fabricated on silicon-on-insulator (SOI) wafer. The multi-mode interferometers (MMI) were used as power splitter and combiner in MZ structure. In order to get smooth interface, anisotropy chemical wet-etching of silicon was used to fabricate the waveguides instead of dry-etching. Additional grooves were introduced to reduce power consumption. The device has a low switching power of 235 mW and a switching speed of 60 mus. (C) 2004 Elsevier B.V. All rights reserved.

Fabrication and analysis of 2x2 thermo-optic SOI waveguide switch with low power consumption and fast response by anisotropy chemical etching

A low power consumption 2 x 2 thermo-optic switch with fast response was fabricated on silicon-on-insulator by anisotropy chemical etching. Blocking trenches were etched on both sides of the phase-shifting arms to shorten device length and reduce power consumption. Thin top cladding layer was grown to reduce power consumption and switching time. The device showed good characteristics, including a low switching power of 145 mW and a fast switching speed of 8 +/- 1 mus, respectively. Two-dimensional finite element method was applied to simulate temperature field in the phase-shifting arm instead of conventional one-dimensional method. According to the simulated result, a new two-dimensional index distribution of phase-shifting arm was determined. Consequently finite-difference beam propagation method was employed to simulate the light propagation in the switch, and calculate the power consumption as well as the switching speed. The experimental results were in good agreement with the theoretical estimations. (C) 2004 Elsevier B.V. All rights reserved.

Silicon-on-insulator-based waveguide switch with fast response

Based on thermo-optical effect of silicon, a 2 x 2 switch is fabricated in silicon-on-insulator by chemical etching. The switch presents an extinction ratio of 26 dB and a power consumption of 169 mW. The response time F similar to 10.5 mus.

Novel folding large-scale optical switch matrix with total internal reflection mirrors on silicon-on-insulator by anisotropy chemical etching

A compact optical switch matrix was designed, in which light circuits were folded by total internal reflective (TIR) mirrors. Two key elements, 2 x 2 switch and TIR mirror, have been fabricated on silicon-on-insulator wafer by anisotropy chemical etching. The 2 x 2 switch showed very low power consumption of 140 mW and a very high speed of 8 +/- 1 mus. An improved design for the TIR mirror was developed, and the fabricated mirror with smooth and vertical reflective facet showed low excess loss of 0.7 +/- 0.3 dB at 1.55 mum.

Fabrication of thermo-optic switch in silicon-on-insulator

Silicon-on-insulator technology has been used to fabricate 2 x 2 thermo-optic switches. The switch shows crosstalk of -23.4 dB and extinction ratio of 18.1 dB in the bar-state. The switching speed is less than 30 mus and the power consumption is about 420 mW The measured excess loss is 1.8 dB. These merits make the switch more attractive for applications in wavelength division multiplexing.

Experimental measurement of microwave-induced electron spin-flip time

The electron spin resonance (ESR) is optically detected by monitoring the microwave-induced changes in the circular polarization of the neutral exciton (X) and the negatively charged exciton (X-) emission in CdTe quantum wells with low density of excess electrons. We find that the circular polarization of the X and X- emission is a mapping of the spin polarization of excess electrons. By analyzing the ESR-induced decrease in the circular polarization degree of the X emission, we deduce the microwave-induced electron spin-flip time >0.1 mus, which is much longer than the recombination time of X and X-. This demonstrates that the optically detected ESR in type I quantum wells with low density of excess electrons does not obey the prerequisite for the conventional optically detected magnetic resonance. (C) 2001 American Institute of Physics.

MMI optical couplers and switches with SOI technology

MMI (multimode interference) coupler, modulator and switch based on SOI (silicon- on-insulator) have been become more and more attractive in optical systems since they show important performances. SiO2 thin cladding layers (<1.0mum) can be used in SOI waveguide due to the large index step between Si and SiO2, making them compatible with the VLSI technology. The design and fabrication of multimode interference (MMI) optical coupler, modulator and switche in SOI technology are presented in the paper. The results demonstrated that the modulator has an extinction ratio of -11.0dB and excess loss of -2.5dB, while the optical switch has a crosstalk of -12.5dB and responding time of less than 20 mus.

Electrolummescence from (5)Do -> F-7(J) and D-5(1) -> F-7(J) (J=0-4) transitions with a europium complex as emitter

Electroluminescence (EL) devices with Eu(HTH)(3)phen [HTH: 4,4,5,5,6,6,6-heptafluoro-1-(2-thienyl)-1,3-hexanedione, phen: I 10-phenanthroline] as an emissive centre were fabricated using vacuum evaporation. In addition to the Eu3+ 5D0 --> F-7(J) (J = 0-4) lines that were visible in the photoluminescence signal, the device also showed strong emission from the D-5(1) --> F-7(J) (J = 0-4) transitions. The enhanced emission from the D-5(1) F-7(J) (J = 0-4) transitions was attributed to the increased excitation intensity in the EL device. The luminescence lifetimes of the 5 D, and 5 Do levels were measured to be 0.6 mus and 866 mus, respectively.

Oxadiazole-containing material with intense blue phosphorescence emission for organic light-emitting diodes

2-(2-hydroxyphenyl)-5-phenyl-1, 3, 4-oxadiazole (HOXD), characteristic of excited state intramolecular proton-transfer (ESIPT), was synthesized and found to emit strong blue phosphorescence in the solid state at room temperature and at low temperature (77 K). The photoluminescent spectrum measurement in solution showed that there are two kinds of emission: fluorescence originated from the singlet state and phosphorescence derived from the triplet state in HOXD formed by ESIPT. For the photoluminescent spectrum in the solid state, only phosphorescence emission with the lifetime of 66 mus was observed. Multiple-layer light-emitting diodes with the configuration of ITO/NPB/HOXD/BCP/Alq(3)/Mg:Ag were fabricated using HOXD as emitter and the maximum brightness of 656 cd/m(2) and the luminous efficiency of 0.14 lm/W was obtained.