946 resultados para Corrugated waveguide


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One of the attractive features of sound synthesis by physical modeling is the potential to build acoustic-sounding digital instruments that offer more flexibility and different options in its design and control than their real-life counterparts. In order to develop such virtual-acoustic instruments, the models they are based on need to be fully parametric, i.e., all coefficients employed in the model are functions of physical parameters that are controlled either online or at the (offline) design stage. In this letter we show how propagation losses can be parametrically incorporated in digital waveguide string models with the use of zero-phase FIR filters. Starting from the simplest possible design in the form of a three-tap FIR filter, a higher-order FIR strategy is presented and discussed within the perspective of string sound synthesis with digital waveguide models.

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The quality factor of microwave resonators miniaturised by virtue of periodic loading is assessed. Five X-band resonators in E-plane technology with different miniaturisation factors have been designed to resonate at approximately the same frequency. The loaded quality factor is extracted from the fractional bandwidth and subsequently employed to estimate the unloaded quality factor. The study reveals that the unloaded quality factor drops approximately linearly with the miniaturisation. Subsequently design guidelines for E-plane filters with periodically loaded resonators are provided by means of an example involving a fifth-order filter. Full-wave simulated and experimental results are presented to validate the study.

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Novel V-band substrate integrated waveguide (SIW) filters have been presented. Design procedures for the filters synthesis and mechanisms providing quasi-elliptic response have been explained. The insertion loss of the filters has been measured below 2 dB with microstrip-to-SIW transitions being included.

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Finite conductivity in superconductors is taken into account by approximate boundary conditions imposed directly when deriving pair summatory equations, which are solved using the Galerkin method and the basis describing the edge singularity.

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A rectangular waveguide-to-microstrip transition operating at G-band is presented. The E-plane probe, used in the transition, is fabricated on semi-insulating gallium arsenide (SI-GaAs) and it is elevated on the substrate. This configuration reduces interaction with semiconductor material. The elevated probe is suitable for direct integration with monolithic microwave integrated circuits. Measured results show S11 better than 210dB between 150 and 200 GHz and S21 ¼ 2 4dB at centre band (180GHz) for two transitions in back-to-back configuration.

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A new type of one-dimensional leaky-wave antenna (LWA) with independent control of the beam-pointing angle and beamwidth is presented. The antenna is based on a simple structure composed of a bulk parallel-plate waveguide (PPW) loaded with two printed circuit boards (PCBs), each one consisting of an array of printed dipoles. One PCB acts as a partially reflective surface (PRS), and the other grounded PCB behaves as a high impedance surface (HIS). It is shown that an independent control of the leaky-mode phase and leakage rate can be achieved by changing the lengths of the PRS and HIS dipoles, thus resulting in a flexible adjustment of the LWA pointing direction and directivity. The leaky-mode dispersion curves are obtained with a simple Transverse Equivalent Network (TEN), and they are validated with three-dimensional full-wave simulations. Experimental results on fabricated prototypes operating at 15 GHz are reported, demonstrating the versatile and independent control of the LWA performance by changing the PRS and HIS parameters.

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This paper proposes a substrate integrated waveguide
(SIW) cavity-based method that is compliant with
ground-signal–ground (GSG) probing technology for dielectric
characterization of printed circuit board materials at millimeter
wavelengths. This paper presents the theory necessary to retrieve
dielectric parameters from the resonant characteristics of SIW
cavities with particular attention placed on the coupling scheme
and means for obtaining the unloaded resonant frequency. Different
sets of samples are designed and measured to address the
influence of the manufacturing process on the method. Material
parameters are extracted at - and -band from measured data
with the effect of surface roughness of the circuit metallization
taken into account.