Pulsed rf magnetron sputtered alumina thin films

Alumina thin films were deposited on titanium (Ti) and fused quartz by both direct and reactive pulsed rf magnetron sputtering techniques. X-ray diffraction, field emission scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy were utilized to study the phases and surface morphology of the films. The as-deposited alumina thin films were amorphous. However, after annealing at 500 degrees C in vacuum, the crystalline peaks corresponding to the Theta (0), Delta (8) and Chi ()) alumina phases were obtained. The optical transmittance and reflectance as well as IR emittanc,e data were also evaluated for the thin films. The transmittance, e.g., (similar to 90%) of the bare quartz substrate was not changed even when the alumina thin films were deposited for an hour. However, further increase in deposition time (e.g., 7 h) of the alumina thin films showed only a marginal decrease (e.g., similar to 5%) in average transmittance of the bare quartz substrate. The direct and indirect optical band gaps and extinction coefficient of the alumina films were estimated from the transmittance spectra. The IR emittance of the Ti substrate (e.g., similar to 16%) was almost constant after depositing alumina thin films for an hour. Further increase in deposition time showed only a marginal increase (e.g., similar to 9%) in IR emittance value. Therefore, it is proposed that the alumina films developed in the present work can act as a protective cover for the Ti substrate while retaining the thermo-optical properties of the same. The nanohardness and Young's modulus of the alumina thin films were evaluated by the novel nanoindentation technique. The nanohardness was measured as similar to 6 GPa. Further, Young's modulus was evaluated as similar to 116 GPa. The magnitudes of the nanomechanical properties of the thin films were a little smaller than those reported in the literature. This was linked to the lack of crystalline phases in the as-deposited alumina thin films. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Suppression of grain boundary relaxation in Zr-doped BiFeO3 thin films

Here, we present the results of temperature dependent dielectric studies on chemical solution processed Zr-doped BiFeO3 (BFO) thin films deposited on Pt/Si substrates. We find that in contrast to the undoped BFO films, Zr doping at Fe-site suppresses the low frequency dielectric relaxation originating from the grain boundaries, attributed to the increased dipolar rigidity due to stronger Zr-O bonds. Temperature dependent dc conductivity obtained from impedance and modulus analyses shows two distinct conduction processes occurring inside the grains. At temperature below similar to 423K, conductivity is nearly temperature independent, while in the high temperature regime (above similar to 423K), conduction is governed by the long range movement of oxygen vacancies with an activation energy of similar to 1eV. (C) 2014 AIP Publishing LLC.

Effect of post-deposition annealing on composition and electrical properties of dc reactive magnetron sputtered Al2O3 thin films

We have investigated the effect of post- deposition annealing on the composition and electrical properties of alumina (Al2O3) thin films. Al2O3 were deposited on n-type Si < 100 >. substrates by dc reactive magnetron sputtering. The films were subjected to post- deposition annealing at 623, 823 and 1023 K in vacuum. X-ray photoelectron spectroscopy results revealed that the composition improved with post- deposition annealing, and the film annealed at 1023 K became stoichiometric with an O/Al atomic ratio of 1.49. Al/Al2O3/Si metal-oxide-semiconductor (MOS) structures were then fabricated, and a correlation between the dielectric constant epsilon(r) and interface charge density Q(i) with annealing conditions were studied. The dielectric constant of the Al2O3 thin films increased to 9.8 with post- deposition annealing matching the bulk value, whereas the oxide charge density decreased to 3.11 x 10(11) cm(-2.) Studies on current-voltage IV characteristics indicated ohmic and Schottky type of conduction at lower electric fields (<0.16 MV cm(-1)) and space charge limited conduction at higher electric fields.

Healing time for the growth of thin films on patterned substrates

The healing times for the growth of thin films on patterned substrates are studied using simulations of two discrete models of surface growth: the Family model and the Das Sarma-Tamborenea (DT) model. The healing time, defined as the time at which the characteristics of the growing interface are ``healed'' to those obtained in growth on a flat substrate, is determined via the study of the nearest-neighbor height difference correlation function. Two different initial patterns are considered in this work: a relatively smooth tent-shaped triangular substrate and an atomically rough substrate with singlesite pillars or grooves. We find that the healing time of the Family and DT models on aL x L triangular substrate is proportional to L-z, where z is the dynamical exponent of the models. For the Family model, we also analyze theoretically, using a continuum description based on the linear Edwards-Wilkinson equation, the time evolution of the nearest-neighbor height difference correlation function in this system. The correlation functions obtained from continuum theory and simulation are found to be consistent with each other for the relatively smooth triangular substrate. For substrates with periodic and random distributions of pillars or grooves of varying size, the healing time is found to increase linearly with the height (depth) of pillars (grooves). We show explicitly that the simulation data for the Family model grown on a substrate with pillars or grooves do not agree with results of a calculation based on the continuum Edwards-Wilkinson equation. This result implies that a continuum description does not work when the initial pattern is atomically rough. The observed dependence of the healing time on the substrate size and the initial height (depth) of pillars (grooves) can be understood from the details of the diffusion rule of the atomistic model. The healing time of both models for pillars is larger than that for grooves with depth equal to the height of the pillars. The calculated healing time for both Family and DT models is found to depend on how the pillars and grooves are distributed over the substrate. (C) 2014 Elsevier B.V. All rights reserved.

Influence of film thickness on the properties of sprayed ZnO thin films for gas sensor applications

Transparent conducting ZnO films were prepared at substrate temperature 400 degrees C with different film thicknesses by nebulizer spray pyrolysis method on glass substrates. XRD studies reveal that the films are polycrystalline in nature having hexagonal crystal structure with preferred grain orientations along (0 0 2) and (1 0 1) directions. The crystallite size increases along (0 0 2) plane with the thickness increase and attains a maximum 109 nm for 913 nm film thickness. Analysis of structural parameters indicates that the films having thickness 913 nm are found to have minimum dislocation density and strain values. The HRSEM measurements show that the surface morphology of the films also changes with film thickness. EDAX estimates the average atomic percentage ratio of Zn and O in the ZnO films. Optical studies reveal the band gap energy decrease from 3.27 to 3.14 eV with increase of film thickness. Room temperature PL spectra show the near-band-edge emission and deep-level emission due to the presence of defects in the ZnO thin films. Impedance spectroscopy analysis indicates that grain boundary resistance decreases with the increasing ammonia concentration up to 500 ppm and the maximum sensitivity is found to be 1.7 for 500 ppm of ammonia. (C) 2014 Elsevier Ltd. All rights reserved.

Solution Processed Cu2CoSnS4 Thin Films for Photovoltaic Applications

Earth abundant alternative chalcopyrite Cu2CoSnS4 (CCTS) thin films were deposited by a facile sol-gel process onto larger substrates. Temperature dependence of the process control of deposition and desired phase formations was studied in detail. Films were analyzed for complete transformation from amorphous to polycrystalline, with textured structures for stannite phase, as reflected from the X-ray diffraction and with nearly stoichiometric compositions of Cu:Co:Sn:S = 2:0:1:0:1:0:4:0 from EDAX analysis. Morphological investigations revealed that the CCTS films with larger grains, on the order of its thickness, were synthesized at higher temperature of 500 degrees C. The optimal band gap for application in photovoltaics was estimated to be 1.4 eV. Devices with SLG/CCTS/Al geometry were fabricated for real time demonstration of photoconductivity under A.M 1.5 G solar and 1064 rim infrared laser illuminations. A photodetector showed one order current amplification from similar to 1.9 X 10(-6) A in the dark to 2.2 x 10(-5) A and 9.8 X 10(-6) A under A.M 1.5 G illumination and 50 mW cm(-2) IR laser, respectively. Detector sensitivity, responsivity, external quantum efficiency, and gain were estimated as 4.2, 0.12 A/W, 14.74% and 14.77%, respectively, at 50 mW cm(-2) laser illuminations. An ON and OFF ratio of 2.5 proved that CCTS can be considered as a potential absorber in low cost photovoltaics applications.

Effect of contact stresses on shape recovery of NiTiCu thin films

Permanent plastic deformation induced by mechanical contacts affects the shape recovery of shape memory alloys. To understand the shape recovery of NiTiCu thin films subjected to local contact stresses, systematic investigations are carried out by inducing varying levels of contact stresses using nanoindentation. The resulting indents are located precisely for imaging using a predetermined array consisting of different sized indents. Morphology and topography of these indents before and after shape recovery are characterized using Scanning Electron Microscope and Atomic Force Microscope quantitatively. Shape recovery is found to be dependent on the contact stresses at the low loads while the recovery ratio remains constant at 0.13 for higher loads. Shape recovery is found to occur mainly in depth direction of the indent, while far field residual stresses play very little role in the recovery. (C) 2014 Elsevier B.V. All rights reserved.

Tailoring the Microstructural, Optical, and Electrical Properties of Nanocrystalline WO3 Thin Films Using Al Doping

We have studied the influence of Al doping on the microstructural, optical, and electrical properties of spray-deposited WO3 thin films. XRD analyses confirm that all the films are of polycrystalline WO3 in nature, possessing monoclinic structure. EDX profiles of the Al-doped films show aluminum peaks implying incorporation of Al ions into WO3 lattice. On Al doping, the average crystallite size decreases due to increase in the density of nucleation centers at the time of film growth. The observed variation in the lattice parameter values on Al doping is attributed to the incorporation of Al ions into WO3 lattice. Enhancement in the direct optical band gap compared to the undoped film has been observed on Al doping due to decrease in the width of allowed energy states near the conduction band edge. The refractive indices of the films follow the Cauchy relation of normal dispersion. Electrical resistivity compared to the undoped film has been found to increase on Al doping.

Conductivity noise study of the insulator-metal transition and phase coexistence in epitaxial samarium nickelate thin films

Interaction between the lattice and the orbital degrees of freedom not only makes rare-earth nickelates unusually ``bad metal,'' but also introduces a temperature-driven insulator-metal phase transition. Here we investigate this insulator-metal phase transition in thin films of SmNiO3 using the slow time-dependent fluctuations (noise) in resistivity. The normalized magnitude of noise is found to be extremely large, being nearly eight orders of magnitude higher than thin films of common disordered metallic systems, and indicates electrical conduction via classical percolation in a spatially inhomogeneous medium. The higher-order statistics of the fluctuations indicate a strong non-Gaussian component of noise close to the transition, attributing the inhomogeneity to the coexistence of the metallic and insulating phases. Our experiment offers insight into the impact of lattice-orbital coupling on the microscopic mechanism of electron transport in the rare-earth nickelates.

Effect of film thickness and annealing on optical properties of TiO2 thin films and electrical characterization of MOS capacitors

Titanium dioxide (TiO2) thin films were deposited on glass and silicon (100) substrates by the sol-gel method. The influence of film thickness and annealing temperature on optical transmittance/reflectance of TiO2 films was studied. TiO2 films were used to fabricate metal-oxide-semiconductor capacitors. The capacitance-voltage (C-V), dissipation-voltage (D-V) and current-voltage (I-V) characteristics were studied at different annealing temperatures and the dielectric constant, current density and resistivity were estimated. The loss tangent (dissipation) increased with increase of annealing temperature.

Evidence of Low Field Magnetoimpedance Effect in (111) Oriented Fe3O4 Thin Films

Thin film of Fe3O4 is grown on (100) oriented GaAs substrate using pulsed laser deposition (PLD). The films were found to be (111) oriented. They were characterized morphologically as well as magnetically. They show Verwey transition at 120 K with the coercivity of 220 Oe at room temperature. These films were found to show magnetoimpedance effect with the ac magnetoresistance (MRac) of the order of similar to -6% at 10 MHz, at room temperature. The MRac was found to increase in low field-low frequency regime and decrease in low field high frequency regime.

Enhancement in threshold voltage with thickness in memory switch fabricated using GeSe1.5S0.5 thin films

Investigations on the electrical switching, structural, optical and photoacoustic analysis have been undertaken on chalcogenide GeSe1.5S0.5 thin films of various thicknesses prepared by vacuum evaporation technique. The decrease of band gap energy with increase in film thickness has been explained using the `density of states model'. The structural units of the films are characterized using Raman spectroscopy and the deconvoluted Raman peaks obtained from Gaussian fit around 188 cm(-1), 204 cm(-1) and 214 cm(-1) favors Ge-chalcogen tetrahedral units forming corner and edge sharing tetrahedra. All the thin films samples have been exhibited memory-type electrical switching behavior. An enhancement in the threshold voltages of GeSe1.5S0.5 thin films have been observed with increase in film thickness. The thickness dependence of switching voltages provide an insight into the switching mechanism and it is explained by the Joule heating effect. (C) 2014 Elsevier B.V. All rights reserved.

Low temperature sulfurization of electrodeposited Cu(In,Al)Se-2 thin films

Sulfurization of Cu(In,Al)Se-2 films is carried out in an indigenously made set up at moderately low temperature. The films are sulfurized for different time durations of 15, 30, 45 and 60 min at 150 degrees C. InSe and Cu2S phases occurred in the films during the initial stage of sulfurization along with Cu(In,Al)(Se,S)(2) phase. The compositional analysis shows that the sulfur incorporation is saturated after 30 min. Crystallinity increased with the increase in sulfurization time. The band gap of the Cu(In,Al)Se-2 film increased up to 1.35 eV with the addition of sulfur. Single phase Cu(In,Al)(Se,S)(2) with high crystallinity is obtained after 60 min of sulfurization. (C) 2014 Elsevier B.V. All rights reserved.

Optical and structural properties of highly porous shell structured Fe doped TiO2 thin films

TiO2 thin films with 0.2 wt%, 0.4 wt%, 0.6 wt%, and 0.8 wt% Fe were prepared on glass and silicon substrates using sol-gel spin coating technique. The optical cut-off points are increasingly red-shifted and the absorption edge is shifted over the higher wavelength region with Fe content increasing. As Fe content increases, the optical band gap decreases from 3.03 to 2.48 eV whereas the tail width increases from 0.26 to 1.43 eV. The X-ray diffraction (XRD) patterns for doped films at 0.2 wt% and 0.8 wt% Fe reveal no characteristic peaks, indicating that the film is amorphous whereas undoped TiO2 exhibits (101) orientation with anatase phase. Thin films of higher Fe content exhibit a homogeneous, uniform, and nano-structured highly porous shell morphology.

Probing a spin-glass state in SrRuO3 thin films through higher-order statistics of resistance fluctuations

The complex perovskite oxide SrRuO3 shows intriguing transport properties at low temperatures due to the interplay of spin, charge, and orbital degrees of freedom. One of the open questions in this system is regarding the origin and nature of the low-temperature glassy state. In this paper we report on measurements of higher-order statistics of resistance fluctuations performed in epitaxial thin films of SrRuO3 to probe this issue. We observe large low-frequency non-Gaussian resistance fluctuations over a certain temperature range. Our observations are compatible with that of a spin-glass system with properties described by hierarchical dynamics rather than with that of a simple ferromagnet with a large coercivity.