One-step digit-set-restricted modified signed-digit adder using an incoherent correlator based on a shared content-addressable memory

An efficient one-step digit-set-restricted modified signed-digit (MSD) adder based on symbolic substitution is presented. In this technique, carry propagation is avoided by introducing reference digits to restrict the intermediate carry and sum digits to {1,0} and {0,1}, respectively. The proposed technique requires significantly fewer minterms and simplifies system complexity compared to the reported one-step MSD addition techniques. An incoherent correlator based on an optoelectronic shared content-addressable memory processor is suggested to perform the addition operation. In this technique, only one set of minterms needs to be stored, independent of the operand length. (C) 2002 society or Photo-Optical Instrumentation Engineers.

Efficient two-step digit-set-restricted modified signed-digit algorithm based on optoelectronic shared content-addressable memory

A two-step digit-set-restricted modified signed-digit (MSD) adder based on symbolic substitution is presented. In the proposed addition algorithm, carry propagation is avoided by using reference digits to restrict the intermediate MSD carry and sum digits into {(1) over bar ,0} and {0, 1}, respectively. The algorithm requires only 12 minterms to generate the final results, and no complementarity operations for nonzero outputs are involved, which simplifies the system complexity significantly. An optoelectronic shared content-addressable memory based on an incoherent correlator is used for experimental demonstration. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Efficient two-step digit-set-restricted modified signed-digit algorithm based on optoelectronic shared content-addressable memory

A two-step digit-set-restricted modified signed-digit (MSD) adder based on symbolic substitution is presented. In the proposed addition algorithm, carry propagation is avoided by using reference digits to restrict the intermediate MSD carry and sum digits into {(1) over bar ,0} and {0, 1}, respectively. The algorithm requires only 12 minterms to generate the final results, and no complementarity operations for nonzero outputs are involved, which simplifies the system complexity significantly. An optoelectronic shared content-addressable memory based on an incoherent correlator is used for experimental demonstration. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Autophagic Marker MAP1LC3B Expression Levels Are Associated with Carotid Atherosclerosis Symptomatology

Objectives: The mechanism by which atheroma plaque becomes unstable is not completely understood to date but analysis of differentially expressed genes in stable versus unstable plaques may provide clues. This will be crucial toward disclosing the mechanistic basis of plaque instability, and may help to identify prognostic biomarkers for ischaemic events. The objective of our study was to identify differences in expression levels of 59 selected genes between symptomatic patients (unstable plaques) and asymptomatic patients (stable plaques). Methods: 80 carotid plaques obtained by carotid endarterectomy and classified as symptomatic (>70% stenosis) or asymptomatic (>80% stenosis) were used in this study. The expression levels of 59 genes were quantified by qPCR on RNA extracted from the carotid plaques obtained by endarterectomy and analyzed by means of various bioinformatic tools. Results: Several genes associated with autophagy pathways displayed differential expression levels between asymptomatic and symptomatic (i.e. MAP1LC3B, RAB24, EVA1A). In particular, mRNA levels of MAP1LC3B, an autophagic marker, showed a 5-fold decrease in symptomatic samples, which was confirmed in protein blots. Immune system-related factors and endoplasmic reticulum-associated markers (i.e. ERP27, ITPR1, ERO1LB, TIMP1, IL12B) emerged as differently expressed genes between asymptomatic and symptomatic patients. Conclusions: Carotid atherosclerotic plaques in which MAP1LC3B is underexpressed would not be able to benefit from MAP1LC3B-associated autophagy. This may lead to accumulation of dead cells at lesion site with subsequent plaque destabilization leading to cerebrovascular events. Identified biomarkers and network interactions may represent novel targets for development of treatments against plaque destabilization and thus for the prevention of cerebrovascular events.

Read-only memory disk with AgOx and AgInSbTe superresolution mask layer

Two novel read-only memory (ROM) disks, one with an AgOx mask layer and the other with an AgInSbTe mask layer, are proposed and studied. The AgOx and the AgInSbTe films sputtered on the premastered substrates with pit depths of 50 nm and pit lengths (space) of 380 nm are studied by atomic force microscopy. Disk readout measurement is carried out using a dynamic setup with a laser wavelength of 632.8 nm and an object lens numerical aperture (NA) of 0.40. Results show that the superresolution effect happens only at a suitable oxygen flow ratio for the AgOx ROM disk. The best superresolution readout effect is achieved at an oxygen flow ratio of 0.5 with the smoothest film surface. Compared with the AgOx ROM disk, the AgInSbTe ROM disk has a much smoother film surface and better superresolution effect. A carrier-to-noise ratio (CNR) of above 40 dB can be obtained at an appropriate readout power and readout velocity. The readout CNR of both the AgOx and AgInSbTe ROM disks have a nonlinear dependence on the readout power. The superresolution readout mechanisms for these ROM disks are analyzed and compared as well. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Read-only memory disk with AgOx super-resolution mask layer

A novel read-only memory (ROM) disk with an AgOx mask layer was proposed and studied in this letter. The AgOx films sputtered on the premastered substrates, with pits depth of 50 nm and pits length of 380 nm, were studied by an atomic force microscopy. The transmittances of these AgOx films were also measured by a spectrophotometer. Disk measurement was carried out by a dynamic setup with a laser wavelength of 632.8 nm and a lens numerical aperture (NA) of 0.40. The readout resolution limit of this setup was λ/(4NA) (400 nm). Results showed that the super-resolution readout happened only when the oxygen flow ratios were at suitable values for these disks. The best super-resolution performance was achieved at the oxygen flow ratio of 0.5 with the smoothest film surface. The super-resolution readout mechanism of these ROM disks was analyzed as well.

Read-only memory disk with AgOx and AgInSbTe superresolution mask layer

Two novel read-only memory (ROM) disks, one with an AgOx mask layer and the other with an AgInSbTe mask layer, are proposed and studied. The AgOx and the AgInSbTe films sputtered on the premastered substrates with pit depths of 50 nm and pit lengths (space) of 380 nm are studied by atomic force microscopy. Disk readout measurement is carried out using a dynamic setup with a laser wavelength of 632.8 nm and an object lens numerical aperture (NA) of 0.40. Results show that the superresolution effect happens only at a suitable oxygen flow ratio for the AgOx ROM disk. The best superresolution readout effect is achieved at an oxygen flow ratio of 0.5 with the smoothest film surface. Compared with the AgOx ROM disk, the AgInSbTe ROM disk has a much smoother film surface and better superresolution effect. A carrier-to-noise ratio (CNR) of above 40 dB can be obtained at an appropriate readout power and readout velocity. The readout CNR of both the AgOx and AgInSbTe ROM disks have a nonlinear dependence on the readout power. The superresolution readout mechanisms for these ROM disks are analyzed and compared as well. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials

The dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials in crystalline and amorphous states on temperature was measured and analyzed. The results show that in the crystalline state, the thermal properties monotonically decrease with the temperature and present obvious crystalline semiconductor characteristics. The heat capacity, thermal diffusivity, and thermal conductivity decrease from 0.35 J/g K, 1.85 mm(2)/s, and 4.0 W/m K at 300 K to 0.025 J/g K, 1.475 mm(2)/s, and 0.25 W/m K at 600 K, respectively. In the amorphous state, while the dependence of thermal properties on temperature does not present significant changes, the materials retain the glass-like thermal characteristics. Within the temperature range from 320 K to 440 K, the heat capacity fluctuates between 0.27 J/g K and 0.075 J/g K, the thermal diffusivity basically maintains at 0.525 mm(2)/s, and the thermal conductivity decreases from 1.02 W/m K at 320 K to 0.2 W/m K at 440 K. Whether in the crystalline or amorphous state, Ag8In14Sb55Te23 are more thermally active than Ge2Sb2Te5, that is, the Ag8In14Sb55Te23 composites bear stronger thermal conduction and diffusion than the Ge2Sb2Te5 phase-change memory materials.

Birth Weight, Working Memory and Epigenetic Signatures in IGF2 and Related Genes: A MZ Twin Study

Neurodevelopmental disruptions caused by obstetric complications play a role in the etiology of several phenotypes associated with neuropsychiatric diseases and cognitive dysfunctions. Importantly, it has been noticed that epigenetic processes occurring early in life may mediate these associations. Here, DNA methylation signatures at IGF2 (insulin-like growth factor 2) and IGF2BP1-3 (IGF2-binding proteins 1-3) were examined in a sample consisting of 34 adult monozygotic (MZ) twins informative for obstetric complications and cognitive performance. Multivariate linear regression analysis of twin data was implemented to test for associations between methylation levels and both birth weight (BW) and adult working memory (WM) performance. Familial and unique environmental factors underlying these potential relationships were evaluated. A link was detected between DNA methylation levels of two CpG sites in the IGF2BP1 gene and both BW and adult WM performance. The BW-IGF2BP1 methylation association seemed due to non-shared environmental factors influencing BW, whereas the WM-IGF2BP1 methylation relationship seemed mediated by both genes and environment. Our data is in agreement with previous evidence indicating that DNA methylation status may be related to prenatal stress and later neurocognitive phenotypes. While former reports independently detected associations between DNA methylation and either BW or WM, current results suggest that these relationships are not confounded by each other.