Codoping Na+ to modulate the spectroscopy and photoluminescence properties of Yb3+ in CaF2 laser crystal

kinds of Yb3+- and Na+-codoped CaF2 laser crystal with different Na:Yb ratios of 0, 1.5, and 10 are grown by the temperature gradient technique. Room-temperature absorption, photoluminescence spectra, and fluorescence lifetimes belonging to the transitions between ground state F-2(7/2) and excited state F-2(5/2) of Yb3+ ions in the three crystals are measured to study the effect of Na+. Experimental results show that codoping Na+ ions in different Na:Yb ratios can modulate the spectroscopy and photoluminescence properties of Yb3+ ions in a CaF2 lattice in a large scope. (c) 2005 Optical Society of America

飞秒激光辐照K9玻璃引起的暗化和折射率变化

对不同辐照条件下近红外飞秒激光在K9玻璃内部诱导产生的暗化现象和永久性折射率改变进行了实验研究。通过辐照前后的显微镜图片、吸收光谱、电子自旋共振谱(ESR)以及激光衍射实验，分析了K9玻璃中暗化现象产生的微观过程，发现暗化是由诱导产生的空穴型色心引起的。暗化程度和折射率改变随激光强度、扫描速度、扫描行间距变化而变化。光致色心的形成与非线性电离有关。对折射率永久性改变进行了简单说明，其机理仍在探索中。

Sites structure and spectroscopic properties of Yb-doped and Yb, Na-codoped CaF2 laser crystals

For the first time, the effect of Na+ on crystal structure, valence state of Yb ions, spectroscopic properties of YbF3-doped CaF2 system was systematically studied. Na+ can greatly suppress the deoxidization of Yb3+ to Yb2+. Absorption and emission spectra showed codoping Na+ with different Na:Yb ratios can modulate the spectroscopy and photoluminescence properties of Yb3+ ions in CaF2 lattice in a large scope. The emission lifetime and quantum efficiency of Yb3+ in CaF2 were greatly enhanced by the codopant of Na+. The potential laser performances of the new Yb, Na-codoped CaF2 crystals were predicted. (c) 2005 Elsevier B.V. All rights reserved.

Photoreduction of Ag+ in aluminoborate glasses induced by irradiation of a femtosecond laser

We report on photoreduction of Ag+ in aluminoborate glasses induced by irradiation of a femtosecond laser. Novel fluorescence was observed in the femtosecond laser irradiated glass when excited by a 365 nm ultraviolet lamp. Optical absorption, emission, and electron spin resonance spectra of the glass samples demonstrated that after the laser irradiation, portions of silver ions near the focused part of the laser beam inside the glass were reduced to silver atoms, which resulted in the formation of the characteristic fluorescence. The observed phenomenon may have promising applications in the fabrication of functional optical devices.

飞秒激光脉冲照射诱导含芴结构树脂共聚物结构变化及机理的研究

在室温下用聚焦的飞秒激光照射高折射率、低双折射的透明含芴结构树脂-对苯二甲酸乙二醇酯(PET)共聚物，探索飞秒激光制备高分子光学功能微结构的可能性。通过紫外-可见吸收光谱、红外光谱、电子自旋共振谱、光学显微镜、扫描电镜及透射电镜等分析手段，对该材料在飞秒激光照射后的结构变化及机理进行研究。结果发现：含芴结构树脂共聚物在飞秒激光照射后产生化学键断裂，生成未成对电子，并形成无定形碳；照射区在可见光区域的吸收增强；随激光能量密度的减少在激光会聚点附近诱导结构由慧尾状向单一细丝转变。演示了三维着色内雕。

Dehydration for a solid coordination network based on CuII-(py)2C(OH)2 trimers

Abstract de congreso: Póster presentado en 12th International Conference on Materials Chemistry (MC12), 20 - 23 July 2015, York, United Kingdom

利用DSC和EPR技术研究杜仲种子的贮藏条件

种子贮藏稳定性对于种质资源的长期保存具有重要意义，目前关于种子贮藏的最新理论为玻璃态理论，该理论认为种子的玻璃化有利于种子的长期贮藏。当种子处于玻璃态时，玻璃化物质的高度粘滞性降低了种子细胞内分子流动性，阻止了细胞质中分子的扩散，从而减少老化过程中细胞结构的损伤和化学组分的变化，延缓种子老化劣变反应速率，延长贮藏寿命。评价玻璃态的一个重要指标是玻璃化转变温度，当种子贮藏于玻璃化温度或以下10℃～30℃范围内时，种子具有最佳的贮藏稳定性。因此，检测种子的玻璃化转变温度对于种子的长期有效贮藏具有重要指导意义。 本研究将差示量热扫描技术（DSC）与电子顺磁共振波谱仪技术（EPR）应用于杜仲种子玻璃化转变温度方面的研究。在DSC方法中，选用4.4%～31.6%含水量范围的杜仲种胚分别进行了DSC图谱扫描。EPR方法选用3-羧基-2,2,5,5-四甲基吡咯烷-1-氧（3-carboxy-2,2,5,5-tetramethylpyrrolidine-1-oxyl，CP）和2,2,6,6-四甲基哌啶（4-hydroxy-2,2,6,6-tetramethyl-1-piperidinyloxy，TEMPO）作为探针标记杜仲种胚， 利用EPR技术测定不同含水量杜仲种胚的分子运动，通过对EPR图谱参数的分析计算，最终确定不同含水量杜仲种胚的玻璃化转变温度。 DSC实验结果显示，含水量为22.3%、28.0%、31.6%的杜仲种胚在0℃ 左右出现了一个水的熔融峰。该熔融峰的面积代表了自由水含量的多少，随着种胚含水量的降低该熔融峰面积减小。4.4%～31.6%含水量范围的杜仲种胚在-28℃左右还出现了一个熔融峰，推测此峰为杜仲种胚中某类物质熔融所形成的熔融峰。然而在此曲线上我们未观察到标志玻璃化转变的“台阶”出现。 CP-EPR实验的结果表明，利用EPR测定得到含水量为4.4%～11.6%的杜仲种胚在-110℃～20℃温度范围内，同一含水量的杜仲种胚随着温度的升高，分子运动速率加快;在同一温度条件下，高含水量的种胚比低含水量种胚的分子运动速率快。通过CP-EPR波谱两外缘峰最大距离（2Azz）的测定和数据统计分析，得到含水量为4.4%、5.7%、8.6%、10.3%、11.6%杜仲种胚的玻璃化转变温度分别约为44℃、25℃、4℃、-31℃、-43℃。可以把测定的杜仲种胚的这几个含水量的玻璃化转变温度与杜仲种子贮藏相结合，用于指导杜仲种子的贮藏。 TEMPO-EPR实验测定分析得到含水量为2.1%、3.4%、4.8%、8.3%、11.2% 的杜仲种胚的玻璃化转变温度分别为-21℃、-18℃、-24℃、-20℃、-27℃，玻璃化转变温度随含水量升高其变化的规律不明显，这与CP-EPR实验测得的结果有着较明显的差别。通过分析，认为对于脂质含量较高的杜仲种胚，随着含水量的降低，作为标记化合物的TEMPO随着脱水进入脂相，从而不能真实反映出不同含水量种胚的分子运动情况。与TEMPO标记相比，CP标记可能能够更真实地反映不同含水量杜仲种胚细胞质分子运动的情况，根据其分子运动情况得到的玻璃化转变温度更准确。

Transmission properties through a double quantum dot with a wave packet

The transmiss on time and tunneling probability of an electron through a double quantum dot are studied using the transfer matrix technique. The time-dependent Schrodinger equation is applied for a Gaussian wave packet passing through the double quantum clot. The numerical calculations are carried out for a double quantum clot consisting of GaAs/InAs material. We find that the electron tunneling resonance peaks split when the electron transmits through the double quantum dot. The splitting energy increases as the distance between the two quantum dots decreases. The transmission time can be elicited from the temporal evolution of the Gaussian wave packet in the double quantum dot. The transmission time increases quickly as the thickness of tire barrier increases. The lifetime of the resonance state is calculated tram the temporal evolution of the Gaussian-state at the centers of quantum dots.

Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation

In our work, nitrogen ions were implanted into separation-by-implantation-of-oxygen (SIMOX) wafers to improve the radiation hardness of the SIMOX material. The experiments of secondary ion mass spectroscopy (SIMS) analysis showed that some nitrogen ions were distributed in the buried oxide layers and some others were collected at the Si/SiO2 interface after annealing. The results of electron paramagnetic resonance (EPR) suggested the density of the defects in the nitrided samples changed with different nitrogen ion implantation energies. Semiconductor-insulator-semiconductor (SIS) capacitors were made on the materials, and capacitance-voltage (C-V) measurements were carried out to confirm the results. The super total dose radiation tolerance of the materials was verified by the small increase of the drain leakage current of the metal-oxide-semiconductor field effect transistor with n-channel (NMOSFETs) fabricated on the materials before and after total dose irradiation. The optimum implantation energy was also determined.

Synthesis and luminescence of ZnMgS : Mn2+ nanoparticles

Efficient green emission from ZnMgS:Mn2+ nanoparticles prepared by co-doping Mg2+ and Mn2+ ions into ZnS lattices has been observed. The synthesis is carried out in aqueous solution, followed by a post-annealing process, thus showing the features of less complexity, low cost, and easy incorporation of dopants. In comparison with the emission of ZnS:Mn2+ nanoparticles, which is located generally around 590 nm, the photoluminescence of ZnMgS:Mn2+ nanoparticles is blue-shifted by 14 nm in wavelength, leading to the enhanced green emission. The X-ray diffraction, electron spin resonance, and pressure dependent photoluminescence measurements suggest that the change of the crystal field caused by Mg2+ ionic doping and the lower symmetry in the nanoparticles may account for the blue-shift of the photoluminescence. The ZnMgS:Mn2+ nanoparticles with 1% Mn2+ doping exhibit the strongest luminescence, which could potentially meet the requirements for the construction of green light emitting diodes.

Rashba spin-orbit coupling in InSb nanowires under transverse electric field

We investigate the Rashba spin-orbit coupling brought by transverse electric field in InSb nanowires. In small k(z) (k(z) is the wave vector along the wire direction) range, the Rashba spin-orbit splitting energy has a linear relationship with k(z), so we can define a Rashba coefficient similarly to the quantum well case. We deduce some empirical formulas of the spin-orbit splitting energy and Rashba coefficient, and compare them with the effective-mass calculating results. It is interesting to find that the Rashba spin-orbit splitting energy decreases as k(z) increases when k(z) is large due to the k(z)-quadratic term in the band energy. The Rashba coefficient increases with increasing electric field, and shows a saturating trend when the electric field is large. As the radius increases, the Rashba coefficient increases at first, then decreases. The effects of magnetic fields along different directions are discussed. The case where the magnetic field is along the wire direction or the electric field direction are similar. The spin state in an energy band changes smoothly as k(z) changes. The case where the magnetic field is perpendicular to the wire direction and the electric field direction is quite different from the above two cases, the k(z)-positive and negative parts of the energy bands are not symmetrical, and the energy bands with different spins cross at a k(z)-nonzero point, where the spin splitting energy and the effective g factor are zero.

Research on nitrogen implantation energy dependence of the properties of SIMON materials

With different implantation energies, nitrogen ions were implanted into SIMOX wafers in our work. And then the wafers were subsequently annealed to form separated by implantation of oxygen and nitrogen (SIMON) wafers. Secondary ion mass spectroscopy (SIMS) was used to observe the distribution of nitrogen and oxygen in the wafers. The result of electron paramagnetic resonance (EPR) was suggested by the dandling bonds densities in the wafers changed with N ions implantation energies. SIMON-based SIS capacitors were made. The results of the C-V test confirmed that the energy of nitrogen implantation affects the properties of the wafers, and the optimum implantation energy was determined. (c) 2005 Elsevier B.V. All rights reserved.

ECR plasma in growth of cubic GaN by low pressure MOCVD

To heteroepitaxally grow the crystalline cubic-GaN (c-GaN) film on the substrates with large lattice mismatch is basically important for fabricating the blue or ultraviolet laser diodes based on cubic group III nitride materials. We have obtained the crystalline c-GaN film and the heteroepitaxial interface between c-Gan and GaAs (001) substrate by the ECR Plasma-Assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) under low-pressure and low-temperature (similar to600degreesC) on a homemade ECR-plasma Semiconductor Processing Device (ESPD). In order to decrease the growth temperature, the ECR plasma source was adopted as the activated nitrogen source, therefore the working pressure of MOCVD was decreased down to the region less than 1 Pa. To eliminate the damages from energetic ions of current plasma source, a Multi-cusp cavity,coupling ECR Plasma source (MEP) was selected to use in our experiment. To decrease the strain and dislocations induced from the large lattice mismatch between c-GaN and GaAs substrate, the plasma pretreatment procedure i.e., the initial growth technique was investigated The experiment arrangements, the characteristics of plasma and the growth procedure, the characteristics on-GaN film and interface between c-GaN and GaAs(001), and the roles of ECR plasma are described in this contribution.

Research on nitrogen implantation energy dependence of the properties of SIMON materials

With different implantation energies, nitrogen ions were implanted into SIMOX wafers in our work. And then the wafers were subsequently annealed to form separated by implantation of oxygen and nitrogen (SIMON) wafers. Secondary ion mass spectroscopy (SIMS) was used to observe the distribution of nitrogen and oxygen in the wafers. The result of electron paramagnetic resonance (EPR) was suggested by the dandling bonds densities in the wafers changed with N ions implantation energies. SIMON-based SIS capacitors were made. The results of the C-V test confirmed that the energy of nitrogen implantation affects the properties of the wafers, and the optimum implantation energy was determined. (c) 2005 Elsevier B.V. All rights reserved.

傅立叶变换离子回旋共振质谱在含糖小分子分析中的应用

傅立叶变换离子回旋共振质谱是一种近些年来逐渐发展起来的新型质谱仪器，由于该类质谱检测器的设计和检测原理与传统质谱有着根本的区别，通过它获取的数据具有高分辨和高质量测量精度的特点。通常，超过100000以上的分辨本领能够对质谱中非常临近的质谱峰进行区分，并结合串联质谱中的高质谱测量精度数据，可以给出明确的串联质谱碎裂途径。 本论文选择4对具有同分异构特点的二糖黄酮进行了系统研究，实验采取负离子模式的电喷雾傅立叶变换离子回旋共振质谱，结合持续非共振辐照碰撞诱导解离模式，对同分异构体的区分进行了研究。在实验过程中，建立了一种全新的质量校正方法，使得质谱测量平均误差小于1.00 ppm1。首次直接利用子离子的结构信息，确定了负离子模式下二糖黄酮的去质子化位点。实验中还发现，RDA解离途径仅仅当二糖黄酮的苷元是黄烷酮并且B环上没有过多的富电子基团的情况下才能发生，同时，具有α1→2糖连接的二糖黄酮在串联质谱中能够发生多键解离，并采用Gaussian 03 程序利用 B3LYP/6-31G方法对其进行了理论计算。为了进一步讨论α1→2糖连接二糖黄酮的串联质谱特点，在温和实验条件下，对上述化合物进行了氢氘交换实验。实验中首次发现温和条件下，黄酮的氢氘交换位点依赖于苷元结构，除了糖链上羟基和苷元上的酚羟基能够发生氢氘交换外，苷元为黄烷酮的二糖黄酮中，C（3）、C（6）和C（8）上的氢能够被直接交换掉，而苷元为黄酮骨架的二糖黄酮则在此位点不发生氢氘交换反应，并依据高质量测量精度数据对其子离子产生途径进行研究。 论文还系统研究了由葡萄糖缩合而成的二糖，4对二糖异构体负离子模式电喷雾傅立叶变换离子回旋共振质谱研究表明，其离子化过程中，生成的去质子化的二聚体是主要气相离子，依据单糖的实验和计算化学结果，论文中提出二糖化合物的离子化模型。计算化学的结果还证实，构成二聚体的单体直接具有强烈的相互作用，能够在串联质谱中产生共价键解离的子离子，而不是简单的单体解离。利用SORI CID还对二糖化合物的糖连接位点和糖苷键构型进行了区分研究。 论文的最后一部分研究了人工合成类肝素类化合物DHα、THα 和 THβ的结构表征，在极其温和的负离子模式电喷雾质谱条件下，类肝素化合物仍然容易发生多个SO3中性丢失。串联质谱中的子离子通过傅立叶变换离子回旋共振质谱高质量精度测量数据进行了确认。实验对研究类肝素类化合物的质谱表征提供了借鉴。