970 resultados para electron beam evaporation


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Cold cathodes based on carbon nanotubes allow to produce a modulated electron beam. Using an array of vertically aligned CNs that exhibit an aspect ratio of about 200, we demonstrated the modulation of a high current density beam (∼ 1 A/cm2) at 1.5 and 32 GHz frequencies. Such CN cathodes are very promising for their use in a new generation of compact, highly efficient and low cost amplifiers that operate between 10 and 100 GHz. © 2007 IEEE.

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Rapid and effective thermal processing methods using electron beams are described in this paper. Heating times ranging from a fraction of a second to several seconds and temperatures up to 1400°C are attainable. Applications such as the annealing of ion implanted material, both without significant dopant diffusion and with highly controlled diffusion of impurities, are described. The technique has been used successfully to activate source/drain regions for fine geometry NMOS transistors. It is shown that electron beams can produce localised heating of semiconductor substrates and a resolution of approximately 1 μm has been achieved. Electron beam heating has been applied to improving the crystalline quality of silicon-on sapphire used in CMOS device fabrication. Silicon layers with defect levels approaching bulk material have been obtained. Finally, the combination of isothermal and selective annealing is shown to have application in recrystallisation of polysilicon films on an insulating layer. The approach provides the opportunity of producing a silicon-on-insulator substrate with improved crystalline quality compared to silicon-on-sapphire at a potentially lower cost. It is suggested that rapid heating methods are expected to provide a real alternative to conventional furnace processing of semiconductor devices in the development of fabrication technology. © 1984 Benn electronics Publications Ltd, Luton.

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The enhanced emission performance of a graphene/Mo hybrid gate electrode integrated into a nanocarbon field emission micro-triode electron source is presented. Highly electron transparent gate electrodes are fabricated from chemical vapor deposited bilayer graphene transferred to Mo grids with experimental and simulated data, showing that liberated electrons efficiently traverse multi-layer graphene membranes with transparencies in excess of 50-68%. The graphene hybrid gates are shown to reduce the gate driving voltage by 1.1 kV, whilst increasing the electron transmission efficiency of the gate electrode significantly. Integrated intensity maps show that the electron beam angular dispersion is dramatically improved (87.9°) coupled with a 63% reduction in beam diameter. Impressive temporal stability is noted (<1.0%) with surprising negligible long-term damage to the graphene. A 34% increase in triode perveance and an amplification factor 7.6 times that of conventional refractory metal grid gate electrode-based triodes are noted, thus demonstrating the excellent stability and suitability of graphene gates in micro-triode electron sources. A nanocarbon field emission triode with a hybrid gate electrode is developed. The graphene/Mo gate shows a high electron transparency (50-68%) which results in a reduced turn-on potential, increased beam collimation, reduced beam diameter (63%), enhanced stability (<1% variation), a 34% increase in perveance, and an amplification 7.6 times that of equivalent conventional refractory metal gate triodes. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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The structural characteristics of gallium nitride (GaN) films grown on sapphire(0001) substrates by gas source molecular beam epitaxy (GSMBE) have been investigated using high-resolution synchrotron irradiation X-ray diffraction and cathodoluminescence with a variable energy electron beam. Besides the well-known GaN hexagonal structure, a small portion of cubic phase GaN was observed. The X-ray measurements provide an essential means for the structural identification of the GaN layers. Arising from the variable penetration depth of the electron beam in the cathodoluminescence measurements, it was found that the fraction of the GaN cubic-phase typically increased as the probing depth was increased. The results suggest that the GaN cubic phase is mostly located near the interface between the substrate and GaN layer due to the initial nucleation.

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A new generation electron cooler has started operation in the heavy ion synchrotron CSRm which is used to increase the intensity of heavy ions. Transverse cooling of the ion beam after horizontal multi-turn injection allows beam accumulation at the injection energy. After optimization of the accumulation process an intensity increase in a synchrotron pulse by more than one order of magnitude has been achieved. In given accumulation time interval of 10 seconds, 108particles have been accumulated and accelerated to the final energy. The momentum spread after accumulation and acceleration in the 10−4 range has been demonstrated in six species of ion beams. Primary measurements of accumulation process varying with electron energy,electron beam current, electron beam profile, expansion factor and injection interval have been performed.The lifetimes of ion beams in the presence of electron beams were roughly measured with the help of DCCT signal.

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Application of electron-cooling upgrades the quality of ion beams in the storage rings and brings new problems. The transverse magnetic field distorts the ion orbit while guiding the intense electron beam. The closed-orbit distortion should be and can be localized and controlled well inside the ring acceptance. This paper deals with the field in the e-cool section and concomitant COD of ion orbit and shows the correction scheme.

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The 400 MeV/u C-12(6+) ion beam was successfully cooled by the intensive electron beam near 1 A in CSRe. The momentum cooling time was estimated near 15 s. The cooling force was measured in the cases of different electron beam profiles, and the different angles between the ion beam and electron beam. The lifetime of the ion beam in CSRe was over 80 h. The dispersion in the cooling section was confirmed as positive close to zero. The beam sizes before cooling and after cooling were measured by the moving screen. The beam diameter after cooling was about 1 mm. The bunch length was measured with the help of the signals from the beam position monitor. The diffusion was studied in the absence of the electron beam.

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The electron impact ionization cross sections of hydrogen-like molybdenum ions were measured with an electron beam ion trap at the electron energies of 49.4, 64.4 and 79.6 keV The results are 2.82(22) x 10(-23), 3.13(29) x 10(-23) and 3.23(51) x 10(-23) cm(2), respectively. These results are compared with the experimental results measured previously. The agreement with the results obtained with, scaling formulae is also discussed.

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Electron-impact ionization cross sections have been determined for hydrogen like iron ions at selected electron energies between 1.45 and 4.3 times the threshold energy. The cross sections were obtained by measuring the equilibrium ionization balance in an electron beam ion trap. This ionization balance is obtained from x-ray measurements of radiative recombination into the K-shell of hydrogen-like and bare iron ions. The measured cross sections are compared with distorted-wave calculations and several semiempirical formulations.

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The conceptual design of a new electron beam ion trap primarily intended for the study of electron-ion interactions is outlined along with some preliminary predictions regarding its capabilities. (C) 2003 Elsevier Science B.V. All rights reserved.

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We have measured electron impact ionization cross-sections of hydrogen-like iron and hydrogen-like molybdenum with an electron beam ion trap. The measurements were performed in the electron energy range between 13.5 and 40 keV for hydrogen-like iron and between 50 and 80 keV for hydrogen-like molybdenum. (C) 2003 Elsevier Science B.V. All rights reserved.

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An electron beam ion trap ( EBIT) has been designed and is currently under construction for use in atomic physics experiments at the Queen's University, Belfast. In contrast to traditional EBITs where pairs of superconducting magnets are used, a pair of permanent magnets will be used to compress the electron beam. The permanent magnets have been designed in conjunction with bespoke vacuum ports to give unprecedented access for photon detection. Furthermore, the bespoke vacuum ports facillitate a versatile, reconfigurable trap structure able to accommodate various in-situ detectors and in-line charged particle analysers. Although the machine will have somewhat lower specifications than many existing EBITs in terms of beam current density, it is hoped that the unique features will facilitate a number of hitherto impossible studies involving interactions between electrons and highly charged ions. In this article the new machine's design is outlined along with some suggestions of the type of process to be studied once the construction is completed.

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The two-electron QED contributions to the ground-state binding energy of Kr34+ ions have been determined in two independent experiments performed with electron beam ion traps (EBIT) in Heidelberg (HD) and Tokyo (BT, Belfast-Tokyo collaboration). X rays arising from radiative recombination (RR) of free electrons to the ground state of initially bare Kr36+ and hydrogenlike Kr35+ ions were observed as a function of the interacting electron energy. The K edge absorption by thin Eu and W foils provided fixed photon energy references used to measure the difference in binding energy Delta E-2e between the H- and He-like Kr ions (Kr35+ and Kr34+, respectively). The two values agree well, yielding a final result of Delta E-2e=641.8 +/- 1.7 eV, confirming recent results of rigorous QED calculations. This accuracy is just of the order required to access screened radiative QED contributions.