Modelo de flujo en un acuífero volcánico : el Acuífero de la Aldea (Gran Canaria)

RESUMEN. Se ha llevado a cabo un modelo de flujo de aguas subterráneas en la desembocadura del Barranco de La Aldea (Gran Canaria). El área fue discretizada tridimensionalmente en celdas de 50x50 m considerando 3 capas. La capa superior está constituida por materiales sedimentarios y volcánicos (aluvial, derrubios de ladera y basaltos alterados) y las capas intermedia e inferior por basaltos. Se ha realizado un modelo en régimen estacionario simulando el año hidrológico medio 1991/92 y transitorio para el período de 1991/92-1998/99. Los límites norte, sur y este se han definido como bordes impermeables, la línea de costa se ha definido como nivel constante y la cabecera del barranco se ha simulado mediante un tramo de caudal prefijado representando el aporte de la cuenca alta del barranco. Las entradas en la zona son: recarga por lluvia, retornos de riego, pérdidas en la red de abastecimiento, cabecera del barranco principal y desde la zona de intra-caldera. Las salidas son: bombeos y descarga al mar. El borde inferior se define por el flujo nulo en el contacto entre los basaltos alterados y sin alterar. En el cauce de los barrancos se ha impuesto una condición de dren y las extracciones se han localizado según los datos obtenidos de las captaciones de la zona. Los parámetros resultantes de la calibración del modelo, en particular, la transmisividad, son del mismo orden que los obtenidos en estudios previos modelo. Por otro lado, los niveles calculados y observados presentan un buen ajuste y el balance hídrico resulta consistente. ABSTRACT. A groundwater flow model in La Aldea ravine lower part (Gran Canaria) has been developed. The zone has been tridimensionally discretized as cells of 50 x 50 m considering 3 layers. The superficial layer is formed by sedimentary and volcanic materials (Alluvial, screes and altered basalts) and the intermediate and lower layers are basalts. The model has been developed in stationary state for the average hydrologic year 1991/92 and in transitory state for the period of 1991/92-1998/99. The North, South and East limits have been defined as null flow boundary conditions, the coast line has been defined as constant level and the ravine bed at the east has been defined as a constant flow, representing the contribution from the upper ravine basin. Recharge is a result of rainfall, irrigation returns, supply network leaks and inflow from the intra-caldera zone. Discharge takes place by pumping wells and flows towards the sea. The bottom surface is defined as a null flow condition in the limit between altered and unaltered basalts. A drain condition has been imposed in the ravine and the pumping wells extraction has been located. The simulation results indicate that the transmisivities obtained in previous works present the same order of magnitude than the obtained in the model and the calculated levels are in good agreement with the observed levels measurements.

Evolución geomorfológica de la superficie de erosión R1000 en los Llanos de Castro Caldelas (Ourense)

[ES] Se presenta el análisis morfológico de un sector del replano RIOOO' El sector escogido está colgado por encima de la red fluvial actual. Este hecho permite atribuir a los cursos que drenan el replano un carácter semi funcional. Se han identificado once niveles de terrazas erosivas, que corresponden al desmantelamiento del replano inicial. La geometría de la red permite suponer que la organización actual se alcanzó mediante sucesivas capturas. Por otra parte, se han distinguido dos trazados de la red (centrípeta y en bayoneta); la red centrípeta define una superficie hueca y la red en bayoneta una superficie en rampas escalonadas. Se propone que ambas morfologías corresponderían a diferentes estadios de un mismo proceso: el vaciado del RIOOO' Por último, se propone la hipótesis de un descabalamiento tectónico del Rgoo para el origen de los Llanos.

A low complexity system based on multiple weighted decision trees for indoor localization

[EN] Indoor position estimation has become an attractive research topic due to growing interest in location-aware services. Nevertheless, satisfying solutions have not been found with the considerations of both accuracy and system complexity. From the perspective of lightweight mobile devices, they are extremely important characteristics, because both the processor power and energy availability are limited. Hence, an indoor localization system with high computational complexity can cause complete battery drain within a few hours. In our research, we use a data mining technique named boosting to develop a localization system based on multiple weighted decision trees to predict the device location, since it has high accuracy and low computational complexity.

Wireless systems for the fourth generation

Today, third generation networks are consolidated realities, and user expectations on new applications and services are becoming higher and higher. Therefore, new systems and technologies are necessary to move towards the market needs and the user requirements. This has driven the development of fourth generation networks. ”Wireless network for the fourth generation” is the expression used to describe the next step in wireless communications. There is no formal definition for what these fourth generation networks are; however, we can say that the next generation networks will be based on the coexistence of heterogeneous networks, on the integration with the existing radio access network (e.g. GPRS, UMTS, WIFI, ...) and, in particular, on new emerging architectures that are obtaining more and more relevance, as Wireless Ad Hoc and Sensor Networks (WASN). Thanks to their characteristics, fourth generation wireless systems will be able to offer custom-made solutions and applications personalized according to the user requirements; they will offer all types of services at an affordable cost, and solutions characterized by flexibility, scalability and reconfigurability. This PhD’s work has been focused on WASNs, autoconfiguring networks which are not based on a fixed infrastructure, but are characterized by being infrastructure less, where devices have to automatically generate the network in the initial phase, and maintain it through reconfiguration procedures (if nodes’ mobility, or energy drain, etc..., cause disconnections). The main part of the PhD activity has been focused on an analytical study on connectivity models for wireless ad hoc and sensor networks, nevertheless a small part of my work was experimental. Anyway, both the theoretical and experimental activities have had a common aim, related to the performance evaluation of WASNs. Concerning the theoretical analysis, the objective of the connectivity studies has been the evaluation of models for the interference estimation. This is due to the fact that interference is the most important performance degradation cause in WASNs. As a consequence, is very important to find an accurate model that allows its investigation, and I’ve tried to obtain a model the most realistic and general as possible, in particular for the evaluation of the interference coming from bounded interfering areas (i.e. a WiFi hot spot, a wireless covered research laboratory, ...). On the other hand, the experimental activity has led to Throughput and Packet Error Rare measurements on a real IEEE802.15.4 Wireless Sensor Network.

Study of silicon-on-insulator multiple-gate MOS structures including band-gap engineering and self heating effects

The progresses of electron devices integration have proceeded for more than 40 years following the well–known Moore’s law, which states that the transistors density on chip doubles every 24 months. This trend has been possible due to the downsizing of the MOSFET dimensions (scaling); however, new issues and new challenges are arising, and the conventional ”bulk” architecture is becoming inadequate in order to face them. In order to overcome the limitations related to conventional structures, the researchers community is preparing different solutions, that need to be assessed. Possible solutions currently under scrutiny are represented by: • devices incorporating materials with properties different from those of silicon, for the channel and the source/drain regions; • new architectures as Silicon–On–Insulator (SOI) transistors: the body thickness of Ultra-Thin-Body SOI devices is a new design parameter, and it permits to keep under control Short–Channel–Effects without adopting high doping level in the channel. Among the solutions proposed in order to overcome the difficulties related to scaling, we can highlight heterojunctions at the channel edge, obtained by adopting for the source/drain regions materials with band–gap different from that of the channel material. This solution allows to increase the injection velocity of the particles travelling from the source into the channel, and therefore increase the performance of the transistor in terms of provided drain current. The first part of this thesis work addresses the use of heterojunctions in SOI transistors: chapter 3 outlines the basics of the heterojunctions theory and the adoption of such approach in older technologies as the heterojunction–bipolar–transistors; moreover the modifications introduced in the Monte Carlo code in order to simulate conduction band discontinuities are described, and the simulations performed on unidimensional simplified structures in order to validate them as well. Chapter 4 presents the results obtained from the Monte Carlo simulations performed on double–gate SOI transistors featuring conduction band offsets between the source and drain regions and the channel. In particular, attention has been focused on the drain current and to internal quantities as inversion charge, potential energy and carrier velocities. Both graded and abrupt discontinuities have been considered. The scaling of devices dimensions and the adoption of innovative architectures have consequences on the power dissipation as well. In SOI technologies the channel is thermally insulated from the underlying substrate by a SiO2 buried–oxide layer; this SiO2 layer features a thermal conductivity that is two orders of magnitude lower than the silicon one, and it impedes the dissipation of the heat generated in the active region. Moreover, the thermal conductivity of thin semiconductor films is much lower than that of silicon bulk, due to phonon confinement and boundary scattering. All these aspects cause severe self–heating effects, that detrimentally impact the carrier mobility and therefore the saturation drive current for high–performance transistors; as a consequence, thermal device design is becoming a fundamental part of integrated circuit engineering. The second part of this thesis discusses the problem of self–heating in SOI transistors. Chapter 5 describes the causes of heat generation and dissipation in SOI devices, and it provides a brief overview on the methods that have been proposed in order to model these phenomena. In order to understand how this problem impacts the performance of different SOI architectures, three–dimensional electro–thermal simulations have been applied to the analysis of SHE in planar single and double–gate SOI transistors as well as FinFET, featuring the same isothermal electrical characteristics. In chapter 6 the same simulation approach is extensively employed to study the impact of SHE on the performance of a FinFET representative of the high–performance transistor of the 45 nm technology node. Its effects on the ON–current, the maximum temperatures reached inside the device and the thermal resistance associated to the device itself, as well as the dependence of SHE on the main geometrical parameters have been analyzed. Furthermore, the consequences on self–heating of technological solutions such as raised S/D extensions regions or reduction of fin height are explored as well. Finally, conclusions are drawn in chapter 7.

Effect of infill panels on the seismic response of a typical R.C. frame

Three structural typologies has been evaluated based on the nonlinear dynamic analysis (i.e. Newmark's methods for MDFs: average acceleration method with Modified Newton-Raphson iteration). Those structural typologies differ each other only for the infills presence and placement. In particular, with the term BARE FRAME: the model of the structure has two identical frames, arranged in parallel. This model constitutes the base for the generation of the other two typologies, through the addition of non-bearing walls. Whereas with the term INFILLED FRAME: the model is achieved by adding twelve infill panels, all placed in the same frame. Finally with the term PILOTIS: the model has been generated to represent structures where the first floor has no walls. Therefore the infills are positioned in only one frame in its three upper floors. All three models have been subjected to ten accelerograms using the software DRAIN 2000.

In situ real-time investigation of Organic Ultra-Thin-Film transistors: growth, electrical properties and biosensing applications

Organic electronics has grown enormously during the last decades driven by the encouraging results and the potentiality of these materials for allowing innovative applications, such as flexible-large-area displays, low-cost printable circuits, plastic solar cells and lab-on-a-chip devices. Moreover, their possible field of applications reaches from medicine, biotechnology, process control and environmental monitoring to defense and security requirements. However, a large number of questions regarding the mechanism of device operation remain unanswered. Along the most significant is the charge carrier transport in organic semiconductors, which is not yet well understood. Other example is the correlation between the morphology and the electrical response. Even if it is recognized that growth mode plays a crucial role into the performance of devices, it has not been exhaustively investigated. The main goal of this thesis was the finding of a correlation between growth modes, electrical properties and morphology in organic thin-film transistors (OTFTs). In order to study the thickness dependence of electrical performance in organic ultra-thin-film transistors, we have designed and developed a home-built experimental setup for performing real-time electrical monitoring and post-growth in situ electrical characterization techniques. We have grown pentacene TFTs under high vacuum conditions, varying systematically the deposition rate at a fixed room temperature. The drain source current IDS and the gate source current IGS were monitored in real-time; while a complete post-growth in situ electrical characterization was carried out. At the end, an ex situ morphological investigation was performed by using the atomic force microscope (AFM). In this work, we present the correlation for pentacene TFTs between growth conditions, Debye length and morphology (through the correlation length parameter). We have demonstrated that there is a layered charge carriers distribution, which is strongly dependent of the growth mode (i.e. rate deposition for a fixed temperature), leading to a variation of the conduction channel from 2 to 7 monolayers (MLs). We conciliate earlier reported results that were apparently contradictory. Our results made evident the necessity of reconsidering the concept of Debye length in a layered low-dimensional device. Additionally, we introduce by the first time a breakthrough technique. This technique makes evident the percolation of the first MLs on pentacene TFTs by monitoring the IGS in real-time, correlating morphological phenomena with the device electrical response. The present thesis is organized in the following five chapters. Chapter 1 makes an introduction to the organic electronics, illustrating the operation principle of TFTs. Chapter 2 presents the organic growth from theoretical and experimental points of view. The second part of this chapter presents the electrical characterization of OTFTs and the typical performance of pentacene devices is shown. In addition, we introduce a correcting technique for the reconstruction of measurements hampered by leakage current. In chapter 3, we describe in details the design and operation of our innovative home-built experimental setup for performing real-time and in situ electrical measurements. Some preliminary results and the breakthrough technique for correlating morphological and electrical changes are presented. Chapter 4 meets the most important results obtained in real-time and in situ conditions, which correlate growth conditions, electrical properties and morphology of pentacene TFTs. In chapter 5 we describe applicative experiments where the electrical performance of pentacene TFTs has been investigated in ambient conditions, in contact to water or aqueous solutions and, finally, in the detection of DNA concentration as label-free sensor, within the biosensing framework.

Setup sperimentale per l'analisi di rumore in dispositivi MOSFET di potenza

Progettazione dell'amplificatore, allestimento del banco di misure e misurazione del rumore di drain nei MOSFET di potenza

Transistors elettrochimici organici e la loro applicazione come sensori.

La presente tesi tratta della fabbricazione e del funzionamento di transistors elettrochimici organici (OECTs) composti da fi�lm sottili di poly(3,4-ethylenedioxythiophene) disperso con polystyrenesulfonic acid, o PEDOT:PSS, oltre che del loro possibile utilizzo come sensori. La trattazione si apre con una panoramica sui polimeri conduttivi, siano essi puri o drogati, e sulle loro caratteristiche chimiche ed elettriche: diversi metodi di drogaggio consentono il loro utilizzo come semiconduttori. Tra questi polimeri, il PEDOT �e uno dei pi�u utilizzati poich�e presenta accessibilit�a d'uso e ottima stabilit�a nel suo stato drogato, pur risultando insolubile in acqua; per ovviare a questo problema lo si polimerizza con PSS. Le propriet�a di questo composto sono poi ampiamente discusse, soprattutto in ambito di applicazioni tecniche, per le quali �e neccessario che il polimero in soluzione sia depositato su un substrato. A questo scopo vengono presentate le principali techiche che consentono la deposizione, permettendo di creare fil�lm sottili di materiale da utilizzarsi, nell'ambito di questa tesi, come gate e canale dei transistors elettrochimici. A seguire viene esposta la struttura degli OECTs e spiegato il loro funzionamento, modellizzando i dispositivi con un semplice circuito elettrico. Il confronto dei meno noti OECTs con i meglio conosciuti transistors a eff�etto campo semplifi�ca la comprensione del funzionamento dei primi, i quali sono rilevanti ai fi�ni di questa trattazione per il loro possibile funzionamento come sensori. In seguito alla spiegazione teorica, vengono illustrati i metodi seguiti per la deposizione di �film sottili di PEDOT:PSS tramite Spin Coating e per la fabbricazione degli OECTs su cui sono state eff�ettuate le misure, le quali sono state scelte e presentate in base ai risultati gi�a ottenuti in letteratura e a seconda dei dati ritenuti necessari alla caratterizzazione del transistor elettrochimico nell'ottica di un suo possibile utilizzo come sensore. Perci�o sono state eseguite misure amperometriche in funzione delle tensioni di gate e di drain, alternatamente tenendo costante una e variando l'altra, oltre che in funzione della concentrazione di elettrolita, dell'area del canale e del tempo. In conclusione sono presentati i dati sperimentali ottenuti ed una loro analisi.

Self-Assembled Monolayers (SAMs) in Organic Field-Effect Transistors

Organic printed electronics is attracting an ever-growing interest in the last decades because of its impressive breakthroughs concerning the chemical design of π-conjugated materials and their processing. This has an impact on novel applications, such as flexible-large-area displays, low- cost printable circuits, plastic solar cells and lab-on-a-chip devices. The organic field-effect transistor (OFET) relies on a thin film of organic semiconductor that bridges source and drain electrodes. Since its first discovery in the 80s, intensive research activities were deployed in order to control the chemico-physical properties of these electronic devices and consequently their charge. Self-assembled monolayers (SAMs) are a versatile tool for tuning the properties of metallic, semi-conducting, and insulating surfaces. Within this context, OFETs represent reliable instruments for measuring the electrical properties of the SAMs in a Metal/SAM/OS junction. Our experimental approach, named Charge Injection Organic-Gauge (CIOG), uses OTFT in a charge-injection controlled regime. The CIOG sensitivity has been extensively demonstrated on different homologous self-assembling molecules that differ in either chain length or in anchor/terminal group. One of the latest applications of organic electronics is the so-called “bio-electronics” that makes use of electronic devices to encompass interests of the medical science, such as biosensors, biotransducers etc… As a result, thee second part of this thesis deals with the realization of an electronic transducer based on an Organic Field-Effect Transistor operating in aqueous media. Here, the conventional bottom gate/bottom contact configuration is replaced by top gate architecture with the electrolyte that ensures electrical contact between the top gold electrode and the semiconductor layer. This configuration is named Electrolyte-Gated Field-Effect Transistor (EGOFET). The functionalization of the top electrode is the sensing core of the device allowing the detection of dopamine as well as of protein biomarkers with ultra-low sensitivity.

Use of isotopes for studying nitrogen processes in a wetland within the Venice Lagoon watershed

The present study is based on the use of isotopes for evaluating the efficiency of nutrients removal of a wetland, in particular nitrogen and nitrates, also between the different habitats present in the wetland. Nutrients like nitrogen and phosphorus, normally distributed as fertilizers, are among the principal causes of diffuse pollution. This is particularly important in the Adriatic Sea, which is frequently subjected to eutrophication phenomena. So it is very crucial requalification of wetland, in which there are naturally depurative processes such as denitrification and plant uptake, which allow the reduction of pollutant loads that flow in water bodies. In this study nutrient reduction is analyzed in the wetland of the Comuna drain, which waters flow in the Venice lagoon. Chemical and isotopical analyses were performed on samples of water, vegetation, soil and sediments taken in the wetlands of the Comuna drain in four different periods of the year and on data of nitrogen and phosphorus concentration obtained by the LASA of the University of Padova. Values of total nitrogen and nitrates were obtained in order to evaluate the reduction within the different systems of the wetland. Instead, the isotopic values of nitrogen and carbon were used to evaluate which process influence more nitrogen reduction and to understand the origin of the nutrient, if it is from fertilizers, waste water or sewage. To conclude, the most important process in the wetland of the Comuna drain is plant uptake, in facts the bigger percentage of nitrogen reduction was in the period of vegetative growth. So it is important the study of isotopes in plant tissues and water residence time, whose increase would allow a greater reduction of nutrients.

Investigation of the lithium ion mobility in cyclic model compounds and their ion conducting properties

Efficient energy storage and conversion is playing a key role in overcoming the present and future challenges in energy supply. Batteries provide portable, electrochemical storage of green energy sources and potentially allow for a reduction of the dependence on fossil fuels, which is of great importance with respect to the issue of global warming. In view of both, energy density and energy drain, rechargeable lithium ion batteries outperform other present accumulator systems. However, despite great efforts over the last decades, the ideal electrolyte in terms of key characteristics such as capacity, cycle life, and most important reliable safety, has not yet been identified. rnrnSteps ahead in lithium ion battery technology require a fundamental understanding of lithium ion transport, salt association, and ion solvation within the electrolyte. Indeed, well-defined model compounds allow for systematic studies of molecular ion transport. Thus, in the present work, based on the concept of ‘immobilizing’ ion solvents, three main series with a cyclotriphosphazene (CTP), hexaphenylbenzene (HBP), and tetramethylcyclotetrasiloxane (TMS) scaffold were prepared. Lithium ion solvents, among others ethylene carbonate (EC), which has proven to fulfill together with pro-pylene carbonate safety and market concerns in commercial lithium ion batteries, were attached to the different cores via alkyl spacers of variable length.rnrnAll model compounds were fully characterized, pure and thermally stable up to at least 235 °C, covering the requested broad range of glass transition temperatures from -78.1 °C up to +6.2 °C. While the CTP models tend to rearrange at elevated temperatures over time, which questions the general stability of alkoxide related (poly)phosphazenes, both, the HPB and CTP based models show no evidence of core stacking. In particular the CTP derivatives represent good solvents for various lithium salts, exhibiting no significant differences in the ionic conductivity σ_dc and thus indicating comparable salt dissociation and rather independent motion of cations and ions.rnrnIn general, temperature-dependent bulk ionic conductivities investigated via impedance spectroscopy follow a William-Landel-Ferry (WLF) type behavior. Modifications of the alkyl spacer length were shown to influence ionic conductivities only in combination to changes in glass transition temperatures. Though the glass transition temperatures of the blends are low, their conductivities are only in the range of typical polymer electrolytes. The highest σ_dc obtained at ambient temperatures was 6.0 x 10-6 S•cm-1, strongly suggesting a rather tight coordination of the lithium ions to the solvating 2-oxo-1,3-dioxolane moieties, supported by the increased σ_dc values for the oligo(ethylene oxide) based analogues.rnrnFurther insights into the mechanism of lithium ion dynamics were derived from 7Li and 13C Solid- State NMR investigations. While localized ion motion was probed by i.e. 7Li spin-lattice relaxation measurements with apparent activation energies E_a of 20 to 40 kJ/mol, long-range macroscopic transport was monitored by Pulsed-Field Gradient (PFG) NMR, providing an E_a of 61 kJ/mol. The latter is in good agreement with the values determined from bulk conductivity data, indicating the major contribution of ion transport was only detected by PFG NMR. However, the μm-diffusion is rather slow, emphasizing the strong lithium coordination to the carbonyl oxygens, which hampers sufficient ion conductivities and suggests exploring ‘softer’ solvating moieties in future electrolytes.rn

Studio di transistor elettrochimici e loro applicazioni

In questa tesi, utilizzando le particolari proprietà del polimero conduttivo poli(3,4-etilenediossitiofene) drogato con polistirene sulfonato , o PEDOT:PSS, sono stati realizzati dei transistor elettrochimici organici (OECTs), in cui il gate e canale source-drain sono stati realizzati depositando su substrato di vetro film sottili di questo polimero. I dispositivi realizzati sono stati caratterizzati, per comprenderne meglio le funzionalità e le proprietà per possibili applicazioni future, in particolare come sensori di glucosio. Il PEDOT:PSS è uno dei materiali più studiati per applicazioni della bioelettronica in virtù della sua grande stabilità chimica e termica, della reversibilità del suo processo di drogaggio, della grande conducibilità e delle sue proprietà elettrochimiche, nonché della sua attività in un vasto range di pH. Vengono trattate nell’elaborato anche le tecniche di deposizione di questo polimero per la creazione di film sottili, necessari per le varie applicazioni nell’ambito della bioelettronica organica, la quale si propone di unire la biologia e l’elettronica in un mutuale scambio di informazioni e segnali. Questa interazione si sta verificando soprattutto nel campo sanitario, come si può evincere dagli esempi riportati nella trattazione. Si conclude la parte teorica con una descrizione degli OECTs: viene spiegata la loro struttura, la capacità di connettere conducibilità ionica ed elettronica e il loro funzionamento, inserendo anche un confronto con i FET (“Field Effect Transistor”), per agevolare la comprensione dei meccanismi presenti in questi strumenti. Per la parte sperimentale si presenta invece una descrizione dettagliata dei procedimenti, degli strumenti e degli accorgimenti usati nel fabbricare i transistor sui quali si è lavorato in laboratorio, riportando anche una piccola esposizione sulle principali misure effettuate: curve caratterische I–V, transcaratteristiche e misure di corrente nel tempo sono le principali acquisizioni fatte per studiare i dispositivi. E’ stata studiata la diversa risposta degli OECTs al variare della concentrazione di PBS in soluzione, mostrando un generale rallentamento dei processi e una diminuzione della capacità di modificare la corrente source-drain al calare della concentrazione. In seguito, è stato effettuato un confronto tra transistor appena fatti e gli stessi analizzati dopo un mese, osservando una riduzione della corrente e quindi della conducibilità, seppur senza una modifica qualitativa delle curve caratteristiche (che mantengono il loro andamento). Per quanto riguarda la possibilità di usare questi dispositivi come sensori di glucosio, si introduce uno studio preliminare sulla risposta di un transistor, il cui gate è stato funzionalizzato con ferrocene, alla presenza di glucosio e glucosio ossidasi, un enzima necessario al trasferimento di elettroni, nella soluzione elettrolitica, seppur con qualche difficoltà, per via della mancanza di informazioni sui parametri da utilizzare e il range in cui compiere le misure (tuttora oggetto di ricerca).

Modeling multiple state electrostatically formed nanowire transistors

The present thesis work proposes a new physical equivalent circuit model for a recently proposed semiconductor transistor, a 2-drain MSET (Multiple State Electrostatically Formed Nanowire Transistor). It presents a new software-based experimental setup that has been developed for carrying out numerical simulations on the device and on equivalent circuits. As of 2015, we have already approached the scaling limits of the ubiquitous CMOS technology that has been in the forefront of mainstream technological advancement, so many researchers are exploring different ideas in the realm of electrical devices for logical applications, among them MSET transistors. The idea that underlies MSETs is that a single multiple-terminal device could replace many traditional transistors. In particular a 2-drain MSET is akin to a silicon multiplexer, consisting in a Junction FET with independent gates, but with a split drain, so that a voltage-controlled conductive path can connect either of the drains to the source. The first chapter of this work presents the theory of classical JFETs and its common equivalent circuit models. The physical model and its derivation are presented, the current state of equivalent circuits for the JFET is discussed. A physical model of a JFET with two independent gates has been developed, deriving it from previous results, and is presented at the end of the chapter. A review of the characteristics of MSET device is shown in chapter 2. In this chapter, the proposed physical model and its formulation are presented. A listing for the SPICE model was attached as an appendix at the end of this document. Chapter 3 concerns the results of the numerical simulations on the device. At first the research for a suitable geometry is discussed and then comparisons between results from finite-elements simulations and equivalent circuit runs are made. Where points of challenging divergence were found between the two numerical results, the relevant physical processes are discussed. In the fourth chapter the experimental setup is discussed. The GUI-based environments that allow to explore the four-dimensional solution space and to analyze the physical variables inside the device are described. It is shown how this software project has been structured to overcome technical challenges in structuring multiple simulations in sequence, and to provide for a flexible platform for future research in the field.

Laboratory and field investigation of the performance of suction drains, a novel low-carbon technology for ground stabilization

Con riferimento alla realizzazione di tunnel per servizi interrati, l’incertezza che contraddistingue il quadro geologico, oltre che incidere sui costi, riveste un ruolo chiave nella progettazione preliminare. Sebbene un’approfondita caratterizzazione geotecnica e geologica del volume di terreno inerente l’opera di scavo sia generalmente parte integrante del progetto, non è comunque possibile eliminare del tutto tali incertezze per via dell’estensione del volume interessato oltre che per la disomogeneità che sempre contraddistingue il terreno. Generalmente, investigazioni in corso d’opera e interventi di stabilizzazione devono essere previsti per contenere i costi di perforazione ed ottimizzare la progettazione. Ad esempio, tra i metodi di esplorazione geotecnica figurano i tunnel pilota, i quali sono in grado di garantire un’ottimale caratterizzazione del quadro geotecnico del sottosuolo. Con riferimento agli interventi di stabilizzazione del terreno, adottabili laddove una perforazione tradizionale non consentirebbe il tunnelling, vi è un vasta gamma di scelta. Pertanto, da una prima analisi delle problematiche connesse al tunnelling emerge che la stabilizzazione delle facce di scavo riveste un’importanza e un risconto applicativo di prim’ordine. Questa tesi si inserisce all’interno di un progetto che promuove un’innovativa ed economica tecnica di stabilizzazione dei tunnel per suzione tenendo quindi conto dell’influenza della suzione sulla coesione non drenata.