Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs

Top-illuminated metamorphic InGaAs p-i-n photodetectors (PDs) with 50% cut-off wavelength of 1.75 mu m at room temperature are fabricated on GaAs substrates. The PDs are grown by a solid-source molecular beam epitaxy system. The large lattice mismatch strain is accommodated by growth of a linearly graded buffer layer to create a high quality virtual InP substrate indium content in the metamorphic buffer layer linearly changes from 2% to 60%. The dark current densities are typically 5 x 10(-6) A/cm(2) at 0 V bias and 2.24 x 10(-4) A/cm(2) at a reverse bias of 5 V. At a wavelength of 1.55 mu m, the PDs have an optical responsivity of 0.48 A/W, a linear photoresponse up to 5 mW optical power at -4 V bias. The measured -3 dB bandwidth of a 32 mu m diameter device is 7 GHz. This work proves that InGaAs buffer layers grown by solid source MBE are promising candidates for GaAs-based long wavelength devices.

Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy

Tensile-strained InAlAs layers have been grown by solid-source molecular beam epitaxy on as-grown Fe-doped semi-insulating (SI) InP substrates and undoped SI InP substrates obtained by annealing undoped conductive InP wafers (wafer-annealed InP). The effect of the two substrates on InAlAs epilayers and InAlAs/InP type II heterostructures has been studied by using a variety of characterization techniques. Our calculation data proved that the out-diffusion of Fe atoms in InP substrate may not take place due to their low diffusion, coefficient. Double-crystal X-ray diffraction measurements show that the lattice mismatch between the InAlAs layers and the two substrates is different, which is originated from their different Fe concentrations. Furthermore, photoluminescence results indicate that the type II heterostructure grown on the wafer-annealed InP substrate exhibits better optical and interface properties than that grown on the as-grown Fe-doped substrate. We have also given a physically coherent explanation on the basis of these investigations. (C) 2003 Elsevier Science B.V. All rights reserved.

High-temperature characteristics of GaInNAs/GaAs single-quantum-well lasers grown by plasma-assisted molecular beam epitaxy

GaInNAs/GaAs single-quantum-well (SQW) lasers have been grown by solid-source molecular beam epitaxy. N is introduced by a home-made de-active plasma source. Incorporation of N into InGaAs decreases the bandgap significantly. The highest N concentration of 2.6% in a GaInNAs/GaAs QW is obtained, corresponding to the photoluminescence (PL) peak wavelength of 1.57 mum at 10 K. The PL peak intensity decreases rapidly and the PL full width at half maximum increases with the increasing N concentrations. Rapid thermal annealing at 850 degrees C could significantly improve the crystal quality of the QWs. An optimum annealing time of 5s at 850 degrees C was obtained. The GalnNAs/GaAs SQW laser emitting at 1.2 mum exhibits a high characteristic temperature of 115 K in the temperature range of 20 degrees C- 75 degrees C.

InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy

Self-assembled InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on a (311)B InP substrate. Transmission electron microscopy clearly shows that a high density of smaller InAs islands can be obtained by using such a high index substrate. After introducing a lattice-matched underlying In0.52Al0.24Ga0.24As layer, the InAs QDs are much more uniform in size and form two-dimensional well ordered arrays. The photoluminescence (PL) spectra also confirm that the InAs QDs grown on underlying In0.52Al0.24Ga0.24As have a better quality than those grown in the In0.52Al0.48As matrix. A simple calculation indicates that the redshift of the PL peak energy mainly results from InAs QDs on underlying In0.52Al0.24Ga0.24As of large size. (C) 2001 American Institute of Physics.

Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface

We have found that GaN epilayers grown by NH3-source molecular beam epitaxy (MBE) contain hydrogen. Dependent on the hydrogen concentration, GaN on (0001) sapphire can be either under biaxially compressive strain or under biaxially tensile strain. Furthermore, we notice that background electrons in GaN increase with hydrogen incorporation. X-ray photoelectron spectroscopy (XPS) measurements of the N1s region indicate that hydrogen is bound to nitrogen. So, the microdefect Ga...H-N is an effective nitrogen vacancy in GaN, and it may be a donor partly answering for the background electrons. (C) 1999 Elsevier Science B.V. All rights reserved.

GaN epilayers grown at high growth rate using gas source molecular beam epitaxy method

High-quality GaN epilayers have been grown by gas source molecular beam epitaxy using ammonia as the nitrogen source. During the growth, the growth rate is up to 1.2 mu m/h and can be varied from 0.3 to 1.2 mu m. The unintentional n-type doping as low as 7x10(17) cm(-3) was obtained at room temperature. Low-temperature photoluminescence spectrum was dominated by near-edge emission without deep-level related luminescence, indicative of high-quality epilayers. (C) 1998 Elsevier Science B.V. All rights reserved.

Ordered InAs quantum dots in InAlAs matrix on (001) InP substrates grown by molecular beam epitaxy

InAs self-organized quantum dots in InAlAs matrix lattice-matched to exactly oriented (001) InP substrates were grown by solid source molecular beam epitaxy (MBE) using the Stranski-Krastanow mode. Preliminary characterizations have been performed using photoluminescence and transmission electron microscopy. The geometrical arrangement of the quantum dots is found to be strongly dependent on the amount of coverage. At low deposition thickness. InAs QDs are arranged in chains along [1(1) over bar0$] directions. Luminescence from the quantum dots and the wetting layer consisting of quantum wells with well widths of 1, 2, and 3 monolayers is observed. (C) 1998 American Institute of Physics.

A study on GaP/Si heterostructures grown by GS-MBE

GaP/Si is a promoting heterostructure for Si-based optoelectronic devices since lattice constants of GaP and Si are so closed that they can match with each other. GaP was successfully grow on (100) Si subtracts by Gas-Source Molecular Bean Epitaxy (GS-MBE) in the study. The GaP/Si heterostructure was characterized by X-ray double crystal diffraction, Anger electron spectrograph, X-ray photonic spectrograph and photoluminescence (PL) measurements. The results showed that the epitaxial GaP layers are single crystalline, in which a parallel to and a (perpendicular to)are 0.54322 and 0.54625 nm, respectively. The peaks in PL spectra of GaP epitaxial layer grown on Si are 650, 627 and 640 nm, respectively. The study demonstrated that GaP/Si is a kind of lattice matched heterostructures and will be a promoting materials for future integrated photonics.

Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface

We have found that GaN epilayers grown by NH3-source molecular beam epitaxy (MBE) contain hydrogen. Dependent on the hydrogen concentration, GaN on (0001) sapphire can be either under biaxially compressive strain or under biaxially tensile strain. Furthermore, we notice that background electrons in GaN increase with hydrogen incorporation. X-ray photoelectron spectroscopy (XPS) measurements of the N1s region indicate that hydrogen is bound to nitrogen. So, the microdefect Ga...H-N is an effective nitrogen vacancy in GaN, and it may be a donor partly answering for the background electrons. (C) 1999 Elsevier Science B.V. All rights reserved.

Identification of herb Acanthopanax senticosus (Rupr. Et Maxim.) harms by capillary electrophoresis with electrochemical detection

In this paper, a rapid, high efficient, sensitive and inexpensive approach based on a combination of simple ultrasonic extract and capillary electrophoresis (CE) separation with electrochemical detection (ED), is described to identify herbs by comparing their CE-ED profiles (namely, CE-ED electropherograms). The proposed method takes advantage of ultrasmall sample volume, low consumption of organic solvent, simple sample pretreatment and easy cleanup procedure. It was applied to analyze the CE-ED profiles of stems of herb Acanthopanax senticosus (Rupr. Et Maxim.) Harms from different sources and different parts (roots, rhizomes, stems and leaves) of this herb. By comparing peak number, peak height and peak height ratio, we found that the CE-ED profiles showed big differences for the herbs from the different sources and the different parts of this herb. In addition, the distribution of bioactive compounds (isofraxidin, rutin and chlorogenic acid) in the different parts of this herb and their content variations affected by the source were studied with the CE-ED method. Based on their own unique CE-ED profiles, these herbs from the different sources and the different parts of this herb could be easily distinguished. Therefore, the proposed approach could be used as a rapid, high efficient and sensitive method for the identification of herbal medicines.

Magnetic metamaterial superlens for increased range wireless power transfer.

The ability to wirelessly power electrical devices is becoming of greater urgency as a component of energy conservation and sustainability efforts. Due to health and safety concerns, most wireless power transfer (WPT) schemes utilize very low frequency, quasi-static, magnetic fields; power transfer occurs via magneto-inductive (MI) coupling between conducting loops serving as transmitter and receiver. At the "long range" regime - referring to distances larger than the diameter of the largest loop - WPT efficiency in free space falls off as (1/d)(6); power loss quickly approaches 100% and limits practical implementations of WPT to relatively tight distances between power source and device. A "superlens", however, can concentrate the magnetic near fields of a source. Here, we demonstrate the impact of a magnetic metamaterial (MM) superlens on long-range near-field WPT, quantitatively confirming in simulation and measurement at 13-16 MHz the conditions under which the superlens can enhance power transfer efficiency compared to the lens-less free-space system.

The role of evacuation and fire modelling in the development of safer air travel

Computer based mathematical models describing the aircraft evacuation process and aircraft fire have a role to play in the design and development of safer aircraft, in the implementaion of safer and more rigorous certification criteria and in post mortuum accident investigation. As the cost and risk involved in performing large-scale fire/evacuation experiments for the next generation 'Very Large Aircraft' (VLA) are expected to be high, the development and use of these modelling tools may become essential if these aircraft are to prove a viable reality. By describing the present capabililties and limitations of the EXODUS evacuation model and associated fire models, this paper will examine the future development and data requirements of these models.

On the coupling of Navier–Stokes and linearised Euler equations for aeroacoustic simulation

Aerodynamic generation of sound is governed by the Navier–Stokes equations while acoustic propagation in a non-uniform medium is effectively described by the linearised Euler equations. Different numerical schemes are required for the efficient solution of these two sets of equations, and therefore, coupling techniques become an essential issue. Two types of one-way coupling between the flow solver and the acoustic solver are discussed: (a) for aerodynamic sound generated at solid surfaces, and (b) in the free stream. Test results indicate how the coupling achieves the necessary accuracy so that Computational Fluid Dynamics codes can be used in aeroacoustic simulations.

Using mathematical models to predict the development of aircraft cabin fires

Computer based mathematical models describing aircraft fire have a role to play in the design and development of safer aircraft, in the implementation of safer and more rigorous certification criteria and in post mortuum accident investigation. As the cost involved in performing large-scale fire experiments for the next generation 'Ultra High Capacity Aircraft' (UHCA) are expected to be prohibitively high, the development and use of these modelling tools may become essential if these aircraft are to prove a safe and viable reality. By describing the present capabilities and limitations of aircraft fire models, this paper will examine the future development of these models in the areas of large scale applications through parallel computing, combustion modelling and extinguishment modelling.

Feature-oriented grid topology design for aerospace configurations

The last few years have seen a substantial increase in the geometric complexity for 3D flow simulation. In this paper we describe the challenges in generating computation grids for 3D aerospace configuations and demonstrate the progress made to eventually achieve a push button technology for CAD to visualized flow. Special emphasis is given to the interfacing from the grid generator to the flow solver by semi-automatic generation of boundary conditions during the grid generation process. In this regard, once a grid has been generated, push button technology of most commercial flow solvers has been achieved. This will be demonstrated by the ad hoc simulation for the Hopper configuration.