Cruise 5 of the N. B. Scofield for 1953. Cruise Report 53-S-5

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Cruise 5 of the N. B. Scofield for 1954. Cruise Report 54-S-5

(PDF contains 4 pages.)

Cruise 5 of the N.B. Scofield for 1956. Cruise Report 56-S-5

(PDF contains 2 pages.)

Cruise 5 of the N.B. Scofield for 1957.

(PDF contains 4 pages.)

The effect of substrate orientation on the morphology of InAs nanostructures on (001) and (11n)A/B(n=1-5) InP substrates

Strained InAs nanostructures have been grown by solid-source molecular beam epitaxy in In0.52Al0.48As matrix on different InP substrate surfaces ((0 0 1) and (1 1 n)A/B (n = 1 - 5)). The morphology of the nanostructures was characterized using atomic force microscopy (AFM). The AFM results reveal interesting differences in the size, shape, and alignment of the nanostructures between different oriented surfaces. It was found that some faceted nanostructures tend to form on A-type surfaces, the shape and the alignment of these nanostructures show clear dependence on the substrate orientation. Samples grown on (0 0 1) and B-type surfaces showed preferentially dense round dots. Dots formed on (1 1 3)B, (1 1 3)B and (1 1 5)B surfaces have a higher dot density and size homogeneity, which shows a potential for the production of high-quality and customized self-assembled quantum dots for photonics applications. (C) 2000 Elsevier Science B.V. All rights reserved.

1.5 mu m luminescence characteristic of erbium in B, P doped a-SiO : H films

Hydrogenated amorphous silicon films co-doped with oxygen (O), boron (B) and phosphorus (P) were fabricated using PECVD technique. The erbium (Er) implanted samples were annealed in a N-2 ambient by rapid thermal annealing. Strong photoluminescence (PL) spectra of these samples were observed at room temperature. The incorporation of O, B and P could not only enhance the PL intensity but also the thermal annealing temperature of the strongest PL intensity. It seems that the incorporation of B or P can decrease the grain boundary potential barriers thus leading to an easier movement of carriers and a stronger PL intensity. Temperature dependence of PL indicated the thermal quenching of Er-doped hydrogenated amorphous silicon is very weak.

Efficient synthesis of substituted tetrahydrothiopyrano[2,3-b]thiopyran-4,5-diones by a double annulation strategy from dialkenoylketene dithioacetals

An efficient synthetic procedure for substituted 2,3,6,7tetrahydrothiopyrano [2,3-b] thiopyran-4,5 -diones by a double annulation strategy is described. The ring systems are made in good yields from readily available dialkenoylketene dithioacetals in the presence of either sodium sulfide nonahydrate/N,N-dimethylformamide (DMF) or a sodium hydride/DMF/amine system.

1-苯基-3-甲基-4-苯甲酰基-吡唑酮-5与中性磷(膦)萃取剂协同萃取镧B

研究了 1 苯基 3 甲基 4 苯甲酰基 -吡唑酮 5 (HPMBP)和中性有机磷 (膦 )类萃取剂Cyanex 4 71X(TIBPS ,B)在硝酸介质中对稀土元素La 的萃取 ,用斜率法和恒摩尔法探讨了萃取机理 ,确定了萃合物的组成为La(NO3 ) 2 ·PMBP·B ,计算了萃取平衡常数。比较了HPMBP与Cyanex 4 71X、Cyanex 92 1、Cyanex 92 3、Cyanex 92 5、DEH/EHP、P35 0及TBP的单独及混合体系萃取La 的性能 ,结果表明 :所有混合体系对La 均有协同效应 ,其中HPMBP与Cyanex 92 3、Cyanex 92 1、Cyanex 92 5的混合体系是萃取La 的有效体系。

2,5-二(2-菲基)-[3,2-b]并二噻吩的合成、表征及在有机薄膜晶体管中的应用

近年来,有机薄膜晶体管(OTFTs)因其成本低、加工简便,特别适用于制备大面积柔性器件而引起人们的广泛关注[1].并苯类化合物和噻吩衍生物是目前最重要的两类高迁移率OTFT材料.由并五苯制备的多晶OTFTs器件迁移率可达到5cm2/(V·s)[2];烷基修饰齐聚噻吩的场致迁移率也可达到非晶硅[0·1~1cm2/(V·s)]的水平[3].但是,这两类材料具有较窄的能隙和较高的最高被占分子轨道(HOMO)能级,容易与空气中的氧气和水发生作用,所制备的器件在空气中衰减较快,并且并苯类化合物对光也非常敏感,限制了其应用范围[4~6].因此,制备稳定的高迁移率有机半导体材料是有机光电子研究领域的重要课题之一.制备稳定的高迁移率有机半导体材料的途径包括用较稳定的芳香基团对噻吩齐聚物进行封端,以增大能隙和降低HOMO能级[7].菲类化合物是并苯类化合物的异构体,具有较好的光稳定性[8].[3,2-b]并二噻吩是一种平面稠环分子,与2,2′-二噻吩相比,HOMO能级相对降低,因而具有相对好的稳定性[9].本文合成了2,5-二(2-菲基)-[3,2-b]并二噻吩(PhTT),表征了其基本的物理和化学性质,制备了相应的有机薄膜晶...

6,7,8,9-Tetrahydro-5H-pyrido[2,3-b]azepine-5,8-dione: a hydrogen-bonded dimer structure

In the title compound, C9H8N2O2, two crystallographically independent molecules form a dimer structure, in which two N-H center dot center dot center dot N hydrogen bonds generate an intermolecular R-2(2)( 8) ring.