Pollen records of profile Krumbach from southern Germany

Some years ago a fossil lake basin was found in the northeastern part of the former Rhine-pied- mont-glacier, situated between the endmoraine system ofthe elassical Riß- andWürm glacia- tions, respectively. The lacustrine sediments contain the pollenflora ofthe Eemian interglacial. They are intensively thrusted. These sediments are eovered by a loam-layer, rieh in elasts. The thickness of this loam-layer varies between at least 170 and 400 cm. It consists in its major part of loess-loam and solifluction material. Yet just on top of the lake sediments mentioned an in- tensively compressed loam, characterized by quarzgrains with all features of glacially pressed material, together with striated elasts is met with. It strongly resembles atil!. Ifthis is true, the stratigraphie division ofthe last glaciation strongly deviates from the hitherto accepted scheme, incorporating an early glacier advance, long before the elassical young-endmoraine systems of the Würm glaciation were formed.

Biostratigraphical investigations of Lago d'Averno, near Naples

Remains of diatoms, molluscs, ostracods, foraminifera and pollen exines preserved in the sediments of Lago d'Averno, a volcanic lake in the Phlegrean Fields west of Naples, allowed us to reconstruct the changes in the ecological conditions of the lake and of the vegetation around it for the period from 800 BC to 800 AD. Lago d'Averno was at first a freshwater lake, temporarily influenced by volcanic springs. Salinity increased slowly during Greek times as a result of subsidence of the surrounding land. Saline conditions developed only after the lake was connected with the sea by a canal, when Portus Julius was built in 37 BC. The first post-Roman period of uplift ended with a short freshwater phase during the 7th century after Christ. Deciduous oakwoods around the lake was transformed into a forest of evergreen oaks in Greek times and thrived there - apparently almost uninfluenced by man - until it was felled, when the Avernus was incorporated into the new Roman harbour in 37 BC, to construct a shipyard and other military buildings there. Land-use was never more intense than during Roman times and weakest in Greek and Early Roman times, when the Avernus was considered a holy place, the entrance to the underworld.

Pollen record and dating of a sediment profile from Lake Voulkaria, Greece

A palynological investigation of a Holocene profile from Lake Voulkaria, western Greece, was carried out as a contribution to the environmental history of the coastal area of northwestern Acarnania and the Classical city of Palairos. It shows that deciduous oaks dominated the natural vegetation of the area throughout the Holocene. Until ca. 7000 B.C. Pistacia occurred abundantly, while other evergreen woody taxa were rare. At ca. 6300 B.C. an expansion of Carpinus orientalis/Ostrya can be observed. Around ca. 5300 B.C. spreading of Erica indicates a change to a drier climate and/or first human impact. Since ca. 3500 B.C. an increase of evergreen shrubs now clearly indicates land-use. The foundation of the Classical city of Palairos led to a temporary expansion of Phillyrea maquis. Within this period, molluscs of brackish water indicate the use of the lake as a harbour after the construction of a connection to the sea. The deciduous Quercus woodland recovered when human impact decreased in the area, and lasted until modern times.

Lithology and pollen record of 4 profiles from the Bavaria, southern Germany

Palynological investigations of sediments from northern Bavaria (Rhön, Grabfeld, Lange Berge) reveal the Late Glacial and Postglacial history of the regional vegetation. The older sedirnents were found in the Rhön (Schwarzes Moor) and date back into the Bölling Period. At the end of that period pine spread into the Grabfeld. In both areas Lacher Tuff has been found. A radiocarbon date of 10,300 BP was found for the Late Glacial - Postglacial transition and one of 9300 BP for the Preboreal - Boreal transition. Hazel reached its highest values in the Rhön around 7,400 BP. During the Atlanticum a deciduous mixed oak forest covered the Rhön and Grabfeld regions. Beech dominated since the Subatlanticum. In the Lange Berge region, however, a mixed forest with Fagus, Picea, Pinus and Abies developed. In the Rhön first anthropogenic influence was found during the Latene Period. The boundary between zone IX and X has been dated at 820 A.D., and the start of extensive forest clearances at 1000 A. D. A culmination of landuse was found for the Medieval Period. At the end of that period however the Rhön was deserted. New forest clearances started around 1500 A.D., but were interrupted by the 'Thirty Years War'. Afterwards the Rhön got its present appearance.

Mineralogy of silts from the Bengal Fan

Early Miocene to Quaternary sediments drilled from the Bengal Fan are divided into six zones by modal proportions of heavy minerals. The sediments were mostly derived from the Himalayas. Detritus from the Indian subcontinent is found sporadically in clay-rich sediments that were deposited during periods of slow sedimentation, when the deep-sea channel migrated away from the drilled sites. The oldest sediments, ranging from 17 to about 15 Ma, were derived mostly from the Precambrian and Paleozoic sedimentary rocks of the lower Himalayas. At about 15 Ma, metamorphic terrains were eroded in the source area. Further large-scale unroofing of metamorphic rocks occurred around 11 Ma. After 10 Ma, the major constituents in the drainage basin or the drainage pattern changed a few times. Between 3.5 and 0.5 Ma, a large peridotite body was unroofed by uplift and successive erosion of the central Himalayas. At this time, the single large river that had supplied detritus to the early Bengal Fan was divided into the Indus and Ganges rivers.

Pollen spectra and relative pollen productivity estimates for common taxa of the northern Siberian Arctic

Pollen productivity estimates (PPE) are used to quantitatively reconstruct variations in vegetation within a specific distance of the sampled pollen archive. Here, for the first time, PPEs from Siberia are presented. The study area (Khatanga region, Krasnoyarsk territory, Russia) is located in the Siberian Sub-arctic where Larixis the sole forest-line forming tree taxon. Pollen spectra from two different sedimentary environments, namely terrestrial mosses (n=16) and lakes (n=15, median radius ~100 m) and their surrounding vegetation were investigated to extract PPEs. Our results indicate some differences in pollen spectra between moss and lake pollen. Larix and Cyperaceae for example obtained higher representation in the lacustrine than in terrestrial moss samples. This highlights that in calibration studies modern and fossil dataset should be of similar sedimentary origin. The results of the Extended R-Value model were applied to assess the relevant source area of pollen (RSAP) and to calculate the PPEs for both datasets. As expected, the RSAP of the moss samples was very small (about 10 m) compared to the lacustrine samples (about 25 km). Calculation of PPEs for the six most common taxa yielded generally similar results for both datasets. Relative to Poaceae (reference taxon, PPE=1) Betula nana-type (PPEmoss: 1.8, PPElake: 1.8) and Alnusfruticosa-type (PPEmoss: 6.4, PPElake: 2.9) were overrepresented while Cyperaceae (PPEmoss: 0.5, PPElake: 0.1), Ericaceae (PPEmoss: 0.3, PPElake <0.01), Salix (PPEmoss: 0.03, PPElake <0.01) and Larix (PPEmoss <0.01, PPElake: 0.2) were under-represented in the pollen spectra compared to the vegetation in the RSAP. The estimation for the dominant tree in the region, Larixgmelinii, is the first published result for this species, but need to be considered very preliminary. The inferred sequence from over- to under-representation is mostly consistent with results from Europe; however, still the absolute values show some differences. Gathering vegetation data was limited by flowering season and low resolute satellite imagery and accessibility of the remote location of our study area. Therefore, our estimate may serve as first reference to strengthen future vegetation reconstructions in this climate-sensitive region.

Pollen and macrofossils profiles and age determination from the Pittsburg Basin in the lowlands of south-central Illinois

Pollen and macrofossil evidence for the nature of the vegetation during glacial and interglacial periods in the regions south of the Wisconsinan ice margin is still very scarce. Modern opinions concerning these problems are therefore predominantly derived from geological evidence only or are extrapolated from pollen studies of late Wisconsinan deposits. Now for the first time pollen and macrofossil analyses are available from south-central Illinois covering the Holocene, the entire Wisconsinan, and most probably also Sangamonian and late Illinoian time. The cores studied came from three lakes, which originated as kettle holes in glacial drift of Illinoian age near Vandalia, Fayette County. The Wisconsinan ice sheet approached the sites from the the north to within about 60 km distance only. One of the profiles (Pittsburg Basin) probably reaches back to the late Illinoian (zone 1), which was characterized by forests with much Picea. Zone 2, most likely of Sangamonian age, represents a period of species-rich deciduous forests, which must have been similar to the ones that thrive today south and southeast of the prairie peninsula. During the entire Wisconsinan (14C dates ranging from 38,000 to 21,000 BP) thermophilous deciduous trees like Quercus, Carya, and Ulmus occurred in the region, although temporarily accompanied by tree genera with a more northerly modern distribution, such as Picea, which entered and then left south-central Illinois during the Woodfordian. Thus it is evident that arctic climatic conditions did not prevail in the lowlands of south-central Illinois (about 38°30' lat) during the Wisconsinan, even at the time of the maximum glaciation, the Woodfordian. The Wisconsinan was, however, not a period of continuous forest. The pollen assemblages of zone 3 (Altonian) indicate prairie with stands of trees, and in zone 4 the relatively abundant Artemisia pollen indicates the existence of open vegetation and stands of deciduous trees, Picea, and Pinus. True tundra may have existed north of the sites, but if so its pollen rain apparently is marked by pollen from nearby stands of trees. After the disappearance of Pinus and Picea at about 14,000 BP (estimated!), there developed a mosaic of prairies and stands of Quercus, Carya, and other deciduous tree genera (zone 5). This type of vegetation persisted until it was destroyed by cultivation during the 19th and 20th century. Major vegetational changes are not indicated in the pollen diagram for the late Wisconsinan and the Holocene. The dating of zones 1 and 2 is problematical because the sediments are beyond the14C range and because of the lack of stratigraphic evidence. The zones dated as Illinoian and Sangamonian could also represent just a Wisconsinan stadial and interstadial. This possibility, however, seems to be contradicted by the late glacial and interglacial character of the forest vegetation of that time.

Pollen analysis of soil samples from the A.D. 79 level. Boscoreale, Oplontis, and Pompeii

Fifty samples of Roman time soil preserved under the thick ash layer of the A.D.79 eruption of Mt Vesuvius were studied by pollen analysis: 33 samples from a former vineyard surrounding a Villa Rustica at Boscoreale (excavation site 40 x 50 m), 13 samples taken along the 60 m long swimming pool in the sculpture garden of the Villa of Poppaea at Oplontis, and four samples from the formal garden (12.4 x 17.5 m) of the House of the Gold Bracelet in Pompeii. To avoid contamination with modern pollen all samples were taken immediately after uncovering a new portion of the A.D. 79 soil. For comparison also samples of modern Italian soils were studied. Using standard methods for pollen preparation the pollen content of 15 of the archaeological samples proved to be too little to reach a pollen sum of more than 100 grains. The pollen spectra of these samples are not shown in the pollen tables. (Flotation with a sodium tungstate solution, Na2WO4, D = 2.05, following treatment with HCl and NaOH would probably have given a somewhat better result. This method was, however, not available as too expensive at that time.) Although the archaeological samples were taken a few meters apart their pollen values differ very much from one sample to the other. E.g., at Boscoreale (SW quarter). the pollen values of Pinus range from 1.5 to 54.5% resp. from 1 to 244 pine pollen grains per 1 gram of soil, the extremes even found under pine trees. Vitis pollen was present in 7 of the 11 vineyard samples from Boscoreale (NE quarter) only. Although a maximum of 21.7% is reached, the values of Vitis are mostly below 1.5%. Even the values of common weeds differ very much, not only at Boscoreale, but also at the other two sites. The pollen concentration values show similar variations: 3 to 3053 grains and spores were found in 1 g of soil. The mean value (290) is much less than the number of pollen grains, which would fall on 1 cm2 of soil surface during one year. In contrast, the pollen and spore concentrations of the recent soil samples, treated in exactly the same manner, range from 9313 to almost 80000 grains per 1 g of soil. Evidently most of the Roman time pollen has disappeared since its deposition, the reasons not being clear. Not even species which are known to have been cultivated in the garden of Oplontis, like Citrus and Nerium, plant species with easily distinguishable pollen grains, could be traced by pollen analysis. The loss of most of the pollen grains originally contained in the soil prohibits any detailed interpretation of the Pompeian pollen data. The pollen counts merely name plant species which grew in the region, but not necessarily on the excavated plots.

Tunable mechanical resonator with aluminum nitride piezoelectric

The electromechanical response of piezoelectrically-actuated AlN micromachined bridge resonators has been characterized using laser interferometry and electrical admittance measurements. We compare the response of microbridges with different dimensions and buckling (induced by the initial residual stress of the layers). The resonance frequencies are in good agreement with numerical simulations of the electromechanical behavior of the structures. We show that it is possible to perform a rough tuning of the resonance frequencies by allowing a determined amount of builtin stress in the microbridge during its fabrication. Once the resonator is made, a DC bias added to the AC excitation signal allows to fine-tune the frequency. Our microbridges yield a tuning factor of around 88 Hz/V for a 500 ?m-long microbridge.

Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy

We present a study of the optical properties of GaN/AlN and InGaN/GaN quantum dot (QD) superlattices grown via plasma-assisted molecular-beam epitaxy, as compared to their quantum well (QW) counterparts. The three-dimensional/two-dimensional nature of the structures has been verified using atomic force microscopy and transmission electron microscopy. The QD superlattices present higher internal quantum efficiency as compared to the respective QWs as a result of the three-dimensional carrier localization in the islands. In the QW samples, photoluminescence (PL) measurements point out a certain degree of carrier localization due to structural defects or thickness fluctuations, which is more pronounced in InGaN/GaN QWs due to alloy inhomogeneity. In the case of the QD stacks, carrier localization on potential fluctuations with a spatial extension smaller than the QD size is observed only for the InGaN QD-sample with the highest In content (peak emission around 2.76 eV). These results confirm the efficiency of the QD three-dimensional confinement in circumventing the potential fluctuations related to structural defects or alloy inhomogeneity. PL excitation measurements demonstrate efficient carrier transfer from the wetting layer to the QDs in the GaN/AlN system, even for low QD densities (~1010 cm-3). In the case of InGaN/GaN QDs, transport losses in the GaN barriers cannot be discarded, but an upper limit to these losses of 15% is deduced from PL measurements as a function of the excitation wavelength.

Solidly Mounted Resonators with Carbon Nanotube Electrodes for Biosensing Applications

The work reported here shows a direct experimental comparison of the sensitivities of AlN solidly mounted resonators (SMR)-based biosensors fabricated with standard metal electrodes and with carbon nanotube electrodes. SMRs resonating at frequencies around 1.75 GHz have been fabricated, some devices using a thin film of multi-wall carbon nanotubes (CNTs) as the top electrode material and some identical devices using a chromium/gold electrode. Protein solutions with different concentrations were loaded on the top of the resonators and their responses to mass-load from physically adsorbed coatings were investigated. Results show that resonators using CNTs as the top electrode material exhibited higher frequency change for a given load due to the higher active surface area of a thin film of interconnecting CNTs compared to that of a metal thin film electrode and hence exhibited greater mass loading sensitivity. It is therefore concluded that the use of CNT electrodes on resonators for their use as gravimetric biosensors is viable and worthwhile.

Characterization of Amorphous Tantalum Oxide for Insulating Acoustic Mirrors

This work describes the assessment of the acoustic properties of sputtered tantalum oxide films intended as high impedance films for the acoustic isolation of bulk acoustic wave devices operating in the GHz frequency range. The films are grown by sputtering a metallic tantalum target under different oxygen and argon gas mixtures, total pressures, pulsed DC powers and substrate bias. The structural properties of the films are assessed through infrared absorption spectroscopy and X-ray diffraction measurements. Their acoustic impedance is obtained after estimating the mass density by X-ray reflectometry measurements and the longitudinal acoustic velocity by analyzing the longitudinal λ/2 resonance induced in a tantalum oxide film inserted between an acoustic reflector and an AlN-based resonator. A second measurement of the sound velocity is achieved through picosecond acoustic spectroscopy.

Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy

The high lattice mismatch between III-nitride binaries (InN, GaN and AlN) remains a key problem to grow high quality III-nitride heterostructures. Recent interest has been focused on the growth of high-quality InAlN layers, with approximately 18% of indium incorporation, in-plane lattice-matched (LM) to GaN. While a lot of work has been done by metal-organic vapour phase epitaxy (MOVPE) by Carlin and co-workers, its growth by molecular beam epitaxy (MBE) is still in infancy

Crecimiento, fabricación y caracterización de heteroestructuras y nanocolumnas ordenadas basadas en nitruros del grupo III para aplicaciones sensoras

Esta memoria está basada en el crecimiento y caracterización de heteroestructuras Al(Ga)N/GaN y nanocolumnas ordenadas de GaN, y su aplicación en sensores químicos. El método de crecimiento ha sido la epitaxia de haces moleculares asistida por plasma (PAMBE). En el caso de las heteroestructuras Al(Ga)N/GaN, se han crecido barreras de distinto espesor y composición, desde AlN de 5 nm, hasta AlGaN de 35 nm. Además de una caracterización morfológica, estructural y eléctrica básica de las capas, también se han fabricado a partir de ellas dispositivos tipo HEMTs. La caracterización eléctrica de dichos dispositivos (carga y movilidad de en el canal bidimensional) indica que las mejores heteroestructuras son aquellas con un espesor de barrera intermedio (alrededor de 20 nm). Sin embargo, un objetivo importante de esta Tesis ha sido verificar las ventajas que podían tener los sensores basados en heteroestructuras AlN/GaN (frente a los típicos basados en AlGaN/GaN), con espesores de barrera muy finos (alrededor de 5 nm), ya que el canal de conducción que se modula por efecto de cambios químicos está más cerca de la superficie en donde ocurren dichos cambios químicos. De esta manera, se han utilizado los dispositivos tipo HEMTs como sensores químicos de pH (ISFETs), y se ha comprobado la mayor sensibilidad (variación de corriente frente a cambios de pH, Ids/pH) en los sensores basados en AlN/GaN frente a los basados en AlGaN/GaN. La mayor sensibilidad es incluso más patente en aplicaciones en las que no se utiliza un electrodo de referencia. Se han fabricado y caracterizado dispositivos ISFET similares utilizando capas compactas de InN. Estos sensores presentan peor estabilidad que los basados en Al(Ga)N/GaN, aunque la sensibilidad superficial al pH era la misma (Vgs/pH), y su sensibilidad en terminos de corriente de canal (Ids/pH) arroja valores intermedios entre los ISFET basados en AlN/GaN y los valores de los basados en AlGaN/GaN. Para continuar con la comparación entre dispositivos basados en Al(Ga)N/GaN, se fabricaron ISFETs con el área sensible más pequeña (35 x 35 m2), de tamaño similar a los dispositivos destinados a las medidas de actividad celular. Sometiendo los dispositivos a pulsos de voltaje en su área sensible, la respuesta de los dispositivos de AlN presentaron menor ruido que los basados en AlGaN. El ruido en la corriente para dispositivos de AlN, donde el encapsulado no ha sido optimizado, fue tan bajo como 8.9 nA (valor rms), y el ruido equivalente en el potencial superficial 38.7 V. Estos valores son más bajos que los encontrados en los dispositivos típicos para la detección de actividad celular (basados en Si), y del orden de los mejores resultados encontrados en la literatura sobre AlGaN/GaN. Desde el punto de vista de la caracterización electro-química de las superficies de GaN e InN, se ha determinado su punto isoeléctrico. Dicho valor no había sido reportado en la literatura hasta el momento. El valor, determinado por medidas de “streaming potential”, es de 4.4 y 4 respectivamente. Este valor es una importante característica a tener en cuenta en sensores, en inmovilización electrostática o en la litografía coloidal. Esta última técnica se discute en esta memoria, y se aplica en el último bloque de investigación de esta Tesis (i.e. crecimiento ordenado). El último apartado de resultados experimentales de esta Tesis analiza el crecimiento selectivo de nanocolumnas ordenadas de GaN por MBE, utilizando mascaras de Ti con nanoagujeros. Se ha estudiado como los distintos parámetros de crecimiento (i.e. flujos de los elementos Ga y N, temperatura de crecimiento y diseño de la máscara) afectan a la selectividad y a la morfología de las nanocolumnas. Se ha conseguido con éxito el crecimiento selectivo sobre pseudosustratos de GaN con distinta orientación cristalina o polaridad; templates de GaN(0001)/zafiro, GaN(0001)/AlN/Si, GaN(000-1)/Si y GaN(11-20)/zafiro. Se ha verificado experimentalmente la alta calidad cristalina de las nanocolumnas ordenadas, y su mayor estabilidad térmica comparada con las capas compactas del mismo material. Las nanocolumnas ordenadas de nitruros del grupo III tienen una clara aplicación en el campo de la optoelectrónica, principalmente para nanoemisores de luz blanca. Sin embargo, en esta Tesis se proponen como alternativa a la utilización de capas compactas o nanocolumnas auto-ensambladas en sensores. Las nanocolumnas auto-ensambladas de GaN, debido a su alta razón superficie/volumen, son muy prometedoras en el campo de los sensores, pero su amplia dispersión en dimensiones (altura y diámetro) supone un problema para el procesado y funcionamiento de dispositivos reales. En ese aspecto, las nanocolumnas ordenadas son más robustas y homogéneas, manteniendo una alta relación superficie/volumen. Como primer experimento en el ámbito de los sensores, se ha estudiado como se ve afectada la emisión de fotoluminiscencia de las NCs ordenadas al estar expuestas al aire o al vacio. Se observa una fuerte caída en la intensidad de la fotoluminiscencia cuando las nanocolumnas están expuestas al aire (probablemente por la foto-adsorción de oxigeno en la superficie), como ya había sido documentado anteriormente en nanocolumnas auto-ensambladas. Este experimento abre el camino para futuros sensores basados en nanocolumnas ordenadas. Abstract This manuscript deals with the growth and characterization of Al(Ga)N/GaN heterostructures and GaN ordered nanocolumns, and their application in chemical sensors. The growth technique has been the plasma-assisted molecular beam epitaxy (PAMBE). In the case of Al(Ga)N/GaN heterostructures, barriers of different thickness and composition, from AlN (5 nm) to AlGaN (35 nm) have been grown. Besides the basic morphological, structural and electrical characterization of the layers, HEMT devices have been fabricated based on these layers. The best electrical characteristics (larger carriers concentration and mobility in the two dimensional electron gas) are those in AlGaN/GaN heterostructures with a medium thickness (around 20 nm). However, one of the goals of this Thesis has been to verify the advantages that sensors based on AlN/GaN (thickness around 7 nm) have compared to standard AlGaN/GaN, because the conduction channel to be modulated by chemical changes is closer to the sensitive area. In this way, HEMT devices have been used as chemical pH sensors (ISFETs), and the higher sensitivity (conductance change related to pH changes, Ids/pH) of AlN/GaN based sensors has been proved. The higher sensibility is even more obvious in application without reference electrode. Similar ISFETs devices have been fabricated based on InN compact layers. These devices show a poor stability, but its surface sensitivity to pH (Vgs/pH) and its sensibility (Ids/pH) yield values between the corresponding ones of AlN/GaN and AlGaN/GaN heterostructures. In order to a further comparison between Al(Ga)N/GaN based devices, ISFETs with smaller sensitive area (35 x 35 m2), similar to the ones used in cellular activity record, were fabricated and characterized. When the devices are subjected to a voltage pulse through the sensitive area, the response of AlN based devices shows lower noise than the ones based on AlGaN. The noise in the current of such a AlN based device, where the encapsulation has not been optimized, is as low as 8.9 nA (rms value), and the equivalent noise to the surface potential is 38.7 V. These values are lower than the found in typical devices used for cellular activity recording (based on Si), and in the range of the best published results on AlGaN/GaN. From the point of view of the electrochemical characterization of GaN and InN surfaces, their isoelectric point has been experimentally determined. Such a value is the first time reported for GaN and InN surfaces. These values are determined by “streaming potential”, being pH 4.4 and 4, respectively. Isoelectric point value is an important characteristic in sensors, electrostatic immobilization or in colloidal lithography. In particular, colloidal lithography has been optimized in this Thesis for GaN surfaces, and applied in the last part of experimental results (i.e. ordered growth). The last block of this Thesis is focused on the selective area growth of GaN nanocolumns by MBE, using Ti masks decorated with nanoholes. The effect of the different growth parameters (Ga and N fluxes, growth temperature and mask design) is studied, in particular their impact in the selectivity and in the morphology of the nanocolumns. Selective area growth has been successful performed on GaN templates with different orientation or polarity; GaN(0001)/sapphire, GaN(0001)/AlN/Si, GaN(000- 1)/Si and GaN(11-20)/sapphire. Ordered nanocolumns exhibit a high crystal quality, and a higher thermal stability (lower thermal decomposition) than the compact layers of the same material. Ordered nanocolumns based on III nitrides have a clear application in optoelectronics, mainly for white light nanoemitters. However, this Thesis proposes them as an alternative to compact layers and self-assembled nanocolumns in sensor applications. Self-assembled GaN nanocolumns are very appealing for sensor applications, due to their large surface/volume ratio. However, their large dispersion in heights and diameters are a problem in terms of processing and operation of real devices. In this aspect, ordered nanocolumns are more robust and homogeneous, keeping the large surface/volume ratio. As first experimental evidence of their sensor capabilities, ordered nanocolumns have been studied regarding their photoluminiscence on air and vacuum ambient. A big drop in the intensity is observed when the nanocolumns are exposed to air (probably because of the oxygen photo-adsortion), as was already reported in the case of self-assembled nanocolumns. This opens the way to future sensors based on ordered III nitrides nanocolumns.