Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates

The main focus and concerns of this PhD thesis is the growth of III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates using molecular beam epitaxy (MBE) technique. The investigation of influence of the major growth parameters on their basic properties (density, geometry, composition, size etc.) and the systematic characterization of their structural and optical properties are the core of the research work. The monolithic integration of III-V optoelectronic devices with silicon electronic circuits could bring enormous prospect for the existing semiconductor technology. Our challenging approach is to combine the superior passive optical properties of silicon with the superior optical emission properties of III-V material by reducing the amount of III-V materials to the very limit of the active region. Different heteroepitaxial integration approaches have been investigated to overcome the materials issues between III-V and Si. However, this include the self-assembled growth of InAs and InGaAs QDs in silicon and GaAx matrices directly on flat silicon substrate, sitecontrolled growth of (GaAs/In0,15Ga0,85As/GaAs) QDs on pre-patterned Si substrate and the direct growth of GaP on Si using migration enhanced epitaxy (MEE) and MBE growth modes. An efficient ex-situ-buffered HF (BHF) and in-situ surface cleaning sequence based on atomic hydrogen (AH) cleaning at 500 °C combined with thermal oxide desorption within a temperature range of 700-900 °C has been established. The removal of oxide desorption was confirmed by semicircular streaky reflection high energy electron diffraction (RHEED) patterns indicating a 2D smooth surface construction prior to the MBE growth. The evolution of size, density and shape of the QDs are ex-situ characterized by atomic-force microscopy (AFM) and transmission electron microscopy (TEM). The InAs QDs density is strongly increased from 108 to 1011 cm-2 at V/III ratios in the range of 15-35 (beam equivalent pressure values). InAs QD formations are not observed at temperatures of 500 °C and above. Growth experiments on (111) substrates show orientation dependent QD formation behaviour. A significant shape and size transition with elongated InAs quantum dots and dashes has been observed on (111) orientation and at higher Indium-growth rate of 0.3 ML/s. The 2D strain mapping derived from high-resolution TEM of InAs QDs embedded in silicon matrix confirmed semi-coherent and fully relaxed QDs embedded in defectfree silicon matrix. The strain relaxation is released by dislocation loops exclusively localized along the InAs/Si interfaces and partial dislocations with stacking faults inside the InAs clusters. The site controlled growth of GaAs/In0,15Ga0,85As/GaAs nanostructures has been demonstrated for the first time with 1 μm spacing and very low nominal deposition thicknesses, directly on pre-patterned Si without the use of SiO2 mask. Thin planar GaP layer was successfully grown through migration enhanced epitaxy (MEE) to initiate a planar GaP wetting layer at the polar/non-polar interface, which work as a virtual GaP substrate, for the GaP-MBE subsequently growth on the GaP-MEE layer with total thickness of 50 nm. The best root mean square (RMS) roughness value was as good as 1.3 nm. However, these results are highly encouraging for the realization of III-V optical devices on silicon for potential applications.

Magnetic interactions between transition metal impurities and clusters mediated by low-dimensional metallic hosts: A first principles theoretical investigation

The magnetic properties and interactions between transition metal (TM) impurities and clusters in low-dimensional metallic hosts are studied using a first principles theoretical method. In the first part of this work, the effect of magnetic order in 3d-5d systems is addressed from the perspective of its influence on the enhancement of the magnetic anisotropy energy (MAE). In the second part, the possibility of using external electric fields (EFs) to control the magnetic properties and interactions between nanoparticles deposited at noble metal surfaces is investigated. The influence of 3d composition and magnetic order on the spin polarization of the substrate and its consequences on the MAE are analyzed for the case of 3d impurities in one- and two-dimensional polarizable hosts. It is shown that the MAE and easy- axis of monoatomic free standing 3d-Pt wires is mainly determined by the atomic spin-orbit (SO) coupling contributions. The competition between ferromagnetic (FM) and antiferromagnetic (AF) order in FePtn wires is studied in detail for n=1-4 as a function of the relative position between Fe atoms. Our results show an oscillatory behavior of the magnetic polarization of Pt atoms as a function of their distance from the magnetic impurities, which can be correlated to a long-ranged magnetic coupling of the Fe atoms. Exceptionally large variations of the induced spin and orbital moments at the Pt atoms are found as a function of concentration and magnetic order. Along with a violation of the third Hund’s rule at the Fe sites, these variations result in a non trivial behavior of the MAE. In the case of TM impurities and dimers at the Cu(111), the effects of surface charging and applied EFs on the magnetic properties and substrate-mediated magnetic interactions have been investigated. The modifications of the surface electronic structure, impurity local moments and magnetic exchange coupling as a result of the EF-induced metallic screening and charge rearrangements are analysed. In a first study, the properties of surface substitutional Co and Fe impurities are investigated as a function of the external charge per surface atom q. At large inter-impurity distances the effective magnetic exchange coupling ∆E between impurities shows RKKY-like oscillations as a function of the distance which are not significantly affected by the considered values of q. For distances r < 10 Å, important modifications in the magnitude of ∆E, involving changes from FM to AF coupling, are found depending non-monotonously on the value and polarity of q. The interaction energies are analysed from a local perspective. In a second study, the interplay between external EF effects, internal magnetic order and substrate-mediated magnetic coupling has been investigated for Mn dimers on Cu(111). Our calculations show that EF (∼ 1eV/Å) can induce a switching from AF to FM ground-state magnetic order within single Mn dimers. The relative coupling between a pair of dimers also shows RKKY-like oscillations as a function of the inter-dimer distance. Their effective magnetic exchange interaction is found to depend significantly on the magnetic order within the Mn dimers and on their relative orientation on the surface. The dependence of the substrate-mediated interaction on the magnetic state of the dimers is qualitatively explained in terms of the differences in the scattering of surface electrons. At short inter-dimer distances, the ground-state configuration is determined by an interplay between exchange interactions and EF effects. These results demonstrate that external surface charging and applied EFs offer remarkable possibilities of manipulating the sign and strength of the magnetic coupling of surface supported nanoparticles.

First-principles electronic theory of non-collinear magnetic order in transition-metal nanowires

The structural, electronic and magnetic properties of one-dimensional 3d transition-metal (TM) monoatomic chains having linear, zigzag and ladder geometries are investigated in the frame-work of first-principles density-functional theory. The stability of long-range magnetic order along the nanowires is determined by computing the corresponding frozen-magnon dispersion relations as a function of the 'spin-wave' vector q. First, we show that the ground-state magnetic orders of V, Mn and Fe linear chains at the equilibrium interatomic distances are non-collinear (NC) spin-density waves (SDWs) with characteristic equilibrium wave vectors q that depend on the composition and interatomic distance. The electronic and magnetic properties of these novel spin-spiral structures are discussed from a local perspective by analyzing the spin-polarized electronic densities of states, the local magnetic moments and the spin-density distributions for representative values q. Second, we investigate the stability of NC spin arrangements in Fe zigzag chains and ladders. We find that the non-collinear SDWs are remarkably stable in the biatomic chains (square ladder), whereas ferromagnetic order (q =0) dominates in zigzag chains (triangular ladders). The different magnetic structures are interpreted in terms of the corresponding effective exchange interactions J(ij) between the local magnetic moments μ(i) and μ(j) at atoms i and j. The effective couplings are derived by fitting a classical Heisenberg model to the ab initio magnon dispersion relations. In addition they are analyzed in the framework of general magnetic phase diagrams having arbitrary first, second, and third nearest-neighbor (NN) interactions J(ij). The effect of external electric fields (EFs) on the stability of NC magnetic order has been quantified for representative monoatomic free-standing and deposited chains. We find that an external EF, which is applied perpendicular to the chains, favors non-collinear order in V chains, whereas it stabilizes the ferromagnetic (FM) order in Fe chains. Moreover, our calculations reveal a change in the magnetic order of V chains deposited on the Cu(110) surface in the presence of external EFs. In this case the NC spiral order, which was unstable in the absence of EF, becomes the most favorable one when perpendicular fields of the order of 0.1 V/Å are applied. As a final application of the theory we study the magnetic interactions within monoatomic TM chains deposited on graphene sheets. One observes that even weak chain substrate hybridizations can modify the magnetic order. Mn and Fe chains show incommensurable NC spin configurations. Remarkably, V chains show a transition from a spiral magnetic order in the freestanding geometry to FM order when they are deposited on a graphene sheet. Some TM-terminated zigzag graphene-nanoribbons, for example V and Fe terminated nanoribbons, also show NC spin configurations. Finally, the magnetic anisotropy energies (MAEs) of TM chains on graphene are investigated. It is shown that Co and Fe chains exhibit significant MAEs and orbital magnetic moments with in-plane easy magnetization axis. The remarkable changes in the magnetic properties of chains on graphene are correlated to charge transfers from the TMs to NN carbon atoms. Goals and limitations of this study and the resulting perspectives of future investigations are discussed.

Transport magnetischer Partikel durch maßgeschneiderte magnetische Feldlandschaften zur Anwendung in mikrofluidischen Mischprozessen

Die Miniaturisierung von konventioneller Labor- und Analysetechnik nimmt eine zentrale Rolle im Bereich der allgemeinen Lebenswissenschaften und medizinischen Diagnostik ein. Neuartige und preiswerte Technologieplattformen wie Lab-on-a-Chip (LOC) oder Mikrototalanalysesysteme (µTAS) versprechen insbesondere im Bereich der Individualmedizin einen hohen gesellschaftlichen Nutzen zur frühzeitigen und nichtinvasiven Diagnose krankheitsspezifischer Indikatoren. Durch den patientennahen Einsatz preiswerter und verlässlicher Mikrochips auf Basis hoher Qualitätsstandards entfallen kostspielige und zeitintensive Zentrallaboranalysen, was gleichzeitig Chancen für den globalen Einsatz - speziell in Schwellen- und Entwicklungsländern - bietet. Die technischen Herausforderungen bei der Realisierung moderner LOC-Systeme sind in der kontrollierten und verlässlichen Handhabung kleinster Flüssigkeitsmengen sowie deren diagnostischem Nachweis begründet. In diesem Kontext wird der erfolgreichen Integration eines fernsteuerbaren Transports von biokompatiblen, magnetischen Mikro- und Nanopartikeln eine Schlüsselrolle zugesprochen. Die Ursache hierfür liegt in der vielfältigen Einsetzbarkeit, die durch die einzigartigen Materialeigenschaften begründet sind. Diese reichen von der beschleunigten, aktiven Durchmischung mikrofluidischer Substanzvolumina über die Steigerung der molekularen Interaktionsrate in Biosensoren bis hin zur Isolation und Aufreinigung von krankheitsspezifischen Indikatoren. In der Literatur beschriebene Ansätze basieren auf der dynamischen Transformation eines makroskopischen, zeitabhängigen externen Magnetfelds in eine mikroskopisch veränderliche potentielle Energielandschaft oberhalb magnetisch strukturierter Substrate, woraus eine gerichtete und fernsteuerbare Partikelbewegung resultiert. Zentrale Kriterien, wie die theoretische Modellierung und experimentelle Charakterisierung der magnetischen Feldlandschaft in räumlicher Nähe zur Oberfläche der strukturierten Substrate sowie die theoretische Beschreibung der Durchmischungseffekte, wurden jedoch bislang nicht näher beleuchtet, obwohl diese essentiell für ein detailliertes Verständnis der zu Grunde liegenden Mechanismen und folglich für einen Markteintritt zukünftiger Geräte sind. Im Rahmen der vorgestellten Arbeit wurde daher ein neuartiger Ansatz zur erfolgreichen Integration eines Konzepts zum fernsteuerbaren Transport magnetischer Partikel zur Anwendung in modernen LOC-Systemen unter Verwendung von magnetisch strukturierten Exchange-Bias (EB) Dünnschichtsystemen verfolgt. Die Ergebnisse zeigen, dass sich das Verfahren der ionenbe-schussinduzierten magnetischen Strukturierung (IBMP) von EB-Systemen zur Herstellung von maßgeschneiderten magnetischen Feldlandschaften (MFL) oberhalb der Substratoberfläche, deren Stärke und räumlicher Verlauf auf Nano- und Mikrometerlängenskalen gezielt über die Veränderung der Materialparameter des EB-Systems via IBMP eingestellt werden kann, eignet. Im Zuge dessen wurden erstmals moderne, experimentelle Verfahrenstechniken (Raster-Hall-Sonden-Mikroskopie und rastermagnetoresistive Mikroskopie) in Kombination mit einem eigens entwickelten theoretischen Modell eingesetzt, um eine Abbildung der MFL in unterschiedlichen Abstandsbereichen zur Substratoberfläche zu realisieren. Basierend auf der quantitativen Kenntnis der MFL wurde ein neuartiges Konzept zum fernsteuerbaren Transport magnetischer Partikel entwickelt, bei dem Partikelgeschwindigkeiten im Bereich von 100 µm/s unter Verwendung von externen Magnetfeldstärken im Bereich weniger Millitesla erzielt werden können, ohne den magnetischen Zustand des Substrats zu modifizieren. Wie aus den Untersuchungen hervorgeht, können zudem die Stärke des externen Magnetfelds, die Stärke und der Gradient der MFL, das magnetfeldinduzierte magnetische Moment der Partikel sowie die Größe und der künstlich veränderliche Abstand der Partikel zur Substratoberfläche als zentrale Einflussgrößen zur quantitativen Modifikation der Partikelgeschwindigkeit genutzt werden. Abschließend wurde erfolgreich ein numerisches Simulationsmodell entwickelt, das die quantitative Studie der aktiven Durchmischung auf Basis des vorgestellten Partikeltransportkonzepts von theoretischer Seite ermöglicht, um so gezielt die geometrischen Gegebenheiten der mikrofluidischen Kanalstrukturen auf einem LOC-System für spezifische Anwendungen anzupassen.

Cooperative Physics of Fly Swarms: An Emergent Behavior

We have simulated the behavior of several artificial flies, interacting visually with each other. Each fly is described by a simple tracking system (Poggio and Reichardt, 1973; Land and Collett, 1974) which summarizes behavioral experiments in which individual flies fixate a target. Our main finding is that the interaction of theses implemodules gives rise to a variety of relatively complex behaviors. In particular, we observe a swarm-like behavior of a group of many artificial flies for certain reasonable ranges of our tracking system parameters.

High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD

The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. However, high In content in InGaN layers will result in a significant degradation of the crystalline quality of the epitaxial layers. In addition, unlike other III-V compound semiconductors, the ratio of gallium to indium incorporated in InGaN is in general not a simple function of the metal atomic flux ratio, f[subscript Ga]/f[subscript In]. Instead, In incorporation is complicated by the tendency of gallium to incorporate preferentially and excess In to form metallic droplets on the growth surface. This phenomenon can definitely affect the In distribution in the InGaN system. Scanning electron microscopy, room temperature photoluminescence, and X-ray diffraction techniques have been used to characterize InGaN layer grown on InN and InGaN buffers. The growth was done on c-plane sapphire by MOCVD. Results showed that green emission was obtained which indicates a relatively high In incorporation.

Oblique Angle Deposition of Germanium Film on Silicon Substrate

The effect of flux angle, substrate temperature and deposition rate on obliquely deposited germanium (Ge) films has been investigated. By carrying out deposition with the vapor flux inclined at 87° to the substrate normal at substrate temperatures of 250°C or 300°C, it may be possible to obtain isolated Ge nanowires. The Ge nanowires are crystalline as shown by Raman Spectroscopy.

Make progress with physics and chemistry. 'Haz progresos con física y química'.

Seleccionado en la convocatoria: Licencias por estudios destinadas a funcionarios docentes no universitarios, Gobierno de Aragón 2009-10

Methods of Math Physics

Lecture notes for a course on methods of mathematical physics.

Physics Information Skills

An introduction to high quality information resources and databases in Physics and related disciplines. Refers to resources of information and methods of searching them.

Physics video for AS/A Level Science & Art Competition

A video made by physics for the AS/A Level Science & Art Competition

AS/A Level Science & Art Competition: Particle Physics

A video made by physics for the AS/A Level Science & Art Competition

School of Physics and Astronomy Logo - Vector and Raster

Logo for the school of Physics and Astronomy in Inkscape SVG, PDF and high-resolution PNG format

Variety in Chemistry Education / Physics Higher Education Conference 2016 abstract submission.

Abstract submission form. More information available on conference website.

Convergencia de vías de señalización en un modelo de apoptosis

La sepsis es un evento inflamatorio generalizado del organismo inducido por un daño causado generalmente por un agente infeccioso. El patógeno más frecuentemente asociado con esta entidad es el Staphylococcus aureus, responsable de la inducción de apoptosis en células endoteliales debida a la producción de ceramida. Se ha descrito el efecto protector de la proteína C activada (PCA) en sepsis y su relación con la disminución de la apoptosis de las células endoteliales. En este trabajo se analizó la activación de las quinasas AKT, ASK1, SAPK/JNK y p38 en un modelo de apoptosis endotelial usando las técnicas de Western Blotting y ELISA. Las células endoteliales (EA.hy926), se trataron con C2-ceramida (130μM) en presencia de inhibidores químicos de cada una de estas quinasas y PCA. La supervivencia de las células en presencia de inhibidores químicos y PCA fue evaluada por medio de ensayos de activación de las caspasas 3, 7 y 9, que verificaban la muerte celular por apoptosis. Los resultados evidencian que la ceramida reduce la activación de AKT y aumenta la activación de las quinasas ASK, SAPK/JNK y p38, en tanto que PCA ejerce el efecto contrario. Adicionalmente se encontró que la tiorredoxina incrementa la activación/fosforilación de AKT, mientras que la quinasa p38 induce la defosforilación de AKT.