Silicon location through backscattered electron imaging and X-ray microanalysis in leaves of Cyperus ligularis L. and Rhynchospora aberrans C. B. Clarke (Cyperaceae)

(Silicon location through backscattered electron imaging and X-ray microanalysis in leaves of Cyperus ligularis L. and Rhynchospora aberrans C. B. Clarke (Cyperaceae)). The Cyperaceae show the ability to incorporate silicon by depositing colloidal silica, which is recorded by the occurrence of projections in the form of cones, in inner tangential walls of some epidermal cells or "silica cells". Leaves of C. ligularis and R. aberrans were analyzed through the technique of electron backscatter. Cyperus ligularis accumulates silica, in addition to "silica cells", in some stomata, trichomes and the cell walls that surround the cavities of the aerenchyma. The silica in the latter occurs in various forms; however, the cells located near the vascular bundles have conical projections, similar to those of the epidermis. Rhynchospora aberrans presents "silica cells" whose projections have tapered "satellites". In this species, silica also occurs in stomata and certain epidermal cells adjacent to them. It appears that the silicon deposition occurs in combination with the wall (with no apparent structural changes), and structures of secretion, or projections of the wall. These structural changes in the species, and location, are probably related to functional and environmental factors, especially the soil, in addition to relation with taxonomic groups.

Silicon(IV) phthalocyanine-loaded-nanoparticles for application in photodynamic process

The aim of this study was to evaluate the potential application of biodegradable nanoparticles containing a photosensitizer in photodynamic therapy. The poly (D,L lactic-co-glycolic acid) nanoparticles were studied by steady-state techniques, time-resolved fluorescence, and laser flash photolysis. The external morphology of the nanoparticles was established by scanning electron microscopy, and the biological activity was evaluated by in vitro cell culture by 3-(4,5 dimethylthiazol-2,5 biphenyl) tetrazolium bromide assay. The particles were spherical in shape exhibiting a 435 nm diameter with a low tendency to aggregate. The loading efficiency was 77%. The phthalocyanine-loaded-nanoparticles maintained their photophysical behavior after encapsulation. The cellular viability was determined, obtaining 70% of cellular death. All the performed physical-chemical, photophysical, and photobiological measurements indicated that the phthalocyanine-loaded-nanoparticles are a promising drug delivery system for photodynamic therapy and photoprocesses. (C) 2012 Laser Institute of America.

Sulfur Radicals as Tethers for the Adsorption of Aromatic Molecules on Silicon Surface

In this work we employ the state of the art pseudopotential method, within a generalized gradient approximation to the density functional theory, to investigate the adsorption process of benzenethiol and diphenyl disulfide with the silicon (001) surface. A direct comparison of different adsorption structures with Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) allow us to identify that benzenethiol and diphenyl disulfide dissociatively adsorb on the silicon surface. In addition, theoretically obtained data suggests that the C6H5SH:Si(001) presents a higher Schottky barrier height contact when compared to other similar aromatic molecules.

Ultra-low friction coefficient in alumina-silicon nitride pair lubricated with water

In a ball-on-disc wear test, an alumina ceramic body sliding against a silicon nitride ceramic body in water achieved an ultra-low friction coefficient (ULFC) of 0.004. The profilometer and EDX measurements indicated that the ULFC regime in this unmated Al2O3-Si3N4 pair was achieved because of the formation of a flat and smooth interface of nanometric roughness, which favored the hydrodynamic lubrication. The triboreactions formed silicon and aluminum hydroxides which contributed to decrease roughness and shear stress at the contact interface. This behavior enables the development of low energy loss water-based tribological systems using oxide ceramics. 13 2012 Elsevier B.V. All rights reserved.

Mixed-domain simulation and hybrid wafer-level packaging of RF-MEMS devices for wireless applications

In questa tesi verranno trattati sia il problema della creazione di un ambiente di simulazione a domini fisici misti per dispositivi RF-MEMS, che la definizione di un processo di fabbricazione ad-hoc per il packaging e l’integrazione degli stessi. Riguardo al primo argomento, sarà mostrato nel dettaglio lo sviluppo di una libreria di modelli MEMS all’interno dell’ambiente di simulazione per circuiti integrati Cadence c . L’approccio scelto per la definizione del comportamento elettromeccanico dei MEMS è basato sul concetto di modellazione compatta (compact modeling). Questo significa che il comportamento fisico di ogni componente elementare della libreria è descritto per mezzo di un insieme limitato di punti (nodi) di interconnessione verso il mondo esterno. La libreria comprende componenti elementari, come travi flessibili, piatti rigidi sospesi e punti di ancoraggio, la cui opportuna interconnessione porta alla realizzazione di interi dispositivi (come interruttori e capacità variabili) da simulare in Cadence c . Tutti i modelli MEMS sono implementati per mezzo del linguaggio VerilogA c di tipo HDL (Hardware Description Language) che è supportato dal simulatore circuitale Spectre c . Sia il linguaggio VerilogA c che il simulatore Spectre c sono disponibili in ambiente Cadence c . L’ambiente di simulazione multidominio (ovvero elettromeccanico) così ottenuto permette di interfacciare i dispositivi MEMS con le librerie di componenti CMOS standard e di conseguenza la simulazione di blocchi funzionali misti RF-MEMS/CMOS. Come esempio, un VCO (Voltage Controlled Oscillator) in cui l’LC-tank è realizzato in tecnologia MEMS mentre la parte attiva con transistor MOS di libreria sarà simulato in Spectre c . Inoltre, nelle pagine successive verrà mostrata una soluzione tecnologica per la fabbricazione di un substrato protettivo (package) da applicare a dispositivi RF-MEMS basata su vie di interconnessione elettrica attraverso un wafer di Silicio. La soluzione di packaging prescelta rende possibili alcune tecniche per l’integrazione ibrida delle parti RF-MEMS e CMOS (hybrid packaging). Verranno inoltre messe in luce questioni riguardanti gli effetti parassiti (accoppiamenti capacitivi ed induttivi) introdotti dal package che influenzano le prestazioni RF dei dispositivi MEMS incapsulati. Nel dettaglio, tutti i gradi di libertà del processo tecnologico per l’ottenimento del package saranno ottimizzati per mezzo di un simulatore elettromagnetico (Ansoft HFSSTM) al fine di ridurre gli effetti parassiti introdotti dal substrato protettivo. Inoltre, risultati sperimentali raccolti da misure di strutture di test incapsulate verranno mostrati per validare, da un lato, il simulatore Ansoft HFSSTM e per dimostrate, dall’altro, la fattibilit`a della soluzione di packaging proposta. Aldilà dell’apparente debole legame tra i due argomenti sopra menzionati è possibile identificare un unico obiettivo. Da un lato questo è da ricercarsi nello sviluppo di un ambiente di simulazione unificato all’interno del quale il comportamento elettromeccanico dei dispositivi RF-MEMS possa essere studiato ed analizzato. All’interno di tale ambiente, l’influenza del package sul comportamento elettromagnetico degli RF-MEMS può essere tenuta in conto per mezzo di modelli a parametri concentrati (lumped elements) estratti da misure sperimentali e simulazioni agli Elementi Finiti (FEM) della parte di package. Infine, la possibilità offerta dall’ambiente Cadence c relativamente alla simulazione di dipositivi RF-MEMS interfacciati alla parte CMOS rende possibile l’analisi di blocchi funzionali ibridi RF-MEMS/CMOS completi.

4H silicon carbide particle detectors: study of the defects induced by high energy neutron irradiation

During the last decade advances in the field of sensor design and improved base materials have pushed the radiation hardness of the current silicon detector technology to impressive performance. It should allow operation of the tracking systems of the Large Hadron Collider (LHC) experiments at nominal luminosity (1034 cm-2s-1) for about 10 years. The current silicon detectors are unable to cope with such an environment. Silicon carbide (SiC), which has recently been recognized as potentially radiation hard, is now studied. In this work it was analyzed the effect of high energy neutron irradiation on 4H-SiC particle detectors. Schottky and junction particle detectors were irradiated with 1 MeV neutrons up to fluence of 1016 cm-2. It is well known that the degradation of the detectors with irradiation, independently of the structure used for their realization, is caused by lattice defects, like creation of point-like defect, dopant deactivation and dead layer formation and that a crucial aspect for the understanding of the defect kinetics at a microscopic level is the correct identification of the crystal defects in terms of their electrical activity. In order to clarify the defect kinetic it were carried out a thermal transient spectroscopy (DLTS and PICTS) analysis of different samples irradiated at increasing fluences. The defect evolution was correlated with the transport properties of the irradiated detector, always comparing with the un-irradiated one. The charge collection efficiency degradation of Schottky detectors induced by neutron irradiation was related to the increasing concentration of defects as function of the neutron fluence.

Synthesis and characterization of implants for bone substitutions made of biomedical apatites containing silicon

In the last decades the development of bone substitutes characterized by a superior biomimetism has become of particular interest, owing to the increasing economic and societal impact of the bone diseases. In the present work of research the development of bone substitutes characterized by improved biomimetism, has been faced in a chemical, structural and morphological perspective. From a chemical point of view, it has been developed the synthesis of hydroxyapatite powders, exhibiting multiple ionic substitutions in both cationic and anionic sites, so to simulate the chemical composition of the natural bone. Particular emphasis has been given to the effect of silicon on the chemical-physical and solubility properties of the obtained hydroxyapatites. From a structural point of view, it has been developed the synthesis of ceramic composite materials, based on hydroxyapatite and calcium silicates, employed both as a reinforcing phase, to raise the mechanical strength of the composite compared to hydroxyapatite, and as a bioactive phase, able to increase the bioactivity properties of the whole ceramic. Finally the unique morphological features of the bone were mimicked by taking inspiration by Nature, so that native wood structures were treated in chemical and thermal way to obtain hydroxyapatite porous materials characterized by the same morphology as the native wood. The results obtained in the present work were positive in all the three different areas of investigation, so to cover the three different aspects of biomimetism, chemical, structural and morphological. Anyway, only at the convergence of the three different fields it is possible to find out the best solutions to develop the ideal bone-like scaffold. Thus, the future activity should be devoted to solve the problems at the borderline between the different research lines, which hamper this convergence and in consequence, the achievement of a bone scaffold able to mimic the various aspects exhibited by the bone tissue

Study of silicon-on-insulator multiple-gate MOS structures including band-gap engineering and self heating effects

The progresses of electron devices integration have proceeded for more than 40 years following the well–known Moore’s law, which states that the transistors density on chip doubles every 24 months. This trend has been possible due to the downsizing of the MOSFET dimensions (scaling); however, new issues and new challenges are arising, and the conventional ”bulk” architecture is becoming inadequate in order to face them. In order to overcome the limitations related to conventional structures, the researchers community is preparing different solutions, that need to be assessed. Possible solutions currently under scrutiny are represented by: • devices incorporating materials with properties different from those of silicon, for the channel and the source/drain regions; • new architectures as Silicon–On–Insulator (SOI) transistors: the body thickness of Ultra-Thin-Body SOI devices is a new design parameter, and it permits to keep under control Short–Channel–Effects without adopting high doping level in the channel. Among the solutions proposed in order to overcome the difficulties related to scaling, we can highlight heterojunctions at the channel edge, obtained by adopting for the source/drain regions materials with band–gap different from that of the channel material. This solution allows to increase the injection velocity of the particles travelling from the source into the channel, and therefore increase the performance of the transistor in terms of provided drain current. The first part of this thesis work addresses the use of heterojunctions in SOI transistors: chapter 3 outlines the basics of the heterojunctions theory and the adoption of such approach in older technologies as the heterojunction–bipolar–transistors; moreover the modifications introduced in the Monte Carlo code in order to simulate conduction band discontinuities are described, and the simulations performed on unidimensional simplified structures in order to validate them as well. Chapter 4 presents the results obtained from the Monte Carlo simulations performed on double–gate SOI transistors featuring conduction band offsets between the source and drain regions and the channel. In particular, attention has been focused on the drain current and to internal quantities as inversion charge, potential energy and carrier velocities. Both graded and abrupt discontinuities have been considered. The scaling of devices dimensions and the adoption of innovative architectures have consequences on the power dissipation as well. In SOI technologies the channel is thermally insulated from the underlying substrate by a SiO2 buried–oxide layer; this SiO2 layer features a thermal conductivity that is two orders of magnitude lower than the silicon one, and it impedes the dissipation of the heat generated in the active region. Moreover, the thermal conductivity of thin semiconductor films is much lower than that of silicon bulk, due to phonon confinement and boundary scattering. All these aspects cause severe self–heating effects, that detrimentally impact the carrier mobility and therefore the saturation drive current for high–performance transistors; as a consequence, thermal device design is becoming a fundamental part of integrated circuit engineering. The second part of this thesis discusses the problem of self–heating in SOI transistors. Chapter 5 describes the causes of heat generation and dissipation in SOI devices, and it provides a brief overview on the methods that have been proposed in order to model these phenomena. In order to understand how this problem impacts the performance of different SOI architectures, three–dimensional electro–thermal simulations have been applied to the analysis of SHE in planar single and double–gate SOI transistors as well as FinFET, featuring the same isothermal electrical characteristics. In chapter 6 the same simulation approach is extensively employed to study the impact of SHE on the performance of a FinFET representative of the high–performance transistor of the 45 nm technology node. Its effects on the ON–current, the maximum temperatures reached inside the device and the thermal resistance associated to the device itself, as well as the dependence of SHE on the main geometrical parameters have been analyzed. Furthermore, the consequences on self–heating of technological solutions such as raised S/D extensions regions or reduction of fin height are explored as well. Finally, conclusions are drawn in chapter 7.

The incomplete ionization of substitutional dopants in Silicon Carbide

This thesis analyzes theoretically and computationally the phenomenon of partial ionization of the substitutional dopants in Silicon Carbide at thermal equilibrium. It is based on the solution of the charge neutrality equation and takes into account the following phenomena: several energy levels in the bandgap; Fermi-Dirac statistics for free carriers; screening effects on the dopant ionization energies; the formation of impurity bands. A self-consistent model and a corresponding simulation software have been realized. A preliminary comparison of our calculations with existing experimental results is carried out.

Silicon-containing block copolymers with well-defined, branched architectures

In the past decade, block copolymers (BCPs) have attracted increasing scientific and technological interest because of their inherent capability to spontaneously self-assemble into ordered arrays of nanostructures. The importance of nanostructures in a number of applications has fostered the need for well-defined, complex macromolecular architectures. In this thesis, the influence of macromolecular architecture on the bulk morphologies of novel linear-hyperbranched and linear brush-like diblock copolymer structure is investigated. An innovative, generally applicable strategy for the preparation of these defined diblock copolymers, consisting of linear polystyrene and branched polycarbosilane blocks, is demonstrated. Furthermore, complete characterization and solid-state morphological studies are provided. Finally, the concept is extended to linear-hyperbrached and linear brush-like polyalkoxysilanes. A shift of the classical phase boundaries to higher PS weight fractions as well as the appearance of new morphologies confirms the dramatic effect that polymer topology has on the morphology of BCPs.

Advanced Numerical Simulation of Silicon-Based Solar Cells

Photovoltaic (PV) conversion is the direct production of electrical energy from sun without involving the emission of polluting substances. In order to be competitive with other energy sources, cost of the PV technology must be reduced ensuring adequate conversion efficiencies. These goals have motivated the interest of researchers in investigating advanced designs of crystalline silicon solar (c-Si) cells. Since lowering the cost of PV devices involves the reduction of the volume of semiconductor, an effective light trapping strategy aimed at increasing the photon absorption is required. Modeling of solar cells by electro-optical numerical simulation is helpful to predict the performance of future generations devices exhibiting advanced light-trapping schemes and to provide new and more specific guidelines to industry. The approaches to optical simulation commonly adopted for c-Si solar cells may lead to inaccurate results in case of thin film and nano-stuctured solar cells. On the other hand, rigorous solvers of Maxwell equations are really cpu- and memory-intensive. Recently, in optical simulation of solar cells, the RCWA method has gained relevance, providing a good trade-off between accuracy and computational resources requirement. This thesis is a contribution to the numerical simulation of advanced silicon solar cells by means of a state-of-the-art numerical 2-D/3-D device simulator, that has been successfully applied to the simulation of selective emitter and the rear point contact solar cells, for which the multi-dimensionality of the transport model is required in order to properly account for all physical competing mechanisms. In the second part of the thesis, the optical problems is discussed. Two novel and computationally efficient RCWA implementations for 2-D simulation domains as well as a third RCWA for 3-D structures based on an eigenvalues calculation approach have been presented. The proposed simulators have been validated in terms of accuracy, numerical convergence, computation time and correctness of results.

Numerical simulation of interdigitated back contact hetero-junction solar cells

The goal of this thesis is the application of an opto-electronic numerical simulation to heterojunction silicon solar cells featuring an all back contact architecture (Interdigitated Back Contact Hetero-Junction IBC-HJ). The studied structure exhibits both metal contacts, emitter and base, at the back surface of the cell with the objective to reduce the optical losses due to the shadowing by front contact of conventional photovoltaic devices. Overall, IBC-HJ are promising low-cost alternatives to monocrystalline wafer-based solar cells featuring front and back contact schemes, in fact, for IBC-HJ the high concentration doping diffusions are replaced by low-temperature deposition processes of thin amorphous silicon layers. Furthermore, another advantage of IBC solar cells with reference to conventional architectures is the possibility to enable a low-cost assembling of photovoltaic modules, being all contacts on the same side. A preliminary extensive literature survey has been helpful to highlight the specific critical aspects of IBC-HJ solar cells as well as the state-of-the-art of their modeling, processing and performance of practical devices. In order to perform the analysis of IBC-HJ devices, a two-dimensional (2-D) numerical simulation flow has been set up. A commercial device simulator based on finite-difference method to solve numerically the whole set of equations governing the electrical transport in semiconductor materials (Sentuarus Device by Synopsys) has been adopted. The first activity carried out during this work has been the definition of a 2-D geometry corresponding to the simulation domain and the specification of the electrical and optical properties of materials. In order to calculate the main figures of merit of the investigated solar cells, the spatially resolved photon absorption rate map has been calculated by means of an optical simulator. Optical simulations have been performed by using two different methods depending upon the geometrical features of the front interface of the solar cell: the transfer matrix method (TMM) and the raytracing (RT). The first method allows to model light prop-agation by plane waves within one-dimensional spatial domains under the assumption of devices exhibiting stacks of parallel layers with planar interfaces. In addition, TMM is suitable for the simulation of thin multi-layer anti reflection coating layers for the reduction of the amount of reflected light at the front interface. Raytracing is required for three-dimensional optical simulations of upright pyramidal textured surfaces which are widely adopted to significantly reduce the reflection at the front surface. The optical generation profiles are interpolated onto the electrical grid adopted by the device simulator which solves the carriers transport equations coupled with Poisson and continuity equations in a self-consistent way. The main figures of merit are calculated by means of a postprocessing of the output data from device simulation. After the validation of the simulation methodology by means of comparison of the simulation result with literature data, the ultimate efficiency of the IBC-HJ architecture has been calculated. By accounting for all optical losses, IBC-HJ solar cells result in a theoretical maximum efficiency above 23.5% (without texturing at front interface) higher than that of both standard homojunction crystalline silicon (Homogeneous Emitter HE) and front contact heterojuction (Heterojunction with Intrinsic Thin layer HIT) solar cells. However it is clear that the criticalities of this structure are mainly due to the defects density and to the poor carriers transport mobility in the amorphous silicon layers. Lastly, the influence of the most critical geometrical and physical parameters on the main figures of merit have been investigated by applying the numerical simulation tool set-up during the first part of the present thesis. Simulations have highlighted that carrier mobility and defects level in amorphous silicon may lead to a potentially significant reduction of the conversion efficiency.