An Error Free Passive UHF RFID System using a New Form of Wireless Signal Distribution

A wide area and error free ultra high frequency (UHF) radio frequency identification (RFID) interrogation system based on the use of multiple antennas used in cooperation to provide high quality ubiquitous coverage, is presented. The system uses an intelligent distributed antenna system (DAS) whereby two or more spatially separated transmit and receive antenna pairs are used to allow greatly improved multiple tag identification performance over wide areas. The system is shown to increase the read accuracy of 115 passive UHF RFID tags to 100% from <60% over a 10m x 8m open plan office area. The returned signal strength of the tag backscatter signals is also increased by an average of 10dB and 17dB over an area of 10m x 8m and 10m x 4m respectively. Furthermore, it is shown that the DAS RFID system has improved immunity to tag orientation. Finally, the new system is also shown to increase the tag read speed/rate of a population of tags compared with a conventional RFID system.

Demonstration of Improved Passive UHF RFID Coverage using Optically-Fed Distributed Multi-Antenna System

Optically-fed distributed antenna system (DAS) technology is combined with passive ultra high frequency (UHF) radio frequency identification (RFID). It is shown that RFID signals can be carried on directly modulated radio over fiber links without impacting their performance. It is also shown that a multi-antenna DAS can greatly reduce the number of nulls experienced by RFID in a complex radio environment, increasing the likelihood of successful tag detection. Consequently, optimization of the DAS reduces nulls further. We demonstrate RFID tag reading using a three antenna DAS system over a 20mx6m area, limited by building constraints, where 100% of the test points can be successfully read. The detected signal strength from the tag is also observed to increase by an average of approximately 10dB compared with a conventional switched multi-antenna RFID system. This improvement is achieved at +31dBm equivalent isotropically radiated power (EIRP) from all three antenna units (AUs).

A Novel Passive UHF RFID Real Time Location Sensing System

Ubiquitous in-building Real Time Location Systems (RTLS) today are limited by costly active radio frequency identification (RFID) tags and short range portal readers of low cost passive RFID tags. We, however, present a novel technology locates RFID tags using a new approach based on (a) minimising RFID fading using antenna diversity, frequency dithering, phase dithering and narrow beam-width antennas, (b) measuring a combination of RSSI and phase shift in the coherent received tag backscatter signals and (c) being selective of use of information from the system by, applying weighting techniques to minimise error. These techniques make it possible to locate tags to an accuracy of less than one metre. This breakthrough will enable, for the first time, the low-cost tagging of items and the possibility of locating them at relatively high precision.

Passive UHF RFID Interrogation System Using Wireless RFID Repeater Nodes

This paper presents a new wireless radio frequency identification (RFID) repeater system, facilitating remote interrogation without the need for arrays of wired antennas, despite using entirely passive, low-cost ultra high frequency (UHF) RFID tags. The proposed system comprises a master RFID reader with both transmit and receive functions, and multiple RFID repeaters to receive, amplify and retransmit tag-to-reader and reader-to-tag communications. This expands the area over which the master RFID reader may provide coverage for a given maximum transmit power at each antenna. We first demonstrate a single hop wireless repeater system to allow similar read performance to a standard commercial passive UHF RFID reader. Finally, a proof of principle system demonstrates that a single wireless repeater node can allow an extension in range.

Enforcing RFID data visibility restrictions using XACML security policies

Radio Frequency Identification (RFID) technology allows automatic data capture from tagged objects moving in a supply chain. This data can be very useful if it is used to answer traceability queries, however it is distributed across many different repositories, owned by different companies. © 2012 IEEE.

Concentration dependence of the Er3+ visible and infrared luminescence in Y2-x Erx O3 thin films on Si

Y2-x Erx O3 thin films, with x varying between 0 and 0.72, have been successfully grown on crystalline silicon (c-Si) substrates by radio-frequency magnetron cosputtering of Y2 O 3 and Er2 O3 targets. As-deposited films are polycrystalline, showing the body-centered cubic structure of Y2 O3, and show only a slight lattice parameter contraction when x is increased, owing to the insertion of Er ions. All the films exhibit intense Er-related optical emission at room temperature both in the visible and infrared regions. By studying the optical properties for different excitation conditions and for different Er contents, all the mechanisms (i.e., cross relaxations, up-conversions, and energy transfers to impurities) responsible for the photoluminescence (PL) emission have been identified, and the existence of two different well-defined Er concentration regimes has been demonstrated. In the low concentration regime (x up to 0.05, Er-doped regime), the visible PL emission reaches its highest intensity, owing to the influence of up-conversions, thus giving the possibility of using Y2-x Er x O3 films as an up-converting layer in the rear of silicon solar cells. However, most of the excited Er ions populate the first two excited levels 4I11/2 and 4I13/2, and above a certain excitation flux a population inversion condition between the former and the latter is achieved, opening the route for the realization of amplifiers at 2.75 μm. Instead, in the high concentration regime (Er-compound regime), an increase in the nonradiative decay rates is observed, owing to the occurrence of cross relaxations or energy transfers to impurities. As a consequence, the PL emission at 1.54 μm becomes the most intense, thus determining possible applications for Y2-x Erx O 3 as an infrared emitting material. © 2009 American Institute of Physics.

Structuring technological information for technology roadmapping: Data mining approach

Most research on technology roadmapping has focused on its practical applications and the development of methods to enhance its operational process. Thus, despite a demand for well-supported, systematic information, little attention has been paid to how/which information can be utilised in technology roadmapping. Therefore, this paper aims at proposing a methodology to structure technological information in order to facilitate the process. To this end, eight methods are suggested to provide useful information for technology roadmapping: summary, information extraction, clustering, mapping, navigation, linking, indicators and comparison. This research identifies the characteristics of significant data that can potentially be used in roadmapping, and presents an approach to extracting important information from such raw data through various data mining techniques including text mining, multi-dimensional scaling and K-means clustering. In addition, this paper explains how this approach can be applied in each step of roadmapping. The proposed approach is applied to develop a roadmap of radio-frequency identification (RFID) technology to illustrate the process practically. © 2013 © 2013 Taylor & Francis.

Experimental demonstration of a transparent graphene millimetre wave absorber with 28% fractional bandwidth at 140 GHz.

The development of transparent radio-frequency electronics has been limited, until recently, by the lack of suitable materials. Naturally thin and transparent graphene may lead to disruptive innovations in such applications. Here, we realize optically transparent broadband absorbers operating in the millimetre wave regime achieved by stacking graphene bearing quartz substrates on a ground plate. Broadband absorption is a result of mutually coupled Fabry-Perot resonators represented by each graphene-quartz substrate. An analytical model has been developed to predict the absorption performance and the angular dependence of the absorber. Using a repeated transfer-and-etch process, multilayer graphene was processed to control its surface resistivity. Millimetre wave reflectometer measurements of the stacked graphene-quartz absorbers demonstrated excellent broadband absorption of 90% with a 28% fractional bandwidth from 125-165 GHz. Our data suggests that the absorbers' operation can also be extended to microwave and low-terahertz bands with negligible loss in performance.

A Fully Integrated 900-MHz Passive RFID Transponder Front End With Novel Zero-Threshold RF-DC Rectifier

This paper presents a fully integrated CMOS analog front end for a passive 900-MHz radio-frequency identification (RFID) transponder. The power supply in this front end is generated from the received RF electromagnetic energy by using an RF-dc voltage rectifier. In order to improve the compatibility with standard CMOS technology, Schottky diodes in conventional RF-dc rectifiers are replaced by diode-connected MOS transistors with zero threshold. Meanwhile, theoretical analyses for the proposed rectifier are provided and verified by both simulation and measurement results. The design considerations of the pulsewidth-modulation (PWM) demodulator and the backscatter modulator in the front end are also discussed for low-power applications. The proposed front end is implemented in a 0.35-mu m 2P4M CMOS technology. The whole chip occupies a die area of 490 x 780 mu m(2) and consumes only 2.1 mu W in reading mode under a self-generated 1.5-V supply voltage. The measurement results show that the proposed rectifier can properly operate with a - 14.7-dBm input RF power at a power conversion efficiency of 13.0%. In the proposed RFID applications, this sensitivity corresponds to 10.88-m communication distance at 4-W equivalent isotropically radiated power from a reader base station.

High-performance evanescently-coupled uni-traveling-carrier photodiodes

A new evanescently-coupled uni-traveling-carrier photodiode (EC-UTC PD) based on a multimode diluted waveguide (MDW) structure is fabricated, analysed and characterized. Optical and electrical characteristics of the device are investigated. The excellent characteristics are demonstrated such as a responsivity of 0.36 A/W, a bandwidth of 11.5 GHz and a small-signal 1-dB compression current greater than 18 mA at 10 GHz. The saturation current is significantly improved compared with those of similar evanescently-coupled pin photodiodes. The radio frequency (RF) bandwidth can be further improved by eliminating RF losses induced by the cables, the probe and the bias tee between the photodiode and the spectrum analyzer.

Epitaxial Growth of AlInGaN Quaternary Alloys by RF-MBE

AlInGaN quaternary alloys were successfully grown on sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy (RF-MBE). AlInGaN quaternary alloys with different compositions were acquired by changing the Al cell's temperature. The streaky RHEED patterns were observed during AlInGaN quaternary alloys growth. Scanning Electron Microscope (SEM), Rutherford back-scattering spectrometry (RBS), X-Ray diffraction (XRD) and Cathodoluminescence (CL) were used to characterize the structural and optical properties of the AlInGaN alloys. The experimental results show that the AlInGaN quaternary alloys grow on the GaN buffer in the layer-by-layer growth mode. When the Al cell's temperature is 920 degrees C, the Al/In ratio in the AlInGaN quaternary alloys is about 4.7, and the AlInGaN can acquire better crystal and optical quality. The X-ray and CL full-width at half-maximum (FWHM) of the AlInGaN are 5arcmin and 25nm, respectively.

Lossless electroabsorption modulator monolithically rntegrated with a semiconductor optical amplifier and dual-wavegulde spot-size converters

Semiconductor optical amplifier and electroabsorption modulator monolithically integrated with dual-waveguide spot-size converters at the input and output ports is demonstrated by means of selective area growth, quantum-well intermixing, and asymmetric twin waveguide technologies. At the wavelength range of 1550 similar to 1600 nm, lossless operation with extinction ratios of 25-dB dc and 11.8-dB radio frequency and more than 10-GHz 3-dB modulation bandwidth is successfully achieved. The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3 degrees x 10.6 degrees, respectively, resulting in 3.0-dB coupling loss with cleaved single-mode optical fiber.

Growth and characterization of InN on sapphire substrate by RF-MBE

Indium nitride (InN) films were grown on sapphire substrates by radio-frequency plasma-excited molecular beam epitaxy (RF-MBE). Atomic force microscopy (AFM), reflection high-energy electron diffraction (RHEED), double-crystal X-ray diffraction (DCXRD) and photoluminescence (PL) spectroscopy were used to characterize the InN films. The results show that the InN films have good crystallinity, with full-width at half-maximum (FWHM) of InN (0 0 0 2) DCXRD peak being 14 arcmin. At room temperature, a strong PL peak at 0.79eV was observed. At 1.9eV or so, no peak was observed. In addition, it is found that the InN films grown with low-temperature (LT) InN buffer layer are of better quality than those without LT-InN buffer layer. (c) 2004 Elsevier B.V. All rights reserved.

Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 mu m grown by molecular beam epitaxy

The InGaNAs(Sb)/(GaNAs)/GaAs quantum wells (QWs) emitting at 1.3-1.55 mu m have been grown by molecular beam epitaxy (MBE). The parameters of the radio frequency (RF) such as RF power and flow rate are optimized to reduce the damages from the ions or energetic species. The growth temperature is carefully controlled to prevent the phase segregation and strain relaxation. The effects of Sb on the wavelength and quality are investigated. The GaNAs barrier is used to extend the wavelength and reduce the strain. A 1.5865 mu m InGaNAs(Sb)/GaNAs SQW edge emitting laser lasing at room temperature at continuous wave operation mode is demonstrated. (c) 2006 Elsevier B.V. All rights reserved.

The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE

High-Al-content InxAlyGa1-x-yN (x = 1-10%, y = 34-45%) quaternary alloys were grown on sapphire by radio-frequency plasma-excited molecular beam epitaxy. Rutherford back-scattering spectrometry, high resolution x-ray diffraction and cathodoluminescence were used to characterize the InAlGaN alloys. The experimental results show that InAlGaN with an appropriate Al/In ratio (near 4.7, which is a lattice-match to the GaN under-layer) has better crystal and optical quality than the InAlGaN alloys whose Al/In ratios are far from 4.7. Some cracks and V-defects occur in high-Al/In-ratio InAlGaN alloys. In the CL image, the cracks and V-defect regions are the emission-enhanced regions.