Highly-effective gating of single-molecule junctions: an electrochemical approach

We report an electrochemical gating approach with [similar]100% efficiency to tune the conductance of single-molecule 4,4′-bipyridine junctions using scanning-tunnelling-microscopy break junction technique. Density functional theory calculation suggests that electrochemical gating aligns molecular frontier orbitals relative to the electrode Fermi-level, switching the molecule from an off resonance state to “partial” resonance.

The Synthesis of Functionalised Diaryltetraynes and Their Transport Properties in Single-Molecule Junctions

The synthesis and characterisation is described of six diaryltetrayne derivatives [Ar-(C[TRIPLE BOND]C)4-Ar] with Ar=4-NO2-C6H4- (NO24), 4-NH(Me)C6H4- (NHMe4), 4-NMe2C6H4- (NMe24), 4-NH2-(2,6-dimethyl)C6H4- (DMeNH24), 5-indolyl (IN4) and 5-benzothienyl (BTh4). X-ray molecular structures are reported for NO24, NHMe4, DMeNH24, IN4 and BTh4. The stability of the tetraynes has been assessed under ambient laboratory conditions (20 °C, daylight and in air): NO24 and BTh4 are stable for at least six months without observable decomposition, whereas NHMe4, NMe24, DMeNH24 and IN4 decompose within a few hours or days. The derivative DMeNH24, with ortho-methyl groups partially shielding the tetrayne backbone, is considerably more stable than the parent compound with Ar=4-NH2C6H4 (NH24). The ability of the stable tetraynes to anchor in Au|molecule|Au junctions is reported. Scanning-tunnelling-microscopy break junction (STM-BJ) and mechanically controllable break junction (MCBJ) techniques are employed to investigate single-molecule conductance characteristics.

Supersymmetric quantum mechanics on the lattice: III. Simulations and algorithms

In the fermion loop formulation the contributions to the partition function naturally separate into topological equivalence classes with a definite sign. This separation forms the basis for an efficient fermion simulation algorithm using a fluctuating open fermion string. It guarantees sufficient tunnelling between the topological sectors, and hence provides a solution to the fermion sign problem affecting systems with broken supersymmetry. Moreover, the algorithm shows no critical slowing down even in the massless limit and can hence handle the massless Goldstino mode emerging in the supersymmetry broken phase. In this paper – the third in a series of three – we present the details of the simulation algorithm and demonstrate its efficiency by means of a few examples.

Influencia de la capacidad de la vasija sobre la fermentación

De acuerdo con los resultados obtenidos, trabajando en la forma corriente en nuestras bodegas, analíticamente los vinos fermentados en grandes vasijas, no presentan diferencias significativas, comparados con los elaborados en envases pequeños. Tal conclusión se ve confirmada teóricamente en base al estudio de las posibles causas de una disminución del rendimiento en alcohol. Económicamente se debe estudiar comparativamente el costo de la elaboración en vasija grande y en vasija chica con movimiento del líquido y orujo mecanizado, a fin de determinar cual es mas aconsejable, dado que técnicamente se debe preferir el envase pequeño.

Farming strategy of African smallholder farmers in transition from traditional to alternative agriculture : the case of the Nupe in central Nigeria

It is worthwhile to understand farming strategies of smallholder farmers in sub-Saharan Africa, especially those of farmers who are in transition from traditional to alternative agriculture in terms of adoption of innovative technologies. In a case study of inland valleys in central Nigeria, we investigated the farming strategy of Nupe farmers who have a long-term tradition of wet rice cultivation and indigenous methods of land preparation for soil, water and weed management. In this region, a new method of land preparation has recently been introduced along with a recommendation to use improved seeds and chemical fertilizers. Our findings reveal that Nupe farmers directly sow traditional seeds and apply a marginal amount of fertilizer to paddy plots prepared by labor-saving methods on drought-prone hydromorphic valley fringes and flood-susceptible valley bottoms, whereas they preferentially transplanted improved seedlings and applied a relatively large quantity of fertilizer to paddy fields prepared by a labor-intensive and mechanized method on a valley position where they can access to optimum water condition (less risky against the drought and flood).

Transport properties of CuGaSe(2)-based thin-film solar cells as a function of absorber composition

The transport properties of thin-film solar cells based on wide-gap CuGaSe(2) absorbers have been investigated as a function of the bulk [Ga]/[Cu] ratio ranging from 1.01 to 1.33. We find that (i) the recombination processes in devices prepared from absorbers with a composition close to stoichiometry ([Ga]/[Cu] = 1.01) are strongly tunnelling assisted resulting in low recombination activation energies (E(a)) of approx. 0.95 eV in the dark and 1.36 eV under illumination. (ii) With an increasing [Ga]/[Cu] ratio, the transport mechanism changes to be dominated by thermally activated Shockley-Read-Hall recombination with similar E(a) values of approx. 1.52-1.57 eV for bulk [Ga]/[Cu] ratios of 1.12-1.33. The dominant recombination processes take place at the interface between CdS buffer and CuGaSe(2) absorber independently from the absorber composition. The increase of E(a) with the [Ga]/[Cu] ratio correlates with the open circuit voltage and explains the better performance of corresponding solar cells.

Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substrates

We investigated the atomic surface properties of differently prepared silicon and germanium (100) surfaces during metal-organic vapour phase epitaxy/chemical vapour deposition (MOVPE/MOCVD), in particular the impact of the MOVPE ambient, and applied reflectance anisotropy/difference spectroscopy (RAS/RDS) in our MOVPE reactor to in-situ watch and control the preparation on the atomic length scale for subsequent III-V-nucleation. The technological interest in the predominant opto-electronic properties of III-V-compounds drives the research for their heteroepitaxial integration on more abundant and cheaper standard substrates such as Si(100) or Ge(100). In these cases, a general task must be accomplished successfully, i.e. the growth of polar materials on non-polar substrates and, beyond that, very specific variations such as the individual interface formation and the atomic step structure, have to be controlled. Above all, the method of choice to grow industrial relevant high-performance device structures is MOVPE, not normally compatible with surface and interface sensitive characterization tools, which are commonly based on ultrahigh vacuum (UHV) ambients. A dedicated sample transfer system from MOVPE environment to UHV enabled us to benchmark the optical in-situ spectra with results from various surfaces science instruments without considering disruptive contaminants. X-ray photoelectron spectroscopy (XPS) provided direct observation of different terminations such as arsenic and phosphorous and verified oxide removal under various specific process parameters. Absorption lines in Fourier-transform infrared (FTIR) spectra were used to identify specific stretch modes of coupled hydrides and the polarization dependence of the anti-symmetric stretch modes distinguished different dimer orientations. Scanning tunnelling microscopy (STM) studied the atomic arrangement of dimers and steps and tip-induced H-desorption proved the saturation of dangling bonds after preparati- n. In-situ RAS was employed to display details transiently such as the presence of H on the surface at lower temperatures (T <; 800°C) and the absence of Si-H bonds at elevated annealing temperature and also surface terminations. Ge buffer growth by the use of GeH4 enables the preparation of smooth surfaces and leads to a more pronounced amplitude of the features in the spectra which indicates improvements of the surface quality.

Agronomic performance of Graciano, Petit verdot and Tempranillo grapevine cultivars (Vitis vinífera L.) under two water regimes.

Fort the last decades Spanish vineyard has experience a deep transformation by allowing irrigation, changing the traditional bush into a possible full mechanized VSP and cultivar changing map was also took into account. Tempranillo has led the change to replace the white grapevines, such as in La Mancha; however results in these warm areas were not as expect. Under this conditions, low yield, low acidity and uncouple sacharimetric and phenol maturity usually is obtained. Within this frame an experimental trial was set up with the goal to know other cultivars that could better perform than Tempranillo in warm areas in a sustainable viticulture.

Size, strain, and band offset engineering in GaAs(Sb)(N)-capped InAs quantum dots for 1.3 - 1.55 µm LEDs and LDs

The optical and structural properties of InAs/GaAs quantum dots (QD) are strongly modified through the use of a thin (~ 5 nm) GaAsSb(N) capping layer. In the case of GaAsSb-capped QDs, cross-sectional scanning tunnelling microscopy measurements show that the QD height can be controllably tuned through the Sb content up to ~ 14 % Sb. The increased QD height (together with the reduced strain) gives rise to a strong red shift and a large enhancement of the photoluminescence (PL) characteristics. This is due to improved carrier confinement and reduced sensitivity of the excitonic bandgap to QD size fluctuations within the ensemble. Moreover, the PL degradation with temperature is strongly reduced in the presence of Sb. Despite this, emission in the 1.5 !lm region with these structures is only achieved for high Sb contents and a type-II band alignment that degrades the PL. Adding small amounts of N to the GaAsSb capping layer allows to progressively reduce the QD-barrier conduction band offset. This different strategy to red shift the PL allows reaching 1.5 !lm with moderate Sb contents, keeping therefore a type-I alignment. Nevertheless, the PL emission is progressively degraded when the N content in the capping layer is increased

Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics

An n(++)-GaAs/p(++)-AlGaAs tunnel junction with a peak current density of 10 100Acm(-2) is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current density ever reported. The voltage drop for a current density equivalent to the operation of the multijunction solar cell up to 10 000 suns is below 5 mV. Trap-assisted tunnelling is proposed to be behind this performance, which cannot be justified by simple band-to-band tunnelling. The metal-organic vapour-phase epitaxy growth conditions, which are in the limits of the transport-limited regime, and the heavy tellurium doping levels are the proposed origins of the defects enabling trap-assisted tunnelling. The hypothesis of trap-assisted tunnelling is supported by the observed annealing behaviour of the tunnel junctions, which cannot be explained in terms of dopant diffusion or passivation. For the integration of these tunnel junctions into a triple-junction solar cell, AlGaAs barrier layers are introduced to suppress the formation of parasitic junctions, but this is found to significantly degrade the performance of the tunnel junctions. However, the annealed tunnel junctions with barrier layers still exhibit a peak current density higher than 2500Acm(-2) and a voltage drop at 10 000 suns of around 20 mV, which are excellent properties for tunnel junctions and mean they can serve as low-loss interconnections in multijunction solar cells working at ultra-high concentrations.

Análisis de la influencia de distintos diseños de paraguas de micropilotes, pantalla de micropilotes, paraguas de jet grouting y pantallas de jet grouting en los asientos en superficie durante la ejecución de túneles perforados superficialmente

Ya en el informe acerca del estado de la tecnología en la excavación profunda y en la construcción de túneles en terreno duro presentado en la 7ª Conferencia en Mecánica de Suelos e Ingeniería de la Cimentación, Peck (1969) introdujo los tres temas a ser tenidos en cuenta para el diseño de túneles en terrenos blandos: o Estabilidad de la cavidad durante la construcción, con particular atención a la estabilidad del frente del túnel; o Evaluación de los movimientos del terreno inducidos por la construcción del túnel y de la incidencia de los trabajos subterráneos a poca profundidad sobre los asentamientos en superficie; o Diseño del sistema de sostenimiento del túnel a instalar para asegurar la estabilidad de la estructura a corto y largo plazo. Esta Tesis se centra en los problemas señalados en el segundo de los puntos, analizando distintas soluciones habitualmente proyectadas para reducir los movimientos inducidos por la excavación de los túneles. El objeto de la Tesis es el análisis de la influencia de distintos diseños de paraguas de micropilotes, pantalla de micropilotes, paraguas de jet grouting y pantallas de jet grouting en los asientos en superficie durante la ejecución de túneles ejecutados a poca profundidad, con objeto de buscar el diseño que optimice los medios empleados para una determinada reducción de asientos. Para ello se establecen unas premisas para los proyectistas con objeto de conocer a priori cuales son los tratamientos más eficientes (de los propuestos en la Tesis) para la reducción de asientos en superficie cuando se ha de proyectar un túnel, de tal manera que pueda tener datos cualitativos y algunos cuantitativos sobre los diseños más óptimos, utilizando para ello un programa de elementos finitos de última generación que permite realizara la simulación tensodeformación del terreno mediante el modelo de suelo con endurecimiento (Hardening Soil Small model), que es una variante elastoplástica del modelo hiperbólico, similar al Hardening Soil Model. Además, este modelo incorpora una relación entre deformación y el modulo de rigidez, simulando el diferente comportamiento del suelo para pequeñas deformaciones (por ejemplo vibraciones con deformaciones por debajo de 10-5 y grandes deformaciones (deformaciones > 10-3). Para la realización de la Tesis se han elegido cinco secciones de túnel, dos correspondiente a secciones tipo de túnel ejecutado con tuneladora y tres secciones ejecutados mediante convencionales (dos correspondientes a secciones que han utilizado el método Belga y una que ha utilizado el NATM). Para conseguir los objetivos marcados, primeramente se ha analizado mediante una correlación entre modelos tridimensionales y bidimensionales el valor de relajación usado en estos últimos, y ver su variación al cambio de parámetros como la sección del túnel, la cobertera, el procedimiento constructivo, longitud de pase (métodos convencionales) o presión del frente (tuneladora) y las características geotécnicas de los materiales donde se ejecuta el túnel. Posteriormente se ha analizado que diseño de pantalla de protección tiene mejor eficacia respecto a la reducción de asientos, variando distintos parámetros de las características de la misma, como son el empotramiento, el tipo de micropilotes o pilote, la influencia del arriostramiento de las pantallas de protección en cabeza, la inclinación de la pantalla, la separación de la pantalla al eje del túnel y la disposición en doble fila de la pantalla de pantalla proyectada. Para finalizar el estudio de la efectividad de pantalla de protección para la reducción de asiento, se estudiará la influencia de la sobrecarga cercanas (simulación de edificios) tiene en la efectividad de la pantalla proyectada (desde el punto de vista de reducción de movimientos en superficie). Con objeto de poder comparar la efectividad de la pantalla de micropilotes respecto a la ejecución de un paraguas de micropilotes se ha analizado distintos diseños de paraguas, comparando el movimiento obtenido con el obtenido para el caso de pantalla de micropilotes, comparando ambos resultados con los medidos en obras ya ejecutadas. En otro apartado se ha realizado una comparación entre tratamientos similar, comparándolos en este caso con un paraguas de jet grouting y pantallas de jet grouting. Los resultados obtenidos se han con valores de asientos medidos en distintas obras ya ejecutadas y cuyas secciones se corresponden a los empleados en los modelos numéricos. Since the report on the state of technology in deep excavation and tunnelling in hard ground presented at the 7th Conference on Soil Mechanics and Foundation Engineering, Peck (1969) introduced the three issues to be taken into account for the design of tunnels in soft ground: o Cavity Stability during construction, with particular attention to the stability of the tunnel face; o Evaluation of ground movements induced by tunnelling and the effect of shallow underground workings on surface settlement; o Design of the tunnel support system to be installed to ensure short and long term stability of the structure. This thesis focuses on the issues identified in the second point, usually analysing different solutions designed to reduce the movements induced by tunnelling. The aim of the thesis is to analyse the influence of different micropile forepole umbrellas, micropile walls, jet grouting umbrellas and jet grouting wall designs on surface settlements during near surface tunnelling in order to use the most optimal technique to achieve a determined reduction in settlement. This will establish some criteria for designers to know a priori which methods are most effective (of those proposed in the thesis) to reduce surface settlements in tunnel design, so that it is possible to have qualitative and some quantitative data on the optimal designs, using the latest finite element modelling software that allows simulation of the ground’s infinitesimal strain behaviour using the Hardening Soil Small Model, which is a variation on the elasto-plastic hyperbolic model, similar to Hardening Soil model. In addition, this model incorporates a relationship between strain and the rigidity modulus, simulating different soil behaviour for small deformations (eg deformation vibrations below 10-5 and large deformations (deformations > 10-3). For the purpose of this thesis five tunnel sections have been chosen, two sections corresponding to TBM tunnels and three sections undertaken by conventional means (two sections corresponding to the Belgian method and one corresponding to the NATM). To achieve the objectives outlined, a correlation analysis of the relaxation values used in the 2D and 3D models was undertaken to verify them against parameters such as the tunnel cross-section, the depth of the tunnel, the construction method, the length of step (conventional method) or face pressure (TBM) and the geotechnical characteristics of the ground where the tunnel is constructed. Following this, the diaphragm wall design with the greatest efficiency regarding settlement reduction was analysed, varying parameters such as the toe depth, type of micropiles or piles, the influence of bracing of the head protection diaphragm walls, the inclination of the diaphragm wall, the separation between the diaphragm wall and the tunnel axis and the double diaphragm wall design arrangement. In order to complete the study into the effectiveness of protective diaphragm walls ofn the reduction of settlements, the influence of nearby imposed loads (simulating buildings) on the effectiveness of the designed diaphragm walls (from the point of view of reducing surface movements) will be studied. In order to compare the effectiveness of micropile diaphragm walls regarding the installation of micropile forepole umbrellas, different designs of these forepole umbrellas have been analysed comparing the movement obtained with that obtained for micropiled diaphragm walls, comparing both results with those measured from similar completed projects. In another section, a comparison between similar treatments has been completed, comparing the treatments with a forepole umbrella by jet grouting and jet grouting walls. The results obtained compared with settlement values measured in various projects already completed and whose sections correspond to those used in the numerical models.

Analysis of the modified optical properties and band structure of GaAs12xSbx-capped InAs/GaAs quantum dots

The origin of the modified optical properties of InAs/GaAs quantum dots (QD) capped with a thin GaAs1−xSbx layer is analyzed in terms of the band structure. To do so, the size, shape, and composition of the QDs and capping layer are determined through cross-sectional scanning tunnelling microscopy and used as input parameters in an 8 × 8 k·p model. As the Sb content is increased, there are two competing effects determining carrier confinement and the oscillator strength: the increased QD height and reduced strain on one side and the reduced QD-capping layer valence band offset on the other. Nevertheless, the observed evolution of the photoluminescence (PL) intensity with Sb cannot be explained in terms of the oscillator strength between ground states, which decreases dramatically for Sb > 16%, where the band alignment becomes type II with the hole wavefunction localized outside the QD in the capping layer. Contrary to this behaviour, the PL intensity in the type II QDs is similar (at 15 K) or even larger (at room temperature) than in the type I Sb-free reference QDs. This indicates that the PL efficiency is dominated by carrier dynamics, which is altered by the presence of the GaAsSb capping layer. In particular, the presence of Sb leads to an enhanced PL thermal stability. From the comparison between the activation energies for thermal quenching of the PL and the modelled band structure, the main carrier escape mechanisms are suggested. In standard GaAs-capped QDs, escape of both electrons and holes to the GaAs barrier is the main PL quenching mechanism. For small-moderate Sb (<16%) for which the type I band alignment is kept, electrons escape to the GaAs barrier and holes escape to the GaAsSb capping layer, where redistribution and retraping processes can take place. For Sb contents above 16% (type-II region), holes remain in the GaAsSb layer and the escape of electrons from the QD to the GaAs barrier is most likely the dominant PL quenching mechanism. This means that electrons and holes behave dynamically as uncorrelated pairs in both the type-I and type-II structures.

Mechanical properties of peanut varieties

On the efforts for rationalizing the production of peanuts in Spain, one of the objectives was to obtain a well adapted variety, suitable for mechanization. We tried to get information on the characteristics that would condition the suitability of a variety to mechanized production, principally mechanical harvesting. All the characters studied would then be taken into account in a breeding program.

Industry-peppers harvest mechanization.

Production of peppers for deshidration (paprika) and for extraction of natural colorants is of great importance in some Mediterranean irrigation areas. In the area of Badajoz (Spain) traditional production, handling and postharvest systems are no longer feasible, although a very good quality and potential market exist for this product. All aspects of mechanized production and handling have been addressed: direct seeding and transplanting, cultivation systems and mechanical harvesting are searched to be adopted in a new production system. A study of size, shape and fruiting pattern of the new varieties was performed. A feasibility study of mechanized harvesting was also made. Results of field testing of different types of harvesters and performance of existing picking heads are presented, some of which yield a feasible solution for the growers of industry peppers in the area. The design, construction and field testing results of a new picking head based on the double-helix principle is presented.

Sensibilidad a las entallas del acero inoxidable dúplex fuertemente trefilado

En el presente trabajo se estudia la sensibilidad a las entallas suaves de alambres de acero inoxidable dúplex fuertemente trefilado. Las entallas consideradas son reducciones de la sección transversal del alambre no simétricas respecto al eje de revolución. Tras constatar experimentalmente que los alambres con este tipo de daño fallan por agotamiento plástico, se ha determinado numéricamente la carga de agotamiento plástico en función de la profundidad de entalla empleando un mode-lo computacional de elementos finitos. Los resultados numéricos indican que la mayor deformabilidad del alambre debida a la entalla actúa en favor de su tolerancia al daño y permite que ésta alcance el límite superior dado por la carga de agotamiento a tracción simple del ligamento resistente.This research deals with the sensitivity to blunt notches of highly cold-drawn wires made of dúplex stainless steel. The analyzed notches are actually reductions of the wire cross section, asymmetrically mechanized with respect to the longitudinal wire axis. Once experimentally verified that the notched wires fail by plástic collapse, the failure load was found as a function of notch depth by means of a finite element model. The numerical results show that the higher compliance of the wires provided by the notch increases their damage tolerance up to the upper bound given by the tensile plástic failure load of the notch ligament.