Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping

The surfactant effect of isoelectronic indium doping during metalorganic chemical vapor deposition growth of cubic GaN on GaAs (1 0 0) substrates was studied. Its influence on the optical properties and surface morphology was investigated by using room-temperature photoluminescence (PL) and atomic force microscopy. It is shown that the sample with small amount of In-doping has a narrower PL linewidth, and a smoother surface than undoped cubic GaN layers. A slight red shift of the near-band-edge emission peak was observed. These results revealed that, for small TMIn flow rates, indium played the role of the surfactant doping and effectively improved the cubic GaN film quality; for large TMIn flow rates, the alloying formation of Ga1-xInxN might have occurred. (C) 2002 Elsevier Science B.V. All rights reserved.

ECR plasma in growth of cubic GaN by low pressure MOCVD

To heteroepitaxally grow the crystalline cubic-GaN (c-GaN) film on the substrates with large lattice mismatch is basically important for fabricating the blue or ultraviolet laser diodes based on cubic group III nitride materials. We have obtained the crystalline c-GaN film and the heteroepitaxial interface between c-Gan and GaAs (001) substrate by the ECR Plasma-Assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) under low-pressure and low-temperature (similar to600degreesC) on a homemade ECR-plasma Semiconductor Processing Device (ESPD). In order to decrease the growth temperature, the ECR plasma source was adopted as the activated nitrogen source, therefore the working pressure of MOCVD was decreased down to the region less than 1 Pa. To eliminate the damages from energetic ions of current plasma source, a Multi-cusp cavity,coupling ECR Plasma source (MEP) was selected to use in our experiment. To decrease the strain and dislocations induced from the large lattice mismatch between c-GaN and GaAs substrate, the plasma pretreatment procedure i.e., the initial growth technique was investigated The experiment arrangements, the characteristics of plasma and the growth procedure, the characteristics on-GaN film and interface between c-GaN and GaAs(001), and the roles of ECR plasma are described in this contribution.

Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates

Cubic GaN/GaAs(0 0 1) epilayers and hexagonal inclusions are characterized by X-ray diffraction (XRD), Photoluminescence (PL), Raman spectroscopy, and transmission electron microscopy (TEM). The X-ray {0 0 0 2} and (1 0 (1) over bar 0) pole figures show that the orientation relationships between cubic GaN and hexagonal inclusions are (1 1 1)//(0 0 0 1), <1 1 2 >//<1 0 (1) over bar 0 >. The distribution of hexagonal inclusions mainly results from the interfacial bonding disorder in the grain boundaries parallel to hexagonal <0 0 0 1 > directions and the lattice mismatch in <0 0 0 1 > directions on {1 0 (1) over bar 0} planes. In order to reduce the energy increase in cubic epilayers, hexagonal lamellas with smaller sizes in <0 0 0 1 > directions often nucleate inside the buffer layer or near the interface between the buffer layer and the epitaxial layer, and penetrate through the whole epitaxial layer with this orientation relationship. (C) 2001 Elsevier Science B.V. All rights reserved.

Polarity dependence of hexagonal inclusions and cubic twins in GaN/GaAs(001) epilayers measured by conventional X-ray pole figure and grazing incident diffraction pole figure

The distribution of mixed phases and its dependence on the polarity of cubic GaN epilayers are investigated by conventional X-ray pole figure and grazing incident diffraction (GID) pole figure. The hexagonal inclusions and cubic twins can be classified into two portions: one is formed with strict crystalline orientations, the other with crystalline misorientations. The former can be measured by conventional pole figures which reveal that the density of lamellate hexagonal grains and cubic twins located on (1 1 1)(Ga) and ((1) over bar (1) over bar1)(Ga) along [1 (1) over bar 0] direction are higher than those on ((1) over bar 1 1), and (1 (1) over bar 1)(N) along [110] direction. However, the low signals from tiny mixed phases with crystalline misorientations, detected by GID pole figures, distribute in a larger phi region near the [1 1 0] and [(1) over bar (1) over bar 0] directions with much weaker intensity, and in a smaller phi region near the [1 (1) over bar 0] and [(1) over bar 1 0] directions with slightly stronger intensity. (C) 2001 Elsevier Science B.V. All rights reserved.

Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition

The epitaxial lateral overgrowth (ELO) of cubic GaN by metalorganic chemical vapor deposition has been performed on SiO2-patterned GaN laver. The mechanism of lateral overgrowth is studied It was found that the morphology of ELO GaN stripes strongly depended on the direction of stripe window openings, which was discussed based on the different growth rates of (1 1 1)A and (1 1 1)B. Under the optimized growth condition, single-phase cubic GaN was deposited successfully. The peak position of near-band emission in ELO GaN has a redshift of 13 meV compared with the conventionally grown sample, which may be due to the partial release of stress during the ELO process. (C) 2001 Published by Elsevier Science B.V.

Strain and photoluminescence characterization of cubic (In,Ga)N films grown on GaAs(001) substrates

Cubic InxGa1-xN films were successfully grown on GaAs(001) substrates by metalorganic chemical-vapor deposition. The values of x content ranging from 0.10 to 0.24 obtained at different growth conditions were measured by double-crystal x-ray diffraction (XRD). The perpendicular and parallel elastic strain of the In0.2Ga0.8N layer, epsilon(perpendicular to)=0.4% and epsilon(parallel to)=-0.4% for GaN and epsilon(perpendicular to)=0.37% and epsilon(parallel to)=-0.37% for InGaN, respectively, were derived using the XRD measurements. The inhomogeneous strain and the average grain size of the In0.2Ga0.8N/GaN films were also studied by XRD. Photoluminescence spectra were used to measure the optical characterization of the InxGa1-xN thin films with different In composition, and the near-band-edge emission dependence of cubic InxGa1-xN on the x value is nearly linear with In content x less than or equal to 0.24. (C) 2000 American Institute of Physics. [S0021-8979(00)03908-6].

Effect of Si doping on cubic GaN films grown on GaAs(100)

Epitaxial layers of cubic GaN have been grown by metalorganic vapor-phase epitaxy (MOVPE) with Si-doping carrier concentration ranging from 3 x 10(18) to 2.4 x 10(20)/cm(3). Si-doping decreased the yellow emission of GaN. However, the heavily doped n-type material has been found to induce phase transformation. As the Si-doping concentration increases, the hexagonal GaN nanoparticles increase. Judged from the linewidth of X-ray rocking curve, Si-doping increases the density of dislocations and stacking faults. Based on these observations, a model is proposed to interpret the phase transformation induced by the generated microdefects, such as dislocations and precipitates, and induced stacking faults under heavy Si-doping. (C) 1999 Elsevier Science B.V. All rights reserved.

Low-temperature growth of cubic GaN by metalorganic chemical-vapor deposition

Low-temperature growth of cubic GaN at 520 degrees C was achieved using CCl4 as an additive by metalorganic chemical-vapor deposition (MOCVD) on GaAs substrate. X-Ray measurement confirmed that the films are single-phase cubic GaN. Scanning electron microscopy (SEM) and reflection high-energy electron diffraction (RHEED) were also used to analyze the surface morphology and the quality of films. The evolution of surface morphology suggests that CCl4 can reduce the hopping barrier and thus Ga adatoms are able to diffuse easily on the GaN surface. (C) 1998 Elsevier Science S.A. All rights reserved.

Gallium diffusion through cubic GaN films grown on GaAs(100) at high-temperature using low-pressure MOVPE

Cubic GaN films were grown on GaAs(1 0 0) substrates by low-pressure metalorganic vapor-phase epitaxy at high temperature. We have found a nonlinear relation between GaN film thickness and growth timer and this nonlinearity becomes more obvious with increasing growth temperature. We assumed it was because of Ga diffusion through the GaN film, and developed a model which agrees well with the experimental results. These results raise questions concerning the role of Ga diffusion through the GaN film, which may affect the electrical and optical properties of the material. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

Growth of Cubic GaN by MOCVD at High Temperature

High quality cubic GaN (c-GaN) is grown by metalorganic vapor deposition (MOCVD) at an increased growth temperature of 900 ℃, with the growth rate of 1.6 μm/h. The full width at half maximum (FWHM) of room temperature photoluminescence (PL) for the high temperature grown GaN film is 48meV. It is smaller than that of the sample grown at 830 ℃. In X-ray diffraction (XRD) measurement, the high temperature grown GaN shows a (002) peak at 20° with a FWHM of 21'. It can be concluded that, although c-GaN is of metastable phase, high growth temperature is still beneficial to the improvement in its crystal quality. The relationship between the growth rate and growth temperature is also discussed.

Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates

Cubic GaN/GaAs(0 0 1) epilayers and hexagonal inclusions are characterized by X-ray diffraction (XRD), Photoluminescence (PL), Raman spectroscopy, and transmission electron microscopy (TEM). The X-ray {0 0 0 2} and (1 0 (1) over bar 0) pole figures show that the orientation relationships between cubic GaN and hexagonal inclusions are (1 1 1)//(0 0 0 1), <1 1 2 >//<1 0 (1) over bar 0 >. The distribution of hexagonal inclusions mainly results from the interfacial bonding disorder in the grain boundaries parallel to hexagonal <0 0 0 1 > directions and the lattice mismatch in <0 0 0 1 > directions on {1 0 (1) over bar 0} planes. In order to reduce the energy increase in cubic epilayers, hexagonal lamellas with smaller sizes in <0 0 0 1 > directions often nucleate inside the buffer layer or near the interface between the buffer layer and the epitaxial layer, and penetrate through the whole epitaxial layer with this orientation relationship. (C) 2001 Elsevier Science B.V. All rights reserved.

Approximate analytical optical transfer function for a wavefront-coded imaging system with two-dimensional rectangularly separable phase masks

Wavefront coding can be used to extend the depth of field of incoherent imaging systems and is a powerful system-level technique. In order to assess the performance of a wavefront-coded imaging system, defocused optical transfer function (OTF) is the metric frequently used. Unfortunately, to the best of our knowledge, among all types of phase masks, it is usually difficult to obtain the analytical OTF except the cubic one. Although numerical computation seems good enough for performance evaluation, the approximate analytical OTF is still indispensable because it can reflect the relationship between mask parameters and system frequency response in a clearer way. Thus, a method is proposed to derive the approximate analytical OTF for two-dimensional rectangularly separable phase masks. The analytical results are well consistent with the direct numerical computations, but the proposed method can be accepted only from engineering point of view and needs rigorous proof in future. (c) 2010 Society of Photo-Optical Instrumentation Engineers. [DOI: 10.1117/1.3485759]

Thermal properties and crystallization behavior of ultrafine fully-vulcanized powdered rubber particle toughened polypropylene

Thermal properties and crystallization-behavior of ultrafine fully-vulcanized powdered rubber (UFPR) toughened poly propylene (PP) were studied by Differential scanning calorimetry (DSC) and Wide angle X-ray diffraction (WAXD) measurements. It was found that the fraction of beta-form in the PP crystal increased at first, then sharply deceased up to zero with increasing UFPR content

Blends of Polypropylene and Syndiotactic 1,2-Polybutadiene: Morphology, Crystallization Behaviors and Mechanical Properties

Morphologies, crystallization behavior and mechanical properties of polypropylene(PP)/syndiotactic 1,2-polybutadiene(s-1,2 PB) blends were investigated. Morphology observation shows the well dispersed domains of s-1,2 PB in PP matrix with the rather small domain sizes from 0.1 to 0.5 mu m when the s-1,2 PB content increases from 5% to 20% (mass fraction) in the blends, and the phase structure tends to become co-continuous as s-1,2 PB content further increases.

Simulated morphological landscape of polymer single crystals by phase-field model

The novel phase field model with the "polymer characteristic" was established based on a nonconserved spatiotemporal Ginzburg-Landau equation (TDGL model A). Especially, we relate the diffusion equation with the crystal growth faces of polymer single crystals. Namely, the diffusion equations are discretized according to the diffusion coefficient of every lattice site in various crystal growth faces and the shape of lattice is selected based on the real proportion of the unit cell dimensions.