The status and causes of alien species invasion in China

Data of classification, origin, pathway and environmental impacts of invasive alien micro-organisms, invertebrates, amphibians and reptiles, fish, birds, mammals, weeds, trees, and marine organisms in terrestrial, aquatic and marine ecosystems of China, were analyzed, based on literature retrieval, field survey and consultation. Some 283 invasive alien species were recorded in China, including 19 invasive alien micro-organisms, 18 aquatic plants, 170 terrestrial plants, 25 aquatic invertebrates, 33 terrestrial invertebrates, 3 amphibians and reptiles, 10 fish, and 5 mammals. Of the invasive alien species, 55.1% originated from North and South America, 21.7% from Europe, 9.9% from Asia, 8.1% from Africa and 0.6% from Oceania. Many institutions and individuals in China lack adequate knowledge of ecological and environmental consequences caused by invasive alien species, with some ignorance of the dangerous invasion in the introduction of alien species. For instance, 50.0% of invasive alien plants were intentionally introduced as pasture, feedingstuff, ornamental plants, textile plants, medicinal plants, vegetables, or lawn plants, 25% of alien invasive animals were intentionally introduced for cultivation, ornament, or biological control, In addition, more efforts are being made in the introduction of alien species, and little attention is paid on the management of introduced alien species, which may cause their escape into natural environment and potential threats to the environment. There were also gaps in quarantine system in China. All microorganisms were unintentionally introduced, through timber, seedling, flowerpot, or soil; 76.3% of alien invasive animals invaded through commodity or transportation facility because of the failure of quarantine. Therefore, quarantine measures should be strictly implemented; and meanwhile the intentional introduction of alien species should be strictly managed and a system of risk assessment should be implemented.

Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films

A close relationship is found between the blue and yellow luminescence bands in n-type GaN films, which are grown without intentional acceptor doping. The intensity ratio of blue luminescence to yellow luminescence (I-BL/I-YL) decreases with the increase in edge dislocation densities as demonstrated by the (102) full width at half maximum of x-ray diffraction. In addition, the I-BL/I-YL ratio decreases with the increase in Si doping. It is suggested that the edge dislocation and Si impurity play important roles in linking the blue and yellow luminescence.

InN nanoflowers grown by metal organic chemical vapor deposition

Hexangular indium nitride nanoflower pattern is observed from scanning electron microscopy and atomic force microscopy. The sample is grown on c-plane (0001) sapphire by metal organic chemical vapor deposition with intentional introduction of hydrogen gas. With the aid of hydrogen, a stable existence of metallic indium is achieved. This will induce the growth of InN nanoflowers via self-catalysis vapor-liquid-solid (VLS) process. It is found that the VLS process is modulated by the interface kinetics and thermodynamics among the sapphire substrate, indium, and InN, which leads to the special morphology of the authors' InN nanoflower pattern. (c) 2006 American Institute of Physics.

Growth of GaSb and GaInAsSb layers for thermophotovolatic cells by liquid phase epitaxy - art. no. 68411E

GaSb based cells as receivers in thermophotovoltaic system have attracted great interest and been extensively studied in the recent 15 years. Although nowadays the manufacturing technologies have made a great progress, there are still some details need to make a further study. In this paper, undoped and doped GaSb layers were grown on n-GaSb (100) substrates from both Ga-rich and Sb-rich solutions using liquid phase epitaxy (LPE) technique. The nominal segregation coefficients k of intentional doped Zn were 1.4 and 8.8 determined from the two kinds of GaSb epitaxial layers. Additionally, compared with growing from Ga-rich solutions, the growing processes from Sb-rich solutions were much easier to control and the surface morphologies of epitaxial layers were smoother. Further-more, in order to broaden the absorbing edge, Ga1-xInxAsySb1-y quaternary alloys were grown on both GaSb and InAs substrates from In-rich solutions, under different temperature respectively.

Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition

Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get high quality 4H-SiC epilayers. Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates purchased from Cree is performed at a typical temperature of 1500 degrees C with a pressure of 40 Torr by using SiH4+C2H4+H-2 gas system. The surface morphologies and structural and optical properties of 4H-SiC epilayers are characterized with Nomarski optical microscope, atomic force microscopy (AFM), x-ray diffraction, Raman scattering, and low temperature photoluminescence (LTPL). The background doping of 32 pm-thick sample has been reduced to 2-5 x 10(15) cm(-3). The FWHM of the rocking curve is 9-16 arcsec. Intentional N-doped and B-doped 4H-SiC epilayers are obtained by in-situ doping of NH3 and B2H6, respectively. Schottky barrier diodes with reverse blocking voltage of over 1000 V are achieved preliminarily.

Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces

Homoepitaxial growth of 4H-SiC on off-oriented n-type Si-face (0001) substrates was performed in a home-made hot-wall low pressure chemical vapor deposition (LPCVD) reactor with SiH4 and C2H4 at temperature of 1500 C and pressure of 20 Torr. The surface morphology and intentional in-situ NH3 doping in 4H-SiC epilayers were investigated by using atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS). Thermal oxidization of 4H-SiC homoepitaxial layers was conducted in a dry O-2 and H-2 atmosphere at temperature of 1150 C. The oxide was investigated by employing x-ray photoelectron spectroscopy (XPS). 4H-SiC MOS structures were obtained and their C-V characteristics were presented.

Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN

The optical quenching of photoconductivity under dual illumination in GaN samples with different resistivity is investigated to reveal the variation of deep levels. The samples are grown by metal organic chemical vapour deposition without intentional doping. Quenching bands centered at 1.35 eV, 1.55 eV, 1.98 eV, and 2.60 eV are observed. It is found that the 1.98 eV quenching band is dominated in all the samples and the 2.60 eV band is observed only in the high-resistivity samples. The possible defect levels responsible for the quenching bands and the origin of different quenching behaviour at 2.60 eV are discussed. It is suggested that the defect level responsible for quenching at 2.60 eV plays an important role for the enhancement of resistivity.

Preparation of 50mm 3C-SiC/Si(111) as Substrates Suited for Ⅲ-Nitrides

50mm SiC films with high electrical uniformity are grown on Si(111) by a newly developed vertical low-pressure chemical vapor deposition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achieved by intentional introduction of ammonia and boron into the precursor gases.The dependence of growth rate and surface morphology on the C/Si ratio and optimized growth conditions is obtained.The best electrical uniformity of 50mm 3C-SiC films obtained by non-contact sheet resistance measurement is ±2.58%.GaN films are grown atop the as-grown 3C-SiC/Si(111) layers using molecular beam epitaxy (MBE).The data of both X-ray diffraction and low temperature photoluminescence of GaN/3C-SiC/Si(111) show that 3C-SiC is an appropriate substrate or buffer layer for the growth of Ⅲ-nitrides on Si substrates with no cracks.

半封闭溶样冷原子荧光法测定鱼体中的总汞

将半封闭混酸消化法与冷原子荧光法并用，对鱼体肌肉组织在95～140℃下进行消化并测定其总汞含量。实验结果检验表明．该方法精确度高。对于鱼汞国际标准样品（TORT-2，DORM-2）测定结果表明，实测结果与推荐值间的误差小于1．13％。是快速，准确地测定鱼体中总汞的理想方法。同时。此方法也适用于其它生物样品或沉积物和土壤中总汞的测定.

半封闭溶样冷原子荧光测定鱼体中总汞分析方法的建立

文章建立了一种新的测定鱼体中总汞的方法，将半封闭混酸消化法与冷原子荧光法并用，对鱼体肌肉组织在95-140℃下进行消化并测定其总汞含量。实验结果显示，该方法精确度高，便于操作；对鱼汞含量标准样品(TORT-2，DORM-2)的实测结果与推荐值间误差小于1．13％，是快速、准确地测定鱼体中总汞的理想方法。

GC-CVAFS法测定鱼体内甲基汞的分析方法研究

采用200g/L的KOH溶液消解鱼样、GC-CVAFS方法检测鱼体内的甲基汞.对鱼汞国际标准样品（TORT-2,DORM-2）实测结果与推荐值间误差小于2.3%,测定值的相对标准偏差为4.77%,方法检出限为0.002 ng/g,本方法灵敏、可靠,适合鱼体中甲基汞的准确测定.[采用200g/L的KOH溶液消解鱼样、GC-CVAFS方法检测鱼体内的甲基汞.对鱼汞国际标准样品（TORT-2,DORM-2）实测结果与推荐值间误差小于2.3%,测定值的相对标准偏差为4.77%,方法检出限为0.002 ng/g,本方法灵敏、可靠,适合鱼体中甲基汞的准确测定.

学前儿童朴素生物学“理论”的发展——对“生长”认知的实验研究

There is a debate in cognitive development theory on whether cognitive development is general or specific. More and more researchers think that cognitive development is domain specific. People start to investigate preschoolers' native theory of human being's basic knowledge systems. Naive biology is one of the core domains. But there is argument whether there is separate native biological concepts among preschoolers. The research examined preschoolers' cognitive development of naive biological theory on two levels which is "growth" and "aliveness", and it also examined individual difference and factors that lead to the difference. Three studies were designed. Study 1 was to study preschoolers' cognition on growth, which is a basic trait of living things, and whether children can distinguish living and non-living things with the trait and understanding the causality. Study 2 was to investigate preschoolers' distinction between living things and non-living things from an integrated level. Study 3 was to investigate how children make inferences to unfamiliar things with their domain specific knowledge. The results showed the following: 1. Preschoolers gradually developed naive theory of biology on growth level, but their naive theory on integrated level has not developed. 2 Preschoolers' naive theory of biology is not "all or none", 4- and 5-year-old children showed some distinction between living and non-living things to some extent, they use non-intentional reason to explain the cause of growth and their explanation showed coherence. But growth has not been a criteria of ontological distinction of living and non-living things for 4- and 5-year-old children, most 6-year-old children can distinguish between living and non-living things, and these show the developing process of biological cognition. 3. Preschoolers' biological inference is influenced by their domain-specific knowledge, whether they can make inference to new trait of living things depends on whether they have specific knowledge. In the deductive task, children use their knowledge to make inference to unfamiliar things. 4-year-olds use concrete knowledge more often while the 6-year-old use generalized knowledge more frequency. 4. Preschoolers' knowledge grow with age, but individuals' cognitive development speed at different period. Urban and rural educational background affect cognitive performance. As time goes by, the urban-rural knowledge difference to distinguish living and nonliving things reduces. And preschoolers' are at the same developmental stage because the three age groups have similar causal explanation both in quantity and quality. 5. There is intra-individual difference on preschoolers' naive biological cognition. They show different performance on different tasks and domains, and their cognitive development is sequential, they understand growth earlier than they understand "alive", which is an integrated concept. The intra-individual differences decrease with age.

A Model for Deliberation, Action, and Introspection

This thesis investigates the problem of controlling or directing the reasoning and actions of a computer program. The basic approach explored is to view reasoning as a species of action, so that a program might apply its reasoning powers to the task of deciding what inferences to make as well as deciding what other actions to take. A design for the architecture of reasoning programs is proposed. This architecture involves self-consciousness, intentional actions, deliberate adaptations, and a form of decision-making based on dialectical argumentation. A program based on this architecture inspects itself, describes aspects of itself, and uses this self-reference and these self-descriptions in making decisions and taking actions. The program's mental life includes awareness of its own concepts, beliefs, desires, intentions, inferences, actions, and skills. All of these are represented by self-descriptions in a single sort of language, so that the program has access to all of these aspects of itself, and can reason about them in the same terms.

Autsajder literacki w niemieckiej i rosyjskiej prozie XIX-XI wieku. Badania narratologiczne

Wydział Neofilologii: Instytut Filologii Germańskiej

Estádios de motivação para o tratamento na dependência alcoólica – percursos individuais e género

Dissertação de Mestrado apresentada à Universidade Fernando Pessoa como parte dos requisitos para obtenção do grau de Mestre em Psicologia Clínica e da Saúde.