Direct male-male competition can facilitate invasion of new colour types in Lake Victoria cichlids

The possibility that disruptive sexual selection alone can cause sympatric speciation is currently a subject of much debate. The initial difficulty for new and rare ornament phenotypes to invade a population, and the stabilisation of the resulting polymorphism in trait and preference make this hypothesis problematic. Recent theoretical work indicates that the invasion is facilitated if males with the new phenotype have an initial advantage in male-male competition. We studied a pair of sympatric incipient species of cichlids from Lake Victoria, in which the red (Pundamilia nyererei) and blue males (P. pundamilia) vigorously defend territories. Other studies suggested that red phenotypes may have repeatedly invaded blue populations in independent episodes of speciation. We hypothesised that red coloration confers an advantage in male-male competition, assisting red phenotypes to invade. To test this hypothesis, we staged contests between red and blue males from a population where the phenotypes are interbreeding morphs or incipient species. We staged contests under both white and green light condition. Green light effectively masks the difference between red and blue coloration. Red males dominated blue males under white light, but their competitive advantage was significantly diminished under green light. Contests were shorter when colour differences were visible. Experience of blue males with red males did not affect the outcome of a contest. The advantage of red over blue in combats may assist the red phenotype to invade blue populations. The apparently stable co-existence of red and blue incipient species in many populations of Lake Victoria cichlids is discussed.

What Sensory Signals are About

Kathleen Akins argues that "the traditional view" of sensory systems assumes too quickly that their function is detecting features of the outside environment. Instead, some systems are "narcissistic"--their signals tell their own states--and others may send signals that are not about anything at all. But Akins overlooks that "traditionalists" may argue, with Millikan, that the function of sensory systems may be steering motor routines. Aboutness comes in as how the systems have steered in ways evolution liked--by gearing steering to external features. Color vision and olfaction, for example, are thus, about external features.

A quantitative analysis of microcirculation in sore-prone pressure areas on conventional and pressure relief hospital mattresses using laser Doppler flowmetry and tissue spectrophotometry

BACKGROUND Pressure ulcers are associated with severe impairment for the patients and high economic load. With this study we wanted to gain more insight to the skin perfusion dynamics due to external loading. Furthermore, we evaluated the effect of different types of pressure relief mattresses. METHODS A total of 25 healthy volunteers were enrolled in the study. Perfusion dynamics of the sacral and the heel area were assessed using the O2C-device, which combines a laser light, to determine blood flow, and white light to determine the relative amount of hemoglobin. Three mattresses were evaluated compared to a hard surface: a standard hospital foam mattress bed, a visco-elastic foam mattress, and an air-fluidized bed. RESULTS In the heel area, only the air-fluidized bed was able to maintain the blood circulation (mean blood flow of 13.6 ± 6 versus 3.9 ± 3 AU and mean relative amount of hemoglobin of 44.0 ± 14 versus 32.7 ± 12 AU.) In the sacral area, all used mattresses revealed an improvement of blood circulation compared to the hard surface. CONCLUSION The results of this study form a more precise pattern of perfusion changes due to external loading on various pressure relief mattresses. This knowledge may reduce the incidence of pressure ulcers and may be an influencing factor in pressure relief mattress selection.

The effect of male coloration on female mate choice in closely related Lake Victoria cichlids (Haplochromis nyererei complex)

We studied the effect of male coloration on interspeciÆc female mate choice in two closely related species of haplochromine cichlids from Lake Victoria. The species differ primarily in male coloration. Males of one species are red, those of the other are blue. We re- corded the behavioral responses of females to males of both species in paired male trials under white light and under monochromatic light, under which the interspecific differences in coloration were masked. Females of both species exhibited species-assortative mate choice when colour differences were visible, but chose non-assortatively when colour differences were masked by light conditions. Neither male behaviour nor overall female response frequencies differed between light treatments. That female preferences could be altered by manipulating the perceived colour pattern implies that the colour itself is used in interspecific mate choice, rather than other characters. Hence, male coloration in haplochromine cichlids does underlie sexual selection by direct mate choice, involving the capacity for individual assessment of potential mates by the female. Females of both species responded more frequently to blue males under monochromatic light. Blue males were larger and displayed more than red males. This implies a hierarchy of choice criteria. Females may use male display rates, size, or both when colour is unavailable. Where available, colour has gained dominance over other criteria. This may explain rapid speciation by sexual selection on male coloration, as proposed in a recent mathematical model.

Cichlid Fish Diversity Threatened by Eutrophication That Curbs Sexual Selection

Cichlid fish species of Lake Victoria can interbreed without loss of fertility but are sexually isolated by mate choice. Mate choice is determined on the basis of coloration, and strong assortative mating can quickly lead to sexual isolation of color morphs. Dull fish col- oration, few color morphs, and low species diversity are found in areas that have become turbid as a result of recent eutrophication. By constraining color vision, turbidity interferes with mate choice, relaxes sexual selection, and blocks the mechanism of reproductive isolation. In this way, human activities that increase turbidity destroy both the mechanism of diversification and that which maintains diversity.

Impact of Different Illumination Conditions on Visual Caries Detection with ICDAS

The aim of this study was to test the influence of different degrees of additional illumination on visual caries detection using the International Caries Detection and Assessment System (ICDAS). Two calibrated examiners assessed 139 occlusal surfaces of extracted permanent molars using a standard operation lamp with or without an additional headlamp providing three default brightness intensities. Histology served as the gold standard. Pooled data showed no differences in sensitivities. Specificities were not influenced by additional light. The area under the curve for the Marthaler classification D3 threshold was significantly lower when an additional strong headlamp was used (0.59 compared to 0.69-0.72 when reduced illumination intensities were used). One of the two examiners also had a significantly lower sensitivity for the D1 threshold when an additional headlamp was used. The use of additional white light led to a reduced detection of dentine lesions.

Confocal analysis of synaptic connectivity of the rod pathway in the rabbit retina

The retina is a specialized neuronal structure that transforms the optical image into electrical signals which are transmitted to the brain via the optic nerve. As part of the strategy to cover a stimulus range as broad as 10 log units, from dim starlight to bright sunlight, retinal circuits are broadly divided into rod and cone pathways, responsible for dark and light-adapted vision, respectively. ^ In this dissertation, confocal microscopy and immunocytochemical methods were combined to study the synaptic connectivity of the rod pathway from the level of individual synapses to whole populations of neurons. The study was focused on synaptic interactions at the rod bipolar terminal. The purpose is to understand the synaptic structure of the dyad synapse made by rod bipolar terminals, including the synaptic components and connections, and their physiological functions in the rod pathway. In addition, some additional components and connections of the rod pathway were also studied in these experiments. The major results can be summarized as following: At the dyad synapse of rod bipolar terminals, three postsynaptic components—processes of All amacrine cells and the varicosities of S1 or S2 amacrine cells express different glutamate receptor subunits, which may underlie the functional diversity of these postsynaptic neurons. A reciprocal feedback system is formed by rod bipolar terminals and S1/S2 amacrine cells. Analysis showed these two wide-field GABA amacrine cells have stereotyped synaptic connections with the appropriate morphology and distribution to perform specific functions. In addition, S1 and S2 cells have different coupling patterns and, in general, there is no coupling between the two types. Besides the classic rod pathway though rod bipolar cells and All amacrine cells, the finding of direct connections between certain types of OFF cone bipolar cells and rods indicates the presence of an alternative rod pathway in the rabbit retina. ^ In summary, this dissertation presents a detailed view of the connection and receptors at rod bipolar terminals. Based on the morphology, distribution and coupling, different functional roles were identified for S1 and S2 amacrine cells. Finally, an alternative to the classic rod pathway was found in the rabbit retina. ^

Efecto de la temperatura, escarificación y concentraciones de calcio en la germinación de Gymnocalycium schickendantzii (F.A.C. Weber) Britton & Rose (Cactaceae)

Gymnocalycium schickendantzii (F.A.C. Weber) Britton & Rose (Cactaceae) es una especie endémica de Argentina. En la provincia de Mendoza las poblaciones de este cactus todavía no están siendo afectadas por las urbanizaciones y cultivos que ponen en peligro su supervivencia. Conocer aspectos sobre su germinación podría ayudar a explicar el porqué de la presencia de esta especie en su hábitat natural. El objetivo del presente trabajo fue determinar en un ensayo de germinación de G. schickendantzii el efecto de tratamientos de temperaturas de 20 y 30°C durante 25 días en laboratorio usando 3 concentraciones de calcio (1, 10 y 20 meq/l Ca), y agua como testigo con y sin escarificación, y bajo condiciones de luz blanca. Se observó que a 30°C los porcentajes de germinación, con o sin escarificación, fueron significativamente mayores que a 20°C. El efecto de la escarificación sólo ayudó a incrementar los valores de germinación cuando fueron tratadas a 20°C. Las concentraciones de calcio tienen un débil efecto en la germinación de las semillas en las mismas condiciones. El tiempo de inicio de germinación (IG) y para obtener el 50% de ella (T50) fueron mayores a 30°C tanto en las semillas escarificadas como sin escarificar.

Extracción y análisis de pectinas a partir de arándano (Vaccinium corymbosum L.) cv. O'Neall

El arándano (Vacinium corymbosum) es un fruto muy apreciado debido a sus propiedades nutricionales, bajo valor energético y alto contenido de antioxidantes. Su remanente no exportable es destinado a la industria local para la elaboración de zumos, siendo una fuente potencial de pectinas. El presente estudio tuvo como objetivos: medir la influencia del pH 2,0; 2,75 y 3,36 natural y el tiempo de calentamiento entre 60 y 90 minutos a 90°C, sobre la extracción de pectina de arándano por medio de una hidrólisis ácida; evaluar la calidad de la pectina mediante el grado de esterificación; elaborar y evaluar desde el aspecto sensorial las gelatinas provenientes de pectinas extraídas a 35°, 50° y 65°Brix. El mayor rendimiento de pectina, 0,93% (p/p), se obtuvo a pH 2,0 y en 90 minutos. El grado de esterificación no superó el 50% en la mayoría de los tratamientos, clasificando las pectinas como de "bajo metoxilo". Los geles elaborados a 50°Brix tuvieron un mayor nivel de aceptabilidad por los panelistas, clasificándolos como "me gusta levemente". En relación con el atributo sensorial color de los geles elaborados, fue evaluado por los panelistas como "pálido", dado el leve color de las pectinas utilizadas.

The formation of a subsurface anticyclonic eddy in the Peru-Chile Undercurrent and its impact on the near-coastal salinity, oxygen and nutrient distributions

The formation of a subsurface anticyclonic eddy in the Peru-Chile Undercurrent (PCUC) in January and February 2013 is investigated using a multi-platform four-dimensional observational approach. Research vessel, multiple glider and mooring-based measurements were conducted in the Peruvian upwelling regime near 12°30'S. The dataset consists of more than 10000 glider profiles and repeated vessel-based hydrography and velocity transects. It allows a detailed description of the eddy formation and its impact on the near-coastal salinity, oxygen and nutrient distributions. In early January, a strong PCUC with maximum poleward velocities of ca. 0.25 m/s at 100 to 200 m depth was observed. Starting on January 20 a subsurface anticyclonic eddy developed in the PCUC downstream of a topographic bend, suggesting flow separation as the eddy formation mechanism. The eddy core waters exhibited oxygen concentrations less than 1mol/kg, an elevated nitrogen-deficit of ca. 17µmol/l and potential vorticity close to zero, which seemed to originate from the bottom boundary layer of the continental slope. The eddy-induced across-shelf velocities resulted in an elevated exchange of water masses between the upper continental slope and the open ocean. Small scale salinity and oxygen structures were formed by along-isopycnal stirring and indications of eddy-driven oxygen ventilation of the upper oxygen minimum zone were observed. It is concluded that mesoscale stirring of solutes and the offshore transport of eddy core properties could provide an important coastal open-ocean exchange mechanism with potentially large implications for nutrient budgets and biogeochemical cycling in the oxygen minimum zone off Peru.

A role of Toc33 in the protochlorophyllide-dependent plastid import pathway of NADPH:proto¬chlorophyllide oxidoreductase (POR) A

NADPH: protochlorophyllide oxido reductase (POR) A is a key enzyme of chlorophyll biosynthesis in angiosperms. It is nucleus-encoded, synthesized as a larger precursor in the cytosol and imported into the plastids in a substrate-dependent manner. Plastid envelope membrane proteins, called protochlorophyllide dependent translocon proteins, Ptcs, have been identified that interact with pPORA during import. Amongthem are a 16-kDa ortholog of the previously characterized outer envelope protein Oep16 (named Ptc16) and a33-kDa protein (Ptc33) related to the GTP-binding proteins Toc33 and Toc34 of Arabidopsis. In the present work, we studied the interactions and roles of Ptc16 and Ptc33 during pPORA import. Radio labeled Ptc16/Oep16 was synthesized from a corresponding cDNA and imported into isolated Arabidopsis plastids. Crosslinking experiments revealed that import of35S-Oep16/Ptc16 is stimulated by GTP.35S-Oep16/Ptc16forms larger complexes with Toc33 but not Toc34. Plastids of the ppi1 mutant of Arabidopsis lacking Toc33, were unable to import pPORA in darkness but imported the small subunit precursor of ribulose-1,5-bisphosphate carboxylase/oxygenase (pSSU), precursor ferredoxin (pFd) as well as pPORB which is a close relative of pPORA. In white light, partial suppressions of pSSU, pFd and pPORB import were observed. Our results unveil a hitherto unrecognized role of Toc33 in pPORA import and suggest photo oxidative membrane damage, induced by excess Pchlide accumulating in ppi1 chloroplasts because of the lack of pPORA import, to be the cause of the general drop of protein import.

Crecimiento, fabricación y caracterización de heteroestructuras y nanocolumnas ordenadas basadas en nitruros del grupo III para aplicaciones sensoras

Esta memoria está basada en el crecimiento y caracterización de heteroestructuras Al(Ga)N/GaN y nanocolumnas ordenadas de GaN, y su aplicación en sensores químicos. El método de crecimiento ha sido la epitaxia de haces moleculares asistida por plasma (PAMBE). En el caso de las heteroestructuras Al(Ga)N/GaN, se han crecido barreras de distinto espesor y composición, desde AlN de 5 nm, hasta AlGaN de 35 nm. Además de una caracterización morfológica, estructural y eléctrica básica de las capas, también se han fabricado a partir de ellas dispositivos tipo HEMTs. La caracterización eléctrica de dichos dispositivos (carga y movilidad de en el canal bidimensional) indica que las mejores heteroestructuras son aquellas con un espesor de barrera intermedio (alrededor de 20 nm). Sin embargo, un objetivo importante de esta Tesis ha sido verificar las ventajas que podían tener los sensores basados en heteroestructuras AlN/GaN (frente a los típicos basados en AlGaN/GaN), con espesores de barrera muy finos (alrededor de 5 nm), ya que el canal de conducción que se modula por efecto de cambios químicos está más cerca de la superficie en donde ocurren dichos cambios químicos. De esta manera, se han utilizado los dispositivos tipo HEMTs como sensores químicos de pH (ISFETs), y se ha comprobado la mayor sensibilidad (variación de corriente frente a cambios de pH, Ids/pH) en los sensores basados en AlN/GaN frente a los basados en AlGaN/GaN. La mayor sensibilidad es incluso más patente en aplicaciones en las que no se utiliza un electrodo de referencia. Se han fabricado y caracterizado dispositivos ISFET similares utilizando capas compactas de InN. Estos sensores presentan peor estabilidad que los basados en Al(Ga)N/GaN, aunque la sensibilidad superficial al pH era la misma (Vgs/pH), y su sensibilidad en terminos de corriente de canal (Ids/pH) arroja valores intermedios entre los ISFET basados en AlN/GaN y los valores de los basados en AlGaN/GaN. Para continuar con la comparación entre dispositivos basados en Al(Ga)N/GaN, se fabricaron ISFETs con el área sensible más pequeña (35 x 35 m2), de tamaño similar a los dispositivos destinados a las medidas de actividad celular. Sometiendo los dispositivos a pulsos de voltaje en su área sensible, la respuesta de los dispositivos de AlN presentaron menor ruido que los basados en AlGaN. El ruido en la corriente para dispositivos de AlN, donde el encapsulado no ha sido optimizado, fue tan bajo como 8.9 nA (valor rms), y el ruido equivalente en el potencial superficial 38.7 V. Estos valores son más bajos que los encontrados en los dispositivos típicos para la detección de actividad celular (basados en Si), y del orden de los mejores resultados encontrados en la literatura sobre AlGaN/GaN. Desde el punto de vista de la caracterización electro-química de las superficies de GaN e InN, se ha determinado su punto isoeléctrico. Dicho valor no había sido reportado en la literatura hasta el momento. El valor, determinado por medidas de “streaming potential”, es de 4.4 y 4 respectivamente. Este valor es una importante característica a tener en cuenta en sensores, en inmovilización electrostática o en la litografía coloidal. Esta última técnica se discute en esta memoria, y se aplica en el último bloque de investigación de esta Tesis (i.e. crecimiento ordenado). El último apartado de resultados experimentales de esta Tesis analiza el crecimiento selectivo de nanocolumnas ordenadas de GaN por MBE, utilizando mascaras de Ti con nanoagujeros. Se ha estudiado como los distintos parámetros de crecimiento (i.e. flujos de los elementos Ga y N, temperatura de crecimiento y diseño de la máscara) afectan a la selectividad y a la morfología de las nanocolumnas. Se ha conseguido con éxito el crecimiento selectivo sobre pseudosustratos de GaN con distinta orientación cristalina o polaridad; templates de GaN(0001)/zafiro, GaN(0001)/AlN/Si, GaN(000-1)/Si y GaN(11-20)/zafiro. Se ha verificado experimentalmente la alta calidad cristalina de las nanocolumnas ordenadas, y su mayor estabilidad térmica comparada con las capas compactas del mismo material. Las nanocolumnas ordenadas de nitruros del grupo III tienen una clara aplicación en el campo de la optoelectrónica, principalmente para nanoemisores de luz blanca. Sin embargo, en esta Tesis se proponen como alternativa a la utilización de capas compactas o nanocolumnas auto-ensambladas en sensores. Las nanocolumnas auto-ensambladas de GaN, debido a su alta razón superficie/volumen, son muy prometedoras en el campo de los sensores, pero su amplia dispersión en dimensiones (altura y diámetro) supone un problema para el procesado y funcionamiento de dispositivos reales. En ese aspecto, las nanocolumnas ordenadas son más robustas y homogéneas, manteniendo una alta relación superficie/volumen. Como primer experimento en el ámbito de los sensores, se ha estudiado como se ve afectada la emisión de fotoluminiscencia de las NCs ordenadas al estar expuestas al aire o al vacio. Se observa una fuerte caída en la intensidad de la fotoluminiscencia cuando las nanocolumnas están expuestas al aire (probablemente por la foto-adsorción de oxigeno en la superficie), como ya había sido documentado anteriormente en nanocolumnas auto-ensambladas. Este experimento abre el camino para futuros sensores basados en nanocolumnas ordenadas. Abstract This manuscript deals with the growth and characterization of Al(Ga)N/GaN heterostructures and GaN ordered nanocolumns, and their application in chemical sensors. The growth technique has been the plasma-assisted molecular beam epitaxy (PAMBE). In the case of Al(Ga)N/GaN heterostructures, barriers of different thickness and composition, from AlN (5 nm) to AlGaN (35 nm) have been grown. Besides the basic morphological, structural and electrical characterization of the layers, HEMT devices have been fabricated based on these layers. The best electrical characteristics (larger carriers concentration and mobility in the two dimensional electron gas) are those in AlGaN/GaN heterostructures with a medium thickness (around 20 nm). However, one of the goals of this Thesis has been to verify the advantages that sensors based on AlN/GaN (thickness around 7 nm) have compared to standard AlGaN/GaN, because the conduction channel to be modulated by chemical changes is closer to the sensitive area. In this way, HEMT devices have been used as chemical pH sensors (ISFETs), and the higher sensitivity (conductance change related to pH changes, Ids/pH) of AlN/GaN based sensors has been proved. The higher sensibility is even more obvious in application without reference electrode. Similar ISFETs devices have been fabricated based on InN compact layers. These devices show a poor stability, but its surface sensitivity to pH (Vgs/pH) and its sensibility (Ids/pH) yield values between the corresponding ones of AlN/GaN and AlGaN/GaN heterostructures. In order to a further comparison between Al(Ga)N/GaN based devices, ISFETs with smaller sensitive area (35 x 35 m2), similar to the ones used in cellular activity record, were fabricated and characterized. When the devices are subjected to a voltage pulse through the sensitive area, the response of AlN based devices shows lower noise than the ones based on AlGaN. The noise in the current of such a AlN based device, where the encapsulation has not been optimized, is as low as 8.9 nA (rms value), and the equivalent noise to the surface potential is 38.7 V. These values are lower than the found in typical devices used for cellular activity recording (based on Si), and in the range of the best published results on AlGaN/GaN. From the point of view of the electrochemical characterization of GaN and InN surfaces, their isoelectric point has been experimentally determined. Such a value is the first time reported for GaN and InN surfaces. These values are determined by “streaming potential”, being pH 4.4 and 4, respectively. Isoelectric point value is an important characteristic in sensors, electrostatic immobilization or in colloidal lithography. In particular, colloidal lithography has been optimized in this Thesis for GaN surfaces, and applied in the last part of experimental results (i.e. ordered growth). The last block of this Thesis is focused on the selective area growth of GaN nanocolumns by MBE, using Ti masks decorated with nanoholes. The effect of the different growth parameters (Ga and N fluxes, growth temperature and mask design) is studied, in particular their impact in the selectivity and in the morphology of the nanocolumns. Selective area growth has been successful performed on GaN templates with different orientation or polarity; GaN(0001)/sapphire, GaN(0001)/AlN/Si, GaN(000- 1)/Si and GaN(11-20)/sapphire. Ordered nanocolumns exhibit a high crystal quality, and a higher thermal stability (lower thermal decomposition) than the compact layers of the same material. Ordered nanocolumns based on III nitrides have a clear application in optoelectronics, mainly for white light nanoemitters. However, this Thesis proposes them as an alternative to compact layers and self-assembled nanocolumns in sensor applications. Self-assembled GaN nanocolumns are very appealing for sensor applications, due to their large surface/volume ratio. However, their large dispersion in heights and diameters are a problem in terms of processing and operation of real devices. In this aspect, ordered nanocolumns are more robust and homogeneous, keeping the large surface/volume ratio. As first experimental evidence of their sensor capabilities, ordered nanocolumns have been studied regarding their photoluminiscence on air and vacuum ambient. A big drop in the intensity is observed when the nanocolumns are exposed to air (probably because of the oxygen photo-adsortion), as was already reported in the case of self-assembled nanocolumns. This opens the way to future sensors based on ordered III nitrides nanocolumns.

In-situ optical reflectance characterization of ion beam irradiation damage on crystalline (quartz) and amorphous (silica) SiO2

Outline: • Motivation, aim • Complement waveguide data on silica • Optical data in quartz • Detailed analysis, i.e. both fluence kinetics and resolution • Efficiency of irradiation and analysis, samples, time... • Experimental set-up description • Reflectance procedure • Options: light source (lasers, white light..), detectors, configurations • Results and discussion • Comparative of amorphous and crystalline phases

Research on wide-bandgap intermediate band solar cells and development of experimental techniques for their characterization

El trabajo que ha dado lugar a esta Tesis Doctoral se enmarca en la invesitagación en células solares de banda intermedia (IBSCs, por sus siglas en inglés). Se trata de un nuevo concepto de célula solar que ofrece la posibilidad de alcanzar altas eficiencias de conversión fotovoltaica. Hasta ahora, se han demostrado de manera experimental los fundamentos de operación de las IBSCs; sin embargo, esto tan sólo has sido posible en condicines de baja temperatura. El concepto de banda intermedia (IB, por sus siglas en inglés) exige que haya desacoplamiento térmico entre la IB y las bandas de valencia y conducción (VB and CB, respectivamente, por sus siglas en inglés). Los materiales de IB actuales presentan un acoplamiento térmico demasiado fuerte entre la IB y una de las otras dos bandas, lo cual impide el correcto funcionamiento de las IBSCs a temperatura ambiente. En el caso particular de las IBSCs fabricadas con puntos cuánticos (QDs, por sus siglas en inglés) de InAs/GaAs - a día de hoy, la tecnología de IBSC más estudiada - , se produce un rápido intercambio de portadores entre la IB y la CB, por dos motivos: (1) una banda prohibida estrecha (< 0.2 eV) entre la IB y la CB, E^, y (2) la existencia de niveles electrónicos entre ellas. El motivo (1) implica, a su vez, que la máxima eficiencia alcanzable en estos dispositivos es inferior al límite teórico de la IBSC ideal, en la cual E^ = 0.71 eV. En este contexto, nuestro trabajo se centra en el estudio de IBSCs de alto gap (o banda prohibida) fabricadsas con QDs, o lo que es lo mismo, QD-IBSCs de alto gap. Hemos fabricado e investigado experimentalmente los primeros prototipos de QD-IBSC en los que se utiliza AlGaAs o InGaP para albergar QDs de InAs. En ellos demostramos une distribución de gaps mejorada con respecto al caso de InAs/GaAs. En concreto, hemos medido valores de E^ mayores que 0.4 eV. En los prototipos de InAs/AlGaAs, este incremento de E^ viene acompaado de un incremento, en más de 100 meV, de la energía de activación del escape térmico. Además, nuestros dispositivos de InAs/AlGaAs demuestran conversión a la alza de tensión; es decir, la producción de una tensión de circuito abierto mayor que la energía de los fotones (dividida por la carga del electrón) de un haz monocromático incidente, así como la preservación del voltaje a temperaura ambiente bajo iluminación de luz blanca concentrada. Asimismo, analizamos el potencial para detección infrarroja de los materiales de IB. Presentamos un nuevo concepto de fotodetector de infrarrojos, basado en la IB, que hemos llamado: fotodetector de infrarrojos activado ópticamente (OTIP, por sus siglas en inglés). Nuestro novedoso dispositivo se basa en un nuevo pricipio físico que permite que la detección de luz infrarroja sea conmutable (ON y OFF) mediante iluminación externa. Hemos fabricado un OTIP basado en QDs de InAs/AlGaAs con el que demostramos fotodetección, bajo incidencia normal, en el rango 2-6/xm, activada ópticamente por un diodoe emisor de luz de 590 nm. El estudio teórico del mecanismo de detección asistido por la IB en el OTIP nos lleva a poner en cuestión la asunción de quasi-niveles de Fermi planos en la zona de carga del espacio de una célula solar. Apoyados por simuaciones a nivel de dispositivo, demostramos y explicamos por qué esta asunción no es válida en condiciones de corto-circuito e iluminación. También llevamos a cabo estudios experimentales en QD-IBSCs de InAs/AlGaAs con la finalidad de ampliar el conocimiento sobre algunos aspectos de estos dispositivos que no han sido tratados aun. En particular, analizamos el impacto que tiene el uso de capas de disminución de campo (FDLs, por sus siglas en inglés), demostrando su eficiencia para evitar el escape por túnel de portadores desde el QD al material anfitrión. Analizamos la relación existente entre el escape por túnel y la preservación del voltaje, y proponemos las medidas de eficiencia cuántica en función de la tensión como una herramienta útil para evaluar la limitación del voltaje relacionada con el túnel en QD-IBSCs. Además, realizamos medidas de luminiscencia en función de la temperatura en muestras de InAs/GaAs y verificamos que los resltados obtenidos están en coherencia con la separación de los quasi-niveles de Fermi de la IB y la CB a baja temperatura. Con objeto de contribuir a la capacidad de fabricación y caracterización del Instituto de Energía Solar de la Universidad Politécnica de Madrid (IES-UPM), hemos participado en la instalación y puesta en marcha de un reactor de epitaxia de haz molecular (MBE, por sus siglas en inglés) y el desarrollo de un equipo de caracterización de foto y electroluminiscencia. Utilizando dicho reactor MBE, hemos crecido, y posteriormente caracterizado, la primera QD-IBSC enteramente fabricada en el IES-UPM. ABSTRACT The constituent work of this Thesis is framed in the research on intermediate band solar cells (IBSCs). This concept offers the possibility of achieving devices with high photovoltaic-conversion efficiency. Up to now, the fundamentals of operation of IBSCs have been demonstrated experimentally; however, this has only been possible at low temperatures. The intermediate band (IB) concept demands thermal decoupling between the IB and the valence and conduction bands. Stateof- the-art IB materials exhibit a too strong thermal coupling between the IB and one of the other two bands, which prevents the proper operation of IBSCs at room temperature. In the particular case of InAs/GaAs quantum-dot (QD) IBSCs - as of today, the most widely studied IBSC technology - , there exist fast thermal carrier exchange between the IB and the conduction band (CB), for two reasons: (1) a narrow (< 0.2 eV) energy gap between the IB and the CB, EL, and (2) the existence of multiple electronic levels between them. Reason (1) also implies that maximum achievable efficiency is below the theoretical limit for the ideal IBSC, in which EL = 0.71 eV. In this context, our work focuses on the study of wide-bandgap QD-IBSCs. We have fabricated and experimentally investigated the first QD-IBSC prototypes in which AlGaAs or InGaP is the host material for the InAs QDs. We demonstrate an improved bandgap distribution, compared to the InAs/GaAs case, in our wide-bandgap devices. In particular, we have measured values of EL higher than 0.4 eV. In the case of the AlGaAs prototypes, the increase in EL comes with an increase of more than 100 meV of the activation energy of the thermal carrier escape. In addition, in our InAs/AlGaAs devices, we demonstrate voltage up-conversion; i. e., the production of an open-circuit voltage larger than the photon energy (divided by the electron charge) of the incident monochromatic beam, and the achievement of voltage preservation at room temperature under concentrated white-light illumination. We also analyze the potential of an IB material for infrared detection. We present a IB-based new concept of infrared photodetector that we have called the optically triggered infrared photodetector (OTIP). Our novel device is based on a new physical principle that allows the detection of infrared light to be switched ON and OFF by means of an external light. We have fabricated an OTIP based on InAs/AlGaAs QDs with which we demonstrate normal incidence photodetection in the 2-6 /xm range optically triggered by a 590 nm light-emitting diode. The theoretical study of the IB-assisted detection mechanism in the OTIP leads us to questioning the assumption of flat quasi-Fermi levels in the space-charge region of a solar cell. Based on device simulations, we prove and explain why this assumption is not valid under short-circuit and illumination conditions. We perform new experimental studies on InAs/GaAs QD-IBSC prototypes in order to gain knowledge on yet unexplored aspects of the performance of these devices. Specifically, we analyze the impact of the use of field-damping layers, and demonstrate this technique to be efficient for avoiding tunnel carrier escape from the QDs to the host material. We analyze the relationship between tunnel escape and voltage preservation, and propose voltage-dependent quantum efficiency measurements as an useful technique for assessing the tunneling-related limitation to the voltage preservation of QD-IBSC prototypes. Moreover, we perform temperature-dependent luminescence studies on InAs/GaAs samples and verify that the results are consistent with a split of the quasi-Fermi levels for the CB and the IB at low temperature. In order to contribute to the fabrication and characterization capabilities of the Solar Energy Institute of the Universidad Polite´cnica de Madrid (IES-UPM), we have participated in the installation and start-up of an molecular beam epitaxy (MBE) reactor and the development of a photo and electroluminescence characterization set-up. Using the MBE reactor, we have manufactured and characterized the first QD-IBSC fully fabricated at the IES-UPM.

Advances on MBE selective area growth of III-nitride nanostructures: from nanoLEDs to pseudo substrates

The aim of this work is to provide an overview on the recent advances in the selective area growth (SAG) of (In)GaN nanostructures by plasma assisted molecular beam epitaxy, focusing on their potential as building blocks for next generation LEDs. The first three sections deal with the basic growth mechanisms of GaN SAG and the emission control in the entire ultraviolet to infrared range, including approaches for white light emission, using InGaN disks and thick segments on axial nanocolumns. SAG of axial nanostructures is eveloped on both GaN/sapphire templates and GaN-buffered Si(111). As an alternative to axial nanocolumns, section 4 reports on the growth and characterization of InGaN/GaN core-shell structures on an ordered array of top-down patterned GaN microrods. Finally, section 5 reports on the SAG of GaN, with and without InGaN insertion, on semi-polar (11-22) and non-polar (11-20) templates. Upon SAG the high defect density present in the templates is strongly reduced as indicated by a dramatic improvement of the optical properties. In the case of SAG on nonpolar (11-22) templates, the formation of nanostructures with a low aspect ratio took place allowing for the fabrication of high-quality, non-polar GaN pseudo-templates by coalescence of these nanostructures.