924 resultados para TORSION ANGLE
Resumo:
An experimental investigation of a turbine stage featuring very high end wall angles is presented. The initial turbine design did not achieve a satisfactory performance and the difference between the design predictions and the test results was traced to a large separated region on the rear suction-surface. To improve the agreement between computational fluid dynamics (CFD) and experiment, it was found necessary to modify the turbulence modeling employed. The modified CFD code was then used to redesign the vane, and the changes made are described. When tested, the performance of the redesigned vane was found to have much closer agreement with the predictions than the initial vane. Finally, the flowfield and performance of the redesigned stage are compared to a similar turbine, designed to perform the same duty, which lies in an annulus of moderate end wall angles. A reduction in stage efficiency of at least 2.4% was estimated for the very high end wall angle design. © 2014 by ASME.
Resumo:
Compliant pneumatic actuators have attracted the interests of the robotics community especially for applications where large strokes are needed in delicate environments. This paper introduces a new type of compliant actuator that generates a large twisting deformation upon pressurization. This deformation is similar to torsion in solid mechanics, and can be characterized by a twisting angle along the longitudinal axis of the actuator. To produce prototype actuators, a new fabrication process is developed that uses soft lithography. With this process, prototype actuators with a width of 7mm and a thickness of 0.65mm have been produced that exhibit a twisting rotation of 6.5 degrees per millimeter length at a pressure of 178kPa. Besides design, fabrication and characterization, this paper will go into detail on stroke optimization. © 2013 IEEE.
Resumo:
The reduced divergence angle of the photonic crystal vertical-cavity surface-emitting laser (PC-VCSEL) was investigated in both theory and experiment. The photonic crystal waveguide possessed the weakly guiding waveguide characteristic, which accounted for the reduction of the divergence angle. The three-dimensional finite-difference time-domain method was used to simulate the designed PC-VCSEL, and a calculated divergence angle of 5.2 degrees was obtained. The measured divergence angles of our fabricated PC-VCSEL were between 5.1 degrees and 5.5 degrees over the entire drive current range, consistent with the numerical results. This is the lowest divergence angle of the fabricated PC-VCSEL ever reported.
Resumo:
We have fabricated a resonant-cavity-enhanced photodiode (RCE-PD) with InGaAs quantum dots (QDs) as an active medium. This sort of QD-embedded RCE-PD is capable of a peak external quantum efficiency of 32% and responsivity of 0.27A/W at 1.058 mu m with a full width at half maximum (FWHM) of 5 nm. Angle-resolved photocurrent response eventually proves that with the detection angle changing from 0 degrees to 60 degrees, the peak-current wavelength shifts towards the short wavelength side by 37 nm, while the quantum efficiency remains larger than 15%.
Resumo:
The microstructures of hydrogenated microcrystalline silicon (tic-Si: H) thin films, prepared by plasma-enhanced chemical vapor deposition (PECVD), hot wire CVD(HWCVD) and plasma assisted HWCVD (PE-HWCVD), have been analyzed by the small angle x-ray scattering(SAXS) measurement. The SAXS data show that the microstructures of the μ c-Si: H films display different characteristics for different deposition techniques. For films deposited by PECVD, the volume fraction of micro-voids and mean size are smaller than those in HWCVD sample. Aided by suitable ion-bombardment, PE-HWCVD samples show a more compact structure than the HWCVD sample. The microstructure parameters of the μ c-Si: H thin films deposited by two-steps HWCVD and PE-HWCVD with Ar ions are evidently improved. The result of 45° tilting SAXS measurement indicates that the distribution of micro-voids in the film is anisotropic. The Fouriertransform infrared spectra confirm the SAXS data.
Resumo:
A GaAs/AlGaAs two-dimensional electron gas (2 DEG) structure with the high mobility of mu(2K) = 1.78 x 10(6) cm(2)/Vs has been studied by low-temperature Hall and Shubnikov de Hass (SdH) measurements. Quantum lifetimes related to all-angle scattering events reduced from 0.64 ps to 0.52 ps after illuminating by Dingle plots, and transport lifetimes related to large-angle scattering events increasing from 42.3 ps to 67.8 ps. These results show that small-angle scattering events become stronger. It is clear that small-angle scattering events can cause the variation of the widths of the quantum Hall plateaus.
Resumo:
Many-beam dynamical simulations and observations have been made for large-angle convergent-beam electron diffraction (LACBED) imaging of crystal defects, such as stacking faults and dislocations. The simulations are based on a general matrix formulation of dynamical electron diffraction theory by Peng and Whelan, and the results are compared with experimental LACBED images of stacking faults and dislocations of Si angle crystals. Excellent agreement is achieved.
Resumo:
Magnetic multilayers [NixFe100-x/Mo-30] grown by dc-magnetron sputtering were investigated by x-ray small-angle reflection and high-angle diffraction. Structural parameters of the multilayers such as the superlattice periods, the interfacial roughness, and interplane distance were obtained. It was found that for our NixFe100-x/Mo system, the Mo layer has bcc structure with [110] preferential orientation, while the preferential orientation of the NixFe100-x layer changes from a fee structure with [111] preferential orientation to a bcc structure with [110] preferential orientation with decreasing values of x. An intermixing layer located in the interlayer region between the NixFe100-x and Mo layers exists in the multilayers, and its thickness is almost invariant with respect to an increase of Mo layer thickness and/or a decrease of x in the region of x greater than or equal to 39. The thickness of the intermixing layer falls to zero when x less than or equal to 23.