Spectral analysis of the angular distribution function of back reflectors for thin film silicon solar cells

Nowadays, one of the most important challenges to enhance the efficiency of thin film silicon solar cells is to increase the short circuit intensity by means of optical confinement methods, such as textured back-reflector structures. In this work, two possible textured structures to be used as back reflectors for n-i-p solar cells have been optically analyzed and compared to a smooth one by using a system which is able to measure the angular distribution function (ADF) of the scattered light in a wide spectral range (350-1000 nm). The accurate analysis of the ADF data corresponding to the reflector structures and to the μc-Si:H films deposited onto them allows the optical losses due to the reflector absorption and its effectiveness in increasing light absorption in the μc-Si:H layer, mainly at long wavelengths, to be quantified.

Jätteen määrän vähentäminen ja jätteenkäsittelymahdollisuuksien selvittäminen pinnoitetehtaassa

EU:n mukanaan tuomat uudet vaatimukset jätteenpoltolle aiheuttavat suuria muutoksia Dynea Overlays Oy:n jätteen käsittelylle. Samalla tehdasalueella tapahtuva jätteenpoltto päättyy todennäköisesti vuoden 2005 lopulla. Tästä syystä tehtaalla syntyville jätteille haettiin uusia hävitysreittejä. Jokaiselle jätejakeelle löydettiin uusi hävitysvaihtoehto, jotka pääosin ovat jätteen hyödyntämistä energiana. Pinnoitejätteet, kovetetut hartsit ja kuitujäte hyödynnetään energiana, tyhjät kertakäyttökontit joko otetaan uudelleenkäyttöön tai toimitetaan purettuina metallin- ja muovinkeräykseen. Työn toinen tavoite oli jätteen määrän vähentäminen. Jätteen määrää vähentämällä saadaan alennettua jätteenkäsittelykustannuksia sekä parannettua saantoa. Saanto on mittari, jota seurataan Dynean kaikilla pinnoitetehtailla ympäri maailmaa. Yrityksen johto on asettanut tavoitteeksi nostaa saannon vuoden 2003 tasolta 90 % tasolle 93 % vuoden 2004 loppuun mennessä. Jo vuoden 2004 ensimmäisinä kuukausina saanto näyttää parantuneen tavoitetasolle asiaan kiinnitetyn huomion ja tarkentuneen raportoinnin seurauksena.

Transmission properties of high barrier coated paperboard packages

High barrier materiaaleilla pyritään pidentämään pakattujen elintarvikkeiden hyllyikää. Barrierin tärkein tehtävä on elintarvikkeen suojaaminen hapelta ja kosteudelta. Alumiinin käyttöä barriermateriaalina pyritään vähentämään korvaamalla alumiini polymeereillä, jotka täyttävät elintarvikkeiden asettamat korkeat säilyvyysvaatimukset. Etyylivinyylialkoholin (EVOH) hapenläpäisevyys on kuivissa olosuhteissa alhaisin kaupallisista muovilaaduista. EVOH tarjoaa myös erinomaisen suojan muita kaasuja, rasvoja, hajuja ja aromeja vastaan ja sitä on helppo prosessoida. Polyamideilla on erinomainen kaasutiiveys sekä hyvä lujuus ja sitkeys. Eri muovilaatuja sekoittamalla voidaan vähentää hapenläpäisyä ja parantaa prosessointia. Polyolefiineja käytetään yleisesti päällystysmateriaaleina, koska ne suojaavat tuotetta erinomaisesti kosteudelta. Hapenläpäisyllä tarkoitetaan hapen kulkeutumista materiaalin läpi joko permeaation kautta tai reikien ja vuotojen läpi. Kaasun permeoitumiseen materiaalin läpi vaikuttavat materiaalin vapaa tilavuus, kiteisyysaste, orientaatio, substituointi, suhteellinen kosteus, lämpötila, barrierkerroksen paksuus, paine-ero ja permeoituvan molekyylin ominaisuudet. Kokeellisessa osassa analysoitiin ja vertailtiin kartonkipohjaisia mehutölkkejä, joissa käytettävät high barrier materiaalit olivat EVOH ja PA. Kartonkipohjaisia alumiinitölkkejä käytettiin referenssinä. Pakkausten hapenläpäisevyysmittauksissa saatiin samasta näytteestä toistettavia tuloksia, vaikka vuotomittauksissa saadut tulokset eivät olleet vertailukelpoisia hapenläpäisytulosten kanssa. Tölkkien valmistus vaikutti oleellisesti pakkausten tiiveysominaisuuksiin. Hapenläpäisy vuotojen ja reikien läpi oli merkittävämpää kuin hapenläpäisy materiaalin läpi. Pakkausten tiiveysominaisuuksia analysoitiin mittaamalla appelsiinimehun askorbiini-happopitoisuus. Askorbiinihapon hajoaminen mitattiin koetölkkeihin pakatusta appelsiinimehusta, ja lämpötilan, valon ja hapen vaikutusta askorbiinihapon hajoamiseen tutkittiin 12 viikon ajan. Lämpötilalla oli suurin vaikutus askorbiinihapon hajoamiseen huolimatta käytetystä pakkausmateriaalista.

Stability of hydrogenated nanocrystalline silicon thin-film transistors

Hydrogenated nanocrystalline silicon thin-films were obtained by catalytic chemical vapour deposition at low substrate temperatures (150°C) and high deposition rates (10 Å/s). These films, with crystalline fractions over 90%, were incorporated as the active layers of bottom-gate thin-film transistors. The initial field-effect mobilities of these devices were over 0.5 cm 2/V s and the threshold voltages lower than 4 V. In this work, we report on the enhanced stability of these devices under prolonged times of gate bias stress compared to amorphous silicon thin-film transistors. Hence, they are promising candidates to be considered in the future for applications such as flat-panel displays.

Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors

In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies. In thin-film transistors this effect leads to a higher threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the fieldeffect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies.

Amorphous silicon thin film solar cells deposited entirely by Hot-Wire Chemical Vapour Deposition at low temperature (<150 ºC)

Amorphous silicon n-i-p solar cells have been fabricated entirely by Hot-Wire Chemical Vapour Deposition (HW-CVD) at low process temperature < 150 °C. A textured-Ag/ZnO back reflector deposited on Corning 1737F by rf magnetron sputtering was used as the substrate. Doped layers with very good conductivity and a very less defective intrinsic a-Si:H layer were used for the cell fabrication. A double n-layer (μc-Si:H/a-Si:H) and μc-Si:H p-layer were used for the cell. In this paper, we report the characterization of these layers and the integration of these layers in a solar cell fabricated at low temperature. An initial efficiency of 4.62% has been achieved for the n-i-p cell deposited at temperatures below 150 °C over glass/Ag/ZnO textured back reflector.

Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by Hot-Wire CVD

Hydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). These devices were electrically characterised by measuring in vacuum the output and transfer characteristics for different temperatures. The field-effect mobility showed a thermally activated behaviour which could be attributed to carrier trapping at the band tails, as in hydrogenated amorphous silicon (a-Si:H), and potential barriers for the electronic transport. Trapped charge at the interfaces of the columns, which are typical in nc-Si:H, would account for these barriers. By using the Levinson technique, the quality of the material at the column boundaries could be studied. Finally, these results were interpreted according to the particular microstructure of nc-Si:H.

Microcrystalline silicon thin film transistors obtained by Hot-Wire CVD

Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques are in tough competition with the objective to obtain device-quality polysilicon thin films at low temperature. In this paper we present the preliminary results obtained with the fabrication of TFT deposited by hot-wire chemical vapor deposition (HWCVD). Some results concerned with the structural characterization of the material and electrical performance of the device are presented.

Thin Film Transistors obtained by Hot-Wire CVD

Hydrogenated microcrystalline silicon films obtained at low temperature (150-280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) spectroscopy and photothermal deflection spectroscopy (PDS). A crystalline fraction >90% with a subgap optical absortion 10 cm -1 at 0.8 eV were obtained in films deposited at growth rates >0.8 nm/s. These films were incorporated in n-channel thin film transistors and their electrical properties were measured. The saturation mobility was 0.72 ± 0.05 cm 2/ V s and the threshold voltage around 0.2 eV. The dependence of their conductance activation energies on gate voltages were related to the properties of the material.

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Recension

Hollywood Films in the Non-Western World: What Are the Criteria Followed by the Chinese Government When Choosing Hollywood Film Imports?

This dissertation argues that the Government of the People’s Republic of China, when it made the decision to import a quota of Hollywood films in 1994 to revive the failing domestic film industry, had different possible criteria in mind. This project has studied four of them: first, importing films that gave a negative image of the United States; second, importing films that featured Chinese talent or themes; third, importing films that were box office hits in the United States; and fourth, importing films with a strong technological innovation ingredient. In order to find out the most important criteria for the Chinese Government, this dissertation offers a dataset that analyzes a population of 262 Hollywood films released in the PRC between 1994 and 2010. For each unit, a method has been developed to compile data that will determine whether the film reflects any of the four criteria, and findings in the form of yearly percentages have been drawn. Results show that, out of the four studied criteria, the two predominant reasons for China to import films were technological innovation and box office hits. This tells us that, at this point, the Chinese Government shows more interest in obtaining big revenues and learning from technically innovative American films than in delivering underlying political messages. This dissertation contributes to the existing literature by analyzing the content of all the films imported by China between 1994 and 2010, while integrating in the analysis variables based on the existing knowledge.

The Transnational Zombie: Postcolonial Memory and Rage in the Recent European Horror Film

An ever increasing number of films, books, and scholarly works dealing with the undead have appeared in the last decade, making the zombie the very incarnation of American popular culture on a global scale. In this chapter I show that the zombie is also a surprisingly complex sign for transnational movement and multidirectional cultural flow. While the zombie may appear as the very epitome of American cultural production and influence, a mindless movie monster born of a vapid stream of Hollywood B-horror, the zombie has a rich transnational history and an eloquent figurative resonance that have fed into its current ubiquity as cultural sign. This chapter reviews that history and then examines some of the ways that the zombie figure has traveled between the Caribbean, where it emerged, the United States, where it was translated into a film device of startling pathos and horror, and Europe, to which it owes some of its most interesting recent innovations.