Thin Film Transistors obtained by Hot-Wire CVD
Contribuinte(s) |
Universitat de Barcelona |
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Resumo |
Hydrogenated microcrystalline silicon films obtained at low temperature (150-280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) spectroscopy and photothermal deflection spectroscopy (PDS). A crystalline fraction >90% with a subgap optical absortion 10 cm -1 at 0.8 eV were obtained in films deposited at growth rates >0.8 nm/s. These films were incorporated in n-channel thin film transistors and their electrical properties were measured. The saturation mobility was 0.72 ± 0.05 cm 2/ V s and the threshold voltage around 0.2 eV. The dependence of their conductance activation energies on gate voltages were related to the properties of the material. |
Identificador | |
Idioma(s) |
eng |
Publicador |
Elsevier B.V. |
Direitos |
(c) Elsevier B.V., 2000 info:eu-repo/semantics/openAccess |
Palavras-Chave | #Silici #Pel·lícules fines #Transistors #Deposició química en fase vapor #Temperatures baixes #Semiconductors amorfs #Silicon #Thin films #Transistors #Chemical vapor deposition #Low temperatures #Amorphous semiconductors |
Tipo |
info:eu-repo/semantics/article info:eu-repo/semantics/acceptedVersion |