Thin Film Transistors obtained by Hot-Wire CVD


Autoria(s): Puigdollers i González, Joaquim; Orpella, A.; Dosev, D.; Voz Sánchez, Cristóbal; Pallarés Curto, Jordi; Marsal Garví, Lluís F. (Lluís Francesc); Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi; Alcubilla González, Ramón; Peiró, D.
Contribuinte(s)

Universitat de Barcelona

Resumo

Hydrogenated microcrystalline silicon films obtained at low temperature (150-280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) spectroscopy and photothermal deflection spectroscopy (PDS). A crystalline fraction >90% with a subgap optical absortion 10 cm -1 at 0.8 eV were obtained in films deposited at growth rates >0.8 nm/s. These films were incorporated in n-channel thin film transistors and their electrical properties were measured. The saturation mobility was 0.72 ± 0.05 cm 2/ V s and the threshold voltage around 0.2 eV. The dependence of their conductance activation energies on gate voltages were related to the properties of the material.

Identificador

http://hdl.handle.net/2445/47417

Idioma(s)

eng

Publicador

Elsevier B.V.

Direitos

(c) Elsevier B.V., 2000

info:eu-repo/semantics/openAccess

Palavras-Chave #Silici #Pel·lícules fines #Transistors #Deposició química en fase vapor #Temperatures baixes #Semiconductors amorfs #Silicon #Thin films #Transistors #Chemical vapor deposition #Low temperatures #Amorphous semiconductors
Tipo

info:eu-repo/semantics/article

info:eu-repo/semantics/acceptedVersion