红外飞秒激光诱导Ce^3＋掺杂闪烁晶体的上转换发光研究

本文研究了红外飞秒激光照射下Ce^3＋ 掺杂的YAP和LSO两种闪烁晶体的上转换发光现象.实验发现在飞秒激光泵浦下,这两种晶体的荧光均来自于Ce^3＋离子的5d-4f跃迁.荧光强度与泵浦光功率之间的依赖关系揭示了Ce^3＋：YAP和Ce^3＋：LSO晶体的上转换过程皆由三光子吸收过程所主导.分析表明,Ce^3＋：YAP和Ce^3＋：LSO晶体中的三光子吸收是三光子同时吸收.

Tipos humanos particularmente estranhos: a síndrome de Asperger como objeto cultural.

A extraordinária atenção social e cultural que nas últimas décadas tem se dado ao diagnóstico do autismo/síndrome de Asperger convida a uma reflexão mais ampla para contextualizar o seu acontecimento como objeto cultural. É nesta direção que se move o presente trabalho, buscando identificar as coordenadas sociais, institucionais e culturais que levaram a tal exposição da deficiência relacional. Fala da história do espectro do autismo e sua pré-história ou a investigação sobre como as formas de não-conformidade com as expectativas da interação na presença do outro foram contextualizados, antes do modelo médico e em seus primeiros dias. Além disso, também têm procurado articular o discurso da contextualização cultural do espectro do autismo na area dos estudos sobre a deficiência chamada Critical Autism Studies por meio de um levantamento analítico dos autores e dos temas.

Tipos humanos particularmente estranhos: a síndrome de Asperger como objeto cultural.

A extraordinária atenção social e cultural que nas últimas décadas tem se dado ao diagnóstico do autismo/síndrome de Asperger convida a uma reflexão mais ampla para contextualizar o seu acontecimento como objeto cultural. É nesta direção que se move o presente trabalho, buscando identificar as coordenadas sociais, institucionais e culturais que levaram a tal exposição da deficiência relacional. Fala da história do espectro do autismo e sua pré-história ou a investigação sobre como as formas de não-conformidade com as expectativas da interação na presença do outro foram contextualizados, antes do modelo médico e em seus primeiros dias. Além disso, também têm procurado articular o discurso da contextualização cultural do espectro do autismo na area dos estudos sobre a deficiência chamada Critical Autism Studies por meio de um levantamento analítico dos autores e dos temas.

Molecular dynamics research of G249 and S249 substitutions of p53 protein.

,The molecular dynamics research of the core domain of p53 protein crystal structure shows that besides the stability in biochemistry this domain also shows a high stability in molecular mechanics. Based on that work, the residue R249 was substituted with amino acids Gly and Ser respectively, and molecular dynamics researches were performed separately. The results show that these substitutions cause a relax tendency between loop2 and 3 domains, leading to an alteration of the whole conformation of p53 core domain and ruining its stability. The results visually explains the mechanism of p53 changes in immunological and biochemical reactions, which are caused by 249 residue substitutions from 3-D structure variations.

Improved transmission performance of adaptively modulated optical OFDM signals over directly modulated DFB laser-based IMDD links using adaptive cyclic prefix.

The impact of Adaptive Cyclic Prefix (ACP) on the transmission performance of Adaptively Modulated Optical OFDM (AMOOFDM) is explored thoroughly in directly modulated DFB laser-based, IMDD links involving Multimode Fibres (MMFs)/Single-Mode Fibres (SMFs). Three ACP mechanisms are identified, each of which can, depending upon the link properties, affect significantly the AMOOFDM transmission performance. In comparison with AMOOFDM having a fixed cyclic prefix duration of 25%, AMOOFDM with ACP can not only improve the transmission capacity by a factor of >2 (>1.3) for >1000 m MMFs (<80 km SMFs) with 1 dB link loss margin enhancement, but also relax considerably the requirement on the DFB bandwidth.

7dB optical power budget improvements of 11.25Gb/s optical OFDM PON systems using optical filters

Wavelength offset super Gaussian optical filters enable 7dB increases in optical power budget of 11.25Gb/s optical OFDM PON systems using directly modulated DFBs, considerably relax filter bandwidth requirement and improve performance robustness to bandwidth variation. © 2011 Optical Society of America.

Estimating and Enhancing the Yield of Tuneling SRAM Cells by Simulation

As a novel implementation of the static random access memory (SRAM), the tunneling SRAM (TSRAM) uses the negative differential resistance of tunnel diodes (TD’s) and potentially offers considerable improvements in both standby power dissipation and integration density compared to the conventional CMOS SRAM. TSRAM has not yet been realized with a useful bit capacity mainly because the level of uniformity required of the nanoscale TD’s has been demanding and difficult to achieve. In this letter, we propose a Monte Carlo approach for estimating the yield of TSRAM cells and show that by optimizing the cell’s external circuit parameters, we can relax the allowable tolerance of a key device parameter of a resonant-TD-(RTD) based cell by three times.

Gaussian Process Vine Copulas for Multivariate Dependence

Copulas allow to learn marginal distributions separately from the multivariate dependence structure (copula) that links them together into a density function. Vine factorizations ease the learning of high-dimensional copulas by constructing a hierarchy of conditional bivariate copulas. However, to simplify inference, it is common to assume that each of these conditional bivariate copulas is independent from its conditioning variables. In this paper, we relax this assumption by discovering the latent functions that specify the shape of a conditional copula given its conditioning variables We learn these functions by following a Bayesian approach based on sparse Gaussian processes with expectation propagation for scalable, approximate inference. Experiments on real-world datasets show that, when modeling all conditional dependencies, we obtain better estimates of the underlying copula of the data.

Evolution of Ge and SiGe quantum dots under excimer laser annealing

We present different relaxation mechanisms of Ge and SiGe quantum dots under excimer laser annealing. Investigation of the coarsening and relaxation of the dots shows that the strain in Ge dots on Ge films is relaxed by dislocation since there is no interface between the Ge dots and the Ge layer, while the SiGe dots on Si0.77Ge0.23 film relax by lattice distortion to coherent clots, which results from the obvious interface between the SiGe clots and the Si0.77Ge0.23 film. The results are suggested and sustained by Vanderbilt and Wickham's theory, and also demonstrate that no bulk diffusion oGeurs during the excimer laser annealing.

Ordered Zinc Antimonate Nanoisland Attachment and Morphology Control of ZnO Nanobelts by Sb Doping

Hierarchical heterostructures of zinc antimonate nanoislands on ZnO nanobelts were prepared by simple annealing of the polymeric precursor. Sb can promote the growth of ZnO nanobelts along the [552] direction because of the segregation of Sb dopants on the +(001) and (110) surfaces of ZnO nanobelts. Furthermore, the ordered nanoislands of toothlike ZnSb2O6 along the [001](ZnO) direction and rodlike Zn7Sb2O12 along the [110](ZnO) direction can be formed because of the match relation of the lattice and polar charges between ZnO and zinc antimonate. The incorporation of Sb in a ZnO lattice induces composition fluctuation, and the growth of zinc antimonate nanoislands on nanobelt sides induces interface fluctuation, resulting in dominance of the bound exciton transition in the room temperature near-band-edge (NBE) emission at relatively low excitation intensity. At high excitation intensity, however, Auger recombination makes photogenerated electrons release phonon and relax from the conduction band to the trap states, causing the NBE emission to gradually saturate and redshift with increasing excitation intensity. The green emission more reasonably originates from the recombination of electrons in shallow traps with doubly charged V-O** oxygen vacancies. Because a V-O** center can trap a photoactivated electron and change to a singly charged oxygen vacancy V-O* state, its emission intensity exhibits a maximum with increasing excitation intensity.

High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T

Patterning sapphire substrate can relax the stress in the nitride epilayer, reduce the threading dislocation density, and significantly improve device performance. In this article, a wet-etching method for sapphire substrate is developed. The effect of substrate surface topographies on the quality of the GaN epilayers and corresponding device performance are investigated. The GaN epilayers grown on the wet-patterned sapphire substrates by MOCVD are characterized by means of scanning electrical microscopy (SEM), atomic force microscopy (AFM), high-resolution x-ray diffraction (HRXRD), and photoluminescence (PL) techniques. In comparison with the planar sapphire substrate, about a 22% increase in device performance with light output power of 13.31 mW@20mA is measured for the InGaN/GaN blue LEDs grown on the wet-patterned sapphire substrate.

Reliable concentrated photovoltaic system with compound concentrator

Concentrated photovoltaic systems (CPVSs) draw more and more attention because of high photovoltaic conversion efficiency, low consumption of solar cell, and low cost of power generation. However, the fallibility of the tracker in such systems has hindered their practical application for more than twenty years. The tracker is indispensable for a CPVS since only normal-incident sunlight can be focused on the solar cell chips, even a slight deviation of incident light will result in a significant loss of solar radiation, and hence a distinct decrease in electricity output. Generally, the more accurate the tracker is, the more reliable the system is. However, it is not exactly the case for a CPVS reliability, because the more accurate the tracker is, the better environment it demands. A CPVS is usually has to subjected to harsh environmental conditions, such as strong wind, heavy rain or snow, and huge changes of temperature, which leads to the invalidation of the system's high-accuracy tracker. Hence, the reliability of a CPVS cannot be improved only by enhancing the tracker's accuracy. In this paper, a novel compound concentrator, combination of Fresnel lens and photo-funnel, has been adopted in a prototype CPVS. Test results show that the compound concentrator can relax the angle tolerance from one tenth to five degrees of arc at 400 suns, which can help a CPVS endure serious environment and remain its reliability over long period. The CPVS with compound concentrator is attractive for commercial application.

澜沧江姬鼠（Apodemus ilex）种群遗传结构及其生物地理分析

澜沧江姬鼠（Apodemus ilex）为小型啮齿类动物，长期以来常被认为是中华姬鼠（A. draco）或长尾姬鼠（A. orestes）的同物异名，但近年基于线粒体Cyt b 的研究证明，该类群与中华姬鼠的遗传距离达到了种间水平，并被认为是一个独立种。本文提取、扩增并测定了来自云南14个地区42个产地156个澜沧江姬鼠的Cyt b 全序列，并将GenBank中的3条澜沧江姬鼠的Cyt b 全序列纳入分析，选取福建武夷山与四川峨眉山的2个中华姬鼠样品的Cyt b 全序列，以及台湾姬鼠、大耳姬鼠、高山姬鼠Cyt b 全序列作为外群，利用贝叶斯法和最大似然法构建系统发育树，并使用Network分析，分子变异分析（AMOVA）分析、错配分析（Mismatch analysis）与Fu`Fs检验等方法，探讨了这些地区澜沧江姬鼠的种群遗传结构，种群动态及生物地理格局。结果表明：云南地区过去被鉴定为中华姬鼠的样品均属于澜沧江姬鼠，澜沧江姬鼠与中华姬鼠间的遗传距离（K2P-ds+v）达到0.091，显著超过姬鼠属内种间差距（0.080），支持澜沧江姬鼠独立种的地位；该种不同地理种群可大致以澜沧江为界分为两大支系，且每个支系又各分为两个亚支系；进一步的AMOVA分析表明遗传变异主要来源于两大支系之间，而错配分析与Fu`Fs检验表明澜沧江姬鼠各地理种群及其两个支系都经历过多次扩张事件，这可能是和冰期与间冰期的轮回交替有关；分子系统树和中介网络图表明地理环境的隔离对于澜沧江姬鼠种群分化存在明显影响，其中澜沧江的阻隔作用最为显著。基于松散分子钟（Relax molecular clock）分析，中华姬鼠和澜沧江姬鼠的分歧时间大约在2.98 Ma（95％HPD: 4.32-1.88），而澜沧江姬鼠则在1.13 Ma（95％HPD: 1.95-0.65）分成两个支系。按照平均分歧时间来看，澜沧江姬鼠两个支系的的分歧事件发生在鄱阳冰期（1.2-0.9 Ma），两个支系内部进一步分化为两支的时间非常接近，分别为：Clade 1中为0.67 Ma （95％HPD: 1.17-0.34）和Clade 2 中为0.64 Ma (95％HPD: 1.17-0.36)，这种隔离种群各自产生分化的时间却非常接近，这提示其分化事件可能是受到古气候如冰期或间冰期的影响所产生。

NEW FORMATION MECHANISM OF ELECTRIC-FIELD DOMAIN DUE TO GAMMA-X SEQUENTIAL TUNNELING IN GAAS/ALAS SUPERLATTICES

We have studied the sequential tunneling of doped weakly coupled GaAs/ALAs superlattices (SLs), whose ground state of the X valley in AlAS layers is designed to be located between the ground state (E(GAMMA1)) and the first excited state (E(GAMMA2)) of the GAMMA valley in GaAs wells. The experimental results demonstrate that the high electric field domain in these SLs is attributed to the GAMMA-X sequential tunneling instead of the usual sequential resonant tunneling between subbands in adjacent wells. Within this kind of high field domain, electrons from the ground state in the GaAs well tunnel to the ground state of the X valley in the nearest AlAs layer, then through very rapid real-space transfer relax from the X valley in the AlAs layer to the ground state of the GAMMA valley of the next GaAs well.

The Incident Angle Dependence of Quantum Efficiency of GaAs Based RCE Photodetectors

The theoretical analysis and experimental measurement on the incident angle dependence of quantum efficiency of GaAs based resonant cavity enhanced (RCE) photodetector is presented. By changing the angle of incoming light, about 40 nm wavelength variation of peak quantum efficiency is obtained. The peak quantum efficiency and optical bandwidth at different mode corresponding to different angle incidence is characterized with different absorption dependence on wavelength. The convenient angle tuning of resonant mode will be helpful to relax the strict constraint of RCE photodetector to light source with narrow emission spectrum such applications in space optical detections and communications.