Transistors elettrochimici organici e la loro applicazione come sensori.

La presente tesi tratta della fabbricazione e del funzionamento di transistors elettrochimici organici (OECTs) composti da fi�lm sottili di poly(3,4-ethylenedioxythiophene) disperso con polystyrenesulfonic acid, o PEDOT:PSS, oltre che del loro possibile utilizzo come sensori. La trattazione si apre con una panoramica sui polimeri conduttivi, siano essi puri o drogati, e sulle loro caratteristiche chimiche ed elettriche: diversi metodi di drogaggio consentono il loro utilizzo come semiconduttori. Tra questi polimeri, il PEDOT �e uno dei pi�u utilizzati poich�e presenta accessibilit�a d'uso e ottima stabilit�a nel suo stato drogato, pur risultando insolubile in acqua; per ovviare a questo problema lo si polimerizza con PSS. Le propriet�a di questo composto sono poi ampiamente discusse, soprattutto in ambito di applicazioni tecniche, per le quali �e neccessario che il polimero in soluzione sia depositato su un substrato. A questo scopo vengono presentate le principali techiche che consentono la deposizione, permettendo di creare fil�lm sottili di materiale da utilizzarsi, nell'ambito di questa tesi, come gate e canale dei transistors elettrochimici. A seguire viene esposta la struttura degli OECTs e spiegato il loro funzionamento, modellizzando i dispositivi con un semplice circuito elettrico. Il confronto dei meno noti OECTs con i meglio conosciuti transistors a eff�etto campo semplifi�ca la comprensione del funzionamento dei primi, i quali sono rilevanti ai fi�ni di questa trattazione per il loro possibile funzionamento come sensori. In seguito alla spiegazione teorica, vengono illustrati i metodi seguiti per la deposizione di �film sottili di PEDOT:PSS tramite Spin Coating e per la fabbricazione degli OECTs su cui sono state eff�ettuate le misure, le quali sono state scelte e presentate in base ai risultati gi�a ottenuti in letteratura e a seconda dei dati ritenuti necessari alla caratterizzazione del transistor elettrochimico nell'ottica di un suo possibile utilizzo come sensore. Perci�o sono state eseguite misure amperometriche in funzione delle tensioni di gate e di drain, alternatamente tenendo costante una e variando l'altra, oltre che in funzione della concentrazione di elettrolita, dell'area del canale e del tempo. In conclusione sono presentati i dati sperimentali ottenuti ed una loro analisi.

The influence of film morphology on solution processed organic field-effect transistors

Organic field-effect transistors (OFETs) are becoming interesting owing to their prospective application as cheap, bendable and light weight electronic devices rnlike flexible displays. However, the bottleneck of OFETs is their typically low charge carrier mobilities. An effective and crucial route towards circumventing thisrnhurdle is the control of organic semiconductor thin film morphology which critically determine charge carrier transport. In this work, the influence of film morphologyrnis highlighted together with its impact on OFET transistor performance.

Self-Assembled Monolayers (SAMs) in Organic Field-Effect Transistors

Organic printed electronics is attracting an ever-growing interest in the last decades because of its impressive breakthroughs concerning the chemical design of π-conjugated materials and their processing. This has an impact on novel applications, such as flexible-large-area displays, low- cost printable circuits, plastic solar cells and lab-on-a-chip devices. The organic field-effect transistor (OFET) relies on a thin film of organic semiconductor that bridges source and drain electrodes. Since its first discovery in the 80s, intensive research activities were deployed in order to control the chemico-physical properties of these electronic devices and consequently their charge. Self-assembled monolayers (SAMs) are a versatile tool for tuning the properties of metallic, semi-conducting, and insulating surfaces. Within this context, OFETs represent reliable instruments for measuring the electrical properties of the SAMs in a Metal/SAM/OS junction. Our experimental approach, named Charge Injection Organic-Gauge (CIOG), uses OTFT in a charge-injection controlled regime. The CIOG sensitivity has been extensively demonstrated on different homologous self-assembling molecules that differ in either chain length or in anchor/terminal group. One of the latest applications of organic electronics is the so-called “bio-electronics” that makes use of electronic devices to encompass interests of the medical science, such as biosensors, biotransducers etc… As a result, thee second part of this thesis deals with the realization of an electronic transducer based on an Organic Field-Effect Transistor operating in aqueous media. Here, the conventional bottom gate/bottom contact configuration is replaced by top gate architecture with the electrolyte that ensures electrical contact between the top gold electrode and the semiconductor layer. This configuration is named Electrolyte-Gated Field-Effect Transistor (EGOFET). The functionalization of the top electrode is the sensing core of the device allowing the detection of dopamine as well as of protein biomarkers with ultra-low sensitivity.

Optimization of purification procedures in organic semiconductor synthesis for improving the performances of organic field-effect transistors

The aim of the research activity focused on the investigation of the correlation between the degree of purity in terms of chemical dopants in organic small molecule semiconductors and their electrical and optoelectronic performances once introduced as active material in devices. The first step of the work was addressed to the study of the electrical performances variation of two commercial organic semiconductors after being processed by means of thermal sublimation process. In particular, the p-type 2,2′′′-Dihexyl-2,2′:5′,2′′:5′′,2′′′-quaterthiophene (DH4T) semiconductor and the n-type 2,2′′′- Perfluoro-Dihexyl-2,2′:5′,2′′:5′′,2′′′-quaterthiophene (DFH4T) semiconductor underwent several sublimation cycles, with consequent improvement of the electrical performances in terms of charge mobility and threshold voltage, highlighting the benefits brought by this treatment to the electric properties of the discussed semiconductors in OFET devices by the removal of residual impurities. The second step consisted in the provision of a metal-free synthesis of DH4T, which was successfully prepared without organometallic reagents or catalysts in collaboration with Dr. Manuela Melucci from ISOF-CNR Institute in Bologna. Indeed the experimental work demonstrated that those compounds are responsible for the electrical degradation by intentionally doping the semiconductor obtained by metal-free method by Tetrakis(triphenylphosphine)palladium(0) (Pd(PPh3)4) and Tributyltin chloride (Bu3SnCl), as well as with an organic impurity, like 5-hexyl-2,2':5',2''-terthiophene (HexT3) at, in different concentrations (1, 5 and 10% w/w). After completing the entire evaluation process loop, from fabricating OFET devices by vacuum sublimation with implemented intentionally-doped batches to the final electrical characterization in inherent-atmosphere conditions, commercial DH4T, metal-free DH4T and the intentionally-doped DH4T were systematically compared. Indeed, the fabrication of OFET based on doped DH4T clearly pointed out that the vacuum sublimation is still an inherent and efficient purification method for crude semiconductors, but also a reliable way to fabricate high performing devices.

Interfacial interactions, charge transport and growth phenomena in Organic Field Effect Transistors

Organic electronics is an emerging field with a vast number of applications having high potential for commercial success. Although an enormous progress has been made in this research area, many organic electronic applications such as organic opto-electronic devices, organic field effect transistors and organic bioelectronic devices still require further optimization to fulfill the requirements for successful commercialization. The main bottle neck that hinders large scale production of these devices is their performances and stability. The performance of the organic devices largely depends on the charge transport processes occurring at the interfaces of various material that it is composed of. As a result, the key ingredient needed for a successful improvement in the performance and stability of organic electronic devices is an in-depth knowledge of the interfacial interactions and the charge transport phenomena taking place at different interfaces. The aim of this thesis is to address the role of the various interfaces between different material in determining the charge transport properties of organic devices. In this framework, I chose an Organic Field Effect Transistor (OFET) as a model system to carry out this study as it An OFET offers various interfaces that can be investigated as it is made up of stacked layers of various material. In order to probe the intrinsic properties that governs the charge transport, we have to be able to carry out thorough investigation of the interactions taking place down at the accumulation layer thickness. However, since organic materials are highly instable in ambient conditions, it becomes quite impossible to investigate the intrinsic properties of the material without the influence of extrinsic factors like air, moisture and light. For this reason, I have employed a technique called the in situ real-time electrical characterization technique which enables electrical characterization of the OFET during the growth of the semiconductor.

Control over microstructure evolution and device performance in solution processable organic field-effect transistors

Die Arbeit beschäftigt sich mit der Kontrolle von Selbstorganisation und Mikrostruktur von organischen Halbleitern und deren Einsatz in OFETs. In Kapiteln 3, 4 und 5 eine neue Lösungsmittel-basierte Verabeitungsmethode, genannt als Lösungsmitteldampfdiffusion, ist konzipiert, um die Selbstorganisation von Halbleitermolekülen auf der Oberfläche zu steuern. Diese Methode als wirkungsvolles Werkzeug erlaubt eine genaue Kontrolle über die Mikrostruktur, wie in Kapitel 3 am Beispiel einer D-A Dyad bestehend aus Hexa-peri-hexabenzocoronene (HBC) als Donor und Perylene Diimide (PDI) als Akzeptor beweisen. Die Kombination aus Oberflächenmodifikation und Lösungsmitteldampf kann die Entnetzungseffekte ausgleichen, so dass die gewüschte Mikrostruktur und molekulare Organisation auf der Oberfläche erreicht werden kann. In Kapiteln 4 und 5 wurde diese Methode eingesetzt, um die Selbstorganisation von Dithieno[2, 3-d;2’, 3’-d’] benzo[1,2-b;4,5-b’]dithiophene (DTBDT) und Cyclopentadithiophene -benzothiadiazole copolymer (CDT-BTZ) Copolymer zu steuern. Die Ergebnisse könnten weitere Studien stimulieren und werfen Licht aus andere leistungsfaähige konjugierte Polymere. rnIn Kapiteln 6 und 7 Monolagen und deren anschlieβende Mikrostruktur von zwei konjugierten Polymeren, Poly (2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) PBTTT und Poly{[N,N ′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis (dicarboximide)-2,6-diyl]-alt-5,5′- (2,2′-bithiophene)}, P(NDI2OD-T2)) wurden auf steife Oberflächen mittels Tauchbeschichtung aufgebracht. Da sist das erste Mal, dass es gelungen ist, Polymer Monolagen aus der Lösung aufzubringen. Dieser Ansatz kann weiter auf eine breite Reihe von anderen konjugierten Polymeren ausgeweitet werden.rnIn Kapitel 8 wurden PDI-CN2 Filme erfolgreich von Monolagen zu Bi- und Tri-Schichten auf Oberflächen aufgebracht, die unterschiedliche Rauigkeiten besitzen. Für das erste Mal, wurde der Einfluss der Rauigkeit auf Lösungsmittel-verarbeitete dünne Schichten klar beschrieben.rn

Novel transparent and flexible transistors for radiation harsh environment

La scoperta dei semiconduttori amorfi ha segnato l’era della microelettronica su larga scala rendendo possibile il loro impiego nelle celle solari o nei display a matrice attiva. Infatti, mentre i semiconduttori a cristalli singoli non sono consoni a questo tipo di applicazioni e i s. policristallini presentano il problema dei bordi di grano, i film amorfi possono essere creati su larga scala (>1 m^2) a basse temperature (ad es. <400 °C) ottenendo performance soddisfacenti sia su substrati rigidi che flessibili. Di recente la ricerca sta compiendo un grande sforzo per estendere l’utilizzo di questa nuova elettronica flessibile e su larga scala ad ambienti soggetti a radiazioni ionizzanti, come lo sono i detector di radiazioni o l’elettronica usata in applicazioni spaziali (satelliti). A questa ricerca volge anche la mia tesi, che si confronta con la fabbricazione e la caratterizzazione di transistor a film sottili basati su ossidi semiconduttori ad alta mobilità e lo studio della loro resistenza ai raggi X. La micro-fabbricazione, ottimizzazione e caratterizzazione dei dispositivi è stata realizzata nei laboratori CENIMAT e CEMOP dell’Università Nova di Lisbona durante quattro mesi di permanenza. Tutti i dispositivi sono stati creati con un canale n di ossido di Indio-Gallio-Zinco (IGZO). Durante questo periodo è stato realizzato un dispositivo dalle ottime performance e con interessanti caratteristiche, una delle quali è la non variazione del comportamento capacitivo in funzione della frequenza e la formidabile resistenza alle radiazioni. Questo dispositivo presenta 114 nm di dielettrico, realizzato con sette strati alternati di SiO2/ Ta2O5. L’attività di ricerca svolta al Dipartimento di Fisica e Astronomia di Bologna riguarda prevalentemente lo studio degli effetti delle radiazioni ionizzanti su TFTs. Gli esperimenti hanno rivelato che i dispositivi godono di una buona stabilità anche se soggetti alle radiazioni. Infatti hanno mostrato performance pressoché inalterate anche dopo un’esposizione a 1 kGy di dose cumulativa di raggi X mantenendo circa costanti parametri fondamentali come la mobilità, il threshold voltage e la sub-threshold slope. Inoltre gli effetti dei raggi X sui dispositivi, così come parametri fondamentali quali la mobilità, si sono rivelati essere notevolmente influenzati dallo spessore del dielettrico.

Modeling multiple state electrostatically formed nanowire transistors

The present thesis work proposes a new physical equivalent circuit model for a recently proposed semiconductor transistor, a 2-drain MSET (Multiple State Electrostatically Formed Nanowire Transistor). It presents a new software-based experimental setup that has been developed for carrying out numerical simulations on the device and on equivalent circuits. As of 2015, we have already approached the scaling limits of the ubiquitous CMOS technology that has been in the forefront of mainstream technological advancement, so many researchers are exploring different ideas in the realm of electrical devices for logical applications, among them MSET transistors. The idea that underlies MSETs is that a single multiple-terminal device could replace many traditional transistors. In particular a 2-drain MSET is akin to a silicon multiplexer, consisting in a Junction FET with independent gates, but with a split drain, so that a voltage-controlled conductive path can connect either of the drains to the source. The first chapter of this work presents the theory of classical JFETs and its common equivalent circuit models. The physical model and its derivation are presented, the current state of equivalent circuits for the JFET is discussed. A physical model of a JFET with two independent gates has been developed, deriving it from previous results, and is presented at the end of the chapter. A review of the characteristics of MSET device is shown in chapter 2. In this chapter, the proposed physical model and its formulation are presented. A listing for the SPICE model was attached as an appendix at the end of this document. Chapter 3 concerns the results of the numerical simulations on the device. At first the research for a suitable geometry is discussed and then comparisons between results from finite-elements simulations and equivalent circuit runs are made. Where points of challenging divergence were found between the two numerical results, the relevant physical processes are discussed. In the fourth chapter the experimental setup is discussed. The GUI-based environments that allow to explore the four-dimensional solution space and to analyze the physical variables inside the device are described. It is shown how this software project has been structured to overcome technical challenges in structuring multiple simulations in sequence, and to provide for a flexible platform for future research in the field.

Sintesi e caratterizzazione di nuovi materiali politioalchiltiofenici per applicazioni in celle solari bulk-heterojunction

L’oggetto della presente tesi di laurea magistrale consiste nello studio di polimeri coniugati nella catena principale, per una loro applicazione come materiali fotoattivi in celle fotovoltaiche. In particolare, sono stati sintetizzati e caratterizzati politiofeni tioalchil sostituiti, funzionalizzati in posizione 3-3' con catene alchiliche di diversa lunghezza e grado di ramificazione (tra cui una chirale), al fine di studiarne l'effetto sulle proprietà ottiche ed elettriche del materiale. I polimeri ottenuti sono stati caratterizzati mediante tecniche spettroscopiche (1H-NMR, UV-PL), cromatografia a permeazione su gel (GPC), analisi termiche (DSC, TGA) e misure elettrochimiche (voltammetria ciclica). Il comportamento chiro-ottico del campione chirale è stato inoltre valutato tramite misure di dicroismo circolare. Si è infine testata l’efficienza delle celle fotovoltaiche ottenute utilizzando i polimeri sintetizzati come materiale fotoattivo.

Pretreatment and outcome correlates of past sexual and physical trauma in 118 bipolar I disorder patients with a first episode of psychotic mania

To assess the prevalence and correlates of childhood and adolescent sexual and/or physical abuse (SPA) in bipolar I disorder (BDI) patients treated for a first episode of psychotic mania.

Bipolar disorder susceptibility region on chromosome 3q29 not confirmed in a case-control association study

We identified a bipolar disorder (BPD) susceptibility region on chromosome 3q29 in a genome-wide linkage scan (Bailer et al. 2002 (Biol Psychiatry 52: 40), NPL-score 4.09) and follow-up linkage analysis (Schosser et al. 2004 (J Psychiatr Res 38(3): 357), NPL-scores >3 with five markers). These findings were supported by further fine-mapping of this region (Schosser et al. 2007 (Eur Neuropsychopharmacol 17(6-7): 501)), finding NPL-scores >3.9 with SNPs (single nucleotide polymorphisms) spanning a region of 3.46 Mbp in BPD families. Since genetic association studies are more powerful than linkage studies for detecting susceptibility genes of small effect size, we aimed to replicate these findings in an independent case-control sample collected in London (UK) and Vienna (Austria).

Differentiating schizoaffective and bipolar I disorder in first-episode psychotic mania

This study aims to differentiate schizoaffective disorder (SAD) and bipolar-I-disorder (BD) in first-episode psychotic mania (FEPM).

Rationale and first results of developing at-risk (prodromal) criteria for bipolar disorder

Bipolar affective disorder (BD) is a severe, recurrent and disabling disorder with devastating consequences for individuals, families and society. Although these hazards and costs provide a compelling rationale for development of early detection and early intervention strategies in BD, the development of at-risk criteria for first episode mania is still in an early stage of development. In this paper we review the literature with respect to the clinical, neuroantomical and neuropsychological data, which support this goal. We also describe our recently developed bipolar at-risk criteria (BAR). This criteria comprises the peak age range of the first onset of bipolar disorder, genetic risk, presenting with sub-threshold mania, cyclothymic features or depressive symptoms. An initial pilot evaluation of the BAR criteria in 22 subjects indicated conversion rates to proxies of first-episode mania of 23% within 265 days on average, and high specificity and sensitivity of the criteria. If prospective studies confirm the validity of the BAR criteria, then the criteria would have the potential to open up new avenues of research for indicated prevention in BD and might therefore offer opportunities to ameliorate the severity of, or even prevent BD.