Chlorometallate(III) ionic liquids as Lewis acidic catalysts - a quantitative study of acceptor properties

The Gutmann Acceptor Number (AN), which is a quantitative measure of Lewis acidity, has been estimated using the P-31 NMR chemical shift of a probe molecule, triethylphosphine oxide, for a range of chlorometallate(III) ionic liquids, based on Group 13 metals (aluminium(III), gallium(III) and indium(III)) and the 1-octyl-3-methylimidazolium cation, at different compositions. The results were interpreted in terms of extant speciation studies of chlorometallate(III) ionic liquids, and compared with a range of standard molecular solvents and acids. The value of these data were illustrated in terms of the selection of appropriate ionic liquids for specific applications.

Mechanistic Study of 1,3-Butadiene Formation in Acetylene Hydrogenation over the Pd-Based Catalysts Using Density Functional Calculations

Green oil, which leads to the deactivation of the catalysts used for the selective hydrogenation of acetylene, has long been observed but its formation mechanism is not fully understood. In this work, the formation of 1,3-butadiene, known to be the precursor of green oil, on both Pd(111) and Pd(211) surfaces is examined using density functional theory calculations. The pathways containing C-2 + C-2 coupling reactions as well as the corresponding hydrogenation reactions are studied in detail. Three pathways for 1,3-butadiene production, namely coupling plus hydrogenation and further hydrogenation, hydrogenation plus coupling plus hydrogenation, and a two step hydrogenation followed by coupling, are determined. By comparing the effective barriers, we identify the favored pathway on both surfaces. A general understanding toward the deactivation process of the industrial catalysts is also provided. In addition, the effects of the formation of subsurface carbon atoms as well as the Ag alloying on the 1,3-butadiene formation on Pd-based catalysts are also investigated and compared with experimental results.

Influence of surface structures, subsurface carbon and hydrogen, and surface alloying on the activity and selectivity of acetylene hydrogenation on Pd surfaces: A density functional theory study

The selective hydrogenation of acetylene to ethylene on several Pd surfaces (Pd(111), Pd(100), Pd(211), and Pd(211)-defect) and Pd surfaces with subsurface species (carbon and hydrogen) as well as a number of Pd-based alloys (Pd-M/Pd(111) and Pd-M/Pd(211) (M = Cu, Ag and Au)) are investigated using density functional theory calculations to understand both the acetylene hydrogenation activity and the selectivity of ethylene formation. All the hydrogenation barriers are calculated, and the reaction rates on these surfaces are obtained using a two-step model. Pd(211) is found to have the highest activity for acetylene hydrogenation while Pd(100) gives rise to the lowest activity. In addition, more open surfaces result in over-hydrogenation to form ethane, while the close-packed surface (Pd(111)) is the most selective. However, we also find that the presence of subsurface carbon and hydrogen significantly changes the reactivity and selectivity of acetylene toward hydrogenation on Pd surfaces. On forming surface alloys of Pd with Cu, Ag and Au, the selectivity for ethylene is also found to be changed. A new energy decomposition method is used to quantitatively analyze the factors in determining the changes in selectivity. These surface modifiers are found to block low coordination unselective sites, leading to a decreased ethane production. (C) 2013 The Authors. Published by Elsevier Inc. All rights reserved.

Selective Hydrogenation of Acetylene over Pd-Boron Catalysts: A Density Functional Theory Study

Boron-modified Pd catalysts have shown excellent performance for the selective hydrogenation of alkynes experimentally. In the current work, we investigated the hydrogenation of acetylene on boron-modified Pd(111) and Pd(211) surfaces, utilizing density functional theory calculations. The activity of acetylene hydrogenation has been studied by estimating the effective barrier of the whole process. The selectivity of ethylene formation is investigated from a comparison between the desorption and the hydrogenation of ethylene as well as comparison between the ethylene and the 1,3-butadiene formation. Formation of subsurface carbon and hydrogen on both boron-modified Pd(111) and Pd(211) surfaces has also been evaluated, since these have been reported to affect both the activity and the selectivity of acetylene hydrogenation to produce ethylene on Pd surfaces. Our results provide some important insights into the Pd B catalysts for selective hydrogenation of acetylene and also for more complex hydrogenation systems, such as stereoselective hydrogenation of longer chain alkynes and selective hydrogenation of vegetable oil.

Corroles : synthesis, functionalization and application as chemosensors

O trabalho de investigação apresentado nesta dissertação foi desenvolvido tendo como objectivo a síntese e funcionalização de meso-triarilcorróis para utilização como quimiossensores. Este trabalho encontra-se apresentado ao longo de cinco capítulos. No primeiro capítulo são apresentadas as características gerais, as metodologias de síntese e de funcionalização de macrociclos de tipo corrólico, e descrevemse algumas aplicações em que têm sido utilizados. São ainda abordadas algumas das propriedades e características dos quimiossensores e os mecanismos de deteção de diversos analítos. No segundo capítulo, após uma pequena introdução às reações de Wittig e de Diels-Alder, escolhidas para a funcionalização do macrociclo corrólico, descreve-se o estudo efectuado para a obtenção do complexo de gálio(III) do 3- vinil-5,10,15-tris(pentafluorofenil)corrol e o seu comportamento como dieno, em reações de Diels-Alder na presença dos dienófilos 1,4-benzoquinona e 1,4- naftoquinona. Desses estudos resultaram dois aductos cuja habilidade sensorial, bem como a dos seus precursores, foi estudada, em solução, na presença de aniões esféricos (F-, Br-, Cl-), lineares (CN-) e volumosos (CH3COO-, H2PO4 -). Dos macrociclos estudados verificou-se que o corrol base-livre 5,10,15-tris(pentafluorofenil)corrol apresenta uma elevada sensibilidade para o anião fluoreto (F-), e que a coordenação do núcleo corrólico com gálio(III) diminui a afinidade para este anião. Em geral, todos os compostos mostraram afinidade para o anião cianeto (CN-) mesmo quando em suportes poliméricos. O gel de poliacrilamida revelou-se muito promissor na determinação de CN- em amostras de água. No terceiro capítulo é avaliada a reatividade do complexo de gálio(III) do 3- vinil-5,10,15-tris(pentafluorofenil)corrol ainda como dieno mas agora na presença de um dienófilo linear, o acetilenodicarboxilato de dimetilo. Desse estudo resultaram dois novos derivados corrólicos. A habilidade sensorial dos mesmos perante os aniões fluoreto, cianeto, acetato, e fosfato foi avaliada por espectroscopia de absorção e emissão tendo um dos aductos mostrado ser colorimétrico para o anião cianeto. No quarto capítulo descreve-se a síntese e caracterização de dois conjugados do tipo corrol-cumarina, resultantes de reações de Hetero-Diels-Alder entre o 3-vinil-5,10,15-tris(pentafluorofenil)corrolatogálio(III)(piridina) e orto-quinonasmetídeos gerados in situ a partir de reacções de Knoevenagel entre cumarinas e paraformaldeído. Realizaram-se estudos de afinidade sensorial para aniões e catiões com estes macrociclos, bem como com conjugados porfirinacumarina análogos. A inserção de uma unidade cumarina conferiu uma excepcional solubilidade tendo os novos derivados apresentado solubilidade em etanol. No quinto e último capítulo desta dissertação é avaliada a capacidade sensorial do 5,10,15-tris(pentafluorofenil)corrol e da sua espécie monoaniónica, para os catiões metálicos Na+, Ca2+, Cu2+, Cd2+, Pb2+, Hg2+, Ag+, Al3+, Zn2+, Ni2+, Cr3+, Ga3+, Fe3+ em tolueno e acetonitrilo. Os macrociclos corrólicos mostraram ser selectivos e colorimétricos para o catião Hg2+. Neste trabalho descreve-se ainda a síntese do derivado -iminocorrol, que após funcionalização com o 3-isocianatopropiltrimetoxisilano originou um derivado do tipo alcoxisilano, que foi, posteriormente, ancorado a nanopartículas comerciais de sílica. As novas nanopartículas ancoradas com o alcoxisilano corrol foram estudadas na presença de Cu2+, Hg2+ e Ag+. Na presença do catião Ag+ assistiu-se a uma mudança de cor, de verde para amarelo.

Engineering new strategies to improve pharmacokinetics of therapeutic proteins

Tese de doutoramento, Farmácia (Biotecnologia Farmacêutica), Universidade de Lisboa, Faculdade de Farmácia, 2014

Positron measurements in Mg-doped GaN and development of digital Doppler broadening spectroscopy

In this work parameters of Mg-doped GaN samples were studied using positron annihilation spectroscopy and analyzed. It is shown that gallium vacancies exist in an unintentionally doped sample. Next, the sample with higher concentration of Mg and low growth temperature contains vacancy clusters. In case of low concentration of Mg the growth temperature does not affect the formation of defects. Analog electronics can be replaced by a modern digital device. While promising a high quantity of benefits, the performance of these digitizers requires thorough adjustment. A 14-bit two channel digitizer has been tested in order to achieve better performance than the one of a traditional analog setup, and the adjustment process is described. It has been shown that the digital device is unable to achieve better energy resolution, but it is quite close to the corresponding attribute of the available analog system, which had been used for measurements in Mg-doped GaN.

Ermittlung der Verlustleistungen in einem Synchron-Tiefsetzsteller mit Niedervolt-GaN-HFETs

Wenn sich in einem wichtigen Bereich der Elektrotechnik ein neues Halbleitermaterial zu etablieren beginnt, weckt dies einerseits Erwartungen der Wirtschaft und Industrie, andererseits kann es eine erhebliche Herausforderung für die Hersteller bedeuten. Nachdem Gallium-Nitrid erstmalig vor 20 Jahren als Transistor verwendet wurde und seit über einer Dekade serienmäßig in der Hochfrequenztechnik eingesetzt wird, erobert es nun die Leistungselektronik. Die ausschlaggebenden Kriterien sind hier die Verwendbarkeit bei höheren Betriebstemperaturen, die Energieeffizienz und die Reduzierung von Größe und Gewicht durch den Betrieb bei höheren Schaltfrequenzen. Die vorliegende Arbeit basiert auf der Motivation zunächst einen möglichst breit angelegten Überblick des ständig wachsenden Angebotsspektrums zu geben, das mittlerweile durch die vielfältigen Varianten der verfügbaren Transistoren an Übersichtlichkeit etwas verloren hat. Nach einer ausführlichen Erläuterung der physikalischen und elektrischen Eigenschaften, werden die jeweiligen Typen in überschaubaren Abschnitten beschrieben und im Anschluss tabellarisch zusammengefasst. Die elektrischen Eigenschaften der hier ausgewählten EPC 2010 eGaN-HFETs (200 V Spannungsklasse) werden eingehend diskutiert. Das Schaltverhalten der eGaN-HFETs in einem Synchron-Tiefsetzsteller wird untersucht und modelliert. Eine Analyse aller in den GaN-FETs entstehenden Verlustleistungen wird durchgeführt. Zur Abschätzung der dynamischen Verlustleistungen wird eine analytische Methode umgesetzt und weiter entwickelt. Um die Vorteile der erhöhten Schaltfrequenzen nutzen zu können, erfolgt eine sehr ausführliche Betrachtung der notwendigen magnetischen Komponenten, deren Auswahl- und Verwendungskriterien im Detail untersucht, evaluiert und aufgegliedert werden. Diese werden im praktischen Teil ausgiebig in Verbindung mit den GaN-Transistoren ausgesucht und messtechnisch bewertet. Theoretische Betrachtungen hinsichtlich der Grenzen, die magnetische Bauelemente schnell schaltenden Halbleitern auferlegen, werden durchgeführt. Da die untersuchten Niedervolt-GaN-HFETs quasi kein Gehäuse haben, ist eine korrekte Strommessung nicht realisierbar. Am praktischen Beispiel eines Synchron-Tiefsetzstellers werden zwei experimentelle Methoden entwickelt, mit deren Hilfe die Verlustleistungen in den EPC 2010 eGaN-HFETs ermittelt werden. Anschließend wird das Verbesserungspotential der GaN-Leistungstransistoren erläutert sowie deren Anwendungsbereiche diskutiert.

Characterization of ZnO Nanorods Grown on GaN Using Aqueous Solution Method

Uniformly distributed ZnO nanorods with diameter 70-100 nm and 1-2μm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and the growth parameters are controlled by reactant concentration, temperature and pH. No catalyst is required. The XRD studies show that the ZnO nanorods are single crystals and that they grow along the c axis of the crystal plane. The room temperature photoluminescence measurements have shown ultraviolet peaks at 388nm with high intensity, which are comparable to those found in high quality ZnO films. The mechanism of the nanorod growth in the aqueous solution is proposed. The dependence of the ZnO nanorods on the growth parameters was also investigated. While changing the growth temperature from 60°C to 150°C, the morphology of the ZnO nanorods changed from sharp tip (needle shape) to flat tip (rod shape). These kinds of structure are useful in laser and field emission application.

High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth

High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by metalorganic chemical vapor deposition (MOCVD) on a nano-patterned SiO2/GaN template. The nanoporous SiO2 on GaN surface was created by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) template as a mask. This selective regrowth results in highly crystalline GaN nanodots confirmed by high resolution transmission electron microscopy. The narrow size distribution and uniform spatial position of the nanoscale dots offer potential advantages over self-assembled dots grown by the Stranski–Krastanow mode.

Growth of ZnO Nanorods on GaN Using Aqueous Solution Method

Uniformly distributed ZnO nanorods with diameter 80-120 nm and 1-2µm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and the growth parameters are controlled by reactant concentration, temperature and pH. No catalyst is required. The XRD studies show that the ZnO nanorods are single crystals and that they grow along the c axis of the crystal plane. The room temperature photoluminescence measurements have shown ultraviolet peaks at 388nm with high intensity, which are comparable to those found in high quality ZnO films. The mechanism of the nanorod growth in the aqueous solution is proposed. The dependence of the ZnO nanorods on the growth parameters was also investigated. While changing the growth temperature from 60°C to 150°C, the morphology of the ZnO nanorods changed from sharp tip with high aspect ratio to flat tip with smaller aspect ratio. These kinds of structure are useful in laser and field emission application.

High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD

The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. However, high In content in InGaN layers will result in a significant degradation of the crystalline quality of the epitaxial layers. In addition, unlike other III-V compound semiconductors, the ratio of gallium to indium incorporated in InGaN is in general not a simple function of the metal atomic flux ratio, f[subscript Ga]/f[subscript In]. Instead, In incorporation is complicated by the tendency of gallium to incorporate preferentially and excess In to form metallic droplets on the growth surface. This phenomenon can definitely affect the In distribution in the InGaN system. Scanning electron microscopy, room temperature photoluminescence, and X-ray diffraction techniques have been used to characterize InGaN layer grown on InN and InGaN buffers. The growth was done on c-plane sapphire by MOCVD. Results showed that green emission was obtained which indicates a relatively high In incorporation.

High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching

Nanoporous GaN films are prepared by UV assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, micro-photoluminescence (PL), micro-Raman scattering, scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques have been employed. SEM and AFM measurements revealed an average pore size of about 85-90 nm with a transverse dimension of 70-75 nm. As compared to the as-grown GaN film, the porous layer exhibits a substantial photoluminescence intensity enhancement with a partial relaxation of compressive stress. Such a stress relaxation is further confirmed by the red shifted E₂(TO) phonon peak in the Raman spectrum of porous GaN.

Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy

We present the results of GaInNAs/GaAs quantum dot structures with GaAsN barrier layers grown by solid source molecular beam epitaxy. Extension of the emission wavelength of GaInNAs quantum dots by ~170nm was observed in samples with GaAsN barriers in place of GaAs. However, optimization of the GaAsN barrier layer thickness is necessary to avoid degradation in luminescence intensity and structural property of the GaInNAs dots. Lasers with GaInNAs quantum dots as active layer were fabricated and room-temperature continuous-wave lasing was observed for the first time. Lasing occurs via the ground state at ~1.2μm, with threshold current density of 2.1kA/cm[superscript 2] and maximum output power of 16mW. These results are significantly better than previously reported values for this quantum-dot system.