929 resultados para DC-DC power converters


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In the present paper, a novel topology for generating a 17-level inverter using three-level flying capacitor inverter and cascaded H-bridge modules with floating capacitors. The proposed circuit is analyzed and various aspects of it are presented in the paper. This circuit is experimentally verified and the results are shown. The stability of the capacitor balancing algorithm has been verified during sudden acceleration. This circuit has many pole voltage redundancies. This circuit has an advantage of balancing all the capacitor voltages instantaneously by switching through the redundancies. Another advantage of this topology is its ability to generate all the 17 pole voltages from a single DC link which enables back to back converter operation. Also, the proposed inverter can be operated at all load power factors and modulation indices. Another advantage is, if one of the H-bridges fail, the inverter can still be operated at full load with reduced number of levels.

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The ac-side terminal voltages of parallel-connected converters are different if the line reactive drops of the individual converters are different. This could result either from differences in per-phase inductances or from differences in the line currents of the converters. In such cases, the modulating signals are different for the converters. Hence, the common-mode (CM) voltages for the converters, injected by conventional space vector pulsewidth modulation (CSVPWM) to increase dc-bus utilization, are different. Consequently, significant low-frequency zero-sequence circulating currents result. This paper proposes a new modulation method for parallel-connected converters with unequal terminal voltages. This method does not cause low-frequency zero-sequence circulating currents and is comparable with CSVPWM in terms of dc-bus utilization and device power loss. Experimental results are presented at a power level of 150 kVA from a circulating-power test setup, where the differences in converter terminal voltages are quite significant.

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This study presents a topology for a single-phase pulse-width modulation (PWM) converter which achieves low-frequency ripple reduction in the dc bus even when there are grid frequency variations. A hybrid filter is introduced to absorb the low-frequency current ripple in the dc bus. The control strategy for the proposed filter does not require the measurement of the dc bus ripple current. The design criteria for selecting the filter components are also presented in this study. The effectiveness of the proposed circuit has been tested and validated experimentally. A smaller dc-link capacitor is sufficient to keep the low-frequency bus ripple to an acceptable range in the proposed topology.

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This paper presents the experimental results for an attractive control scheme implementation using an 8 bit microcontroller. The power converter involved is a 3 phase full controlled bridge rectifier. A single quadrant DC drive has been realized and results have been presented for both open and closed loop implementations.

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Single-phase DC/AC power electronic converters suffer from pulsating power at double the line frequency. The commonest practice to handle the issue is to provide a huge electrolytic capacitor for smoothening out the ripple. But, the electrolytic capacitors having short end of lifetimes limit the overall lifetime of the converter. Another way of handling the ripple power is by active power decoupling (APD) using the storage devices and a set of semiconductor switches. Here, a novel topology has been proposed implementing APD. The topology claims the benefit of 1) reduced stress on converter switches 2) using smaller capacitance value thus alleviating use of electrolytic capacitor in turn improving the lifetime of the converter. The circuit consists of a third leg, a storage capacitor and a storage inductor. The analysis and the simulation results are shown to prove the effectiveness of the topology.

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The voltage ripple and power loss in the DC-capacitor of a voltage source inverter depend on the harmonic currents flowing through the capacitor. This paper presents a double Fourier series based analysis of the harmonic contents of the DC capacitor current in a three-level neutral-point clamped (NPC) inverter, modulated with sine-triangle pulse-width modulation (SPWM) or conventional space vector pulse-width modulation (CSVPWM) schemes. The analytical results are validated experimentally on a 3-kVA three-level inverter prototype. The capacitor current in an NPC inverter has a periodicity of 120(a similar to) at the fundamental or modulation frequency. Hence, this current contains third-harmonic and triplen-frequency components, apart from switching frequency components. The harmonic components vary with modulation index and power factor for both PWM schemes. The third harmonic current decreases with increase in modulation index and also decreases with increase in power factor in case of both PWM methods. In general, the third harmonic content is higher with SPWM than with CSVPWM at a given operating condition. Also, power loss and voltage ripple in the DC capacitor are estimated for both the schemes using the current harmonic spectrum and equivalent series resistance (ESR) of the capacitor.

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Single-phase DC/AC power electronic converters suffer from pulsating power at double the line frequency. The commonest practice to handle the issue is to provide a huge electrolytic capacitor for smoothening out the ripple. But, the electrolytic capacitors having short end of lifetimes limit the overall lifetime of the converter. Another way of handling the ripple power is by active power decoupling (APD) using the storage devices and a set of semiconductor switches. Here, a novel topology has been proposed implementing APD. The topology claims the benefit of 1) reduced stress on converter switches 2) using smaller capacitance value thus alleviating use of electrolytic capacitor in turn improving the lifetime of the converter. The circuit consists of a third leg, a storage capacitor and a storage inductor. The analysis and the simulation results are shown to prove the effectiveness of the topology.

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We discuss the potential application of high dc voltage sensing using thin-film transistors (TFTs) on flexible substrates. High voltage sensing has potential applications for power transmission instrumentation. For this, we consider a gate metal-substrate-semiconductor architecture for TFTs. In this architecture, the flexible substrate not only provides mechanical support but also plays the role of the gate dielectric of the TFT. Hence, the thickness of the substrate needs to be optimized for maximizing transconductance, minimizing mechanical stress, and minimizing gate leakage currents. We discuss this optimization, and develop n-type and p-type organic TFTs using polyvinyldene fluoride as the substrate-gate insulator. Circuits are also realized to achieve level shifting, amplification, and high drain voltage operation.

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In this study, analysis of extending the linear modulation range of a zero common-mode voltage (CMV) operated n-level inverter by allowing reduced CMV switching is presented. A new hybrid seven-level inverter topology with a single DC supply is also presented in this study and inverter operation for zero and reduced CMV is analysed. Each phase of the inverter is realised by cascading two three-level flying capacitor inverters with a half-bridge module in between. Proposed inverter topology is operated with zero CMV for modulation index <86% and is operated with a CMV magnitude of V-dc/18 to extend the modulation range up to 96%. Experimental results are presented for zero CMV operation and for reduced common voltage operation to extend the linear modulation range. A capacitor voltage balancing algorithm is designed utilising the pole voltage redundancies of the inverter, which works for every sampling instant to correct the capacitor voltage irrespective of load power factor and modulation index. The capacitor voltage balancing algorithm is tested for different modulation indices and for various transient conditions, to validate the proposed topology.

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Arc voltage fluctuations in a direct current (DC) non-transferred arc plasma generator are experimentally studied, in generating a jet in the laminar, transitional and turbulent regimes. The study is with a view toward elucidating the mechanism of the fluctuations and their relationship with the generating parameters, arc root movement and flow regimes. Results indicate that the existence of a 300 Hz alternating current (AC) component in the power supply ripples does not cause the transition of the laminar plasma jet into a turbulent state. There exists a high frequency fluctuation at 4 kHz in the turbulent jet regime. It may be related to the rapid movement of the anode attachment point of the arc.

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A torch with a set of inter-electrode inserts between the cathode and the anode/nozzle with a wide nozzle exit was designed to generate plasma jets at chamber pressures of 500–10 000 Pa. The variation of the arc voltage was examined with the change in working parameters such as gas flow rate and chamber pressure. The fluctuation in the arc voltage was recorded with an oscilloscope, and the plasma jet fluctuation near the torch exit was observed with a high-speed video camera and detected with a double-electrostatic probe. Results show that the 300 Hz wave originated from the tri-phase rectified power supply was always detected under all generating conditions. Helmholtz oscillations over 3000 Hz was detected superposed on the 300 Hz wave at gas flow rates higher than 8.8 slm with a peak to valley amplitude lower than 5% of the average voltage value. No appreciable voltage fluctuation caused by the irregular arc root movement is detected, and mechanisms for the arc voltage and jet flow fluctuations are discussed.

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Si:SbOx films have been deposited by reactive dc-magnetron sputtering from a Sb target with Si chips attached in Ar + O-2 with the relative O-2 content 7%. The as-deposited films contained Sb metal, Sb2O3, SiO, Si2O3 and SiO2. The crystallization of Sb was responsible for the changes of optical properties of the films. The results of the blue laser recording test showed that the films had good writing sensitivity for blue laser beam (406.7 nm), and the recording marks were still clear even if the films were deposited in air 60 days, which demonstrated that doping silicon in SbOx films can improve the stability of SbOx films. High reflectivity contrast of about 36% was obtained at a writing power 6 mW and writing pulse width 300 ns. (c) 2007 Elsevier B.V. All rights reserved.

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A fully integrated 0.18 μm DC-DC buck converter using a low-swing "stacked driver" configuration is reported in this paper. A high switching frequency of 660 MHz reduces filter components to fit on chip, but this suffers from high switching losses. These losses are reduced using: 1) low-swing drivers; 2) supply stacking; and 3) introducing a charge transfer path to deliver excess charge from the positive metal-oxide semiconductor drive chain to the load, thereby recycling the charge. The working prototype circuit converts 2.2 to 0.75-1.0 V at 40-55 mA. Design and simulation of an improved circuit is also included that further improves the efficiency by enhancing the charge recycling path, providing automated zero voltage switching (ZVS) operation, and synchronizing the half-swing gating signals. © 2009 IEEE.

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Large digital chips use a significant amount of energy to broadcast a low-skew, multigigahertz clock to millions of latches located throughout the chip. Every clock cycle, the large aggregate capacitance of the clock network is charged from the supply and then discharged to ground. Instead of wasting this stored energy, it is possible to recycle the energy by controlling its delivery to another part of the chip using an on-chip dc-dc converter. The clock driver and switching converter circuits share many compatible characteristics that allow them to be merged into a single design and fully integrated on-chip. Our buck converter prototype, manufactured in 90-nm CMOS, provides a proof-of-concept that clock network energy can be recycled to other parts of the chip, thus lowering overall energy consumption. It also confirms that monolithic multigigahertz switching converters utilizing zero-voltage switching can be implemented in deep-submicrometer CMOS. With multigigahertz operation, fully integrated inductors and capacitors use a small amount of chip area with low losses. Combining the clock driver with the power converter can share the large MOSFET drivers necessary as well as being energy and space efficient. We present an analysis of the losses which we confirm by experimentally comparing the merged circuit with a conventional clock driver. © 2012 IEEE.