Hypersonic elastic excitations in soft mesoscopic structures

This dissertation is devoted to the experimental exploration of the propagation of elastic waves in soft mesoscopic structures with submicrometer dimensions. A strong motivation of this work is the large technological relevance and the fundamental importance of the subject. Elastic waves are accompanied by time-dependent fluctuations of local stress and strain fields in the medium. As such, the propagation phase velocities are intimately related to the elastic moduli. Knowledge of the elastic wave propagation directly provides information about the mechanical properties of the probed mesoscopic structures, which are not readily accessible experimentally. On the other hand, elastic waves, when propagating in an inhomogeneous medium with spatial inhomogeneities comparable to their wavelength, exhibit rather rich behavior, including the appearance of novel physical phenomena, such as phononic bandgap formation. So far, the experimental work has been restricted to macroscopic structures, which limit wave propagation below the KHz range. It was anticipated that an experimental approach capable of probing the interplay of the wave propagation with the controlled mesoscopic structures would contribute to deeper insights into the fundamental problem of elastic wave propagation in inhomogeneous systems. The mesoscopic nature of the structures to be studied precludes the use of traditional methods, such as sound transmission, for the study of elastic wave propagation. In this work, an optical method utilizing the inelastic scattering of photons by GHz frequency thermally excited elastic waves, known as Brillouin light scattering spectroscopy (BLS), was employed. Two important classes of soft structures were investigated: thin films and colloidal crystals. For the former, the main interest was the effect of the one-dimensional (1D) confinement on the wave propagation due to the presence of the free-surface or interface of the layer and the utilization of these waves to extract relevant material parameters. For the second system, the primary interest was the interaction of the elastic wave and the strong scattering medium with local resonance units in a three-dimensional (3D) periodic arrangement.

Analisi in spettroscopia ottica di cristalli molecolari organici

Nel settore dell'elettronica organica, i monocristalli organici sono particolarmente indicati, grazie al loro alto grado di purezza chimica, per lo studio delle qualità intrinseche di tutta la categoria dei cristalli organici. L'interesse applicativo si concretizza in dispositivi come LED, pannelli solari, sensori, display e componenti elettronici leggeri, flessibili e trasparenti. A tutto questo si aggiungono la biocompatibilità, il basso costo ed il basso impatto ambientale. L'obiettivo del seguente lavoro di tesi è la caratterizzazione di alcuni monocristalli in base alle loro proprietà ottiche ed optoelettroniche, analizzandoli mediante tecniche microscopiche in luce polarizzata e campo scuro e tecniche spettroscopiche di assorbimento e del voltaggio superficiale. Si è concentrata l'attenzione sul monocristallo di 4-idrossicianobenzene (4HCB), per la possibilità di confronto con risultati di precedenti analisi di spettroscopia in fotocorrente e per l'interesse verso applicazioni sensoristiche. Come risultato, per la prima volta, si è riuscito a ottenere uno spettro di assorbimento da un monocristallo di 4HCB dal quale si può stimare direttamente l'energia del bandgap del cristallo. Il valore ottenuto è minore di quello relativo all'analisi in fotocorrente, ma potrebbe corrispondere ad un bandgap di tipo ottico considerando che la presenza di stati localizzati dovuta al disordine molecolare provoca una diminuzione della distanza tra le bande. La misura è preliminare è va confermata, ma apre la strada ad ulteriori analisi spettroscopiche in condizioni sperimentali più favorevoli e/o ad analisi di altro tipo.

Proprieta elettriche e ottiche di film di ge impiantati con sn.

In questo lavoro di tesi vengono studiate le proprietà ottiche ed elettriche di film sottili di germanio, impiantati con ioni stagno. I campioni, realizzati tramite tecnica CVD (\emph{Chemical Vapor Deposition}), sono stati realizzati in condizioni operative differenti, il che ha permesso di ottenere materiali con proprietà strutturali e fisiche diverse. Si è posta particolare attenzione alla presenza di strutture nanoporose, presenti in alcuni di questi campioni, che possono dar vita ad effetti di confinamento quantico, associato ad uno spostamento dell'energy gap rispetto al materiale bulk. Le analisi sono state effettuate sia tramite misure SPV (\emph{Surface Photovoltage}), che hanno permesso di indagare le proprietà ottiche, sia tramite tecnica IV (\emph{corrente-tensione}), volta ad evidenziare le proprietà elettriche dei diversi campioni. I risultati ottenuti sono, infine, stati confrontati con un campione di riferimento di film di germanio non impiantato, mettendone in luce le differenze strutturali e fisiche. Lo studio di questo materiale, oltre ad avere un'importanza di carattere fondamentale, è di interesse anche per le possibili ricadute applicative. Infatti, i materiali nanoporosi possono essere impiegati in vari campi, come ad esempio nell'elettronica, nello sviluppo di pannelli fotovoltaici e nella purificazione di gas e liquidi.

Kontrolle der Grenzflächeneigenschaften anorganischer Nanopartikel mittels amphiphiler Polymere

Im Rahmen dieser Arbeit wurden amphiphile Co- und Terpolymere verwendet, um die Grenzflächeneigenschaften anorganischer Nanopartikel zu kontrollieren. Es wurde eine effiziente und vielseitige Methode entwickelt, mit der in-situ hydrophobierte, formanisotrope ZnO-, CdS- und Au-Nanopartikel sowie poröse TiO2-Nanopartikel hergestellt werden konnten. Diese Technik basierte auf der Fällung anorganischer Nanopartikel in einer inversen Emulsion mittels kombinierten Einsatzes zweier maßgeschneiderter amphiphiler Polymere. Ein Copolymer ermöglichte sowohl die Stabilisierung der Emulsion als auch die Hydrophobierung der Partikel, und ein weiteres Struktur-dirigierendes Agens (SDA) kontrollierte den Kristallisationsprozess. Infolge ihrer Form zeigten die Nanopartikel von sphärischen Teilchen abweichende Lagen der Oberflächenplasmonenresonanz und der Bandlücke. Aufgrund der hervorragenden Hydrophobierung dieser Kolloide mittels amphiphiler Copolymere konnten diese homogen in polymere Materialien eingearbeitet werden. Dies erlaubte es die speziellen Eigenschaften von nicht-sphärischen Kolloiden auf Nanokompositmaterialien zu übertragen. Darüber hinaus wurden amphipolare Copolymere genutzt, um superhydrophobe Oberflächen zu generieren. Hierzu wurden Filme bestehend aus rauen SiO2-Nanopartikeln mit fluorierten Emulgatoren beschichtet. In einem dritten Schwerpunkt dieser Arbeit wurden amphiphile Co- und Terpolymere verwendet, um anorganische Nanopartikel zu hydrophilieren. Durch Variation der Emulgatorzusammensetzung konnten die Ladung und Ladungsdichte auf der Partikeloberfläche gezielt gesteuert werden. Darüber hinaus konnte die Partikelhülle zusätzlich mit Farbstoffmolekülen funktionalisiert werden, was den erfolgreichen Einsatz der Kolloide in Zellaufnahmeexperimenten ermöglichte.

Bottom-up solution synthesis of structurally defined graphene nanoribbons

Graphene nanoribbons (GNRs), which are defined as nanometer-wide strips of graphene, are attracting an increasing attention as one on the most promising materials for future nanoelectronics. Unlike zero-bandgap graphene that cannot be switched off in transistors, GNRs possess open bandgaps that critically depend on their width and edge structures. GNRs were predominantly prepared through “top-down” methods such as “cutting” of graphene and “unzipping” of carbon nanotubes, but these methods cannot precisely control the structure of the resulting GNRs. In contrast, “bottom-up” chemical synthetic approach enables fabrication of structurally defined and uniform GNRs from tailor-made polyphenylene precursors. Nevertheless, width and length of the GNRs obtainable by this method were considerably limited. In this study, lateral as well as longitudinal extensions of the GNRs were achieved while preserving the high structural definition, based on the bottom-up solution synthesis. Initially, wider (~2 nm) GNRs were synthesized by using laterally expanded monomers through AA-type Yamamoto polymerization, which proved more efficient than the conventional A2B2-type Suzuki polymerization. The wider GNRs showed broad absorption profile extending to the near-infrared region with a low optical bandgap of 1.12 eV, which indicated a potential of such GNRs for the application in photovoltaic cells. Next, high longitudinal extension of narrow (~1 nm) GNRs over 600 nm was accomplished based on AB-type Diels–Alder polymerization, which provided corresponding polyphenylene precursors with the weight-average molecular weight of larger than 600,000 g/mol. Bulky alkyl chains densely installed on the peripheral positions of these GNRs enhanced their liquid-phase processability, which allowed their formation of highly ordered self-assembled monolayers. Furthermore, non-contact time-resolved terahertz spectroscopy measurements demonstrated high charge-carrier mobility within individual GNRs. Remarkably, lateral extension of the AB-type monomer enabled the fabrication of wider (~2 nm) and long (>100 nm) GNRs through the Diels–Alder polymerization. Such longitudinally extended and structurally well-defined GNRs are expected to allow the fabrication of single-ribbon transistors for the fundamental studies on the electronic properties of the GNRs as well as contribute to the development of future electronic devices.

Proprietà optoelettroniche di film nanoporosi ottenuti per impiantazione ionica.

In questo elaborato vengono studiate le proprietà optoelettroniche di film sottili di germanio nanoporosi ottenuti per impiantazione ionica. Viene trattata la tecnica sperimentale della Surface Photovoltage Spectroscopy nella configurazione Metal-Insulator-Semiconductor. Viene osservato che la presenza di struttura nanoporosa provoca due effetti: il primo è l’innalzamento del bandgap energetico dovuta al confinamento quantistico degli elettroni all’interno dei pori; il secondo è l’incremento del segnale SPV per quei film in cui è maggiore il rapporto tra superficie e volume.

Spettroscopia di livelli profondi su nanofili di silicio cresciuti con metodo MaCE

Oggetto di studio di questa tesi è la spettroscopia di livelli profondi (DLTS) in due set di nanofili di silicio cresciuti con metodo MaCE presso l’Università di Jena (Germania)nel team di ricerca del Prof. Vladimir Sivakov, utilizzando oro come catalizzatore. Il primo set di nanofili non ha subito ulteriori procedure dopo la crescita, mentre il secondo set è stato sottoposto ad annealing (stress termico) per 60 minuti alla temperatura di 700C. Scopo delle misure DLTS è quello di rivelare i livelli elettronici intragap e determinare l’influenza del processo di annealing su tali livelli. Dai risultati sperimentali si è osservata la presenza di due trappole per elettroni in entrambi i campioni: nel campione non soggetto ad annealing sono stati trovati i seguenti stati intragap: A, con energia di attivazione EA = EC - 0,20eV e sezione di cattura SA = 7E-18cm2; B, con energia di attivazione EB = EC - 0,46eV e sezione di cattura SB = 8E-18cm2; nel campione soggetto ad annealing sono stati trovati i seguenti stati intragap: C, con energia di attivazione EC = EC - 0,17eV e sezione di cattura SC = 3E-17cm2; D, con energia di attivazione ED = EC - 0,30eV e sezione di cattura SD = 3E-19cm2. Risulta quindi evidente che il processo di annealing determina una modifica della configurazione dei livelli intragap. In particolare la trappola B, posizionata nelle vicinanze della metà del bandgap, scompare in seguito allo stress termico. Dalle ricerche fatte in letteratura, potrebbe trattarsi di un livello energetico generato dalla presenza di idrogeno, incorporato nei nanofili durante la crescita. Questi risultati si propongono come una base di partenza per studi futuri riguardanti l’identificazione certa dei difetti responsabili di ciascun livello intragap rivelato, mediante ricerche approfondite in letteratura (riguardo i livelli intragap del silicio bulk) e simulazioni.

A photophysical study of excited state dynamics in donor-acceptor copolymer photovoltaic blends

This thesis deals with the investigation of charge generation and recombination processes in three different polymer:fullerene photovoltaic blends by means of ultrafast time-resolved optical spectroscopy. The first donor polymer, namely poly[N-11"-henicosanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] (PCDTBT), is a mid-bandgap polymer, the other two materials are the low-bandgap donor polymers poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b']-dithiophene)-alt-4,7-(2,1,3-benzothiadiazole) (PCPDTBT) and poly[(4,4'-bis(2-ethylhexyl)dithieno[3,2-b:2',3'-d]silole)-2,6-diyl-alt-(2,1,3-benzothiadiazole)-4,7-diyl] (PSBTBT). Despite their broader absorption, the low-bandgap polymers do not show enhanced photovoltaic efficiencies compared to the mid-bandgap system.rnrnTransient absorption spectroscopy revealed that energetic disorder plays an important role in the photophysics of PCDTBT, and that in a blend with PCBM geminate losses are small. The photophysics of the low-bandgap system PCPDTBT were strongly altered by adding a high boiling point cosolvent to the polymer:fullerene blend due to a partial demixing of the materials. We observed an increase in device performance together with a reduction of geminate recombination upon addition of the cosolvent. By applying model-free multi-variate curve resolution to the spectroscopic data, we found that fast non-geminate recombination due to polymer triplet state formation is a limiting loss channel in the low-bandgap material system PCPDTBT, whereas in PSBTBT triplet formation has a smaller impact on device performance, and thus higher efficiencies are obtained.rn

Excited-state dynamics in donor-acceptor systems for energy conversion

In dieser Arbeit werden die Dynamiken angeregter Zustände in Donor-Akzeptorsystemen für Energieumwandlungsprozesse mit ultraschneller zeitaufgelöster optischer Spektroskopie behandelt. Der Hauptteil dieser Arbeit legt den Fokus auf die Erforschung der Photophysik organischer Solarzellen, deren aktive Schichten aus diketopyrrolopyrrole (DPP) basierten Polymeren mit kleiner Bandlücke als Elektronendonatoren und Fullerenen als Elektronenakzeptoren bestehen. rnEin zweiter Teil widmet sich der Erforschung von künstlichen primären Photosynthesereaktionszentren, basierend auf Porphyrinen, Quinonen und Ferrocenen, die jeweils als Lichtsammeleinheit, Elektronenakzeptor beziehungsweise als Elektronendonatoren eingesetzt werden, um langlebige ladungsgetrennte Zustände zu erzeugen.rnrnZeitaufgelöste Photolumineszenzspektroskopie und transiente Absorptionsspektroskopie haben gezeigt, dass Singulettexzitonenlebenszeiten in den Polymeren PTDPP-TT und PFDPP-TT Polymeren kurz sind (< 20 ps) und dass in Mischungen der Polymere mit PC71BM geminale Rekombination von gebundenen Ladungstransferzuständen ein Hauptverlustkanal ist. Zudem wurde in beiden Systemen schnelle nichtgeminale Rekombination freier Ladungen zu Triplettzuständen auf dem Polymer beobachtet. Für das Donor-Akzeptor System PDPP5T:PC71BM wurde nachgewiesen, dass die Zugabe eines Lösungsmittels mit hohem Siedepunkt, und zwar ortho-Dichlorbenzol, die Morphologie der aktiven Schicht stark beeinflusst und die Solarzelleneffizienz verbessert. Der Grund hierfür ist, dass die Donator- und Akzeptormaterialien besser durchmischt sind und sich Perkolationswege zu den Elektroden ausgebildet haben, was zu einer verbesserten Ladungsträgergeneration und Extraktion führt. Schnelle Bildung des Triplettzustands wurde in beiden PDPP5T:PC71BM Systemen beobachtet, da der Triplettzustand des Polymers über Laungstransferzustände mit Triplettcharakter populiert werden kann. "Multivariate curve resolution" (MCR) Analyse hat eine starke Intensitätsabhängigkeit gezeigt, was auf nichtgeminale Ladungsträgerrekombination in den Triplettzustand hinweist.rnrnIn den künstlichen primären Photosynthesereaktionszentren hat transiente Absorptionsspektroskopie bestätigt, dass photoinduzierter Ladungstransfer in Quinon-Porphyrin (Q-P) und Porphyrin-Ferrocen (P-Fc) Diaden sowie in Quinon-Porphyrin-Ferrocen (Q-P-Fc) Triaden effizient ist. Es wurde jedoch auch gezeigt, dass in den P-Fc unf Q-P-Fc Systemen die ladungsgetrennten Zustände in den Triplettzustand der jeweiligen Porphyrine rekombinieren. Der ladungsgetrennte Zustand konnte in der Q-P Diade durch Zugabe einer Lewissäure signifikant stabilisiert werden.

In-situ electrical, mechanical and electrochemical characterizations of one-dimensional nanostructures

One-dimensional nanostructures initiated new aspects to the materials applications due to their superior properties compared to the bulk materials. Properties of nanostructures have been characterized by many techniques and used for various device applications. However, simultaneous correlation between the physical and structural properties of these nanomaterials has not been widely investigated. Therefore, it is necessary to perform in-situ study on the physical and structural properties of nanomaterials to understand their relation. In this work, we will use a unique instrument to perform real time atomic force microscopy (AFM) and scanning tunneling microscopy (STM) of nanomaterials inside a transmission electron microscopy (TEM) system. This AFM/STM-TEM system is used to investigate the mechanical, electrical, and electrochemical properties of boron nitride nanotubes (BNNTs) and Silicon nanorods (SiNRs). BNNTs are one of the subjects of this PhD research due to their comparable, and in some cases superior, properties compared to carbon nanotubes. Therefore, to further develop their applications, it is required to investigate these characteristics in atomic level. In this research, the mechanical properties of multi-walled BNNTs were first studied. Several tests were designed to study and characterize their real-time deformation behavior to the applied force. Observations revealed that BNNTs possess highly flexible structures under applied force. Detailed studies were then conducted to understand the bending mechanism of the BNNTs. Formations of reversible ripples were observed and described in terms of thermodynamic energy of the system. Fracture failure of BNNTs were initiated at the outermost walls and characterized to be brittle. Second, the electrical properties of individual BNNTs were studied. Results showed that the bandgap and electronic properties of BNNTs can be engineered by means of applied strain. It was found that the conductivity, electron concentration and carrier mobility of BNNTs can be tuned as a function of applied stress. Although, BNNTs are considered to be candidate for field emission applications, observations revealed that their properties degrade upon cycles of emissions. Results showed that due to the high emission current density, the temperature of the sample was increased and reached to the decomposition temperature at which the B-N bonds start to break. In addition to BNNTs, we have also performed in-situ study on the electrochemical properties of silicon nanorods (SiNRs). Specifically, lithiation and delithiation of SiNRs were studied by our STM-TEM system. Our observations showed the direct formation of Li22Si5 phases as a result of lithium intercalation. Radial expansion of the anode materials were observed and characterized in terms of size-scale. Later, the formation and growth of the lithium fibers on the surface of the anode materials were observed and studied. Results revealed the formation of lithium islands inside the ionic liquid electrolyte which then grew as Li dendrite toward the cathode material.

Charge and spin transport in nanoscale junction from first principles

Recently nanoscale junctions consisting of 0-D nanostructures (single molecule) or 1-D nanostructures (semiconducting nanowire) sandwiched between two metal electrodes are successfully fabricated and characterized. What lacks in the recent developments is the understanding of the mechanism behind the observed phenomena at the level of atoms and electrons. For example, the origin of observed switching effect in a semiconducting nanowire due to the influence of an external gate bias is not yet understood at the electronic structure level. On the same context, different experimental groups have reported different signs in tunneling magneto-resistance for the same organic spin valve structure, which has baffled researchers working in this field. In this thesis, we present the answers to some of these subtle questions by investigating the charge and spin transport in different nanoscale junctions. A parameter-free, single particle Green’s function approach in conjunction with a posteriori density functional theory (DFT) involving a hybrid orbital dependent functional is used to calculate the tunneling current in the coherent transport limit. The effect of spin polarization is explicitly incorporated to investigate spin transport in a nanoscale junction. Through the electron transport studies in PbS nanowire junction, a new orbital controlled mechanism behind the switching of the current is proposed. It can explain the switching behavior, not only in PbS nanowire, but in other lead-chalcogenide nanowires as well. Beside this, the electronic structure properties of this nanowire are studied using periodic DFT. The quantum confinement effect was investigated by calculating the bandgap of PbS nanowires with different diameters. Subsequently, we explain an observed semiconducting to metallic phase transition of this nanowire by calculating the bandgap of the nanowire under uniform radial strain. The compressive radial strain on the nanowire was found to be responsible for the metallic to semiconducting phase transition. Apart from studying one dimensional nanostructure, we also present transport properties in zero dimensional single molecular junctions. We proposed a new codoping approach in a single molecular carborane junction, where a cation and an anion are simultaneously doped to find the role of a single atom in the device. The main purpose was to build a molecular junction where a single atom can dictate the flow of electrons in a circuit. Recent observations of both positive and negative sign in tunneling magnetoresistance (TMR) the using same organic spin-valve structure hasmystified researchers. From our spin dependent transport studies in a prototypical organic molecular tunneling device, we found that a 3% change in metal-molecule interfacial distance can alter the sign of TMR. Changing the interfacial distance by 3%, the number of participating eigenstates as well as their orbital characteristic changes for anti-parallel configuration of the magnetization at the two electrodes, leading to the sign reversal of the TMR. Apart from this, the magnetic proximity effect under applied bias is investigated quantitatively, which can be used to understand the observed unexpectedmagnetismin carbon basedmaterials when they are in close proximity with magnetic substrates.

Boron nitride nanotubes : synthesis, characterization, functionalization, and potential applications

Boron nitride nanotubes (BNNTs) are structurally similar to carbon nanotubes (CNTs), but exhibit completely different physical and chemical properties. Thus, BNNTs with various interesting properties may be complementary to CNTs and provide an alternative perspective to be useful in different applications. However, synthesis of high quality of BNNTs is still challenging. Hence, the major goals of this research work focus on the fundamental study of synthesis, characterizations, functionalization, and explorations of potential applications. In this work, we have established a new growth vapor trapping (GVT) approach to produce high quality and quantity BNNTs on a Si substrate, by using a conventional tube furnace. This chemical vapor deposition (CVD) approach was conducted at a growth temperature of 1200 °C. As compared to other known approaches, our GVT technique is much simpler in experimental setup and requires relatively lower growth temperatures. The as-grown BNNTs are fully characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS), Energy Filtered Mapping, Raman spectroscopy, Fourier Transform Infra Red spectroscopy (FTIR), UV-Visible (UV-vis) absorption spectroscopy, etc. Following this success, the growth of BNNTs is now as convenient as growing CNTs and ZnO nanowires. Some important parameters have been identified to produce high-quality BNNTs on Si substrates. Furthermore, we have identified a series of effective catalysts for patterned growth of BNNTs at desirable or pre-defined locations. This catalytic CVD technique is achieved based on our finding that MgO, Ni or Fe are the good catalysts for the growth of BNNTs. The success of patterned growth not only explains the role of catalysts in the formation of BNNTs, this technique will also become technologically important for future device fabrication of BNNTs. Following our success in controlled growth of BNNTs on substrates, we have discovered the superhydrophobic behavior of these partially vertically aligned BNNTs. Since BNNTs are chemically inert, resistive to oxidation up to ~1000°C, and transparent to UV-visible light, our discovery suggests that BNNTs could be useful as self-cleaning, insulating and protective coatings under rigorous chemical and thermal conditions. We have also established various approaches to functionalize BNNTs with polymeric molecules and carbon coatings. First, we showed that BNNTs can be functionalized by mPEG-DSPE (Polyethylene glycol-1,2-distearoyl-sn-glycero-3-phosphoethanolamine), a bio-compatible polymer that helps disperse and dissolve BNNTs in water solution. Furthermore, well-dispersed BNNTs in water can be cut from its original length of >10µm to(>20hrs). This success is an essential step to implement BNNTs in biomedical applications. On the other hand, we have also succeeded to functionalize BNNTs with various conjugated polymers. This success enables the dispersion of BNNTs in organic solvents instead of water. Our approaches are useful for applications of BNNTs in high-strength composites. In addition, we have also functionalized BNNTs with carbon decoration. This was performed by introducing methane (CH4) gas into the growth process of BNNT. Graphitic carbon coatings can be deposited on the side wall of BNNTs with thicknesses ranging from 2 to 5 nm. This success can modulate the conductivity of pure BNNTs from insulating to weakly electrically conductive. Finally, efforts were devoted to explore the application of the wide bandgap BNNTs in solar-blind deep UV (DUV) photo-detectors. We found that photoelectric current generated by the DUV light was dominated in the microelectrodes of our devices. The contribution of photocurrent from BNNTs is not significant if there is any. Implication from these preliminary experiments and potential future work are discussed.

Highly Efficient IR to NIR Upconversion in Gd2O2S: Er3+ for Photovoltaic Applications

Upconversion (UC) is a promising option to enhance the efficiency of solar cells by conversion of sub-bandgap infrared photons to higher energy photons that can be utilized by the solar cell. The UC quantum yield is a key parameter for a successful application. Here the UC luminescence properties of Er3+-doped Gd2O2S are investigated by means of luminescence spectroscopy, quantum yield measurements, and excited state dynamics experiments. Excitation into the maximum of the 4I15/2 → 4I13/2 Er3+ absorption band around 1500 nm induces very efficient UC emission from different Er3+ excited states with energies above the silicon bandgap, in particular, the emission originating from the 4I11/2 state around 1000 nm. Concentration dependent studies reveal that the highest UC quantum yield is realized for a 10% Er3+-doping concentration. The UC luminescence is compared to the well-known Er3+-doped β-NaYF4 UC material for which the highest UC quantum yield has been reported for 25% Er3+. The UC internal quantum yields were measured in this work for Gd2O2S: 10%Er3+ and β-NaYF4: 25%Er3+ to be 12 ± 1% and 8.9 ± 0.7%, respectively, under monochromatic excitation around 1500 nm at a power of 700 W/m2. The UC quantum yield reported here for Gd2O2S: 10%Er3+ is the highest value achieved so far under monochromatic excitation into the 4I13/2 Er3+ level. Power dependence and lifetime measurements were performed to understand the mechanisms responsible for the efficient UC luminescence. We show that the main process yielding 4I11/2 UC emission is energy transfer UC.

Characterization of HFO2 Capacitors

Hafnium oxide (HfOn) is a promising dielectric for future microelectronic applications. Hf02 thin films (10-75nm) were deposited on Pt/Si02/Si substrates by pulsed DC magnetron reactive sputtering. Top electrodes of Pt were formed by e-beam evapo- ration through an aperture mask on the samples to create MIM (Metal-Insulator-Metal) capacitors. Various processing conditions (Arloz ratio, DC power and deposition rate) and post-deposition annealing conditions (time and temperature) were investigated. The structure of the Hf02 films was characterized by X-ray diffraction (XRD) and the roughness was measured by a profilometer. The electrical properties were characterized in terms of their relative permittivity (E,(T) and ~,.(f)) and leakage behavior (I-V, I-T and I- time). The electrical measurements were performed over a temperature range from -5 to 200°C. For the samples with best experimental results, the relative permittivity of HfOa was found to be -- 27 after anneal and increased by 0.027%/"C with increasing temperature over the measured temperature range. At 25"C, leakage current density was below lop8 ~ l c m ' at 1 volt. The leakage current increased with temperature above a specific threshold temperature below which the leakage current didn't change much. The leakage current increased with voltage. At voltages below lvolt, it's ohmic; at higher voltages, it follows Schottky model. The breakdown field is - 1 . 8 2 ~ lo6 Vlcm. The optical bandgap was measured with samples deposited on quartz substrates to be 5.4eV after anneal.

Radiative thermal escape in intermediate band solar cells

To achieve high efficiency, the intermediate band (IB) solar cell must generate photocurrent from sub-bandgap photons at a voltage higher than that of a single contributing sub-bandgap photon. To achieve the latter, it is necessary that the IB levels be properly isolated from the valence and conduction bands. We prove that this is not the case for IB cells formed with the confined levels of InAs quantum dots (QDs) in GaAs grown so far due to the strong density of internal thermal photons at the transition energies involved. To counteract this, the QD must be smaller.