The effects of the annealing time on helium implantation in Si

The modifications induced in silicon samples by helium implantation before and after isothermal annealing at 673 K have been investigated. The surface morphology has been detected by atomic force microscopy. A hillock structure is observed on the sample surface before and after annealing for 5-10 min. Surface blister formation is observed with an increasing annealing time. The variation of crystal damage with annealing time has been investigated by Rutherford backscattering/channeling. The intensity of the damage peak first increases with annealing time, reaches maximum at an annealing time of 60 min and then decreases. Helium-induced bubbles and residual defects have been observed by transmission electron microscopy, which shows that dislocations are close to the bubbles. (C) 2010 Elsevier B.V. All rights reserved.

The annealing behavior of Cu nanoparticles in Ar-ion implanted spinel

Magnesium aluminate spinel crystals (MgAl2O4 (1 1 0)) deposited with 30 nm Cu film on surface were implanted with 110 key Ar-ions to a fluence of 1.0 x 10(17) ions/cm(2) at 350 degrees C, and then annealed in vacuum condition at the temperature of 500, 600, 700, 800 and 900 degrees C for 1 h, respectively. Ultraviolet-visible spectrometry (UV-VIS), scanning electron microscopy (SEM), Rutherford backscattering (RBS) and transmission electron microscopy (TEM) were adopted to analyze the specimens. After implantation, the appearance of surface plasmon resonance (SPR) absorbance peak in the UV-VIS spectrum indicated the formation of Cu nanoparticles, and the TEM results for 500 degrees C also confirmed the formation of Cu nanoparticles at near-surface region. In annealing process, The SPR absorbance intensity increased at 500 and 700 degrees C, decreased with a blue shift of the peak position at 600 and 800 degrees C, and the peak disappeared at 900 degrees C. The SPR absorbance intensity evolution with temperature was discussed combined with other measurement results (RBS, SEM and TEM). (C) 2010 Elsevier B.V. All rights reserved.

Structural and optical properties of 6H-SiC helium-implanted at 600 K

Single crystals of 6H-SiC were implanted at 600 K with 100 key He ions to three successively fluences and subsequently annealed at different temperatures ranging from 873 to 1473 K in vacuum. The recovery of lattice damage was investigated by different techniques including Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy and Fourier transform infrared spectroscopy. All three techniques showed that the damage induced by helium ion implantation in the lattice is closely related to the fluence. Rutherford backscattering spectrometry/channeling data on high temperature implantations suggest that for a fluence of 3 x 10(16) He+/cm(2), extended defects are created by thermal annealing to 1473 K. Apart from a well-known intensity decrease of scattering peaks in Raman spectroscopy it was found that the absorbance peak in Fourier transform infrared spectroscopy due to the stretching vibration of Si-C bond shifted to smaller wave numbers with increasing fluence, shifting back to larger wave numbers with increasing annealing temperature. These phenomena are attributed to different lattice damage behavior induced by the hot implantation process, in which simultaneous recovery was prevailing. (C) 2010 Elsevier B.V. All rights reserved.

Inactive and mutagenic effects induced by carbon beams of different LET values in a red yeast strain

To evaluate biological action of microorganism exposed to charged particles during the long distance space exploration. Induction of inactivation and mutation in a red yeast strain Rhodotorula glutinis AY 91015 by carbon beams of different LET values (14.9-120 0 keV mu m(-1)) was investigated It was found that survival curves were exponential, and mutation curves were linear for all LET values The dependence of inactivation cross section on LET approached saturation near 120 0 keV mu m(-1) The imitation cross section saturated when LET was higher than 582 keV mu m(-1) Meanwhile, the highest RBEI for inactivation located at 120 0 key mu m(-1) and the highest RBEm for mutation was at 58.2 key mu m(-1) The experiments imply that the most efficient mutagenic part of the depth dose profile of carbon ion is at the plateau region with intermediate LET value in which energy deposited is high enough to Induce mutagenic lesions but too low to induce over kill effect in the yeast cells (C) 2010 Elsevier B V All rights reserved

Enhanced photoluminescence of Ar+ implanted sapphire before and after annealing

In this paper, we studied the changes in the photoluminescence spectra of the Ar+ ion implanted monocrystalline sapphire annealed at different atmospheres and different temperatures. Single crystals of sapphire (Al2O3) with the (1 0 (1) over bar 0) (m-samples) orientation were implanted at 623 K with 110 keV Ar+ ions to a fluence of 9.5 x 10(16) ions/cm(2). Photoluminescence measurement of the as-implanted sample shows a new emission band at 506 nm, which is attributed to the production of interstitial Al atoms. The intensity of emission band at 506 nm first increased then decreased with increase in annealing temperature. For the same annealing temperature, the intensity of PL peak at 506 nm of the sample annealed in air was higher than the sample annealed in vacuum. The experimental results show that the intensity of the PL peak at 506 nm of Ar-implanted sapphire can be enhanced by subsequent annealing with an enhancement of nearly 20 times. The influence of thermal annealing of the Ar-implanted samples on the new 506 nm emission band was discussed. (C) 2009 Elsevier B.V. All rights reserved.

Enhanced nucleation of Ag nanoparticles by vacancy-type defects in Ar-ions implanted spinel

Vacancy-type defects are introduced into magnesium aluminate spine] (MgAl2O4 (1 1 0)) by Ar-ions implantation, and then Ag-ions are implanted into the depth rich in vacancy-type defects. The ultraviolet-visible spectrometry (UV-VIS) and positron annihilation spectroscopy (PAS) are used to study the influence of vacancy-type defects on nucleation of Ag nanoparticles. After introduction of vacancy-type defects the pronounced increase of surface plasmon resonance (SPR) absorbance intensity indicates that defects enhance the nucleation of Ag nanoparticles. The PAS results reveal that vacancy-type defects provide pre-nucleating centers for Ag nanoparticles nucleation and growth. (C) 2010 Elsevier B.V. All rights reserved.

Li同位素的结构和性质

锂同位素的结构性质，特别是滴线核 ~(11)Li的异常特性，目前微观机制并不很清楚。本文系统地研究了锂同位素基态和低位态的性质，包括基态结合能、能谱、电磁矩和电磁跃迁性质、及β衰变性质，发现~6Li核基态的四极矩敏感地依赖于相互作用力中的张量力分量，~6Li、~7Li和~8Li核的第一激发态电磁跃迁几率增大，呈现集体性，可能是由集团结构所致，对远离核~9Li的某些态需要考虑sd-shell组态侵入的影响。在~(6-9)Li核性质系统研究的基础上，发现滴线核~(11)Li核的结构性质仍可在壳模型框架内得到解释，平均场效应是引起其奇异性质的微观起因，对于~(10)Li核的性质仍需进一步探讨。对锂同位素引进平均场的同位旋依赖项尚需近一步研究。在3

Li蒸气电荷交换负He离子源的设计与调试

本论文分别从离子源的历史发展，负He离子的产生机理，设计思想及调试运行等方面描述了锂蒸气电荷交换负He离子源。该离子源可以引出1μA以上的He~-离子流，可连续稳定运行十二小时以上。本文研究了其性能，获得了束流强度随蒸气温度、引出电压的变化规律，并对蒸气靶靶厚、电荷交换截面、转化率进行了简单的估算。当引出电压为18KV，蒸气温度500 ℃时，靶厚为8.5 * 10~(13)cm~(-2)，交换截面为1.0 * 10~(-16)cm~2， 转化率为0.86%。最大负He离子流强为1.37℃A.该源配置在2 * 2MeV串列静电加速器上，可在核物理实验和离子束分析提供良好的He负离子流和负H离子流。本文还提出了一些改进完善意见和设想

Reduction property and catalytic activity of Ce1-XNiXO2 mixed oxide catalysts for CH4 oxidation

Ce1-XNiXO2 oxides with X varying from 0.05 to 0.5 were prepared by different methods and characterized by XRD and TPR techniques. Ce(0.7)Mi(0.3)O(2) sample prepared by sol-gel method shows the highest reducibility and the highest catalytic activity for methane combustion. Three kinds of Ni phases co-exist in the Ce1-XNiXO2 catalysts prepared by sol-gel method: (i) aggregated NiO on the support CeO2, (ii) highly dispersed NiO with strong interaction with CeO2 and (iii) Ni atoms incorporated into CeO2 lattice. The distribution of different Ni species strongly depends on the preparation methods. The highly dispersed NiO shows the highest activity for methane combustion. The NiO aggregated on the support CeO2 shows lower catalytic activity for methane combustion, while the least catalytic activity is found for the Ni species incorporated into CeO2. Any oxygen vacancy formed in CeO2 lattice due to the incorporating of Ni atoms adsorbs and activates the molecular oxygen to form active oxygen species. So the highest catalytic activity for methane combustion on Ce0.7Ni0.3O2 catalyst is attributed not only to the highly dispersed Ni species but also to the more active oxygen species formed. (C) 2002 Elsevier Science B.V. All rights reserved.

Activated carbon supported bimetallic CoMo carbides synthesized by carbothermal hydrogen reduction

A carbothermal hydrogen reduction method was employed for the preparation of activated carbon supported bimetallic carbide. The resultant samples were characterized by BET surface area measurement, X-ray diffraction, and temperature-programmed reduction-mass spectroscopy. The results showed that nanostructured beta-Mo2C can be formed on the activated carbon by carbothermal hydrogen reduction above 700 degreesC. The particle sizes of beta-Mo2C increase with increasing reaction temperatures and Mo loading. The bimetallic CoMo carbide can be synthesized by the carbothermal hydrogen reduction even around 600 degreesC. The bimetallic CoMo carbide is from carbothermal hydrogen reduction of CoMoO4 precursor and is easily formed when the Co/Mo molar ratio is 1.0. Separation of the bimetallic CoMo carbide phase into Mo carbide and Co metal occurs when the temperature of the reduction is above 700 degreesC. The addition of a second metal such as Co and Ni, decreases the formation temperature of carbide because the second metal promotes formation of CHx species from reactive carbon atoms or groups on carbon material and hydrogen, which further carburizes oxide precursors. (C) 2003 Elsevier Science Ltd. All rights reserved.