Low cost BIST techniques for linear and non-linear analog circuits

With the ever increasing demands for high complexity consumer electronic products, market pressures demand faster product development and lower cost. SoCbased design can provide the required design flexibility and speed by allowing the use of IP cores. However, testing costs in the SoC environment can reach a substantial percent of the total production cost. Analog testing costs may dominate the total test cost, as testing of analog circuits usually require functional verification of the circuit and special testing procedures. For RF analog circuits commonly used in wireless applications, testing is further complicated because of the high frequencies involved. In summary, reducing analog test cost is of major importance in the electronic industry today. BIST techniques for analog circuits, though potentially able to solve the analog test cost problem, have some limitations. Some techniques are circuit dependent, requiring reconfiguration of the circuit being tested, and are generally not usable in RF circuits. In the SoC environment, as processing and memory resources are available, they could be used in the test. However, the overhead for adding additional AD and DA converters may be too costly for most systems, and analog routing of signals may not be feasible and may introduce signal distortion. In this work a simple and low cost digitizer is used instead of an ADC in order to enable analog testing strategies to be implemented in a SoC environment. Thanks to the low analog area overhead of the converter, multiple analog test points can be observed and specific analog test strategies can be enabled. As the digitizer is always connected to the analog test point, it is not necessary to include muxes and switches that would degrade the signal path. For RF analog circuits, this is specially useful, as the circuit impedance is fixed and the influence of the digitizer can be accounted for in the design phase. Thanks to the simplicity of the converter, it is able to reach higher frequencies, and enables the implementation of low cost RF test strategies. The digitizer has been applied successfully in the testing of both low frequency and RF analog circuits. Also, as testing is based on frequency-domain characteristics, nonlinear characteristics like intermodulation products can also be evaluated. Specifically, practical results were obtained for prototyped base band filters and a 100MHz mixer. The application of the converter for noise figure evaluation was also addressed, and experimental results for low frequency amplifiers using conventional opamps were obtained. The proposed method is able to enhance the testability of current mixed-signal designs, being suitable for the SoC environment used in many industrial products nowadays.

Utilização de redes neurais artificiais para detecção e diagnóstico de falhas

In a real process, all used resources, whether physical or developed in software, are subject to interruptions or operational commitments. However, in situations in which operate critical systems, any kind of problem may bring big consequences. Knowing this, this paper aims to develop a system capable to detect the presence and indicate the types of failures that may occur in a process. For implementing and testing the proposed methodology, a coupled tank system was used as a study model case. The system should be developed to generate a set of signals that notify the process operator and that may be post-processed, enabling changes in control strategy or control parameters. Due to the damage risks involved with sensors, actuators and amplifiers of the real plant, the data set of the faults will be computationally generated and the results collected from numerical simulations of the process model. The system will be composed by structures with Artificial Neural Networks, trained in offline mode using Matlab®

Modelos de dispositivos de microondas e ópticos através de redes neurais artificiais de alimentação direta

This dissertation contributes for the development of methodologies through feed forward artificial neural networks for microwave and optical devices modeling. A bibliographical revision on the applications of neuro-computational techniques in the areas of microwave/optical engineering was carried through. Characteristics of networks MLP, RBF and SFNN, as well as the strategies of supervised learning had been presented. Adjustment expressions of the networks free parameters above cited had been deduced from the gradient method. Conventional method EM-ANN was applied in the modeling of microwave passive devices and optical amplifiers. For this, they had been proposals modular configurations based in networks SFNN and RBF/MLP objectifying a bigger capacity of models generalization. As for the training of the used networks, the Rprop algorithm was applied. All the algorithms used in the attainment of the models of this dissertation had been implemented in Matlab

Erbium and ytterbium co-doped SiO2 : GeO2 planar waveguide prepared by the sol-gel route using an alternative precursor

The sol-gel method combined with a spin-coating technique has been successfully applied for the preparation of rare-earth doped silica:germania films used for the fabrication of erbium-doped waveguide amplifiers (EDWA), presenting several advantages over other methods for the preparation of thin films. As with other methods, the sol-gel route also shows some drawbacks, such as cracks related to the thickness of silica films and high hydrolysis rate of certain precursors such as germanium alkoxides. This article describes the preparation and optical characterization of erbium and ytterbium co-doped SiO2:GeO2 crack-free thick films prepared by the sol-gel route combined with a spin-coating technique using a chemically stable non-aqueous germanium oxide solution as an alternative precursor. The non-crystalline films obtained are planar waveguides exhibiting a single mode at 1,550 nm with an average thickness of 3.9 mu m presenting low percentages of porosity evaluated by the Lorentz-Lorenz Effective Medium Approximation, and low stress, according to the refractive index values measured in both transversal electric and magnetic polarizations. Weakly confining core layers (0.3% < Delta n < 0.75%) were obtained according to the refractive index difference between the core and buffer layers, suggesting that low-loss coupling EDWA may be obtained. The life time of the erbium I-4(13/2) metastable state was measured as a function of erbium concentration in different systems and based on these values it is possible to infer that the hydroxyl group was reduced and the formation of rare-earth clusters was avoided.

Er3+-doped germanate glasses for active waveguides prepared by Ag+/K+ <-> Na+ ion-exchange

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Crystallization of ZrF4-LaF3-AlF3 glasses

0.7125ZrF4-0.2375(1 - xLaF3 • xLnF3)-0.05AIF3 with x = 0.01, 0.02 and 0.03 for Ln = Er and x = 0.03 for Ln = Pr, Nd glasses were studied by differential thermal analysis (DTA), X-ray diffraction and optical spectroscopy. Avrami parameters (Ec and n) were obtained from DTA curves. With La3+ substitution a decrease in the stability against crystallization was observed. This decrease follows the order Er3+ > Nd3+ ≈ Pr3+ for 3% molar substitution. n values suggest an interface controlled growth mechanism with grain edge nucleation abler saturation. Two crystalline polymorphs of the LaZr3F15 phase were identified. With the substitution of 3 mol% of Pr3+, Nd3+ or Er3+ for La3+ only the crystallization of the rhombohedral α-LnZr3F15 phase was observed. An increase in Ω6 Judd's intensity parameter occurs with crystallization and also an increase in the 1.04 μm peak emission cross-section for Nd3+ 4I3/2 state suggesting the potential application of these glass ceramics in optical amplification devices. © 1997 Elsevier Science B.V.

Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAs PHEMT technology

The design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz receiver front-end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz, LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz.

A low-voltage programmable-gain CMOS amplifier with very-low temperature-drift

A new topology for a LVLP variable-gain CMOS amplifier is presented. Input- and load-stage are built around triode-transconductors so that voltage-gain is fully defined by a linear relationship involving only device-geometries and biases. Excellent gain-accuracy, temperature-insensitivity; and wide range of programmability, are thus achieved. Moreover, adaptative biasing improves the common-mode voltage stability upon gain-adjusting. As an example, a 0-40dB programmablegain audio-amplifier is designed. Its performance is supported by a range of simulations. For VDD=1.8V and 20dB-nominal gain, one has Av=19.97dB, f3db=770KHz and quiescent dissipation of 378μW. Over temperatures from -25°C to 125°C, the 0. ldB-bandwidth is 52KHz. Dynamic-range is optimized to 57.2dB and 42.6dB for gains of 20dB and 40dB, respectively. THD figures correspond to -60.6dB@Vout= 1Vpp and -79.7dB@Vout= 0.5 Vpp. A nearly constant bandwidth for different gains is also attained.

A low-voltage programmable-gain current-mode amplifier

A CMOS low-voltage, wide-band continuous-time current amplifier is presented. Based on an open-loop topology, the circuit is composed by transresistance and transconductance stages built around triode-operating transistors. In addition to an extended dynamic range, the amplifier gain can be programmed within good accuracy by the rapport between the aspect-ratio of such transistors and tuning biases Vxand Vy. A balanced current-amplifier according to a single I. IV-supply and a 0.35μm fabrication process is designed. Simulated results from PSPiCE and Bsm3v3 models indicate a programmable gain within the range 20-34dB and a minimum break-frequency of IMHz @CL=IpF. For a 200 μApp-level, THD is 0.8% and 0.9% at IKHz and 100KHz, respectively. Input noise is 405pA√Hz @20dB-gain, which gives a SNR of 66dB @1MHz-bandwidth. Maximum quiescent power consumption is 56μ W. © 2002 IEEE.

Pressure field in the cathode-anode region of a high-power klystron amplifier

The pressure field of a high-power klystron amplifier in the cathode and anode region was investigated. The investigation was performed using a 1.3 GHz, 100 A and 240 kV high-power klystron with five reentrant coaxial cavities, assembled in cylindrical drift tube 1.2 m long. The diffusion equation in mathematical model was also solved by using a 3-D finite element method code, in order to obtain pressure profile in region of interest. The results show that density profile of molecules between cathode-anode region was determined, where cathode pressure is approximately 10% higher than anode pressure.

A Gm-C bump equalizer for low-voltage low-power applications

A low-voltage low-power 2nd-order CMOS pseudo-differential bump-equalizer is presented. Its topology comprises a bandpass section with adjustable center frequency and quality factor, together with a programmable current amplifier. The basic building blocks are triode-operating transconductors, tunable by means of either a DC voltage or a digitally controlled current divider. The bump-equalizer as part of a battery-operated hearing aid device is designed for a 1.4V-supply and a 0.35μm CMOS fabrication process. The circuit performance is supported by a set of simulation results, which indicates a center frequency from 600Hz to 2.4kHz, 1≤Q≤5, and an adjustable gain within ±6dB at center frequency. The filter dynamic range lies around 40dB. Quiescent consumption is kept below 12μW for any configuration of the filter.

High sensitivity low cost capacitive strain gage

This paper describes a high senstivity low cost capacitive strain gage sensor. The theory, design, and sensor construction details are presented. It consists of eight capacitive sensors connected in two full bridges. The capacitive strain gage sensor structure was designed in order to produce high sensitivity and low dependence with temperature. By using a simple signal conditioning circuit constituted by a differential amplifier, a band-pass filter, and a precision rectifier the device can measure forces with resolution of 0.009 N and precision of 98.7%. It is rugged, presents linear response, and good repeatability. It presents sensitivity of 8.7 V/N and fall time of 12 ms.

Installation of a getter vacuum pump in cathode-anode region of a high-power klystron amplifier - Propose and feasible

The possibility to install a getter vacuum pump and its feasible in the anode of a high-power klystron amplifier is investigated in order to decrease of the pressure in the gun and consequently increasing its lifetime. The study is conducted using a 1.3 GHz, 100 A and 240 kV high-power klystron with five reentrant coaxial cavities, assembled in a cylindrical drift tube 1.2 m long. This work takes into account the specific conductance of components of gun and all important gas sources, like the degassing of the drift tube, the cavity walls, the cathode, the anode, and the collector, as well the position and pumping speed of the getter vacuum pump in anode region. © 2006 IEEE.

Radial basis function network applied to the linearization of a voltage controlled oscillator

An analog circuit that implements a radial basis function network is presented. The proposed circuit allows the adjustment of all shape parameters of the radial functions, i.e., amplitude, center and width. The implemented network was applied to the linearization of a nonlinear circuit, a voltage controlled oscillator (VCO). This application can be classified as an open-loop control in which the network plays the role of the controller. Experimental results have proved the linearization capability of the proposed circuit. Its performance can be improved by using a network with more basis functions. Copyright 2007 ACM.

Active control in rotating machinery using magnetic actuators with linear matrix inequalities (LMI) approach

The recent years have seen the appearance of innovative system for acoustic and vibration attenuation, most of them integrating new actuator technologies. In this sense, the study of algorithms for active vibrations control in rotating machinery became an area of enormous interest, mainly due to countless demands of an optimal performance of mechanical systems in aircraft, aerospace and automotive structures. In this way, this paper presents an approach that is numerically verified for active vibration control in a rotor using Active Magnetic Bearings (AMB). The control design in a discrete state-space formulation is carried out through feedback technique and Linear Matrix Inequalities (LMI) approach. LMI is useful for system with uncertainties. The AMB uses electromagnetic forces to support a rotor without mechanical contact. By monitoring the position of the shaft and changing the dynamics of the system accordingly, the AMB keeps the rotor in a desired position. This unique feature has broadened for the applications of AMB and now they can be considered not only as a main support bearing in a machine but also as dampers for vibration control and force actuators. © 2009 Society for Experimental Mechanics Inc.