A multi-proxy palaeoenvironmental investigation of the findspot of an Iron Age bog body from Oldcroghan, Co. Offaly, Ireland

In 2003, the remains of an Early Iron Age bog body, known as ‘Oldcroghan Man’, were recovered during the cutting of a drainage ditch in a bog in the Irish Midlands. Only some fingernails and a withe fragment remained undisturbed in situ in the drain face, providing the sole evidence for the original position of the body. A detailed reconstruction of the depositional context of the body has been undertaken through multi-proxy analyses of a peat monolith collected at the findspot. The palynological record shows that the surrounding area was the focus of intensive human activity during the Later Bronze Age, but was largely abandoned during the Bronze Age–Iron transition in the mid-first millennium BC. In the mid-4th century BC, a bog pool developed at the site, evidenced in the stratigraphic, plant macrofossil, testate amoebae and coleopteran records. Plant macrofossil and pollen analysis of peat samples associated with the fingernails suggests that the body was deposited in this pool most likely during the 3rd century BC. The absence of carrion beetle fauna points to complete submergence of the body within the pool. Deposition occurred shortly before or around the time that the surrounding area again became the focus of woodland clearance, as seen in the extended pollen record from the peat monolith. This period corresponds to the Early Iron Age in Ireland, during which renewed cultural connections with Britain and continental Europe can be seen in the archaeological record and widespread forest clearance is recorded in pollen records from across Ireland. The palaeoenvironmental results indicate, therefore, that the demise of Oldcroghan Man took place at a pivotal time of socio-economic and perhaps political change.

ABCB1 (MDR1) rs1045642 is associated with increased overall survival in plasma cell myeloma

Multi-drug resistance (MDR) may compromise the successful management of haematological malignancies, impairing the effectiveness of chemotherapy. The P-glycoprotein (P-gp) drug efflux pump, encoded by the gene ABCB1 (MDR1), is the most widely studied component in MDR. A single nucleotide polymorphism (SNP) has been identified within ABCB1, rs1045642 (C3435T), which may alter P-gp substrate specificity and have an impact on the effectiveness of treatment, and hence overall survival (OS). We estimated the frequency of this SNP in the Northern Irish population and investigated its impact on the OS of patients with plasma cell myeloma (PCM). There was no significant difference in the frequency of rs1045642 between the PCM cohort and an age- and gender-matched control population. Findings within the PCM cohort suggest that rs1045642 genotype influences OS (p = 2 x 10(-2)). If confirmed in larger studies, these results suggest that genotyping rs1045642 may be a useful predictor of outcome in PCM and could indicate modified treatment modalities in certain individuals.

Series-L/parallel-tuned comparison with shunt-C/series-tuned class-E power amplifier

An analysis of the operation of a series-L/parallel-tuned class-E amplifier and its equivalence to the classic shunt-C/series-tuned class-E amplifier are presented. The first reported closed form design equations for the series-L/parallel-tuned topology operating under ideal switching conditions are given. Furthermore, a design procedure is introduced that allows the effect that nonzero switch resistance has on amplifier performance efficiency to be accounted for. The technique developed allows optimal circuit components to be found for a given device series resistance. For a relatively high value of switching device ON series resistance of 4O, drain efficiency of around 66% for the series-L/parallel-tuned topology, and 73% for the shunt-C/series-tuned topology appear to be the theoretical limits. At lower switching device series resistance levels, the efficiency performance of each type are similar, but the series-L/parallel-tuned topology offers some advantages in terms of its potential for MMIC realisation. Theoretical analysis is confirmed by numerical simulation for a 500mW (27dBm), 10% bandwidth, 5 V series-L/parallel-tuned, then, shunt-C/series-tuned class E power amplifier, operating at 2.5 GHz, and excellent agreement between theory and simulation results is achieved. The theoretical work presented in the paper should facilitate the design of high-efficiency switched amplifiers at frequencies commensurate with the needs of modern mobile wireless applications in the microwave frequency range, where intrinsically low-output-capacitance MMIC switching devices such as pHEMTs are to be used.

Envelope-tracking-based Doherty power amplifier

From the instantaneous efficiency plot, it is observed that the conventional 2-stage Doherty power amplifier (DPA) with high upper power dynamic range (>12 dB) suffers from a substantial dip in the middle of the upper power regime, thus reducing the average efficiency. In this study, an envelope-tracking-based DPA is proposed in order to minimise this dip by adjusting the drain bias voltage of the auxiliary amplifier of the DPA proportional to the input power level.

Digital Baseband Predistortion Based Linearized Broadband Inverse Class-E Power Amplifier

A newly introduced inverse class-E power amplifier (PA) was designed, simulated, fabricated, and characterized. The PA operated at 2.26 GHz and delivered 20.4-dBm output power with peak drain efficiency (DE) of 65% and power gain of 12 dB. Broadband performance was achieved across a 300-Mitz bandwidth with DE of better than 50% and 1-dB output-power flatness. The concept of enhanced injection predistortion with a capability to selectively suppress unwanted sub-frequency components and hence suitable for memory effects minimization is described coupled with a new technique that facilitates an accurate measurement of the phase of the third-order intermodulation (IM3) products. A robust iterative computational algorithm proposed in this paper dispenses with the need for manual tuning of amplitude and phase of the IM3 injected signals as commonly employed in the previous publications. The constructed inverse class-E PA was subjected to a nonconstant envelope 16 quadrature amplitude modulation signal and was linearized using combined lookup table (LUT) and enhanced injection technique from which superior properties from each technique can be simultaneously adopted. The proposed method resulted in 0.7% measured error vector magnitude (in rms) and 34-dB adjacent channel leakage power ratio improvement, which was 10 dB better than that achieved using the LUT predistortion alone.

Power-Combining Class-E Amplifier With Finite Choke

A recently introduced power-combining scheme for a Class-E amplifier is, for the first time, experimentally validated in this paper. A small value choke of 2.2 nH was used to substitute for the massive dc-feed inductance required in the classic Class-E circuit. The power-combining amplifier presented, which operates from a 3.2-V dc supply voltage, is shown to be able to deliver a 24-dBm output power and a 9.5-dB gain, with 64% drain efficiency and 57% power-added efficiency at 2.4 GHz. The power amplifier exhibits a 350-MHz bandwidth within which a drain efficiency that is better than 60% and an output power that is higher than 22 dBm were measured. In addition, by adopting three-harmonic termination strategy, excellent second-and third-harmonic suppression levels of 50 and 46 dBc, respectively, were obtained. The complete design cycle from analysis through fabrication to characterization is explained. © 2010 IEEE.

An efficient neural network approach for nanoscale FinFET modelling and circuit simulation

The present paper demonstrates the suitability of artificial neural network (ANN) for modelling of a FinFET in nano-circuit simulation. The FinFET used in this work is designed using careful engineering of source-drain extension, which simultaneously improves maximum frequency of oscillation f(max) because of lower gate to drain capacitance, and intrinsic gain A(V0) = g(m)/g(ds), due to lower output conductance g(ds). The framework for the ANN-based FinFET model is a common source equivalent circuit, where the dependence of intrinsic capacitances, resistances and dc drain current I-d on drain-source V-ds and gate-source V-gs is derived by a simple two-layered neural network architecture. All extrinsic components of the FinFET model are treated as bias independent. The model was implemented in a circuit simulator and verified by its ability to generate accurate response to excitations not used during training. The model was used to design a low-noise amplifier. At low power (J(ds) similar to 10 mu A/mu m) improvement was observed in both third-order-intercept IIP3 (similar to 10 dBm) and intrinsic gain A(V0) (similar to 20 dB), compared to a comparable bulk MOSFET with similar effective channel length. This is attributed to higher ratio of first-order to third-order derivative of I-d with respect to gate voltage and lower g(ds), in FinFET compared to bulk MOSFET. Copyright (C) 2009 John Wiley & Sons, Ltd.

How crucial is back gate misalignment/oversize in double gate MOSFETs for ultra-low-voltage analog/rf applications?

In the present work, by investigating the influence of source/drain (S/D) extension region engineering (also known as gate-underlap architecture) in planar Double Gate (DG) SOI MOSFETs, we offer new design insights to achieve high tolerance to gate misalignment/oversize in nanoscale devices for ultra-low-voltage (ULV) analog/rf applications. Our results show that (i) misaligned gate-underlap devices perform significantly better than DC devices with abrupt source/drain junctions with identical misalignment, (ii) misaligned gate underlap performance (with S/D optimization) exceeds perfectly aligned DG devices with abrupt S/D regions and (iii) 25% back gate misalignment can be tolerated without any significant degradation in cut-off frequency (f(T)) and intrinsic voltage gain (A(VO)). Gate-underlap DG devices designed with spacer-to-straggle ratio lying within the range 2.5 to 3.0 show best tolerance to misaligned/oversize back gate and indeed are better than self-aligned DG MOSFETs with non-underlap (abrupt) S/D regions. Impact of gate length and silicon film thickness scaling is also discussed. These results are very significant as the tolerable limit of misaligned/oversized back gate is considerably extended and the stringent process control requirements to achieve self-alignment can be relaxed for nanoscale planar ULV DG MOSFETs operating in weak-inversion region. The present work provides new opportunities for realizing future ULV analog/rf design with nanoscale gate-underlap DG MOSFETs. (C) 2008 Elsevier Ltd. All rights reserved.

Non Classical Design in MOSFETs for Improving OTA gain-bandwidth trade off

In this paper, gain-bandwidth (GB) trade-off associated with analog device/circuit design due to conflicting requirements for enhancing gain and cutoff frequency is examined. It is demonstrated that the use of a nonclassical source/drain (S/D) profile (also known as underlap channel) can alleviate the GB trade-off associated with analog design. Operational transconductance amplifier (OTA) with 60 nm underlap S/D MOSFETs achieve 15 dB higher open loop voltage gain along with three times higher cutoff frequency as compared to OTA with classical nonunderlap S/D regions. Underlap design provides a methodology for scaling analog devices into the sub-100 nm regime and is advantageous for high temperature applications with OTA, preserving functionality up to 540 K. Advantages of underlap architecture over graded channel (GC) or laterally asymmetric channel (LAC) design in terms of GB behavior are demonstrated. Impact of transistor structural parameters on the performance of OTA is also analyzed. Results show that underlap OTAs designed with spacer-to-straggle ratio of 3.2 and operated below a bias current of 80 microamps demonstrate optimum performance. The present work provides new opportunities for realizing future ultra wide band OTA design with underlap DG MOSFETs in silicon-on-insulator (SOI) technology. Index Terms—Analog/RF, double gate, gain-bandwidth product, .

Characterization of Nickel Germanide Schottky Contacts for the Fabrication of Germanium p-channel MOSFETs

Nickel germanide Schottky contacts, formed by rapid thermal annealing of thin nickel films, have been characterized on n-type germanium wafers for a range of RTA temperatures. The highest Schottky barrier heights for electrons (= 0.6-0.7 eV) were obtained for RTA temperatures of approximately 300°C. For this RTA schedule, the corresponding barrier height for holes is close to zero, ideal for Schottky contacted p-channel germanium MOSFETs. When the RTA temperature was increased to 400oC, a dramatic reduction in electron barrier height (< 0.1 eV) was observed. This RTA schedule, therefore, appears ideal for ohmic source/drain contacts to n channel germanium MOSFETs. From sheet resistance measurements and XRD characterization, nickel germanide formation was found to occur at 300oC and above. The NiGe phase was dominant for RTA temperatures up to at least 435oC.

Transmission-Line Class-E Power Amplifier With Extended Maximum Operating Frequency

A novel Class-E power amplifier (PA) topology with transmission-line load network is presented in this brief. When compared with the classic Class-E topology, the new circuit can increase the maximum operating frequency up to 50% higher without trading the other Class-E figures of merit. Neither quarterwave line/massive radio-frequency choke for collector/drain biasing nor additional fundamental-frequency output matching circuit are needed in the proposed PA, thus resulting in a compact design. Closed-form formulations are derived and verified by simulations with practical design limitations carefully taken into consideration and good agreement achieved.

Towards a better understanding of the nature and contribution of the interflow to catchment dynamics.

A detailed understanding of flow and contaminant transfer along each of the key hydrological pathways within a catchment is critical for designing and implementing cost effective Programmes of Measures under the Water
Framework Directive.
The Contaminant Movement along Pathways Project (’The Pathways Project’) is an Irish, EPA STRIVE funded, large multi-disciplinary project which is focussed on understanding and modelling flow and attenuation along each of these pathways for the purposes of developing a catchment management tool. The tool will be used by EPA and RBD catchment managers to assess and manage the impacts of diffuse contamination on stream aquatic ecology. Four main contaminants of interest — nitrogen, phosphorus, sediment and pathogens — are being
investigated in four instrumented test catchments. In addition to the usual hydrological and water chemistry/quality parameters typically captured in catchment studies, field measurements at the test catchments include ecological
sampling, sediment dynamics, soil moisture dynamics, and groundwater levels and chemistry/quality, both during and between significant rainfall events. Spatial and temporal sampling of waters directly from the pathways of
interest is also being carried out.
Sixty-five percent of Ireland is underlain by poorly productive aquifers. In these hydrogeological settings, the main pathways delivering flow to streams are overland flow, interflow and shallow bedrock flow. Little is
known about the interflow pathway and its relative importance in delivery of flow and contaminants to the streams. Interflow can occur in both the topsoil and subsoil, and may include unsaturated matrix flow, bypass or macropore
flow, saturated flow in locally perched water tables and artificial field drainage.
Results to date from the test catchment experiments show that artificial field drains play an important role in the delivery of interflow to these streams, during and between rainfall events when antecedent conditions are
favourable. Hydrochemical mixing models, using silica and SAC254 (the absorbance of UV light at a wavelength of 254 nm which is a proxy for dissolved organic matter) as tracers, show that drain flow is an important end
member contributing to the stream and that proportionally, its contribution is relatively high.
Results from the study also demonstrate that waters originating from one pathway often mix with the waters from another, and are subsequently delivered to the stream at rates, and with chemical/quality characteristics,
that are not typical of either pathway. For example, pre-event shallow groundwater not far from the catchment divide comes up to the surface as rejected recharge during rainfall events and is rapidly delivered to the stream
via overland flow and/or artificial land drainage, bringing with it higher nitrate than would often be expected from a quickflow pathway contribution. This is contrary to the assumption often made in catchment studies that the
deeper hydrological pathways have slower response times in stream hydrographs during a rainfall event, and it emphasizes that it is critical to have a strong three-dimensional conceptual model as the basis for the interpretation
of catchment data.

Clara Bog: An ombotrophic groundwater dependant terrestrial ecosystem (Submitted)

Comparison of flow duration curves for a weir draining an undrained raised peat with those generated 20 years previously reveal that more recent curves reflect to be flatter with a lower Q95/Q5 ratio. Comparison of the bog topography for the same period revealed that although marginal drainage/peat reclamation had resulted in desiccation of peat around the bog margin and more frequent intense runoff, the central part of the bog had subsided to form an enclosed basin ,resulting in the creation of newly formed lakes that gave the central part of the bog an improved capacity to store, and more slowly discharge, water. Interrogation of groundwater monitoring data revealed a net decline in groundwater levels of up to three metres in the glacial tills underlying the bog associated with deepening and expansion of a marginal drain network which penetrated the base of the peat. Comparing organic carbon levels in peat the central part of the bog over a ten year period revealed an overall increase, with changes being most marked in deeper fen peat layers. These findings suggest that the decline in groundwater levels in the peat substrate resulted in an increase in effective stress in the peat causing greater subsidence in the central part of the bog due to greater overall thickness. Study results highlight how the hydrology of apparently isolated obotrophic raised bog ecosystems may be influenced by groundwater pressures in deeper deposits, and how marginal drains may have the capacity to impact areas at significant distances.

Cytokine phenotype, genotype, and renal outcomes at cardiac surgery

Cardiac surgery modulates pro- and anti-inflammatory cytokine balance involving plasma tumour necrosis factor alpha (TNFa) and interleukin-10 (IL-10) together with urinary transforming growth factor beta-1 (TGFß1), interleukin-1 receptor antagonist (IL1ra) and tumour necrosis factor soluble receptor-2 (TNFsr2). Effects on post-operative renal function are unclear. We investigated if following cardiac surgery there is a relationship between cytokine (a) phenotype and renal outcome; (b) genotype and phenotype and (c) genotype and renal outcome. Since angiotensin-2 (AG2), modulates TGFß1 production, we determined whether angiotensin converting enzyme insertion/deletion (ACE I/D) genotype affects urinary TGFß1 phenotype as well as renal outcome.

Downstream changes in the transport and storage of sediment-associated contaminants (P, Cr and PCBs) in agricultural and industrialized drainage basins

Samples of suspended, floodplain and channel bed sediment have been used to examine downstream changes in ediment-associated contaminant transport and storage in contrasting rivers in Yorkshire, UK. The concentrations of hosphorus, chromium and selected PCBs associated with sediment in the River Aire and its main tributary, the River Calder, which drain an urbanized and industrialized catchment, are considerably higher than those in the relatively unpolluted River Swale, which drains an agricultural catchment. Concentrations of sediment-associated contaminants in the Aire/Calder system increase downstream, reflecting the location of urban and industrial areas in the middle and lower reaches, and the location of point source inputs, such as sewage treatment works. The ontaminant concentrations associated with floodplain and channel bed sediment in the Rivers Aire and Calder are high, particularly in the lower reaches. This, combined with measurements of sediment storage on the floodplain and channel bed, indicate that significant storage of sediment-associated contaminants occurs in the Rivers Aire and Calder.