A numerical study of Bi-periodic binary diffraction gratings for solar cell applications

In this paper, a numerical study is made of simple bi-periodic binary diffraction gratings for solar cell applications. The gratings consist of hexagonal arrays of elliptical towers and wells etched directly into the solar cell substrate. The gratings are applied to two distinct solar cell technologies: a quantum dot intermediate band solar cell (QD-IBSC) and a crystalline silicon solar cell (SSC). In each case, the expected photocurrent increase due to the presence of the grating is calculated assuming AM1.5D illumination. For each technology, the grating period, well/tower depth and well/tower radii are optimised to maximise the photocurrent. The optimum parameters are presented. Results are presented for QD-IBSCs with a range of quantum dot layers and for SSCs with a range of thicknesses. For the QD-IBSC, it is found that the optimised grating leads to an absorption enhancement above that calculated for an ideally Lambertian scatterer for cells with less than 70 quantum dot layers. In a QD-IBSC with 50 quantum dot layers equipped with the optimum grating, the weak intermediate band to conduction band transition absorbs roughly half the photons in the corresponding sub-range of the AM1.5D spectrum. For the SSC, it is found that the optimised grating leads to an absorption enhancement above that calculated for an ideally Lambertian scatterer for cells with thicknesses of 10 ?m or greater. A 20um thick SSC equipped with the optimised grating leads to an absorption enhancement above that of a 200um thick SSC equipped with a planar back reflector.

Extended Triple-Junction Solar Cell 3D Distributed Model: Application to Chromatic Aberration-Related Losses

An extended 3D distributed model based on distributed circuit units for the simulation of triple‐junction solar cells under realistic conditions for the light distribution has been developed. A special emphasis has been put in the capability of the model to accurately account for current mismatch and chromatic aberration effects. This model has been validated, as shown by the good agreement between experimental and simulation results, for different light spot characteristics including spectral mismatch and irradiance non‐uniformities. This model is then used for the prediction of the performance of a triple‐junction solar cell for a light spot corresponding to a real optical architecture in order to illustrate its suitability in assisting concentrator system analysis and design process.

Nanotechnology for more efficient photovoltaics: the quantum dot intermediate band solar cell

The intermediate band solar cell [1] has been proposed as a concept able to substantially enhance the efficiency limit of an ordinary single junction solar cell. If a band permitted for electrons is inserted within the forbidden band of a semiconductor then a novel path for photo generation is open: electron hole pairs may be formed by the successive absorption of two sub band gap photons using the intermediate band (IB) as a stepping stone. While the increase of the photovoltaic (PV) current is not a big achievement —it suffices to reduce the band gap— the achievement of this extra current at high voltage is the key of the IB concept. In ordinary cells the voltage is limited by the band gap so that reducing it would also reduce the band gap. In the intermediate band solar cell the high voltage is produced when the IB is permitted to have a Quasi Fermi Level (QFL) different from those of the Conduction Band (CB) and the Valence Band (VB). For it the cell must be properly isolated from the external contacts, which is achieved by putting the IB material between two n- and p-type ordinary semiconductors [2]. Efficiency thermodynamic limit of 63% is obtained for the IB solar cell1 vs. the 40% obtained [3] for ordinary single junction solar cells. Detailed information about the IB solar cells can be found elsewhere [4].

Mono-crystalline silicon wafers manufactured by casting methods: Optoelectronic, structural and solar cell study

1) Introduction 2) The Quasi-mono, pseudo-mono, mono-like ERA. 3) Manufacturing mono-cast ingots: COST (seed recycling) 4) Summary and findings 5) Current status at DCWafers

Dissolution and gettering of iron during contact co-firing

The dissolution and gettering of iron is studied during the final fabrication step of multicrystalline silicon solar cells, the co-firing step, through simulations and experiments. The post-processed interstitial iron concentration is simulated according to the as-grown concentration and distribution of iron within a silicon wafer, both in the presence and absence of the phosphorus emitter, and applying different time-temperature profiles for the firing step. The competing effects of dissolution and gettering during the short annealing process are found to be strongly dependant on the as-grown material quality. Furthermore, increasing the temperature of the firing process leads to a higher dissolution of iron, hardly compensated by the higher diffusivity of impurities. A new defect engineering tool is introduced, the extended co-firing, which could allow an enhanced gettering effect within a small additional time

Microprocesos láser para la mejora de dispositivos fotovoltaicos basados en silicio cristalino

En los últimos años la tecnología láser se ha convertido en una herramienta imprescindible en la fabricación de dispositivos fotovoltaicos, ayudando a la consecución de dos objetivos claves para que esta opción energética se convierta en una alternativa viable: reducción de costes de fabricación y aumento de eficiencia de dispositivo. Dentro de las tecnologías fotovoltaicas, las basadas en silicio cristalino (c-Si) siguen siendo las dominantes en el mercado, y en la actualidad los esfuerzos científicos en este campo se encaminan fundamentalmente a conseguir células de mayor eficiencia a un menor coste encontrándose, como se comentaba anteriormente, que gran parte de las soluciones pueden venir de la mano de una mayor utilización de tecnología láser en la fabricación de los mismos. En este contexto, esta Tesis hace un estudio completo y desarrolla, hasta su aplicación en dispositivo final, tres procesos láser específicos para la optimización de dispositivos fotovoltaicos de alta eficiencia basados en silicio. Dichos procesos tienen como finalidad la mejora de los contactos frontal y posterior de células fotovoltaicas basadas en c-Si con vistas a mejorar su eficiencia eléctrica y reducir el coste de producción de las mismas. En concreto, para el contacto frontal se han desarrollado soluciones innovadoras basadas en el empleo de tecnología láser en la metalización y en la fabricación de emisores selectivos puntuales basados en técnicas de dopado con láser, mientras que para el contacto posterior se ha trabajado en el desarrollo de procesos de contacto puntual con láser para la mejora de la pasivación del dispositivo. La consecución de dichos objetivos ha llevado aparejado el alcanzar una serie de hitos que se resumen continuación: - Entender el impacto de la interacción del láser con los distintos materiales empleados en el dispositivo y su influencia sobre las prestaciones del mismo, identificando los efectos dañinos e intentar mitigarlos en lo posible. - Desarrollar procesos láser que sean compatibles con los dispositivos que admiten poca afectación térmica en el proceso de fabricación (procesos a baja temperatura), como los dispositivos de heterounión. - Desarrollar de forma concreta procesos, completamente parametrizados, de definición de dopado selectivo con láser, contactos puntuales con láser y metalización mediante técnicas de transferencia de material inducida por láser. - Definir tales procesos de forma que reduzcan la complejidad de la fabricación del dispositivo y que sean de fácil integración en una línea de producción. - Mejorar las técnicas de caracterización empleadas para verificar la calidad de los procesos, para lo que ha sido necesario adaptar específicamente técnicas de caracterización de considerable complejidad. - Demostrar su viabilidad en dispositivo final. Como se detalla en el trabajo, la consecución de estos hitos en el marco de desarrollo de esta Tesis ha permitido contribuir a la fabricación de los primeros dispositivos fotovoltaicos en España que incorporan estos conceptos avanzados y, en el caso de la tecnología de dopado con láser, ha permitido hacer avances completamente novedosos a nivel mundial. Asimismo los conceptos propuestos de metalización con láser abren vías, completamente originales, para la mejora de los dispositivos considerados. Por último decir que este trabajo ha sido posible por una colaboración muy estrecha entre el Centro Láser de la UPM, en el que la autora desarrolla su labor, y el Grupo de Investigación en Micro y Nanotecnologías de la Universidad Politécnica de Cataluña, encargado de la preparación y puesta a punto de las muestras y del desarrollo de algunos procesos láser para comparación. También cabe destacar la contribución de del Centro de Investigaciones Energéticas, Medioambientales y Tecnológicas, CIEMAT, en la preparación de experimentos específicos de gran importancia en el desarrollo del trabajo. Dichas colaboraciones se han desarrollado en el marco de varios proyectos, tales como el proyecto singular estratégico PSE-MICROSIL08 (PSE-iv 120000-2006-6), el proyecto INNDISOL (IPT-420000-2010-6), ambos financiados por el Fondo Europeo de Desarrollo Regional FEDER (UE) “Una manera de hacer Europa” y el MICINN, y el proyecto del Plan Nacional AMIC (ENE2010-21384-C04-02), cuya financiación ha permitido en gran parte llevar a término este trabajo. v ABSTRACT. Last years lasers have become a fundamental tool in the photovoltaic (PV) industry, helping this technology to achieve two major goals: cost reduction and efficiency improvement. Among the present PV technologies, crystalline silicon (c-Si) maintains a clear market supremacy and, in this particular field, the technological efforts are focussing into the improvement of the device efficiency using different approaches (reducing for instance the electrical or optical losses in the device) and the cost reduction in the device fabrication (using less silicon in the final device or implementing more cost effective production steps). In both approaches lasers appear ideally suited tools to achieve the desired success. In this context, this work makes a comprehensive study and develops, until their implementation in a final device, three specific laser processes designed for the optimization of high efficiency PV devices based in c-Si. Those processes are intended to improve the front and back contact of the considered solar cells in order to reduce the production costs and to improve the device efficiency. In particular, to improve the front contact, this work has developed innovative solutions using lasers as fundamental processing tools to metalize, using laser induced forward transfer techniques, and to create local selective emitters by means of laser doping techniques. On the other side, and for the back contact, and approached based in the optimization of standard laser fired contact formation has been envisaged. To achieve these fundamental goals, a number of milestones have been reached in the development of this work, namely: - To understand the basics of the laser-matter interaction physics in the considered processes, in order to preserve the functionality of the irradiated materials. - To develop laser processes fully compatible with low temperature device concepts (as it is the case of heterojunction solar cells). - In particular, to parameterize completely processes of laser doping, laser fired contacts and metallization via laser transfer of material. - To define such a processes in such a way that their final industrial implementation could be a real option. - To improve widely used characterization techniques in order to be applied to the study of these particular processes. - To probe their viability in a final PV device. Finally, the achievement of these milestones has brought as a consequence the fabrication of the first devices in Spain incorporating these concepts. In particular, the developments achieved in laser doping, are relevant not only for the Spanish science but in a general international context, with the introduction of really innovative concepts as local selective emitters. Finally, the advances reached in the laser metallization approached presented in this work open the door to future developments, fully innovative, in the field of PV industrial metallization techniques. This work was made possible by a very close collaboration between the Laser Center of the UPM, in which the author develops his work, and the Research Group of Micro y Nanotecnology of the Universidad Politécnica de Cataluña, in charge of the preparation and development of samples and the assessment of some laser processes for comparison. As well is important to remark the collaboration of the Centro de Investigaciones Energéticas, Medioambientales y Tecnológicas, CIEMAT, in the preparation of specific experiments of great importance in the development of the work. These collaborations have been developed within the framework of various projects such as the PSE-MICROSIL08 (PSE-120000-2006-6), the project INNDISOL (IPT-420000-2010-6), both funded by the Fondo Europeo de Desarrollo Regional FEDER (UE) “Una manera de hacer Europa” and the MICINN, and the project AMIC (ENE2010-21384-C04-02), whose funding has largely allowed to complete this work.

Understanding experimental characterization of intermediate band solar cell

An intermediate band solar cell is a novel photovoltaic device with the potential to exceed the efficiency of single gap solar cells. In the last few years, several prototypes of these cells, based on different technologies, have been reported. Since these devices do not yet perform ideally, it is sometimes difficult to determine to what extent they operate as actual intermediate band solar cells. In this article we provide the essential guidelines to interpret conventional experimental results (current-voltage plots, quantum efficiency, etc.) associated with their characterization. A correct interpretation of these results is essential in order not to mislead the research efforts directed towards the improvement of the efficiency of these devices.

Mechanical Characterization of Multicrystalline Silicon Substrates for Solar Cell Applications

The possibility of using more economical silicon feedstock, i.e. as support for epitaxial solar cells, is of interest when the cost reduction and the properties are attractive. We have investigated the mechanical behaviour of two blocks of upgraded metallurgical silicon, which is known to present high content of impurities even after being purified by the directional solidification process. These impurities are mainly metals like Al and silicon compounds. Thus, it is important to characterize their effect in order to improve cell performance and to ensure the survival of the wafers throughout the solar value chain. Microstructure and mechanical properties were studied by means of ring on ring and three point bending tests. Additionally, elastic modulus and fracture toughness were measured. These results showed that it is possible to obtain marked improvements in toughness when impurities act as microscopic internal crack arrestors. However, the same impurities can be initiators of damage due to residual thermal stresses introduced during the crystallization process.

Triple-junction solar cell performance under Fresnel-based concentrators taking into account chromatic aberration and off-axis operation

Concentration photovoltaic (CPV) systems might produce quite uneven irradiance distributions (both on their level and on their spectral distribution) on the solar cell. This effect can be even more evident when the CPV system is slightly off-axis, since they are often designed to assure good uniformity only at normal incidence. The non-uniformities both in absolute irradiance and spectral content produced by the CPV systems, can originate electrical losses in multi-junction solar cells (MJSC). This works is focused on the integration of ray-tracing methods for simulating the irradiance and spectrum maps produced by different optic systems throughout the solar cell surface, with a 3D fully distributed circuit model which simulates the electrical behavior of a state-of-the-art triple-junction solar cell under the different light distributions obtained with ray-tracing. In this study four different CPV system (SILO, XTP, RTP, and FK) comprising Fresnel lenses concentrating sunlight onto the same solar cell are modeled when working on-axis and 0.6 degrees off-axis. In this study the impact of non-uniformities on a CPV system behavior is revealed. The FK outperforms other Fresnel-based CPV systems in both on-axis and off-axis conditions.

NGCPV: A new generation of concentrator photovoltaic cells, modules and systems

This work introduces the lines of research that the NGCPV project is pursuing and some of the first results obtained. Sponsored by the European Commission under the 7th Framework Program and NEDO (Japan) within the first collaborative call launched by both Bodies in the field of energy, NGCPV project aims at approaching the cost of the photovoltaic kWh to competitive prices in the framework of high concentration photovoltaics (CPV) by exploring the development and assessment of concentrator photovoltaic solar cells and modules, novel materials and new solar cell structures as well as methods and procedures to standardize measurement technology for concentrator photovoltaic cells and modules. More specific objectives we are facing are: (1) to manufacture a cell prototype with an efficiency of at least 45% and to undertake an experimental activity, (2) to manufacture a 35% module prototype and elaborate the roadmap towards the achievement of 40%, (3) to develop reliable characterization techniques for III-V materials and quantum structures, (4) to achieve and agreement within 5% in the characterization of CPV cells and modules in a round robin scheme, and (5) to evaluate the potential of new materials, devices technologies and quantum nanostructures to improve the efficiency of solar cells for CPV.

Guide to intermediate band solar cell research

The intermediate band solar cell (IBSC) is a solar cell that, in order to increase its efficiency over that of single gap solar cells, takes advantage of the absorption of below-bandgap energy photons by means of an intermediate band (IB) located in the semiconductor bandgap. For this process to improve the solar cell performance, the belowbandgap photon absorption has to be effective and the IB cannot limit the open-circuit voltage of the cell. In this paper we provide a guide to the new researcher interested in the idea in order he can quickly become familiar with the concept and updated with the most relevant experimental results.

Full-Wafer Roller-NIL Processes for Silicon Solar Cell Texturisation

The highest solar cell efficiencies both for c-Si and mc-Si were reached using template based texturing processes. Especially for mc-Si the benefit of a defined texture, the so called honeycomb texture, was demonstrated impressively. However, up until now, no industrially feasible process has been available to pattern the necessary etching masks with the sufficient resolution. Roller-Nanoimprint Lithography (Roller-NIL) has the potential to overcome these limitations and to allow high quality pattern transfers, even in the sub-micron regime, in continuous in-line processes. Therefore, this etch-mask patterning technique is a suitable solution to bring such elaborate features like the honeycomb texture to an industrial realization. Beyond that, this fast printing-like technology opens up new possibilities to introduce promising concepts like photonic structures into solar cells.

Free-form optical systems for nonimaging applications : Sistemas ópticos anamórficos para aplicaciones anidólicas

La óptica anidólica es una rama de la óptica cuyo desarrollo comenzó a mediados de la década de 1960. Este relativamente nuevo campo de la óptica se centra en la transferencia eficiente de la luz, algo necesario en muchas aplicaciones, entre las que destacamos los concentradores solares y los sistemas de iluminación. Las soluciones de la óptica clásica a los problemas de la transferencia de energía de la luz sólo son adecuadas cuando los rayos de luz son paraxiales. La condición paraxial no se cumple en la mayoría de las aplicaciones para concentración e iluminación. Esta tesis contiene varios diseños free-form (aquellos que no presentan ninguna simetría, ni de rotación ni lineal) cuyas aplicaciones van destinadas a estos dos campos. El término nonimaging viene del hecho de que estos sistemas ópticos no necesitan formar una imagen del objeto, aunque no formar la imagen no es una condición necesaria. Otra palabra que se utiliza a veces en lugar de nonimaging es la palabra anidólico, viene del griego "an+eidolon" y tiene el mismo significado. La mayoría de los sistemas ópticos diseñados para aplicaciones anidólicas no presentan ninguna simetría, es decir, son free-form (anamórficos). Los sistemas ópticos free-form están siendo especialmente relevantes durante los últimos años gracias al desarrollo de las herramientas para su fabricación como máquinas de moldeo por inyección y el mecanizado multieje. Sin embargo, solo recientemente se han desarrollado técnicas de diseño anidólicas capaces de cumplir con estos grados de libertad. En aplicaciones de iluminación el método SMS3D permite diseñar dos superficies free-form para controlar las fuentes de luz extensas. En los casos en que se requiere una elevada asimetría de la fuente, el objeto o las restricciones volumétricos, las superficies free-form permiten obtener soluciones de mayor eficiencia, o disponer de menos elementos en comparación con las soluciones de simetría de rotación, dado que las superficies free-form tienen más grados de libertad y pueden realizar múltiples funciones debido a su naturaleza anamórfica. Los concentradores anidólicos son muy adecuados para la captación de energía solar, ya que el objetivo no es la reproducción de una imagen exacta del sol, sino sencillamente la captura de su energía. En este momento, el campo de la concentración fotovoltaica (CPV) tiende hacia sistemas de alta concentración con el fin de compensar el gasto de las células solares multi-unión (MJ) utilizadas como receptores, reduciendo su área. El interés en el uso de células MJ radica en su alta eficiencia de conversión. Para obtener sistemas competitivos en aplicaciones terrestres se recurre a sistemas fotovoltaicos de alta concentración (HCPV), con factores de concentración geométrica por encima de 500x. Estos sistemas se componen de dos (o más) elementos ópticos (espejos y/o lentes). En los sistemas presentados a lo largo de este trabajo se presentan ejemplos de concentradores HCPV con elementos reflexivos como etapa primaria, así como concentradores con elementos refractivos (lente de Fresnel). Con la necesidad de aumentar la eficiencia de los sistemas HCPV reales y con el fin de proporcionar la división más eficiente del espectro solar, células conteniendo cuatro o más uniones (con un potencial de alcanzar eficiencias de más del 45% a una concentración de cientos de soles) se exploran hoy en día. En esta tesis se presenta una de las posibles arquitecturas de división del espectro (spectrum-splitting en la literatura anglosajona) que utilizan células de concentración comercial. Otro campo de aplicación de la óptica nonimaging es la iluminación, donde es necesario proporcionar un patrón de distribución de la iluminación específico. La iluminación de estado sólido (SSL), basada en la electroluminiscencia de materiales semiconductores, está proporcionando fuentes de luz para aplicaciones de iluminación general. En la última década, los diodos emisores de luz (LED) de alto brillo han comenzado a reemplazar a las fuentes de luz convencionales debido a la superioridad en la calidad de la luz emitida, elevado tiempo de vida, compacidad y ahorro de energía. Los colimadores utilizados con LEDs deben cumplir con requisitos tales como tener una alta eficiencia, un alto control del haz de luz, una mezcla de color espacial y una gran compacidad. Presentamos un colimador de luz free-form con microestructuras capaz de conseguir buena colimación y buena mezcla de colores con una fuente de LED RGGB. Una buena mezcla de luz es importante no sólo para simplificar el diseño óptico de la luminaria sino también para evitar hacer binning de los chips. La mezcla de luz óptica puede reducir los costes al evitar la modulación por ancho de pulso y otras soluciones electrónicas patentadas para regulación y ajuste de color. Esta tesis consta de cuatro capítulos. Los capítulos que contienen la obra original de esta tesis son precedidos por un capítulo introductorio donde se presentan los conceptos y definiciones básicas de la óptica geométrica y en el cual se engloba la óptica nonimaging. Contiene principios de la óptica no formadora de imagen junto con la descripción de sus problemas y métodos de diseño. Asimismo se describe el método de Superficies Múltiples Simultáneas (SMS), que destaca por su versatilidad y capacidad de controlar varios haces de rayos. Adicionalmente también se describe la integración Köhler y sus aplicaciones en el campo de la energía fotovoltaica. La concentración fotovoltaica y la iluminación de estado sólido son introducidas junto con la revisión de su estado actual. El Segundo y Tercer Capítulo contienen diseños ópticos avanzados con aplicación en la concentración solar principalmente, mientras que el Cuarto Capítulo describe el colimador free-form con surcos que presenta buena mezcla de colores para aplicaciones de iluminación. El Segundo Capítulo describe dos concentradores ópticos HCPV diseñados con el método SMS en tres dimensiones (SMS3D) que llevan a cabo integración Köhler en dos direcciones con el fin de proporcionar una distribución de irradiancia uniforme libre de aberraciones cromáticas sobre la célula solar. Uno de los diseños es el concentrador XXR free-form diseñado con el método SMS3D, donde el espejo primario (X) y la lente secundaria (R) se dividen en cuatro sectores simétricos y llevan a cabo la integración Köhler (proporcionando cuatro unidades del array Köhler), mientras que el espejo intermedio (X) presenta simetría rotacional. Otro concentrador HCPV presentado es el Fresnel-RXI (FRXI) con una lente de Fresnel funcionando como elemento primario (POE) y una lente RXI como elemento óptico secundario (SOE), que presenta configuración 4-fold con el fin de realizar la integración Köhler. Las lentes RXI son dispositivos nonimaging conocidos, pero su aplicación como elemento secundario es novedosa. Los concentradores XXR y FRXI Köhler son ejemplos académicos de muy alta concentración (más de 2,000x, mientras que los sistemas convencionales hoy en día no suelen llegar a 1,000x) preparados para las células solares N-unión (con N>3), que probablemente requerirán una mayor concentración y alta uniformidad espectral de irradiancia con el fin de obtener sistemas CPV terrestres eficientes y rentables. Ambos concentradores están diseñados maximizando funciones de mérito como la eficiencia óptica, el producto concentración-aceptancia (CAP) y la uniformidad de irradiancia sobre la célula libre de la aberración cromática (integración Köhler). El Tercer Capítulo presenta una arquitectura para la división del espectro solar basada en un módulo HCPV con alta concentración (500x) y ángulo de aceptancia alto (>1º) que tiene por objeto reducir ambas fuentes de pérdidas de las células triple unión (3J) comerciales: el uso eficiente del espectro solar y la luz reflejada de los contactos metálicos y de la superficie de semiconductor. El módulo para la división del espectro utiliza el espectro solar más eficiente debido a la combinación de una alta eficiencia de una célula de concentración 3J (GaInP/GaInAs/Ge) y una de contacto posterior (BPC) de concentración de silicio (Si), así como la técnica de confinamiento externo para la recuperación de la luz reflejada por la célula 3J con el fin de ser reabsorbida por la célula. En la arquitectura propuesta, la célula 3J opera con su ganancia de corriente optimizada (concentración geométrica de 500x), mientras que la célula de silicio trabaja cerca de su óptimo también (135x). El módulo de spectrum-splitting consta de una lente de Fresnel plana como POE y un concentrador RXI free-form como SOE con un filtro paso-banda integrado en él. Tanto POE como SOE realizan la integración Köhler para producir homogeneización de luz sobre la célula. El filtro paso banda envía los fotones IR en la banda 900-1,150nm a la célula de silicio. Hay varios aspectos prácticos de la arquitectura del módulo presentado que ayudan a reducir la complejidad de los sistemas spectrum-splitting (el filtro y el secundario forman una sola pieza sólida, ambas células son coplanarias simplificándose el cableado y la disipación de calor, etc.). Prototipos prueba-de-concepto han sido ensamblados y probados a fin de demostrar la fabricabilidad del filtro y su rendimiento cuando se combina con la técnica de reciclaje de luz externa. Los resultados obtenidos se ajustan bastante bien a los modelos y a las simulaciones e invitan al desarrollo de una versión más compleja de este prototipo en el futuro. Dos colimadores sólidos con surcos free-form se presentan en el Cuarto Capítulo. Ambos diseños ópticos están diseñados originalmente usando el método SMS3D. La segunda superficie ópticamente activa está diseñada a posteriori como una superficie con surcos. El diseño inicial de dos espejos (XX) está diseñado como prueba de concepto. En segundo lugar, el diseño RXI free-form es comparable con los colimadores RXI existentes. Se trata de un diseño muy compacto y eficiente que proporciona una muy buena mezcla de colores cuando funciona con LEDs RGB fuera del eje óptico como en los RGB LEDs convencionales. Estos dos diseños son dispositivos free-form diseñados con la intención de mejorar las propiedades de mezcla de colores de los dispositivos no aplanáticos RXI con simetría de revolución y la eficiencia de los aplanáticos, logrando una buena colimación y una buena mezcla de colores. La capacidad de mezcla de colores del dispositivo no-aplanático mejora añadiendo características de un aplanático a su homólogo simétrico sin pérdida de eficiencia. En el caso del diseño basado en RXI, su gran ventaja consiste en su menor coste de fabricación ya que el proceso de metalización puede evitarse. Aunque algunos de los componentes presentan formas muy complejas, los costes de fabricación son relativamente insensibles a la complejidad del molde, especialmente en el caso de la producción en masa (tales como inyección de plástico), ya que el coste del molde se reparte entre todas las piezas fabricadas. Por último, las últimas dos secciones son las conclusiones y futuras líneas de investigación. ABSTRACT Nonimaging optics is a branch of optics whose development began in the mid-1960s. This rather new field of optics focuses on the efficient light transfer necessary in many applications, among which we highlight solar concentrators and illumination systems. The classical optics solutions to the problems of light energy transfer are only appropriate when the light rays are paraxial. The paraxial condition is not met in most applications for the concentration and illumination. This thesis explores several free-form designs (with neither rotational nor linear symmetry) whose applications are intended to cover the above mentioned areas and more. The term nonimaging comes from the fact that these optical systems do not need to form an image of the object, although it is not a necessary condition not to form an image. Another word sometimes used instead of nonimaging is anidolic, and it comes from the Greek “an+eidolon” and has the same meaning. Most of the optical systems designed for nonimaging applications are without any symmetry, i.e. free-form. Free-form optical systems become especially relevant lately with the evolution of free-form tooling (injection molding machines, multi-axis machining techniques, etc.). Nevertheless, only recently there are nonimaging design techniques that are able to meet these degrees of freedom. In illumination applications, the SMS3D method allows designing two free-form surfaces to control very well extended sources. In cases when source, target or volumetric constrains have very asymmetric requirements free-form surfaces are offering solutions with higher efficiency or with fewer elements in comparison with rotationally symmetric solutions, as free-forms have more degrees of freedom and they can perform multiple functions due to their free-form nature. Anidolic concentrators are well suited for the collection of solar energy, because the goal is not the reproduction of an exact image of the sun, but instead the collection of its energy. At this time, Concentration Photovoltaics (CPV) field is turning to high concentration systems in order to compensate the expense of multi-junction (MJ) solar cells used as receivers by reducing its area. Interest in the use of MJ cells lies in their very high conversion efficiency. High Concentration Photovoltaic systems (HCPV) with geometric concentration of more than 500x are required in order to have competitive systems in terrestrial applications. These systems comprise two (or more) optical elements, mirrors and/or lenses. Systems presented in this thesis encompass both main types of HCPV architectures: concentrators with primary reflective element and concentrators with primary refractive element (Fresnel lens). Demand for the efficiency increase of the actual HCPV systems as well as feasible more efficient partitioning of the solar spectrum, leads to exploration of four or more junction solar cells or submodules. They have a potential of reaching over 45% efficiency at concentration of hundreds of suns. One possible architectures of spectrum splitting module using commercial concentration cells is presented in this thesis. Another field of application of nonimaging optics is illumination, where a specific illuminance distribution pattern is required. The Solid State Lighting (SSL) based on semiconductor electroluminescence provides light sources for general illumination applications. In the last decade high-brightness Light Emitting Diodes (LEDs) started replacing conventional light sources due to their superior output light quality, unsurpassed lifetime, compactness and energy savings. Collimators used with LEDs have to meet requirements like high efficiency, high beam control, color and position mixing, as well as a high compactness. We present a free-form collimator with microstructures that performs good collimation and good color mixing with RGGB LED source. Good light mixing is important not only for simplifying luminaire optical design but also for avoiding die binning. Optical light mixing may reduce costs by avoiding pulse-width modulation and other patented electronic solutions for dimming and color tuning. This thesis comprises four chapters. Chapters containing the original work of this thesis are preceded by the introductory chapter that addresses basic concepts and definitions of geometrical optics on which nonimaging is developed. It contains fundamentals of nonimaging optics together with the description of its design problems, principles and methods, and with the Simultaneous Multiple Surface (SMS) method standing out for its versatility and ability to control several bundles of rays. Köhler integration and its applications in the field of photovoltaics are described as well. CPV and SSL fields are introduced together with the review on their background and their current status. Chapter 2 and Chapter 3 contain advanced optical designs with primarily application in solar concentration; meanwhile Chapter 4 portrays the free-form V-groove collimator with good color mixing property for illumination application. Chapter 2 describes two HCPV optical concentrators designed with the SMS method in three dimensions (SMS3D). Both concentrators represent Köhler integrator arrays that provide uniform irradiance distribution free from chromatic aberrations on the solar cell. One of the systems is the XXR free-form concentrator designed with the SMS3D method. The primary mirror (X) of this concentrator and secondary lens (R) are divided in four symmetric sectors (folds) that perform Köhler integration; meanwhile the intermediate mirror (X) is rotationally symmetric. Second HCPV concentrator is the Fresnel-RXI (FRXI) with flat Fresnel lens as the Primary Optical Element (POE) and an RXI lens as the Secondary Optical Element (SOE). This architecture manifests 4-fold configuration for performing Köhler integration (4 array units), as well. The RXI lenses are well-known nonimaging devices, but their application as SOE is novel. Both XXR and FRXI Köhler HCPV concentrators are academic examples of very high concentration (more than 2,000x meanwhile conventional systems nowadays have up to 1,000x) prepared for the near future N-junction (N>3) solar cells. In order to have efficient and cost-effective terrestrial CPV systems, those cells will probably require higher concentrations and high spectral irradiance uniformity. Both concentrators are designed by maximizing merit functions: the optical efficiency, concentration-acceptance angle (CAP) and cell-irradiance uniformity free from chromatic aberrations (Köhler integration). Chapter 3 presents the spectrum splitting architecture based on a HCPV module with high concentration (500x) and high acceptance angle (>1º). This module aims to reduce both sources of losses of the actual commercial triple-junction (3J) solar cells with more efficient use of the solar spectrum and with recovering the light reflected from the 3J cells’ grid lines and semiconductor surface. The solar spectrum is used more efficiently due to the combination of a high efficiency 3J concentration cell (GaInP/GaInAs/Ge) and external Back-Point-Contact (BPC) concentration silicon (Si) cell. By employing external confinement techniques, the 3J cell’s reflections are recovered in order to be re-absorbed by the cell. In the proposed concentrator architecture, the 3J cell operates at its optimized current gain (at geometrical concentration of 500x), while the Si cell works near its optimum, as well (135x). The spectrum splitting module consists of a flat Fresnel lens (as the POE), and a free-form RXI-type concentrator with a band-pass filter embedded in it (as the SOE), both POE and SOE performing Köhler integration to produce light homogenization. The band-pass filter sends the IR photons in the 900-1,150nm band to the Si cell. There are several practical aspects of presented module architecture that help reducing the added complexity of the beam splitting systems: the filter and secondary are forming a single solid piece, both cells are coplanar so the heat management and wiring is simplified, etc. Two proof-of-concept prototypes are assembled and tested in order to prove filter manufacturability and performance, as well as the potential of external light recycling technique. Obtained measurement results agree quite well with models and simulations, and show an opened path to manufacturing of the Fresnel RXI-type secondary concentrator with spectrum splitting strategy. Two free-form solid V-groove collimators are presented in Chapter 4. Both free-form collimators are originally designed with the SMS3D method. The second mirrored optically active surface is converted in a grooved surface a posteriori. Initial two mirror (XX) design is presented as a proof-of-concept. Second, RXI free-form design is comparable with existing RXI collimators as it is a highly compact and a highly efficient design. It performs very good color mixing of the RGGB LED sources placed off-axis like in conventional RGB LEDs. Collimators described here improve color mixing property of the prior art rotationally symmetric no-aplanatic RXI devices, and the efficiency of the aplanatic ones, accomplishing both good collimation and good color mixing. Free-form V-groove collimators enhance the no-aplanatic device's blending capabilities by adding aplanatic features to its symmetric counterpart with no loss in efficiency. Big advantage of the RXI design is its potentially lower manufacturing cost, since the process of metallization may be avoided. Although some components are very complicated for shaping, the manufacturing costs are relatively insensitive to the complexity of the mold especially in the case of mass production (such as plastic injection), as the cost of the mold is spread in many parts. Finally, last two sections are conclusions and future lines of investigation.

Intermediate band solar energy conversion in ZnTeO

Energy conversion in solar cells incorporating ZnTeO base layers is presented. The ZnTeO base layers incorporate intermediate electronic states located approximately 0.4eV below the conduction band edge as a result of the substitution of O in Te sites in the ZnTe lattice. Cells with ZnTeO base layers demonstrate optical response at energies lower than the ZnTe bandedge, a feature that is absent in reference cells with ZnTe base layers. Quantum efficiency is significantly improved with the incorporation of ZnSe emitter/window layers and transition from growth on GaAs substrates to GaSb substrates with a near lattice match to ZnTe.

Estudio de las propiedades mecánicas de obleas de silicio

En esta tesis se propone un procedimiento para evaluar la resistencia mecánica de obleas de silicio cristalino y se aplica en diferentes casos válidos para la industria. En el sector de la industria fotovoltaica predomina la tecnología basada en paneles de silicio cristalino. Estos paneles están compuestos por células solares conectadas en serie y estas células se forman a partir de obleas de silicio. Con el objetivo de disminuir el coste del panel, en los últimos años se ha observado una clara tendencia a la reducción del espesor de las obleas. Esta reducción del espesor modifica la rigidez de las obleas por lo que ha sido necesario modificar la manera tradicional de manipularlas con el objetivo de mantener un bajo ratio de rotura. Para ello, es necesario conocer la resistencia mecánica de las obleas. En la primera parte del trabajo se describen las obleas de silicio, desde su proceso de formación hasta sus propiedades mecánicas. Se muestra la influencia de la estructura cristalográfica en la resistencia y en el comportamiento ya que el cristal de silicio es anisótropo. Se propone también el método de caracterización de la resistencia. Se utiliza un criterio probabilista basado en los métodos de dimensionamiento de materiales frágiles en el que la resistencia queda determinada por los parámetros de la ley de Weibull triparamétrica. Se propone el procedimiento para obtener estos parámetros a partir de campañas de ensayos, modelización numérica por elementos finitos y un algoritmo iterativo de ajuste de los resultados. En la segunda parte de la tesis se describen los diferentes tipos de ensayos que se suelen llevar a cabo con este material. Se muestra además, para cada uno de los ensayos descritos, un estudio comparativo de diferentes modelos de elementos finitos simulando los ensayos. Se comparan tanto los resultados aportados por cada modelo como los tiempos de cálculo. Por último, se presentan tres aplicaciones diferentes donde se ha aplicado este procedimiento de estudio. La primera aplicación consiste en la comparación de la resistencia mecánica de obleas de silicio en función del método de crecimiento del lingote. La resistencia de las tradicionales obleas monocristalinas obtenidas por el método Czochralski y obleas multicristalinas es comparada con las novedosas obleas quasi-monocristalinas obtenidas por métodos de fundición. En la segunda aplicación se evalúa la profundidad de las grietas generadas en el proceso de corte del lingote en obleas. Este estudio se realiza de manera indirecta: caracterizando la resistencia de grupos de obleas sometidas a baños químicos de diferente duración. El baño químico reduce el espesor de las obleas eliminando las capas más dañadas. La resistencia de cada grupo es analizada y la comparación permite obtener la profundidad de las grietas generadas en el proceso de corte. Por último, se aplica este procedimiento a un grupo de obleas con características muy especiales: obleas preparadas para formar células de contacto posterior EWT. Estas obleas presentan miles de agujeros que las debilitan considerablemente. Se aplica el procedimiento de estudio propuesto con un grupo de estas obleas y se compara la resistencia obtenida con un grupo de referencia. Además, se propone un método simplificado de estudio basado en la aplicación de una superficie de intensificación de tensiones. ABSTRACT In this thesis, a procedure to evaluate the mechanical strength of crystalline silicon wafers is proposed and applied in different studies. The photovoltaic industry is mainly based on crystalline silicon modules. These modules are composed of solar cells which are based on silicon wafers. Regarding the cost reduction of solar modules, a clear tendency to use thinner wafers has been observed during last years. Since the stiffness varies with thickness, the manipulation techniques need to be modified in order to guarantee a low breakage rate. To this end, the mechanical strength has to be characterized correctly. In the first part of the thesis, silicon wafers are described including the different ways to produce them and the mechanical properties of interest. The influence of the crystallographic structure in the strength and the behaviour (the anisotropy of the silicon crystal) is shown. In addition, a method to characterize the mechanical strength is proposed. This probabilistic procedure is based on methods to characterize brittle materials. The strength is characterized by the values of the three parameters of the Weibull cumulative distribution function (cdf). The proposed method requires carrying out several tests, to simulate them through Finite Element models and an iterative algorithm in order to estimate the parameters of the Weibull cdf. In the second part of the thesis, the different types of test that are usually employed with these samples are described. Moreover, different Finite Element models for the simulation of each test are compared regarding the information supplied by each model and the calculation times. Finally, the method of characterization is applied to three examples of practical applications. The first application consists in the comparison of the mechanical strength of silicon wafers depending on the ingot growth method. The conventional monocrystalline wafers based on the Czochralski method and the multicrystalline ones are compared with the new quasi-monocrystalline substrates. The second application is related to the estimation of the crack length caused by the drilling process. An indirect way is used to this end: several sets of silicon wafers are subjected to chemical etchings of different duration. The etching procedure reduces the thickness of the wafers removing the most damaged layers. The strength of each set is obtained by means of the proposed method and the comparison permits to estimate the crack length. At last, the procedure is applied to determine the strength of wafers used for the design of back-contact cells of type ETW. These samples are drilled in a first step resulting in silicon wafers with thousands of tiny holes. The strength of the drilled wafers is obtained and compared with the one of a standard set without holes. Moreover, a simplified approach based on a stress intensification surface is proposed.