955 resultados para Pulsed laser range finder
Resumo:
Ferroelectric c-oriented Bi2VO5.5 (BVO) thin films (thickness approximate to 300 nm) were fabricated by pulsed laser deposition on corning glass substrates. Nonlinear refractive index (n(2)) and two photon absorption coefficient (beta) were measured by Z-scan technique at 532 nm wavelength delivering pulses with 10 ns duration. Relatively large values of n(2) = 2.05 +/- 0.2 x 10(-10) cm(2)/W and beta = 9.36 +/- 0.3 cm/MW were obtained for BVO thin films. Origin of the large optical nonlinearities in BVO thin films was discussed based on bond-orbital theory of transition metal oxides. (c) 2012 Elsevier B.V. All rights reserved.
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We report the evidence for the anisotropic magnetoimpedance behavior in (001) oriented La0.7Sr0.3MnO3 (LSMO) thin films, in low frequency-low magnetic field regime. (001) oriented LSMO thin films were deposited using pulsed laser deposition and characterized with X-ray diffraction and temperature dependent magnetization studies. In the in-plain configuration, an ac magnetoresistance (MRac) of similar to -0.5% was observed at 1000 Oe, at 100 Hz frequency in these films. The MRac was found to decrease with increase in frequency. We observe increases in MRac at low frequency, indicating major contribution for change of permeability from domain wall motion. At higher frequencies, it decreases due to decrease in transverse permeability, resulting from dampening of domain wall motion. Out-of-plane configuration showed MRac similar to 5.5% at 1000 Oe, at 100 Hz frequency. The MRac turned from positive to negative with increase in frequency in out-of-plane configuration. These changes are attributed to the change in permeability of the film with the frequency and applied magnetic field.
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Exchange biased Fe(FM)-FeMn(AFM) bilayers were grown by pulsed laser ablation in UHV and probed by SQUID magnetometer and planar Hall effect measurements. A suppression of barkhausen avalanches was observed during the switching of the bilayer when compared to that of pure Fe, which is indicative of a change in the reversal mechanism.
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Epitaxial La0.5Sr0.5CoO3 (LSCO) thin films are grown on LaAlO3 (100) and SrTiO3 (100) substrates by pulsed laser ablation. By tuning the growth parameters, we are able to enhance the ferromagnetic transition temperature (T-C) up to 262 K as evident from ac susceptibility, dc magnetization, and resistivity measurements. The magnitude of T-C is the same as that for the bulk stoichiometric LSCO illustrating the high quality of the grown films. Detailed structural analysis clearly reveals that the induced strain in the LSCO film has no role behind this enhancement; in fact, the determining factor is the oxygen stoichiometry. The films also exhibit ageing effect as the T-C decreases with time. This is considered in terms of gradual change in the oxygen stoichiometry through diffusion process as the time progresses. (C) 2013 AIP Publishing LLC.
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Zinc Oxide (ZnO) and indium doped ZnO (IZO) thin films with different indium compositions were grown on p-type boron doped Si substrates by pulsed laser deposition (PLD). The effect of indium concentration on the structural, optical and electrical properties of the film was studied. XRD, XPS and Raman studies confirm the single phase formation and successful doping of In in to ZnO. We observed various photoluminescence emissions, ranging from UV to visible, with the incorporation of In into ZnO. Room temperature Current-Voltage (I-V) characteristics showed good p-n junction properties for n-type-undoped and In doped ZnO with p-type substrates. The turn on voltage was observed to be decreasing with increase in In composition.
Effect of low oxygen pressure on structural and magnetic properties of quenched SrFe12O19 thin films
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Strontium hexaferrite thin films have been grown on glass substrates at room temperature in oxygen environment by pulsed laser deposition method. The effect of oxygen pressure (p(o2)) on the structural and magnetic properties has been investigated. The as-deposited films were found to be amorphous in nature. The crystallization of these films was achieved by annealing at a temperature of 850 A degrees C in air. The thickness of the film increased with p(o2). The film grown at p(o2) = 0.455 Pa had a clear hexagonal structure. The values of coercivity for the films were found to increase with p(o2).
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Oriented Strontium Ferrite films with the c axis orientation were deposited with varying oxygen partial pressure on Al2O3(0001) substrate using Pulsed Laser Deposition technique. The angle dependent magnetic hysteresis, remanent coercivity, and temperature dependent coercivity had been employed to understand the magnetization reversal of these films. It was found that the Strontium Ferrite thin film grown at lower (higher) oxygen partial pressure shows Stoner-Wohlfarth type (Kondorsky like) reversal. The relative importance of pinning and nucleation processes during magnetization reversal is used to explain the type of the magnetization reversal with different oxygen partial pressure during growth. (C) 2014 AIP Publishing LLC.
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Thin film of Fe3O4 is grown on (100) oriented GaAs substrate using pulsed laser deposition (PLD). The films were found to be (111) oriented. They were characterized morphologically as well as magnetically. They show Verwey transition at 120 K with the coercivity of 220 Oe at room temperature. These films were found to show magnetoimpedance effect with the ac magnetoresistance (MRac) of the order of similar to -6% at 10 MHz, at room temperature. The MRac was found to increase in low field-low frequency regime and decrease in low field high frequency regime.
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In this communication, we report the results of the studies on structural, microstructural, transport and magnetotransport behavior of L0.8-xPr0.2SrxMnO3 (LPSMO) (x=0.1, 0.2 and 0.3) manganite films grown on (100) single crystalline SrTiO3 (STO) substrate using low cost chemical solution deposition (CSD) method. Films with similar compositions were also grown using sophisticated pulsed laser deposition (PLD) technique and results of structural and transport studies obtained for CSD grown films were compared with PLD grown films. Structural studies show that all the CSD and PLD grown films possess single crystalline nature with compressive and tensile strain, respectively. Surface morphology, studied using atomic force microscope (AFM), reveals the island like grain morphology in CSD grown films while PLD grown films possess smooth film surfaces. Carrier density dependent transport properties of the films have been discussed in the context of zener double exchange (ZDE) mechanism. Lower resistivity and higher transition temperature (T-p) observed in CSD grown films as compared to PLD grown films have been discussed in the light of structural strain and surface morphology of the films. Various models and mechanisms have been employed to understand the charge transport in CSD and PLD grown films. Also, observation of low temperature resistivity minima behavior in all the CSD and PLD grown LPSMO films has been explained in the context of electron-electron scattering mechanism. (C) 2015 Elsevier B.V. All rights reserved.
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We employed in situ pulsed laser deposition (PLD) and angle-resolved photoemission spectroscopy (ARPES) to investigate the mechanism of the metal-insulator transition (MIT) in NdNiO3 (NNO) thin films, grown on NdGaO3(110) and LaAlO3(100) substrates. In the metallic phase, we observe three-dimensional hole and electron Fermi surface (FS) pockets formed from strongly renormalized bands with well-defined quasiparticles. Upon cooling across the MIT in NNO/NGO sample, the quasiparticles lose coherence via a spectral weight transfer from near the Fermi level to localized states forming at higher binding energies. In the case of NNO/LAO, the bands are apparently shifted upward with an additional holelike pocket forming at the corner of the Brillouin zone. We find that the renormalization effects are strongly anisotropic and are stronger in NNO/NGO than NNO/LAO. Our study reveals that substrate-induced strain tunes the crystal field splitting, which changes the FS properties, nesting conditions, and spin-fluctuation strength, and thereby controls the MIT via the formation of an electronic order parameter with QAF similar to (1/4,1/4,1/4 +/- delta).
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We report on the observation of stable p-type conductivity in B and N co-doped epitaxial ZnO thin films grown by pulsed laser deposition. Films grown at higher oxygen partial pressure (similar to 10(-1) Torr) shows p-type conductivity with a carrier concentration of similar to 3 x 10(16) cm(-3). This p-type conductivity is associated with the significant decrease in defect emission peaks due to the vacancy oxygen (V-O) and Schottky type-I native defects compared to films grown at low oxygen partial pressure (similar to 10(-5) Torr). The p-type conductivity is explained with the help of density functional theory (DFT) calculation considering off-stoichiometric BN1+x in the ZnO lattice. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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建立了包含脉冲激光强度时空分布、温度相关的材料热物性参数以及多次相变特征在内的脉冲激光表面强化三维有限元模型。温度场和强化区深度分别得到了解析解和试验验证。针对不同脉冲能量级别,研究了强度空间分布形式和光斑几何形状对表面最高温度、强化区深度以及强化区形状等的影响。结果表明,激光强度空间分布是影响强化区的重要因素。为达到理想的强化效果,应根据不同的脉冲能量选择适当的空间分布形式和光斑几何形状。
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建立了包含脉冲激光束时空分布、依赖于温度的材料参量、组织演化历史以及多次相变特征在内的脉冲激光表面强化三维有限元模型。针对常热物性和变热物性并考虑相变潜热两种情况,温度场及其演化分别得到了解析解和通用有限元软件的验证,强化区层深和宽度得到了实验验证。研究了材料热物性对强化区的影响,得到了一定范围内强化区层深随材料热物性参量的变化规律,即:热传导系数不变时,强化区层深随热扩散率的增加而增加;比热容不变时,强化区层深随热扩散率的增加而减小;热扩散率一定时,强化区层深随热传导系数和比热容的增加而降低。以球铁、共析钢和巾碳钢为例,分析了两种确定材料热物性常数方法,即一定温度范围内的平均值法和选取奥氏体化温度附近参量方法的可行性,研究表明平均值法可以得到较好的结果。
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A new method for measuring the density, temperature and velocity of N2 gas flow by laser induced biacetyl phosphorescence is proposed. The characteristics of the laser induced phosphorescence of biacetyl mixed with N2 are investigated both in static gas and in one-dimensional flow along a pipe with constant cross section. The theoretical and experimental investigations show that the temperature and density of N2 gas flow could be measured by observing the phosphorescence lifetime and initial intensity of biacetyl triplet (3Au) respectively. The velocity could be measured by observing the time-of-flight of the phosphorescent gas after pulsed laser excitation. The prospect of this method is also discussed.
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利用自行研制的含热传导、冲击动力学大、变形有限元程序,模拟了小尺寸梁在脉冲激光加热条件下的变形过程。在此基础上,利用商用程序模拟了冷却及残余应力的产生,研究了激光参数(强度及分布)等对于微弯曲的影响。数值模拟结果与文献中的实验观察相吻合。