Special Forces soldier's manual for MOS 11 B (SQI S) /

Oct. 16, 1979.

Design of diagnosable MOS networks /

"UILU-ENG 79 1745"--Cover.

Design of irredundant multiple-level MOS networks for multiple-output and incompletely specified functions /

Thesis (M. S.)--University of Illinois at Urbana-Champaign.

Design of Irredundant MOS Networks : a program manual for the design algorithm DIMN /

Thesis (M. S.)--University of Illinois at Urbana-Champaign.

Computer program for designing optimal networks with MOS gates,

Thesis-University of Illinois at Urbana-Champaign.

Synthesis of logic networks with MOS complex cells.

Vita.

Episēmos ephēmeris tēs Syneleuseōs ... Tomos 1-6. Dekemvrios 10, 1862-Noemvrios 16, 1864.

Official stenographic report of the debates of the conference.

Defects in PN junctions and MOS capacitors observed using thermally stimulated current and capacitance measurements, videotape script /

Includes bibliographical references (p. 14).

Istoria del cielo considerato secondo le idee de' poeti, de' filosofi e di Mosè : oue si fa vedere 1º L'origine del cielo poetico. 2º L'errore de' filosofi intorno alla fabbrica del cielo e della terra. 3º La conformità dell'esperienza con la sola fisica di Mosè.

Mode of access: Internet.

Lettera del ch. sig. abate Francesco Cancellieri al sig. canonico Domenico Moreni sopra la statua di Mosé del Buonarroti : con la Biblioteca mosaica, o sia, Catalogo degli scrittori intorno a questo profeta, legislatore, e condottiere del popolo ebreo.

Edited by D. Moreni.

Commanders manual : Hercules fire control crewman, MOS 16C.

May 10, 1978.

Synekdēmos hieratikos periechōn tas duo pros Timotheon kai tēn pros Titon Epistolas : tou Apostolou Paulou me mian koinēn metaphrasin kai exēgēsin diexodikēn.

Includes bibliographical references.

De neamul Moldovenilor : din ce tarǎ au eșit strǎmoșii lor /

At head of title: Comisia istoricǎ a României.

Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric

Thermal stability of AlGaN/GaN MOS-HEMTs and -diodes using Gd_(2)O_(3) are investigated by means of different thermal cycles and storage tests up to 500ºC for one week. IV DC and pulsed characteristics of the devices before and after the processes are evaluated and compared with conventional HEMTs. Results show that the devices with Gd_(2)O_(3) dielectric layer have lower leakage current and a more stable behavior during thermal treatment processes compared with conventional devices. In fact, an excellent on/off ratio of about 108 and a stable V_(t) is observed after storage at high temperature. The beneficial effects of Gd_(2)O_(3) on trapping effects of MOS-HEMTs are also dis-cussed.

A expressão plástica nas mãos das crianças

Relatório elaborado para obtenção do grau de mestre em educação pré-escolar