Low Voltage Ride-through in DFIG Wind Generators by Controlling the Rotor Current without Crowbars

Among all the different types of electric wind generators, those that are based on doubly fed induction generators, or DFIG technology, are the most vulnerable to grid faults such as voltage sags. This paper proposes a new control strategy for this type of wind generator, that allows these devices to withstand the effects of a voltage sag while following the new requirements imposed by grid operators. This new control strategy makes the use of complementary devices such as crowbars unnecessary, as it greatly reduces the value of currents originated by the fault. This ensures less costly designs for the rotor systems as well as a more economic sizing of the necessary power electronics. The strategy described here uses an electric generator model based on space-phasor theory that provides a direct control over the position of the rotor magnetic flux. Controlling the rotor magnetic flux has a direct influence on the rest of the electrical variables enabling the machine to evolve to a desired work point during the transient imposed by the grid disturbance. Simulation studies have been carried out, as well as test bench trials, in order to prove the viability and functionality of the proposed control strategy.

A low-area reference-free power supply sensor

Power supply unpredictable uctuations jeopardize the functioning of several types of current electronic systems. This work presents a power supply sensor based on a voltage divider followed by buffer-comparator cells employing just MOSFET transistors and provides a digital output. The divider outputs are designed to change more slowly than the thresholds of the comparators, in this way the sensor is able to detect voltage droops. The sensor is implemented in a 65nm technology node occupying an area of 2700?m2 and displaying a power consumption of 50?W. It is designed to work with no voltage reference and with no clock and aiming to obtain a fast response.

Technology and characterization of GaN-HEMTs devices: high temperature and trapping effects

Los transistores de alta movilidad electrónica basados en GaN han sido objeto de una extensa investigación ya que tanto el GaN como sus aleaciones presentan unas excelentes propiedades eléctricas (alta movilidad, elevada concentración de portadores y campo eléctrico crítico alto). Aunque recientemente se han incluido en algunas aplicaciones comerciales, su expansión en el mercado está condicionada a la mejora de varios asuntos relacionados con su rendimiento y habilidad. Durante esta tesis se han abordado algunos de estos aspectos relevantes; por ejemplo, la fabricación de enhancement mode HEMTs, su funcionamiento a alta temperatura, el auto calentamiento y el atrapamiento de carga. Los HEMTs normalmente apagado o enhancement mode han atraído la atención de la comunidad científica dedicada al desarrollo de circuitos amplificadores y conmutadores de potencia, ya que su utilización disminuiría significativamente el consumo de potencia; además de requerir solamente una tensión de alimentación negativa, y reducir la complejidad del circuito y su coste. Durante esta tesis se han evaluado varias técnicas utilizadas para la fabricación de estos dispositivos: el ataque húmedo para conseguir el gate-recess en heterostructuras de InAl(Ga)N/GaN; y tratamientos basados en flúor (plasma CF4 e implantación de F) de la zona debajo de la puerta. Se han llevado a cabo ataques húmedos en heteroestructuras de InAl(Ga)N crecidas sobre sustratos de Si, SiC y zafiro. El ataque completo de la barrera se consiguió únicamente en las muestras con sustrato de Si. Por lo tanto, se puede deducir que la velocidad de ataque depende de la densidad de dislocaciones presentes en la estructura, ya que el Si presenta un peor ajuste del parámetro de red con el GaN. En relación a los tratamientos basados en flúor, se ha comprobado que es necesario realizar un recocido térmico después de la fabricación de la puerta para recuperar la heteroestructura de los daños causados durante dichos tratamientos. Además, el estudio de la evolución de la tensión umbral con el tiempo de recocido ha demostrado que en los HEMTs tratados con plasma ésta tiende a valores más negativos al aumentar el tiempo de recocido. Por el contrario, la tensión umbral de los HEMTs implantados se desplaza hacia valores más positivos, lo cual se atribuye a la introducción de iones de flúor a niveles más profundos de la heterostructura. Los transistores fabricados con plasma presentaron mejor funcionamiento en DC a temperatura ambiente que los implantados. Su estudio a alta temperatura ha revelado una reducción del funcionamiento de todos los dispositivos con la temperatura. Los valores iniciales de corriente de drenador y de transconductancia medidos a temperatura ambiente se recuperaron después del ciclo térmico, por lo que se deduce que dichos efectos térmicos son reversibles. Se han estudiado varios aspectos relacionados con el funcionamiento de los HEMTs a diferentes temperaturas. En primer lugar, se han evaluado las prestaciones de dispositivos de AlGaN/GaN sobre sustrato de Si con diferentes caps: GaN, in situ SiN e in situ SiN/GaN, desde 25 K hasta 550 K. Los transistores con in situ SiN presentaron los valores más altos de corriente drenador, transconductancia, y los valores más bajos de resistencia-ON, así como las mejores características en corte. Además, se ha confirmado que dichos dispositivos presentan gran robustez frente al estrés térmico. En segundo lugar, se ha estudiado el funcionamiento de transistores de InAlN/GaN con diferentes diseños y geometrías. Dichos dispositivos presentaron una reducción casi lineal de los parámetros en DC en el rango de temperaturas de 25°C hasta 225°C. Esto se debe principalmente a la dependencia térmica de la movilidad electrónica, y también a la reducción de la drift velocity con la temperatura. Además, los transistores con mayores longitudes de puerta mostraron una mayor reducción de su funcionamiento, lo cual se atribuye a que la drift velocity disminuye más considerablemente con la temperatura cuando el campo eléctrico es pequeño. De manera similar, al aumentar la distancia entre la puerta y el drenador, el funcionamiento del HEMT presentó una mayor reducción con la temperatura. Por lo tanto, se puede deducir que la degradación del funcionamiento de los HEMTs causada por el aumento de la temperatura depende tanto de la longitud de la puerta como de la distancia entre la puerta y el drenador. Por otra parte, la alta densidad de potencia generada en la región activa de estos transistores conlleva el auto calentamiento de los mismos por efecto Joule, lo cual puede degradar su funcionamiento y Habilidad. Durante esta tesis se ha desarrollado un simple método para la determinación de la temperatura del canal basado en medidas eléctricas. La aplicación de dicha técnica junto con la realización de simulaciones electrotérmicas han posibilitado el estudio de varios aspectos relacionados con el autocalentamiento. Por ejemplo, se han evaluado sus efectos en dispositivos sobre Si, SiC, y zafiro. Los transistores sobre SiC han mostrado menores efectos gracias a la mayor conductividad térmica del SiC, lo cual confirma el papel clave que desempeña el sustrato en el autocalentamiento. Se ha observado que la geometría del dispositivo tiene cierta influencia en dichos efectos, destacando que la distribución del calor generado en la zona del canal depende de la distancia entre la puerta y el drenador. Además, se ha demostrado que la temperatura ambiente tiene un considerable impacto en el autocalentamiento, lo que se atribuye principalmente a la dependencia térmica de la conductividad térmica de las capas y sustrato que forman la heterostructura. Por último, se han realizado numerosas medidas en pulsado para estudiar el atrapamiento de carga en HEMTs sobre sustratos de SiC con barreras de AlGaN y de InAlN. Los resultados obtenidos en los transistores con barrera de AlGaN han presentado una disminución de la corriente de drenador y de la transconductancia sin mostrar un cambio en la tensión umbral. Por lo tanto, se puede deducir que la posible localización de las trampas es la región de acceso entre la puerta y el drenador. Por el contrario, la reducción de la corriente de drenador observada en los dispositivos con barrera de InAlN llevaba asociado un cambio significativo en la tensión umbral, lo que implica la existencia de trampas situadas en la zona debajo de la puerta. Además, el significativo aumento del valor de la resistencia-ON y la degradación de la transconductancia revelan la presencia de trampas en la zona de acceso entre la puerta y el drenador. La evaluación de los efectos del atrapamiento de carga en dispositivos con diferentes geometrías ha demostrado que dichos efectos son menos notables en aquellos transistores con mayor longitud de puerta o mayor distancia entre puerta y drenador. Esta dependencia con la geometría se puede explicar considerando que la longitud y densidad de trampas de la puerta virtual son independientes de las dimensiones del dispositivo. Finalmente se puede deducir que para conseguir el diseño óptimo durante la fase de diseño no sólo hay que tener en cuenta la aplicación final sino también la influencia que tiene la geometría en los diferentes aspectos estudiados (funcionamiento a alta temperatura, autocalentamiento, y atrapamiento de carga). ABSTRACT GaN-based high electron mobility transistors have been under extensive research due to the excellent electrical properties of GaN and its related alloys (high carrier concentration, high mobility, and high critical electric field). Although these devices have been recently included in commercial applications, some performance and reliability issues need to be addressed for their expansion in the market. Some of these relevant aspects have been studied during this thesis; for instance, the fabrication of enhancement mode HEMTs, the device performance at high temperature, the self-heating and the charge trapping. Enhancement mode HEMTs have become more attractive mainly because their use leads to a significant reduction of the power consumption during the stand-by state. Moreover, they enable the fabrication of simpler power amplifier circuits and high-power switches because they allow the elimination of negativepolarity voltage supply, reducing significantly the circuit complexity and system cost. In this thesis, different techniques for the fabrication of these devices have been assessed: wet-etching for achieving the gate-recess in InAl(Ga)N/GaN devices and two different fluorine-based treatments (CF4 plasma and F implantation). Regarding the wet-etching, experiments have been carried out in InAl(Ga)N/GaN grown on different substrates: Si, sapphire, and SiC. The total recess of the barrier was achieved after 3 min of etching in devices grown on Si substrate. This suggests that the etch rate can critically depend on the dislocations present in the structure, since the Si exhibits the highest mismatch to GaN. Concerning the fluorine-based treatments, a post-gate thermal annealing was required to recover the damages caused to the structure during the fluorine-treatments. The study of the threshold voltage as a function of this annealing time has revealed that in the case of the plasma-treated devices it become more negative with the time increase. On the contrary, the threshold voltage of implanted HEMTs showed a positive shift when the annealing time was increased, which is attributed to the deep F implantation profile. Plasma-treated HEMTs have exhibited better DC performance at room temperature than the implanted devices. Their study at high temperature has revealed that their performance decreases with temperature. The initial performance measured at room temperature was recovered after the thermal cycle regardless of the fluorine treatment; therefore, the thermal effects were reversible. Thermal issues related to the device performance at different temperature have been addressed. Firstly, AlGaN/GaN HEMTs grown on Si substrate with different cap layers: GaN, in situ SiN, or in situ SiN/GaN, have been assessed from 25 K to 550 K. In situ SiN cap layer has been demonstrated to improve the device performance since HEMTs with this cap layer have exhibited the highest drain current and transconductance values, the lowest on-resistance, as well as the best off-state characteristics. Moreover, the evaluation of thermal stress impact on the device performance has confirmed the robustness of devices with in situ cap. Secondly, the high temperature performance of InAlN/GaN HEMTs with different layouts and geometries have been assessed. The devices under study have exhibited an almost linear reduction of the main DC parameters operating in a temperature range from room temperature to 225°C. This was mainly due to the thermal dependence of the electron mobility, and secondly to the drift velocity decrease with temperature. Moreover, HEMTs with large gate length values have exhibited a great reduction of the device performance. This was attributed to the greater decrease of the drift velocity for low electric fields. Similarly, the increase of the gate-to-drain distance led to a greater reduction of drain current and transconductance values. Therefore, this thermal performance degradation has been found to be dependent on both the gate length and the gate-to-drain distance. It was observed that the very high power density in the active region of these transistors leads to Joule self-heating, resulting in an increase of the device temperature, which can degrade the device performance and reliability. A simple electrical method have been developed during this work to determine the channel temperature. Furthermore, the application of this technique together with the performance of electro-thermal simulations have enabled the evaluation of different aspects related to the self-heating. For instance, the influence of the substrate have been confirmed by the study of devices grown on Si, SiC, and Sapphire. HEMTs grown on SiC substrate have been confirmed to exhibit the lowest self-heating effects thanks to its highest thermal conductivity. In addition to this, the distribution of the generated heat in the channel has been demonstrated to be dependent on the gate-to-drain distance. Besides the substrate and the geometry of the device, the ambient temperature has also been found to be relevant for the self-heating effects, mainly due to the temperature-dependent thermal conductivity of the layers and the substrate. Trapping effects have been evaluated by means of pulsed measurements in AlGaN and InAIN barrier devices. AlGaN barrier HEMTs have exhibited a de crease in drain current and transconductance without measurable threshold voltage change, suggesting the location of the traps in the gate-to-drain access region. On the contrary, InAIN barrier devices have showed a drain current associated with a positive shift of threshold voltage, which indicated that the traps were possibly located under the gate region. Moreover, a significant increase of the ON-resistance as well as a transconductance reduction were observed, revealing the presence of traps on the gate-drain access region. On the other hand, the assessment of devices with different geometries have demonstrated that the trapping effects are more noticeable in devices with either short gate length or the gate-to-drain distance. This can be attributed to the fact that the length and the trap density of the virtual gate are independent on the device geometry. Finally, it can be deduced that besides the final application requirements, the influence of the device geometry on the performance at high temperature, on the self-heating, as well as on the trapping effects need to be taken into account during the device design stage to achieve the optimal layout.

Design, Technology and Characterization of Micromechanised Sensors and Actuators for Harsh Environments

Los sistemas micro electro mecánicos (MEMS) han demostrado ser una exitosa familia de dispositivos que pueden usarse como plataforma para el desarrollo de dispositivos con aplicaciones en óptica, comunicaciones, procesado de señal y sensorización. Los dispositivos MEMS estándar suelen estar fabricados usando tecnología de silicio. Sin embargo, el rendimiento de estos MEMS se puede mejorar si se usan otros materiales. Por ejemplo, el diamante nanocristalino (NCD) ofrece unas excelentes propiedades mecánicas, transparencia y una superficie fácil de funcionalizar. Por otro lado, el sistema de materiales (In; Ga; Al)N, los materiales IIIN, se pueden usar para producir estructuras monocristalinas con alta sensibilidad mecánica y química. Además, el AlN se puede depositar por pulverización catódica reactiva sobre varios substratos, incluyendo NCD, para formar capas policristalinas orientadas con alta respuesta piezoeléctrica. Adicionalmente, tanto el NCD como los materiales III-N muestran una gran estabilidad térmica y química, lo que los hace una elección idónea para desarrollar dispositivos para aplicaciones para alta temperatura, ambientes agresivos e incluso para aplicaciones biocompatibles. En esta tesis se han usado estos materiales para el diseño y medición de demostradores tecnológicos. Se han perseguido tres objetivos principales: _ Desarrollo de unos procesos de fabricación apropiados. _ Medición de las propiedades mecánicas de los materiales y de los factores que limitan el rendimiento de los dispositivos. _ Usar los datos medidos para desarrollar dispositivos demostradores complejos. En la primera parte de esta tesis se han estudiado varias técnicas de fabricación. La estabilidad de estos materiales impide el ataque y dificulta la producción de estructuras suspendidas. Los primeros capítulos de esta disertación se dedican al desarrollo de unos procesos de transferencia de patrones por ataque seco y a la optimización del ataque húmedo sacrificial de varios substratos propuestos. Los resultados de los procedimientos de ataque se presentan y se describe la optimización de las técnicas para la fabricación de estructuras suspendidas de NCD y materiales III-N. En un capítulo posterior se estudia el crecimiento de AlN por pulverización catódica. Como se ha calculado en esta disertación para obtener una actuación eficiente de MEMS, las capas de AlN han de ser finas, típicamente d < 200 nm, lo que supone serias dificultades para la obtención de capas orientadas con respuesta piezoeléctrica. Las condiciones de depósito se han mapeado para identificar las fronteras que proporcionan el crecimiento de material orientado desde los primeros pasos del proceso. Además, durante la optimización de los procesos de ataque se estudió un procedimiento para fabricar películas de GaN nanoporoso. Estas capas porosas pueden servir como capas sacrificiales para la fabricación de estructuras suspendidas de GaN con baja tensión residual o como capas para mejorar la funcionalización superficial de sensores químicos o biológicos. El proceso de inducción de poros se discutirá y también se presentarán experimentos de ataque y funcionalización. En segundo lugar, se han determinado las propiedades mecánicas del NCD y de los materiales III-N. Se han fabricado varias estructuras suspendidas para la medición del módulo de Young y de la tensión residual. Además, las estructuras de NCD se midieron en resonancia para calcular el rendimiento de los dispositivos en términos de frecuencia y factor de calidad. Se identificaron los factores intrínsecos y extrínsecos que limitan ambas figuras de mérito y se han desarrollado modelos para considerar estas imperfecciones en las etapas de diseño de los dispositivos. Por otra parte, los materiales III-N normalmente presentan grandes gradientes de deformación residual que causan la deformación de las estructuras al ser liberadas. Se han medido y modelado estos efectos para los tres materiales binarios del sistema para proporcionar puntos de interpolación que permitan predecir las características de las aleaciones del sistema III-N. Por último, los datos recabados se han usado para desarrollar modelos analíticos y numéricos para el diseño de varios dispositivos. Se han estudiado las propiedades de transducción y se proporcionan topologías optimizadas. En el último capítulo de esta disertación se presentan diseños optimizados de los siguientes dispositivos: _ Traviesas y voladizos de AlN=NCD con actuación piezoeléctrica aplicados a nanoconmutadores de RF para señales de alta potencia. _ Membranas circulares de AlN=NCD con actuación piezoeléctrica aplicadas a lentes sintonizables. _ Filtros ópticos Fabry-Pérot basados en cavidades aéreas y membranas de GaN actuadas electrostáticamente. En resumen, se han desarrollado unos nuevos procedimientos optimizados para la fabricación de estructuras de NCD y materiales III-N. Estas técnicas se han usado para producir estructuras que llevaron a la determinación de las principales propiedades mecánicas y de los parámetros de los dispositivos necesarios para el diseño de MEMS. Finalmente, los datos obtenidos se han usado para el diseño optimizado de varios dispositivos demostradores. ABSTRACT Micro Electro Mechanical Systems (MEMS) have proven to be a successful family of devices that can be used as a platform for the development of devices with applications in optics, communications, signal processing and sensorics. Standard MEMS devices are usually fabricated using silicon based materials. However, the performance of these MEMS can be improved if other material systems are used. For instance, nanocrystalline diamond (NCD) offers excellent mechanical properties, optical transparency and ease of surface functionalization. On the other hand, the (In; Ga; Al)N material system, the III-N materials, can be used to produce single crystal structures with high mechanical and chemical sensitivity. Also, AlN can be deposited by reactive sputtering on various substrates, including NCD, to form oriented polycrystalline layers with high piezoelectric response. In addition, both NCD and III-N materials exhibit high thermal and chemical stability, which makes these material the perfect choice for the development of devices for high temperatures, harsh environments and even biocompatible applications. In this thesis these materials have been used for the design and measurement of technological demonstrators. Three main objectives have been pursued: _ Development of suitable fabrication processes. _ Measurement of the material mechanical properties and device performance limiting factors. _ Use the gathered data to design complex demonstrator devices. In a first part of the thesis several fabrication processes have been addressed. The stability of these materials hinders the etching of the layers and hampers the production of free standing structures. The first chapters of this dissertation are devoted to the development of a dry patterning etching process and to sacrificial etching optimization of several proposed substrates. The results of the etching processes are presented and the optimization of the technique for the manufacturing of NCD and III-N free standing structures is described. In a later chapter, sputtering growth of thin AlN layers is studied. As calculated in this dissertation, for efficient MEMS piezoelectric actuation the AlN layers have to be very thin, typically d < 200 nm, which poses serious difficulties to the production of c-axis oriented material with piezoelectric response. The deposition conditions have been mapped in order to identify the boundaries that give rise to the growth of c-axis oriented material from the first deposition stages. Additionally, during the etching optimization a procedure for fabricating nanoporous GaN layers was also studied. Such porous layers can serve as a sacrificial layer for the release of low stressed GaN devices or as a functionalization enhancement layer for chemical and biological sensors. The pore induction process will be discussed and etching and functionalization trials are presented. Secondly, the mechanical properties of NCD and III-N materials have been determined. Several free standing structures were fabricated for the measurement of the material Young’s modulus and residual stress. In addition, NCD structures were measured under resonance in order to calculate the device performance in terms of frequency and quality factor. Intrinsic and extrinsic limiting factors for both figures were identified and models have been developed in order to take into account these imperfections in the device design stages. On the other hand, III-N materials usually present large strain gradients that lead to device deformation after release. These effects have been measured and modeled for the three binary materials of the system in order to provide the interpolation points for predicting the behavior of the III-N alloys. Finally, the gathered data has been used for developing analytic and numeric models for the design of various devices. The transduction properties are studied and optimized topologies are provided. Optimized design of the following devices is presented at the last chapter of this dissertation: _ AlN=NCD piezoelectrically actuated beams applied to RF nanoswitches for large power signals. _ AlN=NCD piezoelectrically actuated circular membranes applied to tunable lenses. _ GaN based air gap tunable optical Fabry-Pérot filters with electrostatic actuation. On the whole, new optimized fabrication processes has been developed for the fabrication of NCD and III-N MEMS structures. These processing techniques was used to produce structures that led to the determination of the main mechanical properties and device parameters needed for MEMS design. Lastly, the gathered data was used for the design of various optimized demonstrator devices.

Contribution to the analysis and design of reflectarray antennas for reconfigurable beam applications at frequencies above 100 GHz using liquid crystal technology

El trabajo contenido en esta tesis doctoral está encuadrado en el desarrollo de antenas reconfigurables electrónicamente capaces de proporcionar prestaciones competitivas a las aplicaciones cada vez más comunes que operan a frecuencias superiores a 60 GHz. En concreto, esta tesis se centra en el estudio, diseño, e implementación de las antenas reflectarray, a las que se introduce la tecnología de cristal líquido como elemento característico con el que se consigue reconfigurabilidad de haz de forma electrónica. Desde un punto de vista muy general, se puede describir un cristal líquido como un material cuya permitividad eléctrica es variable y controlada por una excitación externa, que generalmente suele corresponderse con un campo eléctrico quasi-estático (AC). Las antenas reflectarray de cristal líquido se han escogido como objeto de estudio por varias razones. La primera de ellas tiene que ver con las ventajas que los reflectarrays, y en especial aquellos realizados en configuración planar, proporcionan con respecto a otras antenas de alta ganancia como los reflectores o los “phased-arrays”. En los reflectarrays, la alimentación a través de una fuente primaria común (característica de reflectores) y el elevado número de grados de libertad de las celdas que los componen (característica de arrays) hacen que estas antenas puedan proporcionar prestaciones eléctricas iguales o mejores que las anteriores, a un coste más reducido y con estructuras de antena más compactas. La segunda razón radica en la flexibilidad que ofrece el cristal líquido a ser confinado y polarizado en recintos de geometría variada, como consecuencia de su fluidez (propiedad de los líquidos). Por ello, la tecnología de cristal líquido permite que el propio elemento reconfigurable en las celdas de reflectarray se adapte a la configuración planar de manera que en sí mismo, el cristal líquido sea una o varias de las capas características de esta configuración. Esto simplifica de forma drástica la estructura y la fabricación de este tipo de antenas, incluso si se comparan con reflectarrays reconfigurables basados en otras tecnologías como diodos, MEMS, etc. Por tanto, su coste y desarrollo es muy reducido, lo que hace que se puedan fabricar reflectarrays reconfigurables eléctricamente grandes, a bajo coste, y en producción elevada. Un ejemplo claro de una estructura similar, y que ha tenido éxito comercial, son las pantallas de cristal líquido. La tercera razón reside en el hecho de que el cristal líquido es, hasta la fecha, de las pocas tecnologías capaces de ofrecer reconfigurabilidad del haz a frecuencias superiores a 60 GHz. De hecho, el cristal líquido permite reconfigurabilidad en un amplio margen de frecuencias, que va desde DC a frecuencias del espectro visible, incluyendo las microondas y los THz. Otras tecnologías, como los materiales ferroeléctricos, el grafeno o la tecnología CMOS “on chip” permiten también conmutar el haz en estas frecuencias. Sin embargo, la tecnología CMOS tiene un elevado coste y actualmente está limitada a frecuencias inferiores a 150 GHz, y aunque los materiales ferroeléctricos o el grafeno puedan conmutar a frecuencias más altas y en un rango más amplio, tienen serias dificultades que los hacen aún inmaduros. En el caso de los materiales ferroeléctricos, los elevados voltajes para conmutar el material los hacen poco atractivos, mientras que en el caso del grafeno, su modelado aún está en discusión, y todavía no se han arrojado resultados experimentales que validen su idoneidad. Estas tres razones hacen que los reflectarrays basados en cristal líquido sean atractivos para multitud de aplicaciones de haz reconfigurable a frecuencias superiores a 60 GHz. Aplicaciones como radar de escaneo de imágenes de alta resolución, espectroscopia molecular, radiómetros para observación atmosférica, o comunicaciones inalámbricas de alta frecuencia (WiGig) son algunas de ellas. La tesis está estructurada en tres partes. En la primera de ellas se describen las características más comunes de los cristales líquidos, centrándonos en detalle en aquellas propiedades ofrecidas por este material en fase nemática. En concreto, se estudiará la anisotropía dieléctrica (Ae) de los cristales líquidos uniaxiales, que son los que se emplean en esta tesis, definida como la diferencia entre la permitividad paralela (£//) y la perpendicular (e±): Ae = e,, - e±. También se estudiará la variación de este parámetro (Ae) con la frecuencia, y el modelado electromagnético macroscópico más general que, extraído a partir de aquella, permite describir el cristal líquido para cada tensión de polarización en celdas de geometría planar. Este modelo es de suma importancia para garantizar precisión en el desfasaje proporcionado por las diferentes celdas reconfigurables para reflectarrays que se describirán en la siguiente parte de la tesis. La segunda parte de la tesis se centra en el diseño de celdas reflectarray resonantes basadas en cristal líquido. La razón por la que se escogen estos tipos de celdas reside en el hecho de que son las únicas capaces de proporcionar rangos de fase elevados ante la reducida anisotropía dieléctrica que ofrecen los cristales líquidos. El objetivo de esta parte trata, por tanto, de obtener estructuras de celdas reflectarray que sean capaces de proporcionar buenas prestaciones eléctricas a nivel de antena, mejorando sustancialmente las prestaciones de las celdas reportadas en el estado del arte, así como de desarrollar una herramienta de diseño general para aquellas. Para ello, se estudian las prestaciones eléctricas de diferentes tipos de elementos resonantes de cristal líquido que van, desde el más sencillo, que ha limitado el estado de la técnica hasta el desarrollo de esta tesis y que está formado por un sólo resonador, a elementos que constan de varios resonadores (multi-resonantes) y que pueden ser monocapa o multicapa. En un primer paso, el procedimiento de diseño de estas estructuras hace uso de un modelo convencional de cristal líquido que ha venido siendo usado en el estado del arte para este tipo de celdas, y que considera el cristal líquido como un material homogéneo e isótropo cuya permitividad varía entre (e/7) y (e±). Sin embargo, en esta parte de la tesis se demuestra que dicho modelado no es suficiente para describir de forma genérica el comportamiento del cristal líquido en las celdas tipo reflectarray. En la tesis se proponen procedimientos más exactos para el análisis y diseño basados en un modelo más general que define el cristal líquido como un material anisótropo e inhomogeneo en tres dimensiones, y se ha implementado una técnica que permite optimizar celdas multi-resonantes de forma eficiente para conseguir elevadas prestaciones en cuanto a ancho de banda, rango de fase, pérdidas, o sensibilidad al ángulo de incidencia. Los errores cometidos en el uso del modelado convencional a nivel de celda (amplitud y fase) se han analizado para varias geometrías, usando medidas de varios prototipos de antena que usan un cristal líquido real a frecuencias superiores a 100 GHz. Las medidas se han realizado en entorno periódico mediante un banco cuasi-óptico, que ha sido diseñado especialmente para este fin. Uno de estos prototipos se ha optimizado a 100 GHz para conseguir un ancho de banda relativamente elevado (10%), pérdidas reducidas, un rango de fase mayor de 360º, baja sensibilidad al ángulo de incidencia, y baja influencia de la inhomogeneidad transversal del cristal líquido en la celda. Estas prestaciones a nivel de celda superan de forma clara aquellas conseguidas por otros elementos que se han reportado en la literatura, de manera que dicho prototipo se ha usado en la última parte de la tesis para realizar diversas antenas de barrido. Finalmente, en esta parte se presenta una estrategia de caracterización de la anisotropía macroscópica a partir de medidas de los elementos de reflectarray diseñados en banco cuasi-óptico, obteniendo resultados tanto en las frecuencias de interés en RF como en AC, y comparándolas con aquellas obtenidas mediante otros métodos. La tercera parte de la tesis consiste en el estudio, diseño, fabricación y medida de antenas reconfigurables basadas en cristal líquido en configuraciones complejas. En reflectarrays pasivos, el procedimiento de diseño de la antena se limita únicamente al ajuste en cada celda de la antena de las dimensiones de las metalizaciones que se emplean para el control de fase, mediante procesos de optimización bien conocidos. Sin embargo, en el caso de reflectarrays reconfigurables basados en cristal líquido, resulta necesario un paso adicional, que consiste en calcular de forma adecuada las tensiones de control en cada celda del reflectarray para configurar la fase requerida en cada una de ellas, así como diseñar la estructura y los circuitos de control que permitan direccionar a cada elemento su tensión correspondiente. La síntesis de tensiones es por tanto igual o más importante que el diseño de la geometría de las celdas, puesto que éstas son las que están directamente relacionadas con la fase. En el estado del arte, existen varias estrategias de síntesis de tensiones que se basan en la caracterización experimental de la curva de fase respecto al voltaje. Sin embargo, esta caracterización sólo puede hacerse a un solo ángulo de incidencia y para unas determinadas dimensiones de celda, lo que produce que las tensiones sintetizadas sean diferentes de las adecuadas, y en definitiva que se alcancen errores de fase mayores de 70º. De esta forma, hasta la fecha, las prestaciones a nivel de antena que se han conseguido son reducidas en cuanto a ancho de banda, rango de escaneo o nivel de lóbulos secundarios. En esta última parte de la tesis, se introduce una nueva estrategia de síntesis de tensiones que es capaz de predecir mediante simulaciones, y con alta precisión, las tensiones que deben introducirse en cada celda teniendo en cuenta su ángulo de incidencia, sus dimensiones, la frecuencia, así como la señal de polarización definida por su frecuencia y forma de onda AC. Esta estrategia se basa en modelar cada uno de los estados de permitividad del cristal líquido como un sustrato anisótropo con inhomogeneidad longitudinal (1D), o en ciertos casos, como un tensor equivalente homogéneo. La precisión de ambos modelos electromagnéticos también se discute. Con el objetivo de obtener una herramienta eficiente de cálculo de tensiones, también se ha escrito e implementado una herramienta de análisis basada en el Método de los Momentos en el Dominio Espectral (SD-MoM) para sustratos estratificados anisótropos, que se usa en cada iteración del procedimiento de síntesis para analizar cada una de las celdas de la antena. La síntesis de tensiones se ha diseñado además para reducir al máximo el efecto del rizado de amplitud en el diagrama de radiación, que es característico en los reflectarrays que están formados por celdas con pérdidas elevadas, lo que en sí, supone un avance adicional para la obtención de mejores prestaciones de antena. Para el cálculo de los diagramas de radiación empleados en el procedimiento de síntesis, se asume un análisis elemento a elemento considerando periodicidad local, y se propone el uso de un método capaz de modelar el campo incidente de forma que se elimine la limitación de la periodicidad local en la excitación. Una vez definida la estrategia adecuada de cálculo de las tensiones a aplicar al cristal líquido en cada celda, la estructura de direccionamiento de las mismas en la antena, y diseñados los circuitos de control, se diseñan, fabrican y miden dos prototipos diferentes de antena de barrido electrónico a 100 GHz usando las celdas anteriormente presentadas. El primero de estos prototipos es un reflectarray en configuración “single offset” con capacidad de escaneo en un plano (elevación o azimut). Aunque previamente se realizan diseños de antenas de barrido en 2D a varias frecuencias en el rango de milimétricas y sub-milimétricas, y se proponen ciertas estrategias de direccionamiento que permiten conseguir este objetivo, se desarrolla el prototipo con direccionamiento en una dimensión con el fin de reducir el número de controles y posibles errores de fabricación, y así también validar la herramienta de diseño. Para un tamaño medio de apertura (con un numero de filas y columnas entre 30 y 50 elementos, lo que significa un reflectarray con un número de elementos superior a 900), la configuración “single offset” proporciona rangos de escaneo elevados, y ganancias que pueden oscilar entre los 20 y 30 dBi. En concreto, el prototipo medido proporciona un haz de barrido en un rango angular de 55º, en el que el nivel de lóbulos secundarios (SLL) permanece mejor de -13 dB en un ancho de banda de un 8%. La ganancia máxima es de 19.4 dBi. Estas prestaciones superan de forma clara aquellas conseguidas por otros autores. El segundo prototipo se corresponde con una antena de doble reflector que usa el reflectarray de cristal líquido como sub-reflector para escanear el haz en un plano (elevación o azimut). El objetivo básico de esta geometría es obtener mayores ganancias que en el reflectarray “single offset” con una estructura más compacta, aunque a expensas de reducir el rango de barrido. En concreto, se obtiene una ganancia máxima de 35 dBi, y un rango de barrido de 12º. Los procedimientos de síntesis de tensiones y de diseño de las estructuras de las celdas forman, en su conjunto, una herramienta completa de diseño precisa y eficiente de antenas reflectarray reconfigurables basados en cristales líquidos. Dicha herramienta se ha validado mediante el diseño, la fabricación y la medida de los prototipos anteriormente citados a 100 GHz, que consiguen algo nunca alcanzado anteriormente en la investigación de este tipo de antenas: unas prestaciones competitivas y una predicción excelente de los resultados. El procedimiento es general, y por tanto se puede usar a cualquier frecuencia en la que el cristal líquido ofrezca anisotropía dieléctrica, incluidos los THz. Los prototipos desarrollados en esta tesis doctoral suponen también unas de las primeras antenas de barrido real a frecuencias superiores a 100 GHz. En concreto, la antena de doble reflector para escaneo de haz es la primera antena reconfigurable electrónicamente a frecuencias superiores a 60 GHz que superan los 25 dBi de ganancia, siendo a su vez la primera antena de doble reflector que contiene un reflectarray reconfigurable como sub-reflector. Finalmente, se proponen ciertas mejoras que aún deben se deben realizar para hacer que estas antenas puedan ser un producto completamente desarrollado y competitivo en el mercado. ABSTRACT The work presented in this thesis is focused on the development of electronically reconfigurable antennas that are able to provide competitive electrical performance to the increasingly common applications operating at frequencies above 60 GHz. Specifically, this thesis presents the study, design, and implementation of reflectarray antennas, which incorporate liquid crystal (LC) materials to scan or reconfigure the beam electronically. From a general point of view, a liquid crystal can be defined as a material whose dielectric permittivity is variable and can be controlled with an external excitation, which usually corresponds with a quasi-static electric field (AC). By changing the dielectric permittivity at each cell that makes up the reflectarray, the phase shift on the aperture is controlled, so that a prescribed radiation pattern can be configured. Liquid Crystal-based reflectarrays have been chosen for several reasons. The first has to do with the advantages provided by the reflectarray antenna with respect to other high gain antennas, such as reflectors or phased arrays. The RF feeding in reflectarrays is achieved by using a common primary source (as in reflectors). This arrangement and the large number of degrees of freedom provided by the cells that make up the reflectarray (as in arrays), allow these antennas to provide a similar or even better electrical performance than other low profile antennas (reflectors and arrays), but assuming a more reduced cost and compactness. The second reason is the flexibility of the liquid crystal to be confined in an arbitrary geometry due to its fluidity (property of liquids). Therefore, the liquid crystal is able to adapt to a planar geometry so that it is one or more of the typical layers of this configuration. This simplifies drastically both the structure and manufacture of this type of antenna, even when compared with reconfigurable reflectarrays based on other technologies, such as diodes MEMS, etc. Therefore, the cost of developing this type of antenna is very small, which means that electrically large reconfigurable reflectarrays could be manufactured assuming low cost and greater productions. A paradigmatic example of a similar structure is the liquid crystal panel, which has already been commercialized successfully. The third reason lies in the fact that, at present, the liquid crystal is one of the few technologies capable of providing switching capabilities at frequencies above 60 GHz. In fact, the liquid crystal allows its permittivity to be switched in a wide range of frequencies, which are from DC to the visible spectrum, including microwaves and THz. Other technologies, such as ferroelectric materials, graphene or CMOS "on chip" technology also allow the beam to be switched at these frequencies. However, CMOS technology is expensive and is currently limited to frequencies below 150 GHz, and although ferroelectric materials or graphene can switch at higher frequencies and in a wider range, they have serious difficulties that make them immature. Ferroelectric materials involve the use of very high voltages to switch the material, making them unattractive, whereas the electromagnetic modelling of the graphene is still under discussion, so that the experimental results of devices based on this latter technology have not been reported yet. These three reasons make LC-based reflectarrays attractive for many applications that involve the use of electronically reconfigurable beams at frequencies beyond 60 GHz. Applications such as high resolution imaging radars, molecular spectroscopy, radiometers for atmospheric observation, or high frequency wireless communications (WiGig) are just some of them. This thesis is divided into three parts. In the first part, the most common properties of the liquid crystal materials are described, especially those exhibited in the nematic phase. The study is focused on the dielectric anisotropy (Ac) of uniaxial liquid crystals, which is defined as the difference between the parallel (e/7) and perpendicular (e±) permittivities: Ae = e,, - e±. This parameter allows the permittivity of a LC confined in an arbitrary volume at a certain biasing voltage to be described by solving a variational problem that involves both the electrostatic and elastic energies. Thus, the frequency dependence of (Ae) is also described and characterised. Note that an appropriate LC modelling is quite important to ensure enough accuracy in the phase shift provided by each cell that makes up the reflectarray, and therefore to achieve a good electrical performance at the antenna level. The second part of the thesis is focused on the design of resonant reflectarray cells based on liquid crystal. The reason why resonant cells have been chosen lies in the fact that they are able to provide enough phase range using the values of the dielectric anisotropy of the liquid crystals, which are typically small. Thus, the aim of this part is to investigate several reflectarray cell architectures capable of providing good electrical performance at the antenna level, which significantly improve the electrical performance of the cells reported in the literature. Similarly, another of the objectives is to develop a general tool to design these cells. To fulfill these objectives, the electrical yields of different types of resonant reflectarray elements are investigated, beginning from the simplest, which is made up of a single resonator and limits the state of the art. To overcome the electrical limitations of the single resonant cell, several elements consisting of multiple resonators are considered, which can be single-layer or multilayer. In a first step, the design procedure of these structures makes use of a conventional electromagnetic model which has been used in the literature, which considers that the liquid crystal behaves as homogeneous and isotropic materials whose permittivity varies between (e/7) y (e±). However, in this part of the thesis it is shown that the conventional modelling is not enough to describe the physical behaviour of the liquid crystal in reflectarray cells accurately. Therefore, a more accurate analysis and design procedure based on a more general model is proposed and developed, which defines the liquid crystal as an anisotropic three-dimensional inhomogeneous material. The design procedure is able to optimize multi-resonant cells efficiently to achieve good electrical performance in terms of bandwidth, phase range, losses, or sensitivity to the angle of incidence. The errors made when the conventional modelling (amplitude and phase) is considered have been also analysed for various cell geometries, by using measured results from several antenna prototypes made up of real liquid crystals at frequencies above 100 GHz. The measurements have been performed in a periodic environment using a quasi-optical bench, which has been designed especially for this purpose. One of these prototypes has been optimized to achieve a relatively large bandwidth (10%) at 100 GHz, low losses, a phase range of more than 360º, a low sensitivity to angle of incidence, and a low influence of the transversal inhomogeneity of the liquid crystal in the cell. The electrical yields of this prototype at the cell level improve those achieved by other elements reported in the literature, so that this prototype has been used in the last part of the thesis to perform several complete antennas for beam scanning applications. Finally, in this second part of the thesis, a novel strategy to characterise the macroscopic anisotropy using reflectarray cells is presented. The results in both RF and AC frequencies are compared with those obtained by other methods. The third part of the thesis consists on the study, design, manufacture and testing of LCbased reflectarray antennas in complex configurations. Note that the design procedure of a passive reflectarray antenna just consists on finding out the dimensions of the metallisations of each cell (which are used for phase control), using well-known optimization processes. However, in the case of reconfigurable reflectarrays based on liquid crystals, an additional step must be taken into account, which consists of accurately calculating the control voltages to be applied to each cell to configure the required phase-shift distribution on the surface of the antenna. Similarly, the structure to address the voltages at each cell and the control circuitry must be also considered. Therefore, the voltage synthesis is even more important than the design of the cell geometries (dimensions), since the voltages are directly related to the phase-shift. Several voltage synthesis procedures have been proposed in the state of the art, which are based on the experimental characterization of the phase/voltage curve. However, this characterization can be only carried out at a single angle of incidence and at certain cell dimensions, so that the synthesized voltages are different from those needed, thus giving rise to phase errors of more than 70°. Thus, the electrical yields of the LCreflectarrays reported in the literature are limited in terms of bandwidth, scanning range or side lobes level. In this last part of the thesis, a new voltage synthesis procedure has been defined and developed, which allows the required voltage to be calculated at each cell using simulations that take into account the particular dimensions of the cells, their angles of incidence, the frequency, and the AC biasing signal (frequency and waveform). The strategy is based on the modelling of each one of the permittivity states of the liquid crystal as an anisotropic substrate with longitudinal inhomogeneity (1D), or in certain cases, as an equivalent homogeneous tensor. The accuracy of both electromagnetic models is also discussed. The phase errors made by using the proposed voltage synthesis are better than 7º. In order to obtain an efficient tool to analyse and design the reflectarray, an electromagnetic analysis tool based on the Method of Moments in the spectral domain (SD-MoM) has also written and developed for anisotropic stratified media, which is used at each iteration of the voltage synthesis procedure. The voltage synthesis is also designed to minimize the effect of amplitude ripple on the radiation pattern, which is typical of reflectarrays made up of cells exhibiting high losses and represents a further advance in achieving a better antenna performance. To calculate the radiation patterns used in the synthesis procedure, an element-by-element analysis is assumed, which considers the local periodicity approach. Under this consideration, the use of a novel method is proposed, which avoids the limitation that the local periodicity imposes on the excitation. Once the appropriate strategy to calculate the voltages to be applied at each cell is developed, and once it is designed and manufactured both the structure to address the voltages to the antenna and the control circuits, two complete LC-based reflectarray antennas that operate at 100 GHz have been designed, manufactured and tested using the previously presented cells. The first prototype consists of a single offset reflectarray with beam scanning capabilities on one plane (elevation and azimuth). Although several LC-reflectarray antennas that provide 2-D scanning capabilities are also designed, and certain strategies to achieve the 2-D addressing of the voltage are proposed, the manufactured prototype addresses the voltages in one dimension in order to reduce the number of controls and manufacturing errors, and thereby validating the design tool. For an average aperture size (with a number of rows and columns of between 30 and 50 elements, which means a reflectarray with more than 900 cells), the single offset configuration provides an antenna gain of between 20 and 30 dBi and a large scanning range. The prototype tested at 100 GHz exhibits an electronically scanned beam in an angular range of 55º and 8% of bandwidth, in which the side lobe level (SLL) remains better than -13 dB. The maximum gain is 19.4 dBi. The electrical performance of the antenna is clearly an improvement on those achieved by other authors in the state of the art. The second prototype corresponds to a dual reflector antenna with a liquid crystal-based reflectarray used as a sub-reflector for beam scanning in one plane (azimuth or elevation). The main objective is to obtain a higher gain than that provided by the single offset configuration, but using a more compact architecture. In this case, a maximum gain of 35 dBi is achieved, although at the expense of reducing the scanning range to 12°, which is inherent in this type of structure. As a general statement, the voltage synthesis and the design procedure of the cells, jointly make up a complete, accurate and efficient design tool of reconfigurable reflectarray antennas based on liquid crystals. The tool has been validated by testing the previously mentioned prototypes at 100 GHz, which achieve something never reached before for this type of antenna: a competitive electrical performance, and an excellent prediction of the results. The design procedure is general and therefore can be used at any frequency for which the liquid crystal exhibits dielectric anisotropy. The two prototypes designed, manufactured and tested in this thesis are also some of the first antennas that currently operate at frequencies above 100 GHz. In fact, the dual reflector antenna is the first electronically scanned dual reflector antenna at frequencies above 60 GHz (the operation frequency is 100 GHz) with a gain greater than 25 dBi, being in turn the first dual-reflector antenna with a real reconfigurable sub-reflectarray. Finally, some improvements that should be still investigated to make these antennas commercially competitive are proposed.

Noise and PSRR improvement technique for TPC readout front-end in CMOS. technology.

ALICE is one of four major experiments of particle accelerator LHC installed in the European laboratory CERN. The management committee of the LHC accelerator has just approved a program update for this experiment. Among the upgrades planned for the coming years of the ALICE experiment is to improve the resolution and tracking efficiency maintaining the excellent particles identification ability, and to increase the read-out event rate to 100 KHz. In order to achieve this, it is necessary to update the Time Projection Chamber detector (TPC) and Muon tracking (MCH) detector modifying the read-out electronics, which is not suitable for this migration. To overcome this limitation the design, fabrication and experimental test of new ASIC named SAMPA has been proposed . This ASIC will support both positive and negative polarities, with 32 channels per chip and continuous data readout with smaller power consumption than the previous versions. This work aims to design, fabrication and experimental test of a readout front-end in 130nm CMOS technology with configurable polarity (positive/negative), peaking time and sensitivity. The new SAMPA ASIC can be used in both chambers (TPC and MCH). The proposed front-end is composed of a Charge Sensitive Amplifier (CSA) and a Semi-Gaussian shaper. In order to obtain an ASIC integrating 32 channels per chip, the design of the proposed front-end requires small area and low power consumption, but at the same time requires low noise. In this sense, a new Noise and PSRR (Power Supply Rejection Ratio) improvement technique for the CSA design without power and area impact is proposed in this work. The analysis and equations of the proposed circuit are presented which were verified by electrical simulations and experimental test of a produced chip with 5 channels of the designed front-end. The measured equivalent noise charge was <550e for 30mV/fC of sensitivity at a input capacitance of 18.5pF. The total core area of the front-end was 2300?m × 150?m, and the measured total power consumption was 9.1mW per channel.

Feasibility of Soil Vapor Extraction Systems in Low Permeability Soils

Soil vapor extraction (SVE)systems can be used to remediate enviornmental sites that have been contaminated with petroleum products. However, SVE systems rely on pore space in soils to draw the vapors through the soil, creating a vacuum. Therefore, SVE systems are not as effective when used in low permeability soils. This study aims to determine whether SVE systems can be used on low permeability soils in conjunction with companion technologies. The results indicate that SVE systems can be utilized in low permeability soils if used in conjunction with companion technologies that increase soil permeability and cantaminant volatilization. The promising companion technology is six-phase soil heating, based on contamination removal rate and cost estimates.

Stabilisation of low softening point petroleum pitch fibres by iodine treatment

A method using iodine has been developed for the stabilisation of low softening point (SP) pitch fibres that avoids air stabilisation in the production of carbon fibres (CF). The interaction between iodine and petroleum pitches has been studied by following the changes in the hydrogen content, aromatic or aliphatic, during the heat treatment of iodine-treated pitch fibres. Two low SP petroleum pitches were used and the iodine-treated pitch fibres were analysed by TGA, DSC, DRIFT, XPS and SEM. The results confirm that using this novel method pitches with low SP can be used to prepare CF with two advantages, compared with conventional methods. The stabilisation time is considerably reduced and treatments to increase the SP, usually required when low SP pitches are used to prepare CF, can be avoided.

A new low magnetic field magnetar: the 2011 outburst of Swift J1822.3–1606

We report on the long-term X-ray monitoring with Swift, RXTE, Suzaku, Chandra, and XMM-Newton of the outburst of the newly discovered magnetar Swift J1822.3–1606 (SGR 1822–1606), from the first observations soon after the detection of the short X-ray bursts which led to its discovery, through the first stages of its outburst decay (covering the time span from 2011 July until the end of 2012 April). We also report on archival ROSAT observations which detected the source during its likely quiescent state, and on upper limits on Swift J1822.3–1606's radio-pulsed and optical emission during outburst, with the Green Bank Telescope and the Gran Telescopio Canarias, respectively. Our X-ray timing analysis finds the source rotating with a period of P = 8.43772016(2) s and a period derivative P = 8.3(2)×10−14 s s−1, which implies an inferred dipolar surface magnetic field of B sime 2.7 × 1013 G at the equator. This measurement makes Swift J1822.3–1606 the second lowest magnetic field magnetar (after SGR 0418+5729). Following the flux and spectral evolution from the beginning of the outburst, we find that the flux decreased by about an order of magnitude, with a subtle softening of the spectrum, both typical of the outburst decay of magnetars. By modeling the secular thermal evolution of Swift J1822.3–1606, we find that the observed timing properties of the source, as well as its quiescent X-ray luminosity, can be reproduced if it was born with a poloidal and crustal toroidal fields of Bp ~ 1.5 × 1014 G and B tor ~ 7 × 1014 G, respectively, and if its current age is ~550 kyr.

A Survey on FPGA-Based Sensor Systems: Towards Intelligent and Reconfigurable Low-Power Sensors for Computer Vision, Control and Signal Processing

The current trend in the evolution of sensor systems seeks ways to provide more accuracy and resolution, while at the same time decreasing the size and power consumption. The use of Field Programmable Gate Arrays (FPGAs) provides specific reprogrammable hardware technology that can be properly exploited to obtain a reconfigurable sensor system. This adaptation capability enables the implementation of complex applications using the partial reconfigurability at a very low-power consumption. For highly demanding tasks FPGAs have been favored due to the high efficiency provided by their architectural flexibility (parallelism, on-chip memory, etc.), reconfigurability and superb performance in the development of algorithms. FPGAs have improved the performance of sensor systems and have triggered a clear increase in their use in new fields of application. A new generation of smarter, reconfigurable and lower power consumption sensors is being developed in Spain based on FPGAs. In this paper, a review of these developments is presented, describing as well the FPGA technologies employed by the different research groups and providing an overview of future research within this field.

Refinery Nonconventional Feedstocks: Influence of the Coprocessing of Vacuum Gas Oil and Low Density Polyethylene in Fluid Catalytic Cracking Unit on Full Range Gasoline Composition

Gasoline coming from refinery fluid catalytic cracking (FCC) unit is a major contributor to the total commercial grade gasoline pool. The contents of the FCC gasoline are primarily paraffins, naphthenes, olefins, aromatics, and undesirables such as sulfur and sulfur containing compounds in low quantities. The proportions of these components in the FCC gasoline invariable determine its quality as well as the performance of the associated downstream units. The increasing demand for cleaner and lighter fuels significantly influences the need not only for novel processing technologies but also for alternative refinery and petrochemical feedstocks. Current and future clean gasoline requirements include increased isoparaffins contents, reduced olefin contents, reduced aromatics, reduced benzene, and reduced sulfur contents. The present study is aimed at investigating the effect of processing an unconventional refinery feedstock, composed of blend of vacuum gas oil (VGO) and low density polyethylene (LDPE) on FCC full range gasoline yields and compositional spectrum including its paraffins, isoparaffins, olefins, napthenes, and aromatics contents distribution within a range of operating variables of temperature (500–700 °C) and catalyst-feed oil ratio (CFR 5–10) using spent equilibrium FCC Y-zeolite based catalyst in a FCC pilot plant operated at the University of Alicante’s Research Institute of Chemical Process Engineering (RICPE). The coprocessing of the oil-polymer blend led to the production of gasoline with very similar yields and compositions as those obtained from the base oil, albeit, in some cases, the contribution of the feed polymer content as well as the processing variables on the gasoline compositional spectrum were appreciated. Carbon content analysis showed a higher fraction of the C9–C12 compounds at all catalyst rates employed and for both feedstocks. The gasoline’s paraffinicity, olefinicity, and degrees of branching of the paraffins and olefins were also affected in various degrees by the scale of operating severity. In the majority of the cases, the gasoline aromatics tended toward the decrease as the reactor temperature was increased. While the paraffins and iso-paraffins gasoline contents were relatively stable at around 5 % wt, the olefin contents on the other hand generally increased with increase in the FCC reactor temperature.

Pilot study of hyperopic LASIK using the solid-state laser technology

Background To evaluate and report the visual, refractive, and aberrometric outcomes of LASIK for the correction of low to moderate hyperopia in a pilot group using a commercially available solid-state laser. Methods Prospective pilot study including 11 consecutive eyes with low to moderate hyperopia of six patients undergoing LASIK surgery using the Pulzar Z1 solid-state laser (CustomVis Laser Pty Ltd., currently CV Laser). Visual, refractive, and aberrometric changes were evaluated. Potential complications were evaluated as well. Mean follow-up time was 6.6 months (range, 3 to 11 months). Results A significant improvement in LogMAR uncorrected distance visual acuity (UDVA) was observed postoperatively (p = 0.01). No significant change was detected in LogMAR corrected distance visual acuity (CDVA) (p = 0.21). Postoperative LogMAR UDVA was 0.1 (about 20/25) or better in ten eyes (90.9 %). Mean overall efficacy and safety indices were 1.03 and 1.12. Postoperatively, no losses of lines of CDVA were observed. Postoperative spherical equivalent was within ±1.00 D in ten eyes (90.9 %). With regard to aberrations, no statistically significant changes were found in higher order and primary coma RMS postoperatively (p ≥ 0.21), and only minimal but statistically significant negativization of primary spherical aberration (p = 0.02) was observed. No severe complications were observed. Conclusion LASIK surgery using the solid-state laser technology seems to be a useful procedure for the correction of low to moderate hyperopia, with minimal induction of higher order aberrations.

Total oxidation of naphthalene at low temperatures using palladium nanoparticles supported on inorganic oxide-coated cordierite honeycomb monoliths

A study on the preparation of thin films of ZSM-5 and BETA zeolites, and a SAPO-5 silicoaluminophosphate, supported on cordierite honeycomb monoliths by in situ synthesis was carried out for their use as catalyst supports. Furthermore γ-Al2O3 was also coated onto a cordierite honeycomb monolith by a dip-coating method for use as a standard support. Structured monolithic catalysts were prepared by impregnation of the aforementioned coated monoliths with polymer-protected Pd nanoparticles. The monolithic catalysts have been tested for the total oxidation of naphthalene (100 ppm, GHSV 1220 h−1). From the combined use of the zeolite with polymer-protected nanoparticles, enhanced catalytic properties have been found for the total abatement of naphthalene. The Pd/MBETA and Pd/MZSM-5 catalytic monoliths have shown excellent activity with a high degree of stability, even after undergoing accelerated ageing experiments.

Conversion of low density polyethylene into fuel through co-processing with vacuum gas oil in a fluid catalytic cracking riser reactor

In this work, mixtures of vacuum gas oil and low density polyethylene, a major component of common industrial and consumer household plastics, were pyrolytically co-processed in a fluid catalytic cracking (FCC) riser reactor as a viable alternative for the energy and petrochemical revalorisation of plastic wastes into valuable petrochemical feedstocks and fuel within an existing industrial technology. Using equilibrium FCC catalyst, the oil–polymer blends were catalytically cracked at different processing conditions of temperatures between 773 K and 973 K and catalyst feed ratios of 5:1, 7:1 and 10:1. The influence of each of these processing parameters on the cracking gas and liquid yield patterns were studied and presented. Further analysed and presented are the different compositional distributions of the obtained liquids and gaseous products. The analysis of the results obtained revealed that with very little modifications to existing process superstructure, yields and compositional distributions of products from the fluid catalytic cracking of the oil–polymer blend in many cases were very similar to those of the processed oil feedstock, bringing to manifest the viability of the feedstock co-processing without significant detriments to FCC product yields and quality.

The Opportunity Costs of STEM Degrees and the Unmet Needs of the Low-Skilled: Two labour market problems explained. CEPS Policy Brief No. 295, 26 June 2013

There is general consensus that to achieve employment growth, especially for vulnerable groups, it is not sufficient to simply kick-start economic growth: skills among both the high- and low-skilled population need to be improved. In particular, we argue that if the lack of graduates in science, technology, engineering and mathematics (STEM) is a true problem, it needs to be tackled via incentives and not simply via public campaigns: students are not enrolling in ‘hard-science’ subjects because the opportunity cost is very high. As far as the low-skilled population is concerned, we encourage EU and national policy-makers to invest in a more comprehensive view of this phenomenon. The ‘low-skilled’ label can hide a number of different scenarios: labour market detachment, migration, and obsolete skills that are the result of macroeconomic structural changes. For this reason lifelong learning is necessary to keep up with new technology and to shield workers from the risk of skills obsolescence and detachment from the labour market.