Highly efficient and stable organic light-emitting diodes employing MoO3-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride as hole injection layer

We report highly efficient and stable organic light-emitting diodes (OLEDs) with MoO3-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride (PTCDA) as hole injection layer (HIL). A green OLED with structure of ITO/20 wt% MoO3: PTCDA/NPB/Alq(3)/LiF/Al shows a long lifetime of 1012 h at the initial luminance of 2000 cd/m(2), which is 1.3 times more stable than that of the device with MoO3 as HIL. The current efficiency of 4.7 cd/A and power efficiency of 3.7 lm/W at about 100 cd/m(2) have been obtained. The charge transfer complex between PTCDA and MoO3 plays a decisive role in improving the performance of OLEDs.

Broadband external cavity tunable quantum dot lasers with low injection current density

Broadband grating-coupled external cavity laser, based on InAs/GaAs quantum dots, is achieved. The device has a wavelength tuning range from 1141.6 nm to 1251.7 nm under a low continuous-wave injection current density (458 A/cm(2)). The tunable bandwidth covers consecutively the light emissions from both the ground state and the 1st excited state of quantum dots. The effects of cavity length and antireflection facet coating on device performance are studied. It is shown that antireflection facet coating expands the tuning bandwidth up to similar to 150 nm, accompanied by an evident increase in threshold current density, which is attributed to the reduced interaction between the light field and the quantum dots in the active region of the device.

Experimental Investigation on Propane Hydrate Dissociation by High Concentration Methanol and Ethylene Glycol Solution Injection

The dissociation behaviors of propane hydrate by high concentration alcohols inhibitors injection were investigated. Methanol (30.0, 60.1, 80.2, and 99.5 wt %) and ethylene glycol (30.0, 60.1, 69.8, 80.2, and 99.5 wt %) solution were injected, respectively, as alcohols inhibitors in 3.5 L transparent reactor. It is shown that the average dissociation rates of propane hydrate injecting methanol and ethylene glycol solution are 0.02059-0.04535 and 0.0302-0.0606 mol.min(-1).L-1, respectively. The average dissociation rates increase with the mass concentration increase of alcohols solution, and it is the biggest when 99.5 wt % ethylene glycol solution was injected. The presence of alcohols accelerates gas hydrate dissociation and reduces the total need of external energy to dissociate the hydrates. Density differences act as driving force, causing the acceleration effects of ethylene glycol on dissociation behaviors of propane hydrate are better than that of methanol with the same injecting flux and mass concentration.

Electron injection assisted phase transition in a nano-Au-VO2 junction

The semiconductor-metal transition of vanadium dioxide (VO2) thin films epitaxially grown on C-plane sapphire is studied by depositing Au nanoparticles onto the thermochromic films forming a metal-semiconductor contact, namely, a nano-Au-VO2 junction. It reveals that Au nanoparticles have a marked effect on the reduction in the phase transition temperature of VO2. A process of electron injection in which electrons flow from Au to VO2 due to the lower work function of the metal is believed to be the mechanism. The result may support the Mott-Hubbard phase transition model for VO2.

Experimental investigation of production behavior of methane hydrate under ethylene glycol injection in unconsolidated sediment

This article investigates the gas production behavior from methane hydrate (MH) in porous sediment by injecting ethylene glycol (EG) solution with the different concentrations and the different injection rates in an one-dimensional experimental apparatus. The results suggest that the gas production process can be divided into the four stages: (1) the initial injection, (2) the EG diluteness, (3) the hydrate dissociation, and (4) the remained gas output. Nevertheless, the water production rate keeps nearly constant during the whole production process. The production efficiency is affected by both the EG concentration and the EG injection rate, and it reaches a maximum with the EG concentration of 60 wt %.

Broadly tunable SOA-based active mode-locked fibre ring laser by forward injection optical pulse

We present a broadly tunable active mode- locked. bre ring laser based on a semiconductor optical ampli. er ( SOA), with forward injection optical pulses. The laser can generate pulse sequence with pulsewidth about 12 ps and high output power up to 8.56dBm at 2.5 GHz stably. Incorporated with a wavelength- tunable optical bandpass. lter, the pulse laser can operate with a broad wavelength tunable span up to 37nm with almost constant pulsewidth. A detailed experimental analysis is also carried out to investigate the relationship between the power of the internal cavity and the pulsewidth of the output pulse sequence. The experimental con. guration of the pulse laser is very simple and easy to setup with no polarization- sensitive components.

Harmonic Millimeter Wave Generation and Frequency Up-Conversion Using Optical Injection Locking and Brillouin Selective Sideband Amplification

Harmonic millimeter wave (mm-wave) generation and frequency up-conversion are experimentally demonstrated using optical injection locking and Brillouin selective sideband amplification (BSSA) induced by stimulated Brillouin scattering in a 10-km single-mode fiber. By using this method, we successfully generate third-harmonic mm-wave at 27 GHz (f(LO) - 9 GHz) with single sideband (SSB) modulation and up-convert the 2GHz intermediate frequency signal into the mm-wave band with single mode modulation of the SSB modes. In addition, the mm-wave carrier obtains more than 23 dB power gain due to the BSSA. The transmission experiments show that the generated mm-wave and up-converted signals indicate strong immunity against the chromatic dispersion of the fibers.

Fabrication of Silicon-Based Template-Assisted Nanoelectrode Arrays and Ohmic Contact Properties Investigation

A convenient fabrication technology for large-area, highly-ordered nanoelectrode arrays on silicon substrate has been described here, using porous anodic alumina (PAA) as a template. The ultrathin PAA membranes were anodic oxidized utilizing a two-step anodization method, from Al film evaporated on substrate. The purposes for the use of two-step anodization were, first, improving the regularity of the porous structures, and second reducing the thickness of the membranes to 100 similar to 200 nm we desired. Then the nanoelectrode arrays were obtained by electroless depositing Ni-W alloy into the through pores of PAA membranes, making the alloy isolated by the insulating pore walls and contacting with the silicon substrates at the bottoms of pores. The Ni-W alloy was also electroless deposited at the back surface of silicon to form back electrode. Then ohmic contact properties between silicon and Ni-W alloy were investigated after rapid thermal annealing. Scanning electron microscopy (SEM) observations showed the structure characteristics, and the influence factors of fabrication effect were discussed. The current voltage (I-V) curves revealed the contact properties. After annealing in N-2 at 700 degrees C, good linear property was shown with contact resistance of 33 Omega, which confirmed ohmic contacts between silicon and electrodes. These results presented significant application potential of this technology in nanosize current-injection devices in optoelectronics, microelectronics and bio-medical fields.

INDIUM OHMIC CONTACTS TO N-ZNSE

The reaction between an indium over layer and high purity MBE grown n-ZnSe chlorine doped (2x 10(18) cm-3) epilayers has been investigated using X-ray diffraction, Rutherford backscattering spectroscopy, X-ray photoelectron and Auger electron spectroscopy, and by electrical function tests (I-V and C-V). Good ohmic contacts were formed after annealing at 250 or 300-degrees-C for a few minutes in forming gas. Annealing at lower or higher temperatures resulted in higher resistance or rectifying contacts. The data show that no compounds were formed at the interface; instead In appeared to diffuse into the ZnSe. High surface doping densities appear to allow an ohmic contact, but the electrical data suggest that compensation effects are also very significant in the formation of the contact. These effects must be considered for successful formation of the ohmic contact.

Microstructure studies of PdGe/Ge ohmic contacts to n-type GaAs formed by rapid thermal annealing

A low resistance and shallow ohmic contact to n-GaAs is performed by using Ge/Pd/GaAs trilayer structure and rapid thermal annealing process. The dependence of specific contact resistivity on the temperature of rapid thermal annealing is investigated. A good ohmic contact is formed after annealing at 400-500 degrees C for 60 s. The best specific contact resistivity is 1.4 x 10(-6) Omega cm(2). Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS) and scanning electron microscopy (SEM) are used to analyze the interfacial microstructure. A strong correlation between the contact resistance and the film microstructure is observed.

A new structure of In-based ohmic contacts to n-type GaAs

Electrical, structural and reaction characteristics of In-based ohmic contacts to n-GaAs were studied. Attempts were made to form a low-band-gap interfacial phase of InGaAs to reduce the barrier height at the metal/semiconductor junction, thus yielding low-resistance, highly reliable contacts. The contacts were fabricated by e-beam sputtering Ni, NiIn and Ge targets on VPE-grown n(+)-GaAs film (approximate to 1 mu m, 2 x 10(18) cm(-3)) in ultrahigh vacuum as the structure of Ni(200 Angstrom)/NiIn(100 Angstrom)/Ge(40 Angstrom)/n(+)-GaAs/SI-GaAs, followed by rapid thermal annealing at various temperatures (500-900 degrees C). In this structure, a very thin layer of Ge was employed to play the role of heavily doping donors and diffusion limiters between In and the GaAs substrate. Indium was deposited by sputtering NiIn alloy instead of pure In in order to ensure In atoms to be distributed uniformly in the substrate; nickel was chosen to consume the excess indium and form a high-temperature alloy of Ni3In. The lowest specific contact resistivity (rho(c)) of (1.5 +/- 0.5)x 10(-6) cm(2) measured by the Transmission Line Method (TLM) was obtained after annealing at 700 degrees C for 10 s. Auger sputtering depth profile and Transmission Electron Microscopy (TEM) were used to analyze the interfacial microstructure. By correlating the interfacial microstructure to the electronical properties, InxGa1-xAs phases with a large fractional area grown epitaxially on GaAs were found to be essential for reduction of the contact resistance.