988 resultados para GALLIUM
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Spherical silicon solar cells are expected to serve as a technology to reduce silicon usage of photovoltaic (PV) power systems[1, 2, 3]. In order to establish the spherical silicon solar cell, a manufacturing method of uniformly sized silicon particles of 1mm in diameter is required. However, it is difficult to mass-produce the mono-sized silicon particles at low cost by existent processes now. We proposed a new method to generate liquid metal droplets uniformly by applying electromagnetic pinch force to a liquid metal jet[4]. The electromagnetic force was intermittently applied to the liquid metal jet issued from a nozzle in order to fluctuate the surface of the jet. As the fluctuation grew, the liquid jet was broken up into small droplets according to a frequency of the intermittent electromagnetic force. Firstly, a preliminary experiment was carried out. A single pulse current was applied instantaneously to a single turn coil around a molten gallium jet. It was confirmed that the jet could be split up by pinch force generated by the current. And then, electromagnetic pinch force was applied intermittently to the jet. It was found that the jet was broken up into mono-sized droplets in the case of a force frequency was equal to a critical frequency[5], which corresponds to a natural disturbance wave length of the jet. Numerical simulations of the droplet generation from the liquid jet were then carried out, which consisted of an electromagnetic analysis and a fluid flow calculation with a free surface of the jet. The simulation results were compared with the experiments and the agreement between the two was quite good.
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We present a novel method for creating damage-free ferroelectric nanostructures with a focused ion beam milling machine. Using a standard e-beam photoresist followed by a dilute acid wash, nanostructures ranging in size from 1 mu m down to 250 nm were created in a 90 nm thick lead zirconate titanate ( PZT) wafer. Transmission electron microscopy and piezoresponse force microscopy ( PFM) confirmed that the surfaces of the nanostructures remained damage free during fabrication, and showed no gallium implantation, and that there was no degradation of ferroelectric properties. In fact DC strain loops, obtained using PFM, demonstrated that the nanostructures have a higher piezoresponse than unmilled films. As the samples did not have any top hard mask, the method presented is unique as it allows for imaging of the top surface to understand edge effects in well-defined nanostructures. In addition, as no post-mill annealing was necessary, it facilitates investigation of nanoscale domain mechanisms without process-induced artefacts.
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The focused ion beam microscope (FIB) has been used to fabricate thin parallel-sided ferroelectric capacitors from single crystals of BaTiO3 and SrTiO3. A series of nano-sized capacitors ranging in thickness from similar to660 nm to similar to300 nm were made. Cross-sectional high resolution transmission electron microscopy (HRTEM) revealed that during capacitor fabrication, the FIB rendered around 20 nm of dielectric at the electrode-dielectric interface amorphous, associated with local gallium impregnation. Such a region would act electrically in series with the single crystal and would presumably have a considerable negative influence on the dielectric properties. However, thermal annealing prior to gold electrodes deposition was found to fully recover the single crystal capacitors and homogenise the gallium profile. The dielectric testing of the STO ultra-thin single crystal capacitors was performed yielding a room temperature dielectric constant of similar to300, as is the case in bulk. Therefore, there was no evidence of a collapse in dielectric constant associated with thin film dimensions.
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The field of surface polariton physics really took off with the prism coupling techniques developed by Kretschmann and Raether, and by Otto. This article reports on the construction and operation of a rotatable, in vacuo, variable temperature, Otto coupler with a coupling gap that can be varied by remote control. The specific design attributes of the system offer additional advantages to those of standard Otto systems of (i) temperature variation (ambient to 85 K), and (ii) the use of a valuable, additional reference point, namely the gap-independent reflectance at the Brewster angle at any given, fixed temperature. The instrument is placed firmly in a historical context of developments in the field. The efficacy of the coupler is demonstrated by sample attenuated total reflectance results on films of platinum, niobium, and yttrium barium copper oxide and on aluminum/gallium arsenide (Al/GaAs) Schottky diode structures. (C) 2000 American Institute of Physics. [S0034-6748(00)02411-4].
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A rectangular waveguide-to-microstrip transition operating at G-band is presented. The E-plane probe, used in the transition, is fabricated on semi-insulating gallium arsenide (SI-GaAs) and it is elevated on the substrate. This configuration reduces interaction with semiconductor material. The elevated probe is suitable for direct integration with monolithic microwave integrated circuits. Measured results show S11 better than 210dB between 150 and 200 GHz and S21 ¼ 2 4dB at centre band (180GHz) for two transitions in back-to-back configuration.
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The Gutmann Acceptor Number (AN), which is a quantitative measure of Lewis acidity, has been estimated using the P-31 NMR chemical shift of a probe molecule, triethylphosphine oxide, for a range of chlorometallate(III) ionic liquids, based on Group 13 metals (aluminium(III), gallium(III) and indium(III)) and the 1-octyl-3-methylimidazolium cation, at different compositions. The results were interpreted in terms of extant speciation studies of chlorometallate(III) ionic liquids, and compared with a range of standard molecular solvents and acids. The value of these data were illustrated in terms of the selection of appropriate ionic liquids for specific applications.
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Green oil, which leads to the deactivation of the catalysts used for the selective hydrogenation of acetylene, has long been observed but its formation mechanism is not fully understood. In this work, the formation of 1,3-butadiene, known to be the precursor of green oil, on both Pd(111) and Pd(211) surfaces is examined using density functional theory calculations. The pathways containing C-2 + C-2 coupling reactions as well as the corresponding hydrogenation reactions are studied in detail. Three pathways for 1,3-butadiene production, namely coupling plus hydrogenation and further hydrogenation, hydrogenation plus coupling plus hydrogenation, and a two step hydrogenation followed by coupling, are determined. By comparing the effective barriers, we identify the favored pathway on both surfaces. A general understanding toward the deactivation process of the industrial catalysts is also provided. In addition, the effects of the formation of subsurface carbon atoms as well as the Ag alloying on the 1,3-butadiene formation on Pd-based catalysts are also investigated and compared with experimental results.
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The selective hydrogenation of acetylene to ethylene on several Pd surfaces (Pd(111), Pd(100), Pd(211), and Pd(211)-defect) and Pd surfaces with subsurface species (carbon and hydrogen) as well as a number of Pd-based alloys (Pd-M/Pd(111) and Pd-M/Pd(211) (M = Cu, Ag and Au)) are investigated using density functional theory calculations to understand both the acetylene hydrogenation activity and the selectivity of ethylene formation. All the hydrogenation barriers are calculated, and the reaction rates on these surfaces are obtained using a two-step model. Pd(211) is found to have the highest activity for acetylene hydrogenation while Pd(100) gives rise to the lowest activity. In addition, more open surfaces result in over-hydrogenation to form ethane, while the close-packed surface (Pd(111)) is the most selective. However, we also find that the presence of subsurface carbon and hydrogen significantly changes the reactivity and selectivity of acetylene toward hydrogenation on Pd surfaces. On forming surface alloys of Pd with Cu, Ag and Au, the selectivity for ethylene is also found to be changed. A new energy decomposition method is used to quantitatively analyze the factors in determining the changes in selectivity. These surface modifiers are found to block low coordination unselective sites, leading to a decreased ethane production. (C) 2013 The Authors. Published by Elsevier Inc. All rights reserved.
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Boron-modified Pd catalysts have shown excellent performance for the selective hydrogenation of alkynes experimentally. In the current work, we investigated the hydrogenation of acetylene on boron-modified Pd(111) and Pd(211) surfaces, utilizing density functional theory calculations. The activity of acetylene hydrogenation has been studied by estimating the effective barrier of the whole process. The selectivity of ethylene formation is investigated from a comparison between the desorption and the hydrogenation of ethylene as well as comparison between the ethylene and the 1,3-butadiene formation. Formation of subsurface carbon and hydrogen on both boron-modified Pd(111) and Pd(211) surfaces has also been evaluated, since these have been reported to affect both the activity and the selectivity of acetylene hydrogenation to produce ethylene on Pd surfaces. Our results provide some important insights into the Pd B catalysts for selective hydrogenation of acetylene and also for more complex hydrogenation systems, such as stereoselective hydrogenation of longer chain alkynes and selective hydrogenation of vegetable oil.
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O trabalho de investigação apresentado nesta dissertação foi desenvolvido tendo como objectivo a síntese e funcionalização de meso-triarilcorróis para utilização como quimiossensores. Este trabalho encontra-se apresentado ao longo de cinco capítulos. No primeiro capítulo são apresentadas as características gerais, as metodologias de síntese e de funcionalização de macrociclos de tipo corrólico, e descrevemse algumas aplicações em que têm sido utilizados. São ainda abordadas algumas das propriedades e características dos quimiossensores e os mecanismos de deteção de diversos analítos. No segundo capítulo, após uma pequena introdução às reações de Wittig e de Diels-Alder, escolhidas para a funcionalização do macrociclo corrólico, descreve-se o estudo efectuado para a obtenção do complexo de gálio(III) do 3- vinil-5,10,15-tris(pentafluorofenil)corrol e o seu comportamento como dieno, em reações de Diels-Alder na presença dos dienófilos 1,4-benzoquinona e 1,4- naftoquinona. Desses estudos resultaram dois aductos cuja habilidade sensorial, bem como a dos seus precursores, foi estudada, em solução, na presença de aniões esféricos (F-, Br-, Cl-), lineares (CN-) e volumosos (CH3COO-, H2PO4 -). Dos macrociclos estudados verificou-se que o corrol base-livre 5,10,15-tris(pentafluorofenil)corrol apresenta uma elevada sensibilidade para o anião fluoreto (F-), e que a coordenação do núcleo corrólico com gálio(III) diminui a afinidade para este anião. Em geral, todos os compostos mostraram afinidade para o anião cianeto (CN-) mesmo quando em suportes poliméricos. O gel de poliacrilamida revelou-se muito promissor na determinação de CN- em amostras de água. No terceiro capítulo é avaliada a reatividade do complexo de gálio(III) do 3- vinil-5,10,15-tris(pentafluorofenil)corrol ainda como dieno mas agora na presença de um dienófilo linear, o acetilenodicarboxilato de dimetilo. Desse estudo resultaram dois novos derivados corrólicos. A habilidade sensorial dos mesmos perante os aniões fluoreto, cianeto, acetato, e fosfato foi avaliada por espectroscopia de absorção e emissão tendo um dos aductos mostrado ser colorimétrico para o anião cianeto. No quarto capítulo descreve-se a síntese e caracterização de dois conjugados do tipo corrol-cumarina, resultantes de reações de Hetero-Diels-Alder entre o 3-vinil-5,10,15-tris(pentafluorofenil)corrolatogálio(III)(piridina) e orto-quinonasmetídeos gerados in situ a partir de reacções de Knoevenagel entre cumarinas e paraformaldeído. Realizaram-se estudos de afinidade sensorial para aniões e catiões com estes macrociclos, bem como com conjugados porfirinacumarina análogos. A inserção de uma unidade cumarina conferiu uma excepcional solubilidade tendo os novos derivados apresentado solubilidade em etanol. No quinto e último capítulo desta dissertação é avaliada a capacidade sensorial do 5,10,15-tris(pentafluorofenil)corrol e da sua espécie monoaniónica, para os catiões metálicos Na+, Ca2+, Cu2+, Cd2+, Pb2+, Hg2+, Ag+, Al3+, Zn2+, Ni2+, Cr3+, Ga3+, Fe3+ em tolueno e acetonitrilo. Os macrociclos corrólicos mostraram ser selectivos e colorimétricos para o catião Hg2+. Neste trabalho descreve-se ainda a síntese do derivado -iminocorrol, que após funcionalização com o 3-isocianatopropiltrimetoxisilano originou um derivado do tipo alcoxisilano, que foi, posteriormente, ancorado a nanopartículas comerciais de sílica. As novas nanopartículas ancoradas com o alcoxisilano corrol foram estudadas na presença de Cu2+, Hg2+ e Ag+. Na presença do catião Ag+ assistiu-se a uma mudança de cor, de verde para amarelo.
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Tese de doutoramento, Farmácia (Biotecnologia Farmacêutica), Universidade de Lisboa, Faculdade de Farmácia, 2014
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In this work parameters of Mg-doped GaN samples were studied using positron annihilation spectroscopy and analyzed. It is shown that gallium vacancies exist in an unintentionally doped sample. Next, the sample with higher concentration of Mg and low growth temperature contains vacancy clusters. In case of low concentration of Mg the growth temperature does not affect the formation of defects. Analog electronics can be replaced by a modern digital device. While promising a high quantity of benefits, the performance of these digitizers requires thorough adjustment. A 14-bit two channel digitizer has been tested in order to achieve better performance than the one of a traditional analog setup, and the adjustment process is described. It has been shown that the digital device is unable to achieve better energy resolution, but it is quite close to the corresponding attribute of the available analog system, which had been used for measurements in Mg-doped GaN.
Resumo:
Wenn sich in einem wichtigen Bereich der Elektrotechnik ein neues Halbleitermaterial zu etablieren beginnt, weckt dies einerseits Erwartungen der Wirtschaft und Industrie, andererseits kann es eine erhebliche Herausforderung für die Hersteller bedeuten. Nachdem Gallium-Nitrid erstmalig vor 20 Jahren als Transistor verwendet wurde und seit über einer Dekade serienmäßig in der Hochfrequenztechnik eingesetzt wird, erobert es nun die Leistungselektronik. Die ausschlaggebenden Kriterien sind hier die Verwendbarkeit bei höheren Betriebstemperaturen, die Energieeffizienz und die Reduzierung von Größe und Gewicht durch den Betrieb bei höheren Schaltfrequenzen. Die vorliegende Arbeit basiert auf der Motivation zunächst einen möglichst breit angelegten Überblick des ständig wachsenden Angebotsspektrums zu geben, das mittlerweile durch die vielfältigen Varianten der verfügbaren Transistoren an Übersichtlichkeit etwas verloren hat. Nach einer ausführlichen Erläuterung der physikalischen und elektrischen Eigenschaften, werden die jeweiligen Typen in überschaubaren Abschnitten beschrieben und im Anschluss tabellarisch zusammengefasst. Die elektrischen Eigenschaften der hier ausgewählten EPC 2010 eGaN-HFETs (200 V Spannungsklasse) werden eingehend diskutiert. Das Schaltverhalten der eGaN-HFETs in einem Synchron-Tiefsetzsteller wird untersucht und modelliert. Eine Analyse aller in den GaN-FETs entstehenden Verlustleistungen wird durchgeführt. Zur Abschätzung der dynamischen Verlustleistungen wird eine analytische Methode umgesetzt und weiter entwickelt. Um die Vorteile der erhöhten Schaltfrequenzen nutzen zu können, erfolgt eine sehr ausführliche Betrachtung der notwendigen magnetischen Komponenten, deren Auswahl- und Verwendungskriterien im Detail untersucht, evaluiert und aufgegliedert werden. Diese werden im praktischen Teil ausgiebig in Verbindung mit den GaN-Transistoren ausgesucht und messtechnisch bewertet. Theoretische Betrachtungen hinsichtlich der Grenzen, die magnetische Bauelemente schnell schaltenden Halbleitern auferlegen, werden durchgeführt. Da die untersuchten Niedervolt-GaN-HFETs quasi kein Gehäuse haben, ist eine korrekte Strommessung nicht realisierbar. Am praktischen Beispiel eines Synchron-Tiefsetzstellers werden zwei experimentelle Methoden entwickelt, mit deren Hilfe die Verlustleistungen in den EPC 2010 eGaN-HFETs ermittelt werden. Anschließend wird das Verbesserungspotential der GaN-Leistungstransistoren erläutert sowie deren Anwendungsbereiche diskutiert.
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Uniformly distributed ZnO nanorods with diameter 70-100 nm and 1-2μm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and the growth parameters are controlled by reactant concentration, temperature and pH. No catalyst is required. The XRD studies show that the ZnO nanorods are single crystals and that they grow along the c axis of the crystal plane. The room temperature photoluminescence measurements have shown ultraviolet peaks at 388nm with high intensity, which are comparable to those found in high quality ZnO films. The mechanism of the nanorod growth in the aqueous solution is proposed. The dependence of the ZnO nanorods on the growth parameters was also investigated. While changing the growth temperature from 60°C to 150°C, the morphology of the ZnO nanorods changed from sharp tip (needle shape) to flat tip (rod shape). These kinds of structure are useful in laser and field emission application.