Effects of In surfactant on the crystalline and photoluminescence properties of GaN nanowiires

GaN nanowires have been grown with and without In as an additional source. The effects of In surfactant on the crystal quality and photoluminescence property of GaN nanowires are reported for the first time. X-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, energy-dispersive x-ray spectroscopy, and photoluminescence measurements are employed to analyse the products. The results show that introducing a certain amount of In surfactant during the growth process can improve the crystal quality of the GaN nanowires, and enhance the photolurainescence of them. In addition, the as-prepared GaN nanowires have the advantage of being easy to be separated, which will benefit the subsequent nanodevice fabrication.

Synthesis of GaN nanowires and nano-pyramids in a two-hot-boat chemical vapor deposition system via an in-doping technique

A two-hot-boat chemical vapor deposition system was modified from a thermal evaporation equipment. This system has the advantage of high vacuum, rapid heating rate and temperature separately controlled boats for the source and samples. These are in favor of synthesizing compound semiconducting nano-materials. By the system, we have synthesized high-quality wurtzite single crystal GaN nanowires and nanotip triangle pyramids via an in-situ doping indium surfactant technique on Si and 3C-SiC epilayer/Si substrates. The products were analyzed by x-ray diffraction, field emission scanning electron microscopy, highresolution transmission electron microscopy, energy- dispersive x-ray spectroscopy, and photoluminescence measurements. The GaN nanotip triangle pyramids, synthesized with this novel method, have potential application in electronic/ photonic devices for field-emission and laser.

Optical properties of highly ordered AlN nanowire arrays grown on sapphire substrate

Highly ordered AlN nanowire arrays were synthesized via a simple physical vapor deposition method on sapphire substrate. The nanowires have an extremely sharp tip < 10 nm, with the average length around 3 mu m. Raman spectroscopy analysis on the AlN nanowire arrays revealed that the lifetime of the phonons is shorter than that in bulk AlN. The transmission spectra of the AlN nanowires showed a blueshift similar to 0.27 eV at the absorption edge with that of the bulk AlN, which is closely related to the small size of the nanowires. (c) 2005 American Institute of Physics.

Synthesis of GaN nanotip triangle pyramids on 3C-SiC epilayer/Si substrates via an in situ In-doping technique

GaN nanotip triangle pyramids were synthesized on 3C-SiC epilayer via an isoelectronic In-doping technique. The synthesis was carried out in a specially designed two-hot-boat chemical vapor deposition system. In (99.999%) and molten Ga (99.99%) with a mass ratio of about 1:4 were used as the source, and pieces of Si (111) wafer covered with 400-500 nm 3C-SiC epilayer were used as the substrates. The products were analyzed by x-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, selected area electron diffraction, Raman spectroscopy, and photoluminescence measurements. Our results show that the as-synthesized GaN pyramids are perfect single crystal with wurtzite structure, which may have potential applications in electronic/photonic devices.

Mode analysis and Q-factor enhancement due to mode coupling in rectangular resonators

Modes in rectangular resonators are analyzed and classified according to symmetry properties, and quality factor (Q-factor) enhancement due to mode coupling is observed. In the analysis, mode numbers p and q are used to denote the number of wave nodes in the direction of two orthogonal sides. The even and odd mode numbers correspond to symmetric and antisymmetric field distribution relative to the midlines of sides, respectively. Thus, the modes in a rectangle resonator can be divided into four classes according to the parity of p and q. Mode coupling between modes of different classes is forbidden; however, anti-crossing mode coupling between the modes in the same class exists and results in new modes due to the combination of the coupled modes. One of the combined modes has very low power loss and high Q-factor based on far-field emission of the analytical field distribution, which agrees well with the numerical results of the finite-difference time-domain (FDTD) simulation. Both the analytical and FDTD results show that the Q-factors of the high Q-factor combined modes are over one order larger than those of the original modes. Furthermore, the general condition required to achieve high-Q modes in the rectangular resonator is given based on the analytical solution.

Effect of substrate temperature on the growth and photoluminescence properties of vertically aligned ZnO nanostructures

Vertically well-aligned ZnO nanoridge, nanorod, nanorod-nanowall junction, and nanotip arrays have been successfully synthesized on Si (100) substrates using a pulsed laser deposition prepared ZnO film as seed layer by thermal evaporation method. Experimental results illustrated that the growth of different morphologies of ZnO nanostructures was strongly dependent upon substrate temperature. X-ray diffraction (XRD) and transmission electron microscopy (TEM) studies showed that the ZnO nanostructures were single crystals with a wurtzite structure. Compared with those of the other nanostructures, the photoluminescence (PL) spectrum of nanorod-nanowall junctions showed the largest intensity ratio of ultraviolet (UV) to yellow-green emission and the smallest full-width at half-maximum (FWHM) of the UV peak, reflecting the high optical quality and nearly defect free of crystal structure. The vertical alignment of the nanowire array on the substrate is attributed to the epitaxial growth of the nanostructures from the ZnO buffer layer. The growth mechanism was also discussed in detail. (c) 2006 Elsevier B.V. All rights reserved.

Mode characteristics for equilateral triangle optical resonators

Mode characteristics of equilateral triangle resonators (ETRs) are analyzed based on the symmetry operation of the point group C-3v. The results show that doubly degenerate eigenstates can be reduced to the A(1) and A(2) representations of C-3v, if the longitudinal mode number is a multiple of 6; otherwise, they form the E irreducible representation Of C-3v. And the one-period length for the mode light ray is half of the perimeter of the ETR. Mode Q-factors are calculated by the finite-difference time-domain (FDTD) technique and compared with those calculated from far-field emission based on the analytical near-field pattern for TE and TM modes. The results show that the far-field emission based on the analytical field distribution can be used to estimate the mode Q-factor, especially for TM modes. FDTD numerical results also show that Q-factor of TE modes reaches maximum value as the longitudinal mode number is a multiple of 7. In addition, photoluminescence spectra and measured Q-factors are presented for fabricated ETR with side lengths of 20 and 30 mu m, and the mode wavelength intervals are compared with the analytical results.

Magnetism and photoluminescence in manganese-gallium oxide nanowires with monoclinic and spinel structures

Manganese-gallium oxide nanowires were synthesized via in situ Mn doping during nanowire growth using a vapor phase evaporation method. The microstructure and composition of the products were characterized via transmission electron microscopy (TEM), field emission scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy. The field and temperature dependence of the magnetization reveal the obvious hysteresis loop and large magnitude of Curie-Weiss temperature. The photoluminescence of the manganese-gallium oxide nanowires were studied in a temperature range between 10 and 300 K. A broad green emission band was observed which is attributed to the T-4(1)-(6)A(1) transition in Mn2+ (3d(5)) ions. (c) 2005 Elsevier B.V. All rights reserved.

Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001)

We have grown MnxGe1-x films (x=0, 0.06, 0.1) on Si (001) substrates by magnetron cosputtering, and have explored the resulting structural, morphological, electrical and magnetic properties. X-ray diffraction results show there is no secondary phase except Ge in the Mn0.06Ge0.94 film while new phase appears in the Mn0.1Ge0.9 film. Nanocrystals are formed in the Mn0.06Ge0.94 film, determined by field-emission scanning electron microscopy. Hall measurement indicates that the Mn0.06Ge0.94 film is p-type semiconductor and hole carrier concentration is 6.07 X 10(19) cm(-3) while the MnxGe1-x films with x=0 has n-type carriers. The field dependence of magnetization was measured using alternating gradient magnetometer, and it has been indicated that the Mn0.06Ge0.94 film is ferromagnetic at room temperature. (c) 2005 Elsevier Ltd. All rights reserved.

Study on the reverse characteristics of Ti/6H-SiC Schottky contacts

The reverse I(V) measurement and analytic calculation of the electron transport across a Ti/6H-SiC Schottky barrier are presented. Based on the consideration of the barrier fluctuations and the barrier height shift caused by image charge and the applied voltage drop across Ti/SiC interfical layer, a comprehensive analytical model for the reverse tunneling current is developed using a WKB calculation of the tunneling probability through a reverse biased Schottky barrier. This model takes into account the main reverse conduction mechanism, such as field emission, thermionic field emission and thermionic emission. The fact that the simulated results are in good agreement with the experimental data indicates that the barrier height shift and barrier fluctuation can lead to reverse current densities orders of magnitude higher than that obtained from a simple theory. It is shown that the field and thermionic field emission processes, in which carries can tunnel through the barrier but cannot surmount it with insufficient thermal energy, dominate the reverse characteristics of a SiC Schottky contacts in a normal working condition.

Influence of mode symmetry on quality factors of degenerate states in microlasers with an equilateral triangle resonator

Modes in equilateral triangle resonator (ETR) are analyzed and classified according to the irreducible representations of the point group C-3v., Both the analytical method based on the far field emission and the numerical method by FDTD technique are used to calculate the quality factors (Q-factors) of the doubly degenerate states in ETR. Results obtained from the two methods are in reasonable agreement. Considering the different symmetry properties of the doubly degenerate eigenstates, we also discuss the ETR joined with an output waveguide at one of the vertices by FDTD technique and the Pade approximation. The variation of Q-factors versus width of output waveguide is analyzed. The numerical results show that doubly degenerate eigenstates of TM0.36 and TM0.38 whose wavelengths are around 1.5 mu m in the resonator with side-length of 5 mu m have the Q-factors larger than 1000 when the width of the output waveguide is smaller than 0.4 mu m. When the width of the output waveguide is set to 0.3 mu m, the symmetrical states that are more efficiently coupled to output waveguide have Q-factors about 8000, which are over 3 times larger than those of asymmetric state.

场发射(FED)用荧光粉的研制与改性

场发射平板显示器（Field Emission Displays, FED）是一种新发展起来的平板显示器，由于其在亮度、视角、响应时间、工作温度范围、能耗等方面具有优良的特性，成为近年新型显示器研究的热点之一。为实现高效的FED红、绿、蓝全色显示，荧光粉在其中起着十分重要的作用。制备性能优良的场发射用彩色荧光粉是决定将来FED技术成功与否的关键因素之一。 本论文研究的内容包括场发射(FED)用荧光粉的研制和改性工作。在场发射(FED)用荧光粉研制方面，采用溶胶-凝胶方法，制备了一系列新型场发射(FED)用荧光粉，包括稀土离子激活的镓酸镧 [(LaGaO3: Re3+ (Re = Eu, Tb, Dy, Tm, Sm)]体系、铟酸钙[(CaIn2O4: Re3+ (Re = Eu, Pr, Tb, Dy,)]体系、铟酸锶[(SrIn2O4: Re3+ (Re = Pr, Tb, Dy)]体系、镓酸镥[Lu3Ga5O12:Re3+ (Re = Eu, Tb，Pr)]体系，并研究了Pr, Sm, Eu, Tb, Dy, Tm等稀土离子在这些基质中的光致发光、低压阴极射线发光性质和能量传递等性质。在荧光粉的改性方面，采用喷雾热解法制备了Sr2CeO4球形场发射用荧光粉，研究了喷雾前驱体溶液中，聚乙二醇浓度、金属离子浓度、烧结温度对形貌及发光性能的影响；采用溶胶－凝胶方法成功将SiO2表明包覆一层CaTiO3:Pr3+, Y3Al5O12:Ce3+/Tb3+荧光粉，得到单分散，球形形貌，分布均匀，具有核/壳结构的球形荧光粉；另外研究了不同的制备方法对Ga2O3:Dy3+荧光粉的发光性能的影响。所得样品用XRD、FTIR、SEM、TEM、漫反射光谱、光致发光(PL)光谱、荧光寿命曲线、低压阴极射线(CL)光谱等进行表征。 在紫外光激发下，稀土离子激活的镓酸镧彩色荧光粉有基质(LaGaO3)的发射和稀土离子(Eu3+, Tb3+, Dy3+, Tm3+, Sm3+)的特征发射，研究表明在基质和稀土离子之间存在能量传递，其能量传递效率因离子而异。在阴极射线激发下，样品仅有稀土离子(Eu3+, Tb3+, Dy3+, Tm3+, Sm3+)的特征发射。如：LaGaO3: Eu3+发红光，LaGaO3: Dy3+发白光，LaGaO3: Tm3+发蓝光，LaGaO3: Sm3+发黄光，LaGaO3: Sm3+,Tb3+发白光。LaGaO3: Tb3+的发光颜色可通过不同Tb3+的掺杂浓度从蓝光到绿光进行调控。在相同的激发条件下，所制备的蓝光发射的LaGaO3: Tb3+和LaGaO3: Tm3+荧光粉与商业FED用蓝粉(Y2SiO5: Ce3+，日亚化学工业株式会社，NP-1047)相比具有更好的色纯度和更高的发光效率；所制备的黄光发射的LaGaO3: Sm3+荧光粉与商业低压黄色荧光粉((Zn,Cd)S: Ag，日亚化学工业株式会社，NP-1020)相比，色纯度接近，但具有更高的发光效率。并首次实现了单一基质中白光发射(LaGaO3: Sm3+,Tb3+), 所制备的稀土离子激活的镓酸镧彩色荧光粉[(LaGaO3: Re3+ (Re = Eu, Tb, Dy, Tm, Sm )]在场发射器件有潜在的应用。 在稀土离子掺杂的Sr/CaIn2O4荧光粉体系中，在基质Sr/CaIn2O4和掺杂离子Pr3+/Tb3+/Dy3+存在高效能量传递。基质Sr/CaIn2O4吸收能量向激活离子Pr3+/ Tb3+/Dy3+传递，发射为稀土离子Pr3+/Tb3+/Dy3+的特征发射，发光强度、荧光寿命等符合应用要求，在低压电子束激发下，Sr/CaIn2O4: Pr3+/Tb3+/Dy3+荧光粉为稀土离子的特征发射，其低压阴极射线发光(CL)光谱与光致发光(PL)发射光谱一致，CL强度随激发电压，电流密度增加而增强。 对于CaIn2O4:Eu3+荧光粉，进一步研究表明CaIn2O4:Eu3+荧光粉的光致发光和阴极射线发光颜色可以通过掺杂不同浓度的Eu3+从白光，黄光，到红光进行调控。低浓度掺杂发白光，高浓度掺杂发红光，适当的浓度发黄光。 在Lu3Ga5O12:Re3+ (Re = Eu, Tb，Pr)荧光粉体系中，在紫外（UV）和低压阴极射线激发下，所制备的荧光粉Lu3Ga5O12: Eu3+, Lu3Ga5O12: Pr3+为稀土离子Eu3+, Pr3+的特征发射，分别发黄光和绿光。Lu3Ga5O12:Tb3+的发光颜色因Tb3+掺杂浓度不同而不同，低浓度掺杂发蓝光，高浓度发绿光。 Sr2CeO4荧光粉在UV及低压阴极射线激发下发出强烈蓝光，源于配体到金属离子电荷迁移带跃迁(Ce4+-O2-)。其阴极射线发光强度与电压及灯丝电流呈良好的线性关系。 采用溶胶－凝胶方法的核壳结构的SiO2@CaTiO3:Pr3+和SiO2@Y3Al5O12: Ce3+/Tb3+荧光粉, FESEM和TEM结果表明这种核壳结构的发光材料表面致密，厚度均匀，保持了单分散SiO2微球的形貌特征。在UV及低压阴极射线激发下，SiO2@CaTiO3:Pr3+呈强红色发射，源于Pr3+ 的1D2—3H4 (612 nm)跃迁；SiO2@Y3Al5O12:Ce3+和SiO2@Y3Al5O12:Tb3+ 分别发黄绿光和绿光，源于Ce3+的5d-4f和Tb3+的5D4-7FJ (J = 6, 5, 4, 3)跃迁。PL强度可以通过包覆次数调控，CL强度随激发电压及灯丝电流增加而增强。 在Ga2O3:Dy3+荧光粉体系中，采用了溶胶-凝胶，氨水共沉淀，和高温固相法制备了Ga2O3:Dy3+荧光粉并比较了他们的结晶行为，形貌，光致发光和低压阴极射线发光性能。溶胶-凝胶法制备由于原料在分子层次上混合，可以得到纯相，氨水共沉淀和高温固相法原料不如溶胶凝胶法混合均匀，很难得到纯相。溶胶-凝胶和氨水共沉淀所得荧光粉为纳米级别大小，分别呈球形和玉米棒形状；高温固相法微米级别且呈不规则形状。Ga2O3向Dy3+传递能量效率依次按溶胶-凝胶，氨水共沉淀，和高温固相法逐渐降低。在紫外光激发下，分别发白光，蓝白光，蓝光。其低压阴极射线发光与光致发光类似。相比之下，溶胶-凝胶法制备Ga2O3:Dy3+荧光粉比氨水共沉淀和高温固相法制备要好。

Ferromagnetic MnSb Films Consisting of Nanorods and Nanoleaves

Ferromagnetic MnSb films were synthesized on Si wafers by physical vapor deposition. X-ray diffraction revealed that the films primarily consisted of MnSb alloy. Nanorods and nanoleaves were observed in the MnSb films by field-emission scanning electron microscopy. These nanorods had an average diameter of 20nm and a length of up to hundreds of nanometers. The nanoleaves had a width and thickness of about 100 and 20nm, respectively. Magnetic hysteresis loops were measured by an alternative gradient magnetometer, and the loops showed strong geometrical anisotropy.

Fabrication of nano-sized grains by pulsed laser surface melting

In this work, the formation and characterization of nano-sized grains on the modified surfaces of GCr15 and H13 steels have been investigated. The material was processed by pulsed laser surface melting (LSM) under different depths of de-ionized water. The microstructures and phases of the melted zones were examined by x-ray diffraction, environmental field emission scanning electron microscopy and high resolution transmission electron microscopy. The results indicate that LSM under water can successfully fabricate nano-scaled grains on the surfaces of steel, due to the rapid solidification and crystallization by heterogeneous nucleation. The elemental segregation of chromium and activated heterogeneous nucleation mechanism of austenite in liquid metal play a key role in the formation of nano-sized grains at high cooling rates. This one-step technique provides us a new way to prepare uniform nano-scaled grains, and is of great importance for further understanding the growth of nano-materials under extreme conditions.

改进的SILAR法制备ZnO薄膜及其表征

A modified solution method, successive ionic layer adsorption and reaction(SILAR), was applied to prepare transparent zinc oxide(ZnO) film on glass substrate at (125±5) ℃ in mixed ion precursor solution. The surface morphology and crystallizations of films were analyzed by field emission scanning microscopy(FESEM) and X-ray diffraction(XRD), respectively. The optical properties of the films were studied by ultraviolet visible(UV-Vis)spectroscopy. The results show that the obtained samples are polycrystallin...中文文摘：采用一种改进的液相成膜技术——连续离子层吸附与反应(SILAR)法,用锌氨络离子[Zn(NH3)4]2+溶液作为独立的前驱体溶液,以载玻片为衬底,在(125±5)℃的温度下沉积出致密、透明的ZnO薄膜。分别用冷场发射型扫描电镜(FESEM)和X射线衍射(XRD)分析了薄膜样品的表面形貌和结晶状态,用紫外-可见分光光度计(UV-Vis spectroscopy)研究了薄膜样品的发光性能。结果表明:获得样品为六角纤锌矿结构的多晶薄膜材料沿[002]方向择优生长;样品表面均匀、致密,厚度约为550nm;在可见光波段具有高的透射率(>80%)。