Performance Analysis of TCP Uploads in WLANs with Multiple Rates

Throughput analysis of bulk TCP downloads in cases where all WLAN stations are associated at the same rate with the AP is available in the literature. In this paper,we extend the analysis to TCP uploads for the case of multirate associations. The approach is based on a two-dimensional semi- Markov model for the number of backlogged stations. Analytical results are in excellent agreement with simulations performed using QUALNET 4.5.

A Simulation Based Study and Analysis of Double Gate Tunnel FET Performance for Low Stand-By Power Applications

The conventional metal oxide semiconductor field effect transistor (MOSFET)may not be suitable for future low standby power (LSTP) applications due to its high off-state current as the sub-threshold swing is theoretically limited to 60mV/decade. Tunnel field effect transistor (TFET) based on gate controlled band to band tunneling has attracted attention for such applications due to its extremely small sub-threshold swing (much less than 60mV/decade). This paper takes a simulation approach to gain some insight into its electrostatics and the carrier transport mechanism. Using 2D device simulations, a thorough study and analysis of the electrical parameters of the planar double gate TFET is performed. Due to excellent sub-threshold characteristics and a reverse biased structure, it offers orders of magnitude less leakage current compared to the conventional MOSFET. In this work, it is shown that the device can be scaled down to channel lengths as small as 30 nm without affecting its performance. Also, it is observed that the bulk region of the device plays a major role in determining the sub-threshold characteristics of the device and considerable improvement in performance (in terms of ION/IOFF ratio) can be achieved if the thickness of the device is reduced. An ION/IOFF ratio of 2x1012 and a minimum point sub-threshold swing of 22mV/decade is obtained.

Extrinsic Analog Synthesis using Piecewise Linear Current-Mode Circuits

A methodology is presented for the synthesis of analog circuits using piecewise linear (PWL) approximations. The function to be synthesized is divided into PWL segments such that each segment can be realized using elementary MOS current-mode programmable-gain circuits. A number of these elementary current-mode circuits when connected in parallel, it is possible to realize piecewise linear approximation of any arbitrary analog function with in the allowed approximation error bounds. Simulation results show a close agreement between the desired function and the synthesized output. The number of PWL segments used for approximation and hence the circuit area is determined by the required accuracy and the smoothness of the resulting function.

Synthesis, Characterization, and Electronic Structure of New Type of Heterometallic Boride Clusters

The reaction of [Cp*TaCl(4)], 1 (Cp* = eta(5)-C(5)Me(5)), with [LiBH(4)center dot THF] at -78 degrees C, followed by thermolysis in the presence of excess [BH(3)center dot THF], results in the formation of the oxatantalaborane cluster [(Cp*Ta)(2)B(4)H(10)O], 2 in moderate yield. Compound 2 is a notable example of an oxatantalaborane cluster where oxygen is contiguously bound to both the metal and boron. Upon availability of 2, a room temperature reaction was performed with [Fe(2)(CO)(9)], which led to the isolation of [(Cp*Ta)(2)B(2)H(4)O{H(2)Fe(2)(CO)(6)BH} ] 3. Compound 3 is an unusual heterometallic boride cluster in which the [Ta(2)Fe(2)] atoms define a butterfly framework with one boron atom lying in a semi-interstitial position. Likewise, the diselenamolybdaborane, [(Cp*Mo)(2)B(4)H(4)Se(2)], 4 was treated with an excess of [Fe(2)(CO)(9)] to afford the heterometallic boride cluster [(Cp*MoSe)(2)Fe(6)(CO)(13)B(2)(BH)(2)], 5. The cluster core of 5 consists of a cubane [Mo(2)Se(2)Fe(2)B(2)] and a tricapped trigonal prism [Fe(6)B(3)] fused together with four atoms held in common between the two subclusters. In the tricapped trigonal prism subunit, one of the boron atoms is completely encapsulated and bonded to six iron and two boron atoms. Compounds 2, 3, and 5 have been characterized by mass spectrometry, IR, (1)H, (11)B, (13)C NMR spectroscopy, and the geometric structures were unequivocally established by crystallographic analysis. The density functional theory calculations yielded geometries that are in close agreement with the observed structures. Furthermore, the calculated (11)B NMR chemical shifts also support the structural characterization of the compounds. Natural bond order analysis and Wiberg bond indices are used to gain insight into the bonding patterns of the observed geometries of 2, 3, and 5.

Towards formal verification of analog mixed signal designs using SPICE circuit simulation traces

An extension to a formal verification approach of hybrid systems is proposed to verify analog and mixed signal (AMS) designs. AMS designs can be formally modeled as hybrid systems and therefore lend themselves to the formal analysis and verification techniques applied to hybrid systems. The proposed approach employs simulation traces obtained from an actual design implementation of AMS circuit blocks (for example, in the form of SPICE netlists) to carry out formal analysis and verification. This enables the same platform used for formally validating an abstract model of an AMS design, to be also used for validating its different refinements and design implementation; thereby, providing a simple route to formal verification at different levels of implementation. The feasibility of the proposed approach is demonstrated with a case study based on a tunnel diode oscillator. Since the device characteristic of a tunnel diode is highly non-linear with a negative resistance region, dynamic behavior of circuits in which it is employed as an element is difficult to model, analyze and verify within a general hybrid system formal verification tool. In the case study presented the formal model and the proposed computational techniques have been incorporated into CheckMate, a formal verification tool based on MATLAB and Simulink-Stateflow Framework from MathWorks.

Editorial optical computing circuits, devices and systems

Information forms the basis of modern technology. To meet the ever-increasing demand for information, means have to be devised for a more efficient and better-equipped technology to intelligibly process data. Advances in photonics have made their impact on each of the four key applications in information processing, i.e., acquisition, transmission, storage and processing of information. The inherent advantages of ultrahigh bandwidth, high speed and low-loss transmission has already established fiber-optics as the backbone of communication technology. However, the optics to electronics inter-conversion at the transmitter and receiver ends severely limits both the speed and bit rate of lightwave communication systems. As the trend towards still faster and higher capacity systems continues, it has become increasingly necessary to perform more and more signal-processing operations in the optical domain itself, i.e., with all-optical components and devices that possess a high bandwidth and can perform parallel processing functions to eliminate the electronic bottleneck.

Simple theoretical analysis of the Fowler-Nordheim field emission from microstructures and quantum wires of optoelectronic materials

We present a simplified theoretical formulation of the Fowler-Nordheim field emission (FNFE) under magnetic quantization and also in quantum wires of optoelectronic materials on the basis of a newly formulated electron dispersion law in the presence of strong electric field within the framework of k.p formalism taking InAs, InSb, GaAs, Hg(1-x)Cd(x)Te and In(1-x)Ga(x) As(y)P(1-y) lattice matched to InP as examples. The FNFE exhibits oscillations with inverse quantizing magnetic field and electron concentration due to SdH effect and increases with increasing electric field. For quantum wires the FNFE increases with increasing film thickness due to the existence van-Hove singularity and the magnitude of the quantum jumps are not of same height indicating the signature of the band structure of the material concerned. The appearance of the humps of the respective curves is due to the redistribution of the electrons among the quantized energy levels when the quantum numbers corresponding to the highest occupied level changes from one fixed value to the others. Although the field current varies in various manners with all the variables in all the limiting cases as evident from all the curves, the rates of variations are totally band-structure dependent. Under certain limiting conditions, all the results as derived in this paper get transformed in to well known Fowler-Nordheim formula. (C) 2011 Elsevier Ltd. All rights reserved.

Simple theoretical analysis of the photoemission from quantum confined effective mass superlattices of optoelectronic materials

The photoemission from quantum wires and dots of effective mass superlattices of optoelectronic materials was investigated on the basis of newly formulated electron energy spectra, in the presence of external light waves, which controls the transport properties of ultra-small electronic devices under intense radiation. The effect of magnetic quantization on the photoemission from the aforementioned superlattices, together with quantum well superlattices under magnetic quantization, has also been investigated in this regard. It appears, taking HgTe/Hg1-xCdxTe and InxGa1-xAs/InP effective mass superlattices, that the photoemission from these quantized structures is enhanced with increasing photon energy in quantized steps and shows oscillatory dependences with the increasing carrier concentration. In addition, the photoemission decreases with increasing light intensity and wavelength as well as with increasing thickness exhibiting oscillatory spikes. The strong dependence of the photoemission on the light intensity reflects the direct signature of light waves on the carrier energy spectra. The content of this paper finds six different applications in the fields of low dimensional systems in general.

Theoretical analysis of photoinduced H-atom elimination in thiophenol

The photoinduced hydrogen elimination reaction in thiophenol via the conical intersections of the dissociative (1)pi sigma* excited state with the bound (1)pi pi* excited state and the electronic ground state has been investigated with ab initio electronic-structure calculations and time-dependent quantum wave-packet calculations. A screening of the coupling constants of the symmetry-allowed coupling modes at the (1)pi pi*-(1)pi sigma* and (1)pi sigma*-S-0 conical intersection shows that the SH torsional mode is by far the most important coupling mode at both conical intersections. A model including three intersecting potential-energy surfaces (S-0, (1)pi pi*, (1)pi sigma*) and two nuclear degrees of freedom (SH stretch and SH torsion) has been constructed on the basis of ab initio complete-active-space self-consistent field and multireference second-order perturbation theory calculations. The nonadiabatic quantum wave-packet dynamics initiated by optical excitation of the (1)pi pi* and (1)pi sigma* states has been explored for this three-state two-coordinate model. The photodissociation dynamics is characterized in terms of snapshots of time-dependent wave packets, time-dependent electronic population probabilities, and the branching ratio of the (2)sigma/(2)pi electronic states of the thiophenoxyl radical. The dependence of the timescale of the photodissociation process and the branching ratio on the initial excitation of the SH stretching and SH torsional vibrations has been analyzed. It is shown that the node structure, which is imposed on the nuclear wave packets by the initial vibrational preparation as well as by the transitions through the conical intersections, has a profound effect on the photodissociation dynamics. The effect of additional weak coupling modes of CC twist (nu(16a)) and ring-distortion (nu(16b)) character has been investigated with three-dimensional and four-dimensional time-dependent wave-packet calculations, and has been found to be minor. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4709608]

Derating Based Hardware Optimizations in Soft Error Tolerant Designs

Ensuring reliable operation over an extended period of time is one of the biggest challenges facing present day electronic systems. The increased vulnerability of the components to atmospheric particle strikes poses a big threat in attaining the reliability required for various mission critical applications. Various soft error mitigation methodologies exist to address this reliability challenge. A general solution to this problem is to arrive at a soft error mitigation methodology with an acceptable implementation overhead and error tolerance level. This implementation overhead can then be reduced by taking advantage of various derating effects like logical derating, electrical derating and timing window derating, and/or making use of application redundancy, e. g. redundancy in firmware/software executing on the so designed robust hardware. In this paper, we analyze the impact of various derating factors and show how they can be profitably employed to reduce the hardware overhead to implement a given level of soft error robustness. This analysis is performed on a set of benchmark circuits using the delayed capture methodology. Experimental results show upto 23% reduction in the hardware overhead when considering individual and combined derating factors.

Vibrational spectroscopy and density functional theory analysis of 3-O-caffeoylquinic acid

Density functional theory (DFT) calculations are being performed to investigate the geometric, vibrational, and electronic properties of the chlorogenic acid isomer 3-CQA (1R,3R,4S,5R)-3-{(2E)-3-(3,4-dihydroxyphenyl)prop-2-enoyl]oxy}-1,4, 5-trihydroxycyclohexanecarboxylic acid), a major phenolic compound in coffee. DFT calculations with the 6-311G(d,p) basis set produce very good results. The electrostatic potential mapped onto an isodensity surface has been obtained. A natural bond orbital analysis (NBO) has been performed in order to study intramolecular bonding, interactions among bonds, and delocalization of unpaired electrons. HOMO-LUMO studies give insights into the interaction of the molecule with other species. The calculated HOMO and LUMO energies indicate that a charge transfer occurs within the molecule. (C) 2012 Elsevier B.V. All rights reserved.

Comparison of 3-phase, 3-level UPF rectifier circuits for high power applications

This paper presents an analysis and comparison between two circuit topologies of the 3-phase, 3-level unity power factor (Vienna) rectifier on the basis of packaging issues and semiconductor power losses. The analysis indicates the suitability of one particular circuit variant due to restrictions on switching frequency at higher power levels. A comparison is also done between hysteresis and carrier based PWM strategies for current control of the rectifier, along with experimental evaluation of the control strategies on a hardware prototype of the rectifier. The comparison indicates that the carrier based modulation strategy is better suited for use with higher order filters that are utilized in high power applications.

Stability analysis of aperiodic messages scheduled in the dynamic segment of flex ray protocol

In a cyber physical system like vehicles number of signals to be communicated in a network system has an increasing trend. More and more mechanical and hydraulic parts are replaced by electronic control units and infotainment and multimedia applications has increased in vehicles. Safety critical hard real time messages and aperiodic messages communicated between electronic control units have been increased in recent times. Flexray is a high bandwidth protocol consisting of static segment for supporting hard real time messages and a dynamic segment for transmitting soft and non real time messages. In this paper, a method to obtain the stability region for the random arrival of messages in each electronic control units which is scheduled in the dynamic segment of Flexray protocol is presented. Number of mini slots available in the dynamic segment of Flexray restricts the arrival rate of tasks to the micro controllers or the number of micro controllers connected to the Flexray bus. Stability region of mathematical model of the system is compared with the Flexray protocol simulation results.