Technology and characterization of GaN-HEMTs devices: high temperature and trapping effects

Los transistores de alta movilidad electrónica basados en GaN han sido objeto de una extensa investigación ya que tanto el GaN como sus aleaciones presentan unas excelentes propiedades eléctricas (alta movilidad, elevada concentración de portadores y campo eléctrico crítico alto). Aunque recientemente se han incluido en algunas aplicaciones comerciales, su expansión en el mercado está condicionada a la mejora de varios asuntos relacionados con su rendimiento y habilidad. Durante esta tesis se han abordado algunos de estos aspectos relevantes; por ejemplo, la fabricación de enhancement mode HEMTs, su funcionamiento a alta temperatura, el auto calentamiento y el atrapamiento de carga. Los HEMTs normalmente apagado o enhancement mode han atraído la atención de la comunidad científica dedicada al desarrollo de circuitos amplificadores y conmutadores de potencia, ya que su utilización disminuiría significativamente el consumo de potencia; además de requerir solamente una tensión de alimentación negativa, y reducir la complejidad del circuito y su coste. Durante esta tesis se han evaluado varias técnicas utilizadas para la fabricación de estos dispositivos: el ataque húmedo para conseguir el gate-recess en heterostructuras de InAl(Ga)N/GaN; y tratamientos basados en flúor (plasma CF4 e implantación de F) de la zona debajo de la puerta. Se han llevado a cabo ataques húmedos en heteroestructuras de InAl(Ga)N crecidas sobre sustratos de Si, SiC y zafiro. El ataque completo de la barrera se consiguió únicamente en las muestras con sustrato de Si. Por lo tanto, se puede deducir que la velocidad de ataque depende de la densidad de dislocaciones presentes en la estructura, ya que el Si presenta un peor ajuste del parámetro de red con el GaN. En relación a los tratamientos basados en flúor, se ha comprobado que es necesario realizar un recocido térmico después de la fabricación de la puerta para recuperar la heteroestructura de los daños causados durante dichos tratamientos. Además, el estudio de la evolución de la tensión umbral con el tiempo de recocido ha demostrado que en los HEMTs tratados con plasma ésta tiende a valores más negativos al aumentar el tiempo de recocido. Por el contrario, la tensión umbral de los HEMTs implantados se desplaza hacia valores más positivos, lo cual se atribuye a la introducción de iones de flúor a niveles más profundos de la heterostructura. Los transistores fabricados con plasma presentaron mejor funcionamiento en DC a temperatura ambiente que los implantados. Su estudio a alta temperatura ha revelado una reducción del funcionamiento de todos los dispositivos con la temperatura. Los valores iniciales de corriente de drenador y de transconductancia medidos a temperatura ambiente se recuperaron después del ciclo térmico, por lo que se deduce que dichos efectos térmicos son reversibles. Se han estudiado varios aspectos relacionados con el funcionamiento de los HEMTs a diferentes temperaturas. En primer lugar, se han evaluado las prestaciones de dispositivos de AlGaN/GaN sobre sustrato de Si con diferentes caps: GaN, in situ SiN e in situ SiN/GaN, desde 25 K hasta 550 K. Los transistores con in situ SiN presentaron los valores más altos de corriente drenador, transconductancia, y los valores más bajos de resistencia-ON, así como las mejores características en corte. Además, se ha confirmado que dichos dispositivos presentan gran robustez frente al estrés térmico. En segundo lugar, se ha estudiado el funcionamiento de transistores de InAlN/GaN con diferentes diseños y geometrías. Dichos dispositivos presentaron una reducción casi lineal de los parámetros en DC en el rango de temperaturas de 25°C hasta 225°C. Esto se debe principalmente a la dependencia térmica de la movilidad electrónica, y también a la reducción de la drift velocity con la temperatura. Además, los transistores con mayores longitudes de puerta mostraron una mayor reducción de su funcionamiento, lo cual se atribuye a que la drift velocity disminuye más considerablemente con la temperatura cuando el campo eléctrico es pequeño. De manera similar, al aumentar la distancia entre la puerta y el drenador, el funcionamiento del HEMT presentó una mayor reducción con la temperatura. Por lo tanto, se puede deducir que la degradación del funcionamiento de los HEMTs causada por el aumento de la temperatura depende tanto de la longitud de la puerta como de la distancia entre la puerta y el drenador. Por otra parte, la alta densidad de potencia generada en la región activa de estos transistores conlleva el auto calentamiento de los mismos por efecto Joule, lo cual puede degradar su funcionamiento y Habilidad. Durante esta tesis se ha desarrollado un simple método para la determinación de la temperatura del canal basado en medidas eléctricas. La aplicación de dicha técnica junto con la realización de simulaciones electrotérmicas han posibilitado el estudio de varios aspectos relacionados con el autocalentamiento. Por ejemplo, se han evaluado sus efectos en dispositivos sobre Si, SiC, y zafiro. Los transistores sobre SiC han mostrado menores efectos gracias a la mayor conductividad térmica del SiC, lo cual confirma el papel clave que desempeña el sustrato en el autocalentamiento. Se ha observado que la geometría del dispositivo tiene cierta influencia en dichos efectos, destacando que la distribución del calor generado en la zona del canal depende de la distancia entre la puerta y el drenador. Además, se ha demostrado que la temperatura ambiente tiene un considerable impacto en el autocalentamiento, lo que se atribuye principalmente a la dependencia térmica de la conductividad térmica de las capas y sustrato que forman la heterostructura. Por último, se han realizado numerosas medidas en pulsado para estudiar el atrapamiento de carga en HEMTs sobre sustratos de SiC con barreras de AlGaN y de InAlN. Los resultados obtenidos en los transistores con barrera de AlGaN han presentado una disminución de la corriente de drenador y de la transconductancia sin mostrar un cambio en la tensión umbral. Por lo tanto, se puede deducir que la posible localización de las trampas es la región de acceso entre la puerta y el drenador. Por el contrario, la reducción de la corriente de drenador observada en los dispositivos con barrera de InAlN llevaba asociado un cambio significativo en la tensión umbral, lo que implica la existencia de trampas situadas en la zona debajo de la puerta. Además, el significativo aumento del valor de la resistencia-ON y la degradación de la transconductancia revelan la presencia de trampas en la zona de acceso entre la puerta y el drenador. La evaluación de los efectos del atrapamiento de carga en dispositivos con diferentes geometrías ha demostrado que dichos efectos son menos notables en aquellos transistores con mayor longitud de puerta o mayor distancia entre puerta y drenador. Esta dependencia con la geometría se puede explicar considerando que la longitud y densidad de trampas de la puerta virtual son independientes de las dimensiones del dispositivo. Finalmente se puede deducir que para conseguir el diseño óptimo durante la fase de diseño no sólo hay que tener en cuenta la aplicación final sino también la influencia que tiene la geometría en los diferentes aspectos estudiados (funcionamiento a alta temperatura, autocalentamiento, y atrapamiento de carga). ABSTRACT GaN-based high electron mobility transistors have been under extensive research due to the excellent electrical properties of GaN and its related alloys (high carrier concentration, high mobility, and high critical electric field). Although these devices have been recently included in commercial applications, some performance and reliability issues need to be addressed for their expansion in the market. Some of these relevant aspects have been studied during this thesis; for instance, the fabrication of enhancement mode HEMTs, the device performance at high temperature, the self-heating and the charge trapping. Enhancement mode HEMTs have become more attractive mainly because their use leads to a significant reduction of the power consumption during the stand-by state. Moreover, they enable the fabrication of simpler power amplifier circuits and high-power switches because they allow the elimination of negativepolarity voltage supply, reducing significantly the circuit complexity and system cost. In this thesis, different techniques for the fabrication of these devices have been assessed: wet-etching for achieving the gate-recess in InAl(Ga)N/GaN devices and two different fluorine-based treatments (CF4 plasma and F implantation). Regarding the wet-etching, experiments have been carried out in InAl(Ga)N/GaN grown on different substrates: Si, sapphire, and SiC. The total recess of the barrier was achieved after 3 min of etching in devices grown on Si substrate. This suggests that the etch rate can critically depend on the dislocations present in the structure, since the Si exhibits the highest mismatch to GaN. Concerning the fluorine-based treatments, a post-gate thermal annealing was required to recover the damages caused to the structure during the fluorine-treatments. The study of the threshold voltage as a function of this annealing time has revealed that in the case of the plasma-treated devices it become more negative with the time increase. On the contrary, the threshold voltage of implanted HEMTs showed a positive shift when the annealing time was increased, which is attributed to the deep F implantation profile. Plasma-treated HEMTs have exhibited better DC performance at room temperature than the implanted devices. Their study at high temperature has revealed that their performance decreases with temperature. The initial performance measured at room temperature was recovered after the thermal cycle regardless of the fluorine treatment; therefore, the thermal effects were reversible. Thermal issues related to the device performance at different temperature have been addressed. Firstly, AlGaN/GaN HEMTs grown on Si substrate with different cap layers: GaN, in situ SiN, or in situ SiN/GaN, have been assessed from 25 K to 550 K. In situ SiN cap layer has been demonstrated to improve the device performance since HEMTs with this cap layer have exhibited the highest drain current and transconductance values, the lowest on-resistance, as well as the best off-state characteristics. Moreover, the evaluation of thermal stress impact on the device performance has confirmed the robustness of devices with in situ cap. Secondly, the high temperature performance of InAlN/GaN HEMTs with different layouts and geometries have been assessed. The devices under study have exhibited an almost linear reduction of the main DC parameters operating in a temperature range from room temperature to 225°C. This was mainly due to the thermal dependence of the electron mobility, and secondly to the drift velocity decrease with temperature. Moreover, HEMTs with large gate length values have exhibited a great reduction of the device performance. This was attributed to the greater decrease of the drift velocity for low electric fields. Similarly, the increase of the gate-to-drain distance led to a greater reduction of drain current and transconductance values. Therefore, this thermal performance degradation has been found to be dependent on both the gate length and the gate-to-drain distance. It was observed that the very high power density in the active region of these transistors leads to Joule self-heating, resulting in an increase of the device temperature, which can degrade the device performance and reliability. A simple electrical method have been developed during this work to determine the channel temperature. Furthermore, the application of this technique together with the performance of electro-thermal simulations have enabled the evaluation of different aspects related to the self-heating. For instance, the influence of the substrate have been confirmed by the study of devices grown on Si, SiC, and Sapphire. HEMTs grown on SiC substrate have been confirmed to exhibit the lowest self-heating effects thanks to its highest thermal conductivity. In addition to this, the distribution of the generated heat in the channel has been demonstrated to be dependent on the gate-to-drain distance. Besides the substrate and the geometry of the device, the ambient temperature has also been found to be relevant for the self-heating effects, mainly due to the temperature-dependent thermal conductivity of the layers and the substrate. Trapping effects have been evaluated by means of pulsed measurements in AlGaN and InAIN barrier devices. AlGaN barrier HEMTs have exhibited a de crease in drain current and transconductance without measurable threshold voltage change, suggesting the location of the traps in the gate-to-drain access region. On the contrary, InAIN barrier devices have showed a drain current associated with a positive shift of threshold voltage, which indicated that the traps were possibly located under the gate region. Moreover, a significant increase of the ON-resistance as well as a transconductance reduction were observed, revealing the presence of traps on the gate-drain access region. On the other hand, the assessment of devices with different geometries have demonstrated that the trapping effects are more noticeable in devices with either short gate length or the gate-to-drain distance. This can be attributed to the fact that the length and the trap density of the virtual gate are independent on the device geometry. Finally, it can be deduced that besides the final application requirements, the influence of the device geometry on the performance at high temperature, on the self-heating, as well as on the trapping effects need to be taken into account during the device design stage to achieve the optimal layout.

Análisis y simulación numérica de problemas electrohidrodinámicos relacionados con el electrospray

La presente tesis es un estudio analítico y numérico del electrospray. En la configuración más sencilla, un caudal constante del líquido a atomizar, que debe tener una cierta conductividad eléctrica, se inyecta en un medio dieléctrico (un gas u otro líquido inmiscible con el primero) a través de un tubo capilar metálico. Entre este tubo y un electrodo lejano se aplica un voltaje continuo que origina un campo eléctrico en el líquido conductor y en el espacio que lo rodea. El campo eléctrico induce una corriente eléctrica en el líquido, que acumula carga en su superficie, y da lugar a un esfuerzo eléctrico sobre la superficie, que tiende a alargarla en la dirección del campo eléctrico. El líquido forma un menisco en el extremo del tubo capilar cuando el campo eléctrico es suficientemente intenso y el caudal suficientemente pequeño. Las variaciones de presión y los esfuerzos viscosos asociados al movimiento del líquido son despreciables en la mayor parte de este menisco, siendo dominantes los esfuerzos eléctrico y de tensión superficial que actúan sobre la superficie del líquido. En el modo de funcionamiento llamado de conochorro, el balance de estos esfuerzos hace que el menisco adopte una forma cónica (el cono de Taylor) en una región intermedia entre el extremo del tubo y la punta del menisco. La velocidad del líquido aumenta al acercarse al vértice del cono, lo cual propicia que las variaciones de la presión en el líquido generadas por la inercia o por la viscosidad entren en juego, desequilibrando el balance de esfuerzos mencionado antes. Como consecuencia, del vértice del cono sale un delgado chorro de líquido, que transporta la carga eléctrica que se acumula en la superficie. La acción del campo eléctrico tangente a la superficie sobre esta carga origina una tracción eléctrica que tiende a alargar el chorro. Esta tracción no es relevante en el menisco, donde el campo eléctrico tangente a la superficie es muy pequeño, pero se hace importante en el chorro, donde es la causa del movimiento del líquido. Lejos del cono, el chorro puede o bien desarrollar una inestabilidad asimétrica que lo transforma en una espiral (whipping) o bien romperse en un spray de gotas prácticamente monodispersas cargadas eléctricamente. La corriente eléctrica transportada por el líquido es la suma de la corriente de conducción en el interior del líquido y la corriente debida a la convección de la carga acumulada en su superficie. La primera domina en el menisco y la segunda en el chorro lejano, mientras que las dos son comparables en una región intermedia de transferencia de corriente situada al comienzo del chorro aunque aguas abajo de la región de transición cono-chorro, en la que el menisco deja de ser un cono de Taylor. Para un campo exterior dado, la acumulación de carga eléctrica en la superficie del líquido reduce el campo eléctrico en el interior del mismo, que llega a anularse cuando la carga alcanza un estado final de equilibrio. El tiempo característico de este proceso es el tiempo de relajación dieléctrica, que es una propiedad del líquido. Cuando el tiempo de residencia del líquido en la región de transición cono-chorro (o en otra región del campo fluido) es grande frente al tiempo de relajación dieléctrica, la carga superficial sigue una sucesión de estados de equilibrio y apantalla al líquido del campo exterior. Cuando esta condición deja de cumplirse, aparecen efectos de relajación de carga, que se traducen en que el campo exterior penetra en el líquido, a no ser que su constante dieléctrica sea muy alta, en cuyo caso el campo inducido por la carga de polarización evita la entrada del campo exterior en el menisco y en una cierta región del chorro. La carga eléctrica en equilibrio en la superficie de un menisco cónico intensifica el campo eléctrico y determina su variación espacial hasta distancias aguas abajo del menisco del orden de su tamaño. Este campo, calculado por Taylor, es independiente del voltaje aplicado, por lo que las condiciones locales del flujo y el valor de la corriente eléctrica son también independientes del voltaje en tanto los tamaños de las regiones que determinan estas propiedades sean pequeños frente al tamaño del menisco. Los resultados experimentales publicados en la literatura muestran que existe un caudal mínimo para el que el modo cono-chorro que acabamos de describir deja de existir. El valor medio y la desviación típica de la distribución de tamaños de las gotas generadas por un electrospray son mínimos cuando se opera cerca del caudal mínimo. A pesar de que los mecanismos responsables del caudal mínimo han sido muy estudiados, no hay aún una teoría completa del mismo, si bien su existencia parece estar ligada a la aparición de efectos de relajación de carga en la región de transición cono-chorro. En esta tesis, se presentan estimaciones de orden de magnitud, algunas existentes y otras nuevas, que muestran los balances dominantes responsables de las distintas regiones de la estructura asintótica de la solución en varios casos de interés. Cuando la inercia del líquido juega un papel en la transición cono-chorro, los resultados muestran que la región de transferencia de corriente, donde la mayor parte de la corriente pasa a la superficie, está en el chorro aguas abajo de la región de transición cono-chorro. Los efectos de relajación de carga aparecen de forma simultánea en el chorro y la región de transición cuando el caudal se disminuye hasta valores de un cierto orden. Para caudales aún menores, los efectos de relajación de carga se notan en el menisco, en una región grande comparada con la de transición cono-chorro. Cuando el efecto de las fuerzas de viscosidad es dominante en la región de transición, la región de transferencia de corriente está en el chorro pero muy próxima a la región de transición cono-chorro. Al ir disminuyendo el caudal, los efectos de relajación de carga aparecen progresivamente en el chorro, en la región de transición y por último en el menisco. Cuando el caudal es mucho mayor que el mínimo del modo cono-chorro, el menisco deja de ser cónico. El campo eléctrico debido al voltaje aplicado domina en la región de transferencia de corriente, y tanto la corriente eléctrica como el tamaño de las diferentes regiones del problema pasan a depender del voltaje aplicado. Como resultado de esta dependencia, el plano caudal-voltaje se divide en diferentes regiones que se analizan separadamente. Para caudales suficientemente grandes, la inercia del líquido termina dominando frente a las fuerzas de la viscosidad. Estos resultados teóricos se han validado con simulaciones numéricas. Para ello se ha formulado un modelo simplificado del flujo, el campo eléctrico y el transporte de carga en el menisco y el chorro del electrospray. El movimiento del líquido se supone casi unidireccional y se describe usando la aproximación de Cosserat para un chorro esbelto. Esta aproximación, ampliamente usada en la literatura, permite simular con relativa facilidad múltiples casos y cubrir amplios rangos de valores de los parámetros reteniendo los efectos de la viscosidad y la inercia del líquido. Los campos eléctricos dentro y fuera del liquido están acoplados y se calculan sin simplificación alguna usando un método de elementos de contorno. La solución estacionaria del problema se calcula mediante un método iterativo. Para explorar el espacio de los parámetros, se comienza calculando una solución para valores fijos de las propiedades del líquido, el voltaje aplicado y el caudal. A continuación, se usa un método de continuación que permite delinear la frontera del dominio de existencia del modo cono-chorro, donde el método iterativo deja de converger. Cuando el efecto de la inercia del líquido domina en la región de transición cono-chorro, el caudal mínimo para el cual el método iterativo deja de converger es del orden del valor estimado del caudal para el que comienza a haber efectos de relajación de carga en el chorro y el cono. Aunque las simulaciones no convergen por debajo de dicho caudal, el valor de la corriente eléctrica para valores del caudal ligeramente mayores parece ajustarse a las estimaciones para caudales menores, reflejando un posible cambio en los balances aplicables. Por el contrario, cuando las fuerzas viscosas dominan en la región de transición, se pueden obtener soluciones estacionarias para caudales bastante menores que aquel para el que aparecen efectos de relajación de carga en la región de transición cono-chorro. Los resultados numéricos obtenidos para estos pequeños caudales se ajustan perfectamente a las estimaciones de orden de magnitud que se describen en la memoria. Por último, se incluyen como anexos dos estudios teóricos que han surgido de forma natural durante el desarrollo de la tesis. El primero hace referencia a la singularidad en el campo eléctrico que aparece en la línea de contacto entre el líquido y el tubo capilar en la mayoría de las simulaciones. Primero se estudia en qué situaciones el campo eléctrico tiende a infinito en la línea de contacto. Después, se comprueba que dicha singularidad no supone un fallo en la descripción del problema y que además no afecta a la solución lejos de la línea de contacto. También se analiza si los esfuerzos eléctricos infinitamente grandes a los que da lugar dicha singularidad pueden ser compensados por el resto de esfuerzos que actúan en la superficie del líquido. El segundo estudio busca determinar el tamaño de la región de apantallamiento en un chorro de líquido dieléctrico sin carga superficial. En esta región, el campo exterior es compensado parcialmente por el campo que induce la carga de polarización en la superficie del líquido, de forma que en el interior del líquido el campo eléctrico es mucho menor que en el exterior. Una región como ésta aparece en las estimaciones cuando los efectos de relajación de carga son importantes en la región de transferencia de corriente en el chorro. ABSTRACT This aim of this dissertation is a theoretical and numerical analysis of an electrospray. In its most simple configuration, a constant flow rate of the liquid to be atomized, which has to be an electrical conductor, is injected into a dielectric medium (a gas or another inmiscible fluid) through a metallic capillary tube. A constant voltage is applied between this tube and a distant electrode that produces an electric field in the liquid and the surrounding medium. This electric field induces an electric current in the liquid that accumulates charge at its surface and leads to electric stresses that stretch the surface in the direction of the electric field. A meniscus appears on the end of the capillary tube when the electric field is sufficiently high and the flow rate is small. Pressure variations and viscous stresses due to the motion of the liquid are negligible in most of the meniscus, where normal electric and surface tension stresses acting on the surface are dominant. In the so-called cone-jet mode, the balance of these stresses forces the surface to adopt a conical shape -Taylor cone- in a intermediate region between the end of the tube and the tip of the meniscus. When approaching the cone apex, the velocity of the liquid increases and leads to pressure variations that eventually disturb the balance of surfaces tension and electric stresses. A thin jet emerges then from the tip of the meniscus that transports the charge accumulated at its surface. The electric field tangent to the surface of the jet acts on this charge and continuously stretches the jet. This electric force is negligible in the meniscus, where the component of the electric field tangent to the surface is small, but becomes very important in the jet. Far from the cone, the jet can either develop an asymmetrical instability named “whipping”, whereby the jet winds into a spiral, or break into a spray of small, nearly monodisperse, charged droplets. The electric current transported by the liquid has two components, the conduction current in the bulk of the liquid and the convection current due to the transport of the surface charge by the flow. The first component dominates in the meniscus, the second one in the far jet, and both are comparable in a current transfer region located in the jet downstream of the cone-jet transition region where the meniscus ceases to be a Taylor cone. Given an external electric field, the charge that accumulates at the surface of the liquid reduces the electric field inside the liquid, until an equilibrium is reached in which the electric field induced by the surface charge counters the external electric field and shields the liquid from this field. The characteristic time of this process is the electric relaxation time, which is a property of the liquid. When the residence time of the liquid in the cone-jet transition region (or in other region of the flow) is greater than the electric relaxation time, the surface charge follows a succession of equilibrium states and continuously shield the liquid from the external field. When this condition is not satisfied, charge relaxation effects appear and the external field penetrates into the liquid unless the liquid permittivity is large. For very polar liquids, the field due to the polarization charge at the surface prevents the external field from entering the liquid in the cone and in certain region of the jet. The charge at the surface of a conical meniscus intensifies the electric field around the cone, determining its spatial variation up to distances downstream of the apex of the order of the size of the meniscus. This electric field, first computed by Taylor, is independent of the applied voltage. Therefore local flow characteristics and the electric current carried by the jet are also independent of the applied voltage provided the size of the regions that determine these magnitudes are small compared with the size of the meniscus. Many experiments in the literature show the existence of a minimum flow rate below which the cone-jet mode cannot be established. The mean value and the standard deviation of the electrospray droplet size distribution are minimum when the device is operated near the minimum flow rate. There is no complete explanation of the minimum flow rate, even though possible mechanisms have been extensively studied. The existence of a minimum flow rate seems to be connected with the appearance of charge relaxation effects in the transition region. In this dissertation, order of magnitude estimations are worked out that show the dominant balances in the different regions of the asymptotic structure of the solution for different conditions of interest. When the inertia of the liquid plays a role in the cone-jet transition region, the region where most of the electric current is transfered to the surface lies in the jet downstream the cone-jet transition region. When the flow rate decreases to a certain value, charge relaxation effects appear simultaneously in the jet and in the transition region. For smaller values of the flow rate, charge relaxation effects are important in a region of the meniscus larger than the transition region. When viscous forces dominate in the flow in the cone-jet transition region, the current transfer region is located in the jet immediately after the transition region. When flow rate is decreased, charge relaxation effects appears gradually, first in the jet, then in the transition region, and finally in the meniscus. When flow rate is much larger than the cone-jet mode minimum, the meniscus ceases to be a cone. The electric current and the structure of the solution begin to depend on the applied voltage. The flow rate-voltage plane splits into different regions that are analyzed separately. For sufficiently large flow rates, the effect of the inertia of the liquid always becomes greater than the effect of the viscous forces. A set of numerical simulations have been carried out in order to validate the theoretical results. A simplified model of the problem has been devised to compute the flow, the electric field and the surface charge in the meniscus and the jet of an electrospray. The motion of the liquid is assumed to be quasi-unidirectional and described by Cosserat’s approximation for a slender jet. This widely used approximation allows to easily compute multiple configurations and to explore wide ranges of values of the governing parameters, retaining the effects of the viscosity and the inertia of the liquid. Electric fields inside and outside the liquid are coupled and are computed without any simplification using a boundary elements method. The stationary solution of the problem is obtained by means of an iterative method. To explore the parameter space, a solution is first computed for a set of values of the liquid properties, the flow rate and the applied voltage, an then a continuation method is used to find the boundaries of the cone-jet mode domain of existence, where the iterative method ceases to converge. When the inertia of the liquid dominates in the cone-jet transition region, the iterative method ceases to converge for values of the flow rate for which order-of-magnitude estimates first predict charge relaxation effects to be important in the cone and the jet. The electric current computed for values of the flow rate slightly above the minimum for which convergence is obtained seems to agree with estimates worked out for lower flow rates. When viscous forces dominate in the transition region, stationary solutions can be obtained for flow rates significantly smaller than the one for which charge relaxation effects first appear in the transition region. Numerical results obtained for those small values of the flow rate agree with our order of magnitude estimates. Theoretical analyses of two issues that have arisen naturally during the thesis are summarized in two appendices. The first appendix contains a study of the singularity of the electric field that most of the simulations show at the contact line between the liquid and the capillary tube. The electric field near the contact line is analyzed to determine the ranges of geometrical configurations and liquid permittivity where a singularity appears. Further estimates show that this singularity does not entail a failure in the description of the problem and does not affect the solution far from the contact line. The infinite electric stresses that appear at the contact line can be effectively balanced by surface tension. The second appendix contains an analysis of the size and slenderness of the shielded region of a dielectric liquid in the absence of free surface charge. In this region, the external electric field is partially offset by the polarization charge so that the inner electric field is much lower than the outer one. A similar region appears in the estimates when charge relaxation effects are important in the current transfer region.

The peculiar electrical response of liquid crystal-carbon nanotube systems as seen by impedance spectroscopy

Conductive nanoparticles, especially elongated ones such as carbon nanotubes, dramatically modify the electrical behavior of liquid crystal cells. These nanoparticles are known to reorient with liquid crystals in electric fields, causing significant variations of conductivity at minute concentrations of tens or hundreds ppm. The above notwithstanding, impedance spectroscopy of doped cells in the frequency range customarily employed by liquid crystal devices, 100 Hz?10 kHz, shows a relatively simple resistor/capacitor response where the components of the cell can be univocally assigned to single components of the electrical equivalent circuit. However, widening the frequency range up to 1 MHz or beyond reveals a complex behavior that cannot be explained with the same simple EEC. Moreover, the system impedance varies with the application of electric fields, their effect remaining after removing the field. Carbon nanotubes are reoriented together with liquid crystal reorientation when applying voltage, but barely reoriented back upon liquid crystal relaxation once the voltage is removed. Results demonstrate a remarkable variation in the impedance of the dielectric blend formed by liquid crystal and carbon nanotubes, the irreversible orientation of the carbon nanotubes and possible permanent contacts between electrodes.

Two-dimensional infrared spectroscopy of peptides by phase-controlled femtosecond vibrational photon echoes

Two-dimensional infrared spectra of peptides are introduced that are the direct analogues of two- and three-pulse multiple quantum NMR. Phase matching and heterodyning are used to isolate the phase and amplitudes of the electric fields of vibrational photon echoes as a function of multiple pulse delays. Structural information is made available on the time scale of a few picoseconds. Line narrowed spectra of acyl-proline-NH2 and cross peaks implying the coupling between its amide-I modes are obtained, as are the phases of the various contributions to the signals. Solvent-sensitive structural differences are seen for the dipeptide. The methods show great promise to measure structure changes in biology on a wide range of time scales.

Proactive and reactive inhibition during overt and covert actions. An electrical neuroimaging study.

Response inhibition is the ability to suppress inadequate but automatically activated, prepotent or ongoing response tendencies. In the framework of motor inhibition, two distinct operating strategies have been described: “proactive” and “reactive” control modes. In the proactive modality, inhibition is recruited in advance by predictive signals, and actively maintained before its enactment. Conversely, in the reactive control mode, inhibition is phasically enacted after the detection of the inhibitory signal. To date, ample evidence points to a core cerebral network for reactive inhibition comprising the right inferior frontal gyrus (rIFG), the presupplementary motor area (pre-SMA) and the basal ganglia (BG). Moreover, fMRI studies showed that cerebral activations during proactive and reactive inhibition largely overlap. These findings suggest that at least part of the neural network for reactive inhibition is recruited in advance, priming cortical regions in preparation for the upcoming inhibition. So far, proactive and reactive inhibitory mechanisms have been investigated during tasks in which the requested response to be stopped or withheld was an “overt” action execution (AE) (i.e., a movement effectively performed). Nevertheless, inhibitory mechanisms are also relevant for motor control during “covert actions” (i.e., potential motor acts not overtly performed), such as motor imagery (MI). MI is the conscious, voluntary mental rehearsal of action representations without any overt movement. Previous studies revealed a substantial overlap of activated motor-related brain networks in premotor, parietal and subcortical regions during overtly executed and imagined movements. Notwithstanding this evidence for a shared set of cerebral regions involved in encoding actions, whether or not those actions are effectively executed, the neural bases of motor inhibition during MI, preventing covert action from being overtly performed, in spite of the activation of the motor system, remain to be fully clarified. Taking into account this background, we performed a high density EEG study evaluating cerebral mechanisms and their related sources elicited during two types of cued Go/NoGo task, requiring the execution or withholding of an overt (Go) or a covert (MI) action, respectively. The EEG analyses were performed in two steps, with different aims: 1) Analysis of the “response phase” of the cued overt and covert Go/NoGo tasks, for the evaluation of reactive inhibitory control of overt and covert actions. 2) Analysis of the “preparatory phase” of the cued overt and covert Go/NoGo EEG datasets, focusing on cerebral activities time-locked to the preparatory signals, for the evaluation of proactive inhibitory mechanisms and their related neural sources. For these purposes, a spatiotemporal analysis of the scalp electric fields was applied on the EEG data recorded during the overt and covert Go/NoGo tasks. The spatiotemporal approach provide an objective definition of time windows for source analysis, relying on the statistical proof that the electric fields are different and thus generated by different neural sources. The analysis of the “response phase” revealed that key nodes of the inhibitory circuit, underpinning inhibition of the overt movement during the NoGo response, were also activated during the MI enactment. In both cases, inhibition relied on the activation of pre-SMA and rIFG, but with different temporal patterns of activation in accord with the intended “covert” or “overt” modality of motor performance. During the NoGo condition, the pre-SMA and rIFG were sequentially activated, pointing to an early decisional role of pre-SMA and to a later role of rIFG in the enactment of inhibitory control of the overt action. Conversely, a concomitant activation of pre-SMA and rIFG emerged during the imagined motor response. This latter finding suggested that an inhibitory mechanism (likely underpinned by the rIFG), could be prewired into a prepared “covert modality” of motor response, as an intrinsic component of the MI enactment. This mechanism would allow the rehearsal of the imagined motor representations, without any overt movement. The analyses of the “preparatory phase”, confirmed in both overt and covert Go/NoGo tasks the priming of cerebral regions pertaining to putative inhibitory network, reactively triggered in the following response phase. Nonetheless, differences in the preparatory strategies between the two tasks emerged, depending on the intended “overt” or “covert” modality of the possible incoming motor response. During the preparation of the overt Go/NoGo task, the cue primed the possible overt response programs in motor and premotor cortex. At the same time, through preactivation of a pre-SMA-related decisional mechanism, it triggered a parallel preparation for the successful response selection and/or inhibition during the subsequent response phase. Conversely, the preparatory strategy for the covert Go/NoGo task was centred on the goal-oriented priming of an inhibitory mechanism related to the rIFG that, being tuned to the instructed covert modality of the motor performance and instantiated during the subsequent MI enactment, allowed the imagined response to remain a potential motor act. Taken together, the results of the present study demonstrate a substantial overlap of cerebral networks activated during proactive recruitment and subsequent reactive enactment of motor inhibition in both overt and covert actions. At the same time, our data show that preparatory cues predisposed ab initio a different organization of the cerebral areas (in particular of the pre-SMA and rIFG) involved with sensorimotor transformations and motor inhibitory control for executed and imagined actions. During the preparatory phases of our cued overt and covert Go/NoGo tasks, the different adopted strategies were tuned to the “how” of the motor performance, reflecting the intended overt and covert modality of the possible incoming action.

Quantum Information Processing with spin systems: from modeling to possible implementations

The physical implementation of quantum information processing is one of the major challenges of current research. In the last few years, several theoretical proposals and experimental demonstrations on a small number of qubits have been carried out, but a quantum computing architecture that is straightforwardly scalable, universal, and realizable with state-of-the-art technology is still lacking. In particular, a major ultimate objective is the construction of quantum simulators, yielding massively increased computational power in simulating quantum systems. Here we investigate promising routes towards the actual realization of a quantum computer, based on spin systems. The first one employs molecular nanomagnets with a doublet ground state to encode each qubit and exploits the wide chemical tunability of these systems to obtain the proper topology of inter-qubit interactions. Indeed, recent advances in coordination chemistry allow us to arrange these qubits in chains, with tailored interactions mediated by magnetic linkers. These act as switches of the effective qubit-qubit coupling, thus enabling the implementation of one- and two-qubit gates. Molecular qubits can be controlled either by uniform magnetic pulses, either by local electric fields. We introduce here two different schemes for quantum information processing with either global or local control of the inter-qubit interaction and demonstrate the high performance of these platforms by simulating the system time evolution with state-of-the-art parameters. The second architecture we propose is based on a hybrid spin-photon qubit encoding, which exploits the best characteristic of photons, whose mobility is exploited to efficiently establish long-range entanglement, and spin systems, which ensure long coherence times. The setup consists of spin ensembles coherently coupled to single photons within superconducting coplanar waveguide resonators. The tunability of the resonators frequency is exploited as the only manipulation tool to implement a universal set of quantum gates, by bringing the photons into/out of resonance with the spin transition. The time evolution of the system subject to the pulse sequence used to implement complex quantum algorithms has been simulated by numerically integrating the master equation for the system density matrix, thus including the harmful effects of decoherence. Finally a scheme to overcome the leakage of information due to inhomogeneous broadening of the spin ensemble is pointed out. Both the proposed setups are based on state-of-the-art technological achievements. By extensive numerical experiments we show that their performance is remarkably good, even for the implementation of long sequences of gates used to simulate interesting physical models. Therefore, the here examined systems are really promising buildingblocks of future scalable architectures and can be used for proof-of-principle experiments of quantum information processing and quantum simulation.

Solvent induced NMR chemical shifts that arise from molecular encounters

Recently Homer and Percival have postulated that intermolecular van der Waals dispersion forces can be characterized by three mechanisms. The first arises via the mean square reaction field < R1; 2> due to the transient dipole of a particular solute molecule that is considered situated in a cavity surrounded by solvent molecules; this was characterized by an extended Onsager approach. The second stems from the extra cavity mean square reaction field < R2; 2> of the near neighbour solvent molecules. The third originates from square field electric fields E2BI due to a newly characterized effect in which solute atoms are `buffeted' by the peripheral atoms of adjacent solvent molecules. The present work concerns more detailed studies of the buffeting screening, which is governed by sterically controlled parameter (2T - T)2, where and are geometric structural parameters. The original approach is used to characterise the buffeting shifts induced by large solvent molecules and the approach is found to be inadequate. Consequently, improved methods of calculating and are reported. Using the improved approach it is shown that buffeting is dependent on the nature of the solvent as well as the nature of the solute molecule. Detailed investigation of the buffeting component of the van der Waals chemical shifts of selected solutes in a range of solvents containing either H or Cl as peripheral atoms have enabled the determination of a theoretical acceptable value for the classical screening coefficient B for protons. 1H and 13C resonance studies of tetraethylmethane and 1H, 13C and 29Si resonance studies of TMS have been used to support the original contention that three (< R1; 2> , < R2; 2> and E2BI) components of intermolecular van der Waals dispersion fields are required to characterise vdW chemical shifts.

A class of perfect fluids in general relativity

This thesis is concerned with exact solutions of Einstein's field equations of general relativity, in particular, when the source of the gravitational field is a perfect fluid with a purely electric Weyl tensor. General relativity, cosmology and computer algebra are discussed briefly. A mathematical introduction to Riemannian geometry and the tetrad formalism is then given. This is followed by a review of some previous results and known solutions concerning purely electric perfect fluids. In addition, some orthonormal and null tetrad equations of the Ricci and Bianchi identities are displayed in a form suitable for investigating these space-times. Conformally flat perfect fluids are characterised by the vanishing of the Weyl tensor and form a sub-class of the purely electric fields in which all solutions are known (Stephani 1967). The number of Killing vectors in these space-times is investigated and results presented for the non-expanding space-times. The existence of stationary fields that may also admit 0, 1 or 3 spacelike Killing vectors is demonstrated. Shear-free fluids in the class under consideration are shown to be either non-expanding or irrotational (Collins 1984) using both orthonormal and null tetrads. A discrepancy between Collins (1984) and Wolf (1986) is resolved by explicitly solving the field equations to prove that the only purely electric, shear-free, geodesic but rotating perfect fluid is the Godel (1949) solution. The irrotational fluids with shear are then studied and solutions due to Szafron (1977) and Allnutt (1982) are characterised. The metric is simplified in several cases where new solutions may be found. The geodesic space-times in this class and all Bianchi type 1 perfect fluid metrics are shown to have a metric expressible in a diagonal form. The position of spherically symmetric and Bianchi type 1 space-times in relation to the general case is also illustrated.

Dissipative nonlinear structures in fiber optics

Optical fiber materials exhibit a nonlinear response to strong electric fields, such as those of optical signals confined within the small fiber core. Fiber nonlinearity is an essential component in the design of the next generation of advanced optical communication systems, but its use is often avoided by engineers because of its intractability. The application of nonlinear technologies in fiber optics offers new opportunities for the design of photonic systems and devices. In this chapter, we make an overview of recent progress in mathematical theory and practical applications of temporal dissipative solitons and self-similar nonlinear structures in optical fiber systems. The design of all-optical high-speed signal processing devices, based on nonlinear dissipative structures, is discussed.

Dissipative nonlinear structures in fiber optics

Optical fiber materials exhibit a nonlinear response to strong electric fields, such as those of optical signals confined within the small fiber core. Fiber nonlinearity is an essential component in the design of the next generation of advanced optical communication systems, but its use is often avoided by engineers because of its intractability. The application of nonlinear technologies in fiber optics offers new opportunities for the design of photonic systems and devices. In this chapter, we make an overview of recent progress in mathematical theory and practical applications of temporal dissipative solitons and self-similar nonlinear structures in optical fiber systems. The design of all-optical high-speed signal processing devices, based on nonlinear dissipative structures, is discussed.

Nonlinear quantum transport in low-dimensional electronic devices

The study of transport processes in low-dimensional semiconductors requires a rigorous quantum mechanical treatment. However, a full-fledged quantum transport theory of electrons (or holes) in semiconductors of small scale, applicable in the presence of external fields of arbitrary strength, is still not available. In the literature, different approaches have been proposed, including: (a) the semiclassical Boltzmann equation, (b) perturbation theory based on Keldysh's Green functions, and (c) the Quantum Boltzmann Equation (QBE), previously derived by Van Vliet and coworkers, applicable in the realm of Kubo's Linear Response Theory (LRT). ^ In the present work, we follow the method originally proposed by Van Wet in LRT. The Hamiltonian in this approach is of the form: H = H 0(E, B) + λV, where H0 contains the externally applied fields, and λV includes many-body interactions. This Hamiltonian differs from the LRT Hamiltonian, H = H0 - AF(t) + λV, which contains the external field in the field-response part, -AF(t). For the nonlinear problem, the eigenfunctions of the system Hamiltonian, H0(E, B), include the external fields without any limitation on strength. ^ In Part A of this dissertation, both the diagonal and nondiagonal Master equations are obtained after applying projection operators to the von Neumann equation for the density operator in the interaction picture, and taking the Van Hove limit, (λ → 0, t → ∞, so that (λ2 t)n remains finite). Similarly, the many-body current operator J is obtained from the Heisenberg equation of motion. ^ In Part B, the Quantum Boltzmann Equation is obtained in the occupation-number representation for an electron gas, interacting with phonons or impurities. On the one-body level, the current operator obtained in Part A leads to the Generalized Calecki current for electric and magnetic fields of arbitrary strength. Furthermore, in this part, the LRT results for the current and conductance are recovered in the limit of small electric fields. ^ In Part C, we apply the above results to the study of both linear and nonlinear longitudinal magneto-conductance in quasi one-dimensional quantum wires (1D QW). We have thus been able to quantitatively explain the experimental results, recently published by C. Brick, et al., on these novel frontier-type devices. ^

Real-time biosensor for the assessment of nanotoxicity and cancer electrotherapy

Knowledge of cell electronics has led to their integration to medicine either by physically interfacing electronic devices with biological systems or by using electronics for both detection and characterization of biological materials. In this dissertation, an electrical impedance sensor (EIS) was used to measure the electrode surface impedance changes from cell samples of human and environmental toxicity of nanoscale materials in 2D and 3D cell culture models. The impedimetric response of human lung fibroblasts and rainbow trout gill epithelial cells when exposed to various nanomaterials was tested to determine their kinetic effects towards the cells and to demonstrate the biosensor's ability to monitor nanotoxicity in real-time. Further, the EIS allowed rapid, real-time and multi-sample analysis creating a versatile, noninvasive tool that is able to provide quantitative information with respect to alteration in cellular function. We then extended the application of the unique capabilities of the EIS to do real-time analysis of cancer cell response to externally applied alternating electric fields at different intermediate frequencies and low-intensity. Decreases in the growth profiles of the ovarian and breast cancer cells were observed with the application of 200 and 100 kHz, respectively, indicating specific inhibitory effects on dividing cells in culture in contrast to the non-cancerous HUVECs and mammary epithelial cells. We then sought to enhance the effects of the electric field by altering the cancer cell's electronegative membrane properties with HER2 antibody functionalized nanoparticles. An Annexin V/EthD-III assay and zeta potential were performed to determine the cell death mechanism indicating apoptosis and a decrease in zeta potential with the incorporation of the nanoparticles. With more negatively charged HER2-AuNPs attached to the cancer cell membrane, the decrease in membrane potential would thus leave the cells more vulnerable to the detrimental effects of the applied electric field due to the decrease in surface charge. Therefore, by altering the cell membrane potential, one could possibly control the fate of the cell. This whole cell-based biosensor will enhance our understanding of the responsiveness of cancer cells to electric field therapy and demonstrate potential therapeutic opportunities for electric field therapy in the treatment of cancer.

Synthesis and electron emission properties of aligned carbon nanotube arrays

Carbon nanotubes (CNTs) have become one of the most interesting allotropes of carbon due to their intriguing mechanical, electrical, thermal and optical properties. The synthesis and electron emission properties of CNT arrays have been investigated in this work. Vertically aligned CNTs of different densities were synthesized on copper substrate with catalyst dots patterned by nanosphere lithography. The CNTs synthesized with catalyst dots patterned by spheres of 500 nm diameter exhibited the best electron emission properties with the lowest turn-on/threshold electric fields and the highest field enhancement factor. Furthermore, CNTs were treated with NH3 plasma for various durations and the optimum enhancement was obtained for a plasma treatment of 1.0 min. CNT point emitters were also synthesized on a flat-tip or a sharp-tip to understand the effect of emitter geometry on the electron emission. The experimental results show that electron emission can be enhanced by decreasing the screening effect of the electric field by neighboring CNTs. In another part of the dissertation, vertically aligned CNTs were synthesized on stainless steel (SS) substrates with and without chemical etching or catalyst deposition. The density and length of CNTs were determined by synthesis time. For a prolonged growth time, the catalyst activity terminated and the plasma started etching CNTs destructively. CNTs with uniform diameter and length were synthesized on SS substrates subjected to chemical etching for a period of 40 minutes before the growth. The direct contact of CNTs with stainless steel allowed for the better field emission performance of CNTs synthesized on pristine SS as compared to the CNTs synthesized on Ni/Cr coated SS. Finally, fabrication of large arrays of free-standing vertically aligned CNT/SnO2 core-shell structures was explored by using a simple wet-chemical route. The structure of the SnO2 nanoparticles was studied by X-ray diffraction and electron microscopy. Transmission electron microscopy reveals that a uniform layer of SnO2 is conformally coated on every tapered CNT. The strong adhesion of CNTs with SS guaranteed the formation of the core-shell structures of CNTs with SnO2 or other metal oxides, which are expected to have applications in chemical sensors and lithium ion batteries.

Nonlinear quantum transport in low-dimensional electronic devices

The study of transport processes in low-dimensional semiconductors requires a rigorous quantum mechanical treatment. However, a full-fledged quantum transport theory of electrons (or holes) in semiconductors of small scale, applicable in the presence of external fields of arbitrary strength, is still not available. In the literature, different approaches have been proposed, including: (a) the semiclassical Boltzmann equation, (b) perturbation theory based on Keldysh's Green functions, and (c) the Quantum Boltzmann Equation (QBE), previously derived by Van Vliet and coworkers, applicable in the realm of Kubo's Linear Response Theory (LRT). In the present work, we follow the method originally proposed by Van Vliet in LRT. The Hamiltonian in this approach is of the form: H = H°(E, B) + λV, where H0 contains the externally applied fields, and λV includes many-body interactions. This Hamiltonian differs from the LRT Hamiltonian, H = H° - AF(t) + λV, which contains the external field in the field-response part, -AF(t). For the nonlinear problem, the eigenfunctions of the system Hamiltonian, H°(E, B) , include the external fields without any limitation on strength. In Part A of this dissertation, both the diagonal and nondiagonal Master equations are obtained after applying projection operators to the von Neumann equation for the density operator in the interaction picture, and taking the Van Hove limit, (λ → 0 , t → ∞ , so that (λ2 t)n remains finite). Similarly, the many-body current operator J is obtained from the Heisenberg equation of motion. In Part B, the Quantum Boltzmann Equation is obtained in the occupation-number representation for an electron gas, interacting with phonons or impurities. On the one-body level, the current operator obtained in Part A leads to the Generalized Calecki current for electric and magnetic fields of arbitrary strength. Furthermore, in this part, the LRT results for the current and conductance are recovered in the limit of small electric fields. In Part C, we apply the above results to the study of both linear and nonlinear longitudinal magneto-conductance in quasi one-dimensional quantum wires (1D QW). We have thus been able to quantitatively explain the experimental results, recently published by C. Brick, et al., on these novel frontier-type devices.

Estudo da variabilidade da deriva vertical do plasma ionosférico sobre a região de Natal/RN, Fortaleza/CE e Cachoeira Paulista/SP para alguns casos de tempestades magnéticas de abril a setembro de 2000

In this work are presented the results of research on the variation of vertical plasma drift from the F layer that commonly occurs during the period close to the going down of the sun (between 21UT - 22UT), and consisting of an increase in the F layer in time of day and a drop at night on the cities of Natal / RN (The 33.7º, 5.6º S), Fortaleza / CE (38.45º O, 3.9º S) and Cachoeira Paulista / SP (45.0ºO, 22.7º S ). Thus, data was used (ionograms) virtual height t ( h' ) as a function of the frequency F for the layer of the ionosphere. These data were collected through ionossonda type CADI (Canadian Advanced Digital Ionosonde) to the cities of Natal and Fortaleza, and the Digisonde DPS to the town of Cachoeira Paulista. They considered only the data available 2000 maximum solar year. With the virtual height ( h' ) data reduced in the frequencies of 6MHz and 5MHz, the next step was to calculate. The results showed that the variability of the vertical drift rate F ionospheric layer periods of magnetic storms is related both to the penetration of the electric fields as the disturbance dynamo electric fields.