Building damage assessment for deep excavations in Singapore and the influence of building stiffness

One of the biggest issues for underground construction in a densely built-up urban environment is the potentially adverse impact on buildings adjacent to deep excavations. In Singapore, a building damage assessment is usually carried out using a three-staged approach to assess the risk of damage caused by major underground construction projects. However, the tensile strains used for assessing the risk of building damage are often derived using deflection ratios and horizontal strains under 'greenfield' conditions. This ignores the effects of building stiffness and in many cases may be conservative. This paper presents some findings from a study on the response of buildings to deep excavations. Firstly, the paper discusses the settlement response of an actual building - the Singapore Art Museum - adjacent to a deep excavation. By comparing the monitored building settlement with the adjacent ground settlement markers, the influence of building stiffness in modifying the response to excavation-induced settlements is observed. Using the finite element method, a numerical study on the building response to movements induced by deep excavations found a consistent relationship between the building modification factor and a newly defined relative bending stiffness of the building. This relationship can be used as a design guidance to estimate the deflection ratio in a building from the greenfield condition. By comparing the case study results with the design guidance developed from finite element analysis, this paper presents some important characteristics of the influence of building stiffness on building damages for deep excavations.

Investigation of multilingual deep neural networks for spoken term detection

The development of high-performance speech processing systems for low-resource languages is a challenging area. One approach to address the lack of resources is to make use of data from multiple languages. A popular direction in recent years is to use bottleneck features, or hybrid systems, trained on multilingual data for speech-to-text (STT) systems. This paper presents an investigation into the application of these multilingual approaches to spoken term detection. Experiments were run using the IARPA Babel limited language pack corpora (∼10 hours/language) with 4 languages for initial multilingual system development and an additional held-out target language. STT gains achieved through using multilingual bottleneck features in a Tandem configuration are shown to also apply to keyword search (KWS). Further improvements in both STT and KWS were observed by incorporating language questions into the Tandem GMM-HMM decision trees for the training set languages. Adapted hybrid systems performed slightly worse on average than the adapted Tandem systems. A language independent acoustic model test on the target language showed that retraining or adapting of the acoustic models to the target language is currently minimally needed to achieve reasonable performance. © 2013 IEEE.

Short-term effects of drawing water for connectivity of rivers and lakes on zooplankton community structure

During 28-29, September 2005, water was drawn from Hanjiang River and Houguan Lake to the Yangzi River via Sanjiao Lake and Nantaizi Lake in Wuhan in order to provide favorable conditions for ecosystem restoration. To evaluate the feasibility and validity of drawing water as a means of ecosystem restoration, zooplankton populations were studied 3 times (before, immediately after finishing and a month after drawing water) at seven locations from 27 Sept. 2005 to 2 Nov. 2005. Water quality in the lakes was mostly improved and zooplankton species richness decreased as soon as drawing water had finished but increased a month after drawing water. Zooplankton density and biomass was reduced in the lakes by drawing water but was increased at the entrance to Sanjiao Lake because of landform geometry change. Before drawing water, most species in Sanjiao Lake e.g., Brachionus sp. and Keratella sp. were tolerant of contamination. After drawing water oligotrophic-prone species such as Lecane ludwigii and Gastropus stylifer emerged. We conclude that drawing water could be important for improving water quality and favour ecosystem restoration. Dilution of nutrient concentrations may be an important role in the effect.

Avoiding pathologies in very deep networks

Choosing appropriate architectures and regularization strategies of deep networks is crucial to good predictive performance. To shed light on this problem, we analyze the analogous problem of constructing useful priors on compositions of functions. Specifically, we study the deep Gaussian process, a type of infinitely-wide, deep neural network. We show that in standard architectures, the representational capacity of the network tends to capture fewer degrees of freedom as the number of layers increases, retaining only a single degree of freedom in the limit. We propose an alternate network architecture which does not suffer from this pathology. We also examine deep covariance functions, obtained by composing infinitely many feature transforms. Lastly, we characterize the class of models obtained by performing dropout on Gaussian processes.

Thermo-hydro-geomechanical simulations of methane gas production from deep sea methane hydrate formations

A new constitutive model called Methane Hydrate Critical State (MHCS) model was conducted to investigate the geomechanical response of the gas-hydrate-bearing sediments at the Nankai Trough during the wellbore construction process. The strength and dilatancy of gas-hydrate-bearing soil would gradually disappear when the bonds are destroyed because of excessively shearing, which are often observed in dense soils and also in bonded soils such as cemented soil and unsaturated soil. In this study, the MHCS model, which presents such softening features, would be incorporated into a staged-finite-element model in ABAQUS, which mainly considered the loading history of soils and the interaction between cement-casing-formation. This model shows the influence of gas-hydrate-bearing soil to the deformation and stability of a wellbore and the surrounding sediments during wellbore construction. At the same time, the conventional Mohr-Coulomb model was used in the model to show the advantages of MHCS model by comparing the results of the two models.

Present status and changes of the phytoplankton community after invasion of Neosalanx taihuensis since 1982 in a deep oligotrophic plateau lake, Lake Fuxian in the subtropical China

Phytoplankton assemblages in the subtrophical oligotrophic Lake Fuxian, the second deepest lake in China, were investigated monthly from September 2002 to August 2003. A total of 113 species belonging to seven phyla were identified, among them, a filamentous green alga, Mougeotia sp., dominated almost throughout the study period and comprised most of the total phytoplankton biomass. Mougeotia sp. has made a substantial development during the past decades: it was absent in 1957, only occasionally present in 1983, increased substantially in 1993, and became predominant in 2002-2003. It is likely that natural invasion of the Taihu Lake noodlefish (Neosalanx taihuensis) has led to a change of dominant herbivorous zooplankton from small to large calanoid, which has increased grazing pressure on small edible algae, and thus has indirectly favored the development of the inedible filamentous Mougeotia sp.

Fibre optic monitoring of a deep circular excavation

This paper describes part of the monitoring undertaken at Abbey Mills shaft F, one of the main shafts of Thames Water's Lee tunnel project in London, UK. This shaft, with an external diameter of 30 m and 73 m deep, is one of the largest ever constructed in the UK and consequently penetrates layered and challenging ground conditions (Terrace Gravel, London Clay, Lambeth Group, Thanet Sand Formation, Chalk Formation). Three out of the twenty 1-2 m thick and 84 m deep diaphragm wall panels were equipped with fibre optic instrumentation. Bending and circumferential hoop strains were measured using Brillouin optical time-domain reflectometry and analysis technologies. These measurements showed that the overall radial movement of the wall was very small. Prior to excavation during a dewatering trial, the shaft may have experienced three-dimensional deformation due to differential water pressures. During excavation, the measured hoop and bending strains of the wall in the chalk exceeded the predictions. This appears to be related to the verticality tolerances of the diaphragm wall and lower circumferential hoop stiffness of the diaphragm walls at deep depths. The findings from this case study provide valuable information for future deep shafts in London. © ICE Publishing: All rights reserved.

Annihilation of deep level defects in InP through high temperature annealing

Deep level transient spectroscopy (DLTS) and thermally stimulated current spectroscopy (TSC) have been used to investigate defects in semi-conducting and semi-insulating (SI) InP after high temperature annealing, respectively. The results indicate that the annealing in iron phosphide ambient has an obvious suppression effect of deep defects, when compared with the annealing in phosphorus ambient. A defect annihilation phenomenon has also been observed in Fe-doped SI-InP materials after annealing. Mechanism of defect formation and annihilation related to in-diffusion of iron and phosphorus is discussed. Nature of the thermally induced defects has been discussed based on the results. (c) 2007 Elsevier Ltd. All rights reserved.

Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations

Thermally stimulated luminescence spectroscopy has been applied to study the deep centres in unintentionally doped high resistivity GaN epilayers grown by the metal organic chemical vapour deposition method on c-sapphire substrates. Two trap states with activation energies of 0.12 and 0.62 eV are evaluated from two luminescence peaks at 141.9 and 294.7 K in the luminescence curve. Our spectroscopy measurement, in combination with more accurate first-principles studies, provided insights into the microscopic origin of these levels. Our investigations suggest that the lower level at 0.12 eV might originate from C-N, which behaves as a hole trap state; the deeper level at 0.62 eV can be correlated with V-Ga that corresponds to the yellow luminescence band observed in low-temperature photoluminescence spectra.

Annealing ambient controlled deep defect formation in InP

Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy (DLTS), photo induced current transient spectroscopy (PICTS) and thermally stimulated current spectroscopy (TSC). Both DLTS results of annealed semiconducting InP and PICTS and TSC results of annealed semi-insulating InP indicate that InP annealed in phosphorus ambient has five defects, while lid? annealed in iron phospbide ambient has two defects. Such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. The correlation of the defects and the nature of the defects in annealed InP are discussed based on the results.

Deep level defects in high temperature annealed InP

Deep level defects in high temperature annealed semi-conducting InP have been studied by deep level transient spectroscopy (DLTS). There is obvious difference in the deep defects between as-grown InP, InP annealed in phosphorus ambient and iron phosphide ambient, as far as their quantity and concentration are concerned. Only two defects at 0.24 and 0.64 eV can be detected in InP annealed in iron phosphide ambient, while defects at 0.24, 0.42, 0.54 and 0.64 eV have been detected in InP annealed in phosphorus ambient, in contrast to two defects at 0.49 and 0.64 eV or one defect at 0.13 eV in as-grown InP. A defect suppression phenomenon related to iron diffusion process has been observed. The formation mechanism and the nature of the defects have been discussed.

An n-type SiGe/Ge QC structure utilizing the deep Ge quantum well for electron at the Gamma point

In this paper, an n-type Si1-xGex/Ge (x >= 0.85) quantum cascade (QC) structure utilizing a deep Ge quantum well for electrons at the Gamma point is proposed. Based on linear interpolation, a conduction band offset at the Gamma point in a Si1-xGex/Ge ( x >= 0.85) heterostructure is presented, which is suitable for designing a QC laser. This approach has the advantages of a large conduction band offset at the Gamma point, a low lattice mismatch between the Si1-xGex/Ge ( x >= 0.85) active layers and the Si1-yGey ( y > x) virtual substrate, a small electron effective mass in the Gamma band, simple conduction energy band structures and a simple phonon scattering mechanism in the Ge quantum well. The theory predicts that if high-energy electrons are continuously injected into the Gamma band, a quasi-equilibrium distribution of electrons between the Gamma and L bands can be reached and held, i.e., electrons with a certain density will be kept in the Gamma band. This result is supported by the intervalley scattering experiments. In n-type Si1-xGex/Ge ( x >= 0.85) QC structures, population inversion between the laser's upper and lower levels is demonstrated.

Generation and suppression of deep level defects in InP

Deep level defects in as-grown and annealed n-type and semi-insulating InP have been studied. After annealing in phosphorus ambient, a large quantity of deep level defects were generated in both n-type and semi-insulating InP materials. In contrast, few deep level defects exist in InP after annealing in iron phosphide ambient. The generation of deep level defects has direct relation with in-diffusion of iron and phosphorus in the annealing process. The in-diffused phosphorus and iron atoms occupy indium sites in the lattice, resulting in the formation of P anti-site defects and iron deep acceptors, respectively. T e results indicate that iron atoms fully occupy indium sites and suppress the formation of indium vacancy and P anti-site, etc., whereas indium vacancies and P anti-site defects. are formed after annealing in phosphor-us ambient. The nature of the deep level defects in InP has been studied based on the results.