由（双氯代酞酰亚胺）与双酚盐的亲核取代缩聚合成聚酰亚胺的研究

利用邻苯二甲酸酐中苯环上的取代基由于受到两个羰基的吸电子作用有较好的活性，进行亲核取代反应合成聚酰亚胺近年来才引起人们的注意。根据这个反应可以从邻苯二甲酸酐出发，与双酚缩合先合成二酐单体，再与二胺反应合成易加工而性能良好的聚酰亚胺，而且已实现了工业生产。同时也可以从双取代酞酰亚胺出发直接与双酚进行亲核取代缩聚合成相同结构的聚酰亚胺。后者较前者具有合成路线短的优点，又无前者由于多种会反应所引起复杂分子链结构等缺点。文献上对双（硝基酞酰亚胺）与双酚的亲核取代缩聚反应合成聚酰亚胺的研究工作，有一些报导，而对双（氯代酞酰亚胺）与双酚A的亲核取代缩聚亦有专利，从文献报导来看，亲核取代缩聚法合成聚酰亚胺因反应条件要求苛刻，利用此法还不易合成出分子量高的聚合物。如何克服上述缺点，解决合成上的问题，是很有意义的。我们以双酚A与双（4－氯代酞亚胺）二苯醚的亲核取代缩聚反应为重点，采用NaOH溶液成盐的方法进行双（氯代酞酰亚胺）与双酚的亲核取代缩聚合成聚酰亚胺的研究。对影响反应的各种参数，如碱量，温度、固含量，溶剂，代水剂以及水份等对反应的影响，作了比较详细的探索，提出了从双（氯代酞酰亚胺）与双酚出发，用NaOH溶液成盐，通过亲核取代缩聚反应合成聚酰亚胺的比较合适的条件。研究了几种具有代表性的不同结构的双酚分别与双（4－氯代酞酰亚胺）二苯醚和双（3－氯代酞酰亚胺）二苯醚的亲核取代缩聚反应，所得结果表明，在相同的反应条件下，反应的难易一般取决于苯氧负离子的电子密度，和反应中心上正电荷对电子的吸引力，以及聚合物的溶解性。双酚A不仅其氧负离子有很强的亲核性，而且所得聚合的溶解性能也很好，照理应能很好地进行反应，但无论从我们的工作或文献上报导的结果来看，用惯常方法，以NaOH溶液成盐，从双酚A很难得比浓对数粘度较高的聚合物（美国专利从双（氯代酞酰亚胺）出发，合成的双酚A型聚酰亚胺的比浓对数粘度为0.21分升／克，美国General Electric Compang从双（硝茎酞酰亚胺）二苯醚与双酚A缩聚反应所得聚合物的比浓对数粘度是0.23分升／克）。我们从电子密度大的苯氧基虽有较强的亲核能力，但也同时具有较强的与反体系中微量水份形成氢键的能力出发考虑，认为解决问题的关键在于如何使体系中微量水份排除尽，为此我们采用两次代水方法，效果较为明显，使双酚A与双（4－氯代酞酰亚胺）二苯醚缩聚所得聚合物的比浓对数粘度达到0.4分升／克（DMAC，30℃），在此条件下，研究了不同结构的单体的构聚和共聚反应，所合成的一系列均聚和共聚物比浓和粘度在0.4～0.7分升／克范围，且通过共聚可以改善聚合物的溶解性，改进反应情况。在此基础上，我们又对双酚A与双（4－氯代酞酰亚胺）二苯醚的缩聚反应，用NaOH溶值成盐进行了五次代水实险，所得聚合物的分子量又得到进一步提高，其比浓对数粘度达到0.59分升／克。这些研究结果说明我们上述分析是正确的，同时也说明，双氯单体的活是不及双硝基单体，但在我们提出的实验条件下，反应也能很好的进行，而且此种方法没有双硝基单体与酚盐取代反应后所释放的亚硝酸盐所易引起的会反应。我们对所合成的各种不同结构的聚酰亚胺分别利用红外，核磁，X－射线，裂解色谱等进行了结构上的初步分析和探讨。不同结构的聚酰亚胺的红外光谱的显示出所合的聚合物特征峰，结合元素分析结果，并参照合成反应的基本原理证实了所合成的聚酰亚胺的化学结构与所予期的相符。在红外光谱上也初步鉴别了3们异构体聚酰亚胺和4位异构体聚酰亚胺。用~(13)C-NMR对本法所合成的溶解性较好的4种不同结构的聚酰亚胺进行表征，进一步证实了所得聚合物的化学结构，其中两种聚酰胺的~(13)C-NMR谱图与最近文献报导的从双（硝基酞酰亚胺）二苯醚与双酚A进行亲核取代缩聚所得相同结构的聚酰亚胺的~(13)C-NMR表征结果一致。~(13)C-NMR，~1C-NMR鉴定结果还表明利用双(酞酰亚胺)一醚虽需较高温度条件下进行取代缩聚反应，而聚合物的化学结构没有受到破坏。~(13)C-NMR也证明了从双（3－氯代酞酰亚胺）二苯醚出发所合成的聚合物的化学结构。用X－射线对不同结构的聚酰亚胺均聚物和共聚物进行结晶性的初步鉴定，其中由双酚醚和联苯双酚分别与双（4－氯代酞酰亚胺）二苯醚的缩聚产物具有一定程度的结晶，并通过DSC析测发现结晶熔融吸热峰予以进一步证实。普通X－射线鉴定结果对3位和4位异构聚酰亚胺的溶解性能上的差异作出解释。对不同结构的聚酰亚胺用居里点裂解器进行裂解色谱的初步研究和探讨，通过主要裂解产物进一步证明所合成的聚合物的化学结构，并讨论了裂解过程和机理。对各种不同结构的均聚和共聚聚酰亚胺进行溶解性及热稳定性的研究，并与从二胺和二酐出发合成的聚酰亚胺进行比较。亲核取代缩聚法所合成的聚酰胺不仅均有较明显的玻璃化转变，而且也有较好的溶解性能。从二酐与二胺所得相同结构的聚酰亚胺溶解性能不好，可能是由于在热处理环化过程中不易掌握容易产生交联所致。在溶解性能方面还表明3位异构体聚酰亚胺普遍处于4位异构体，由双酚A参与共聚的聚酰亚胺其溶解性能却不同程度地得到改善。热性能研究表明4位异构体聚酰亚胺较3位异构体聚酰亚胺稍稳定，由二酐与二胺缩聚和通过某核取代缩聚所得的相同结构的聚亚胺经DTA和DSC测试，其热稳定性基本相同。

稀土过渡金属复合氧化物的制备结构，电学性质及气敏性研究

本文首次合成了Lar_xSr_xFe_yCor_yO_3(x、y:0.1、0.3、0.5、0.7、0.9)系列化合物和Lar_xBa_xFe_yCor_yO_3(x、y:0.1、0.3、0.5、0.7、0.9)系列化合物，并对其结构，电性及气敏性质进行了研究。关于ABO_3型稀土过渡金属复合氧化物的结构研究，文献上报道比较混乱，不同的人在进行结构研究中采用不同的结构基元得到了不同的晶型和相应的晶胞参数。本文根据上述化合物的X射线谱图，对其进行指标化，得到了上述两系列化合物为主方晶系结构，晶胞参数计算结果表明：在Y = 0.7时，化合物Lar_xSr_xFe_(0.7)Co_(0.3)O_3的晶胞参数随X值的增大而减小。化合物Lar_xBa_xFe_(0.7)Co_(0.3)O_3的晶胞参数随X值的增大而增大。在X = 0.3时，上述两条系列化合物的晶胞参数均随Y值的增大而增大。对以上两系列化合物所表现出的结构变化规律，我们用起决定作用的离子半径大小进行了解释。针对上述两系列化合物，我们研究了它们的电学性质，研究结果表明，上述两系列化合物，在Y = 0.7时，其室温电阻率均随X在 0 < x < 0.5内增大而减小。在0.5 < x < 1内随X值增大而增大。在X = 0.5时的两个化合物具有最小的室温电阻率。在此方面，其电阻率变化规律与LarxMxBO_3(M:Ca、 Sr、 Ba、 B:Fe Co)化合物的变化规律相似。在X = 0.3时，上述两系列化合物的室温电阻率均随Y值的增大而增大，上述两系列化合物所表现出的室温电阻率变化规律可以运用C. Zener的双交换模型加以解释，同时，低温电阻率测定表明：上述两系列化合物在温度100-263K内，表现半导体性质。液氮温度下它们不具有超导性。除以上研究之外，我们针对Lar_xSr_xFe_yCor_yO_3 (X = 0.3、 Y:0.1、0.5、 0.9, Y = 0.7, X:0.1、 0.9）系列化合物初步地进行了气敏性研究。结果为：化合物La_(0.7)Sr_(0.3)Fe_yCor_yO_3 (Y:0.1、 0.5、 0.9)都不同程度地对乙醇、石油醚、 乙炔、烟具有气敏性，它们对乙醇的气敏响应时间约为1分钟，而对石油醚、乙炔和烟的气敏响应时间要用5分钟左右，在上述化合物中，La_(0.7)Sr_(0.3)Fe_(0.5)Co_(0.5)O_3化合物表现出最强的对乙醇、石油醚、乙炔的气敏性。对化合物La_(0.7)Sr_(0.3)Fe_(0.5)Co_(0.5)O_3的进一步研究表明，在乙醇气氛下，化合物La_(0.7)Sr_(0.3)Fe_(0.5)Co_(0.5)O_3在工作电流I_(Dn) = 0.20A时具有最佳的气敏数应。工作电流高于或低于此值都将导致其气敏效应的大小顺序为La_(0.7)Sr_(0.3)Fe_(0.5)Co_(0.5)O_3 > La_(0.7)Sr_(0.3)Fe_(0.9)Co_(0.1)O_3 > La_(0.7)Sr_(0.3)Fe_(0.1)Co_(0.9)O_3对化合物Lar_xSr_xFe_(0.7)Co_(0.3)O_3 (X:0.1、 0.9)的气敏性研究表明：它们只对乙醇和烟具有气敏性。对上述两种气氛的气敏响应时间为5分钟。上述两种化合物中，La_(0.1)Sr_(0.9)Fe_(0.7)Co_(0.3)O_3气敏效应最强。

可溶性甲壳素制取及其稀溶液性质的研究

从螃蟹壳中提取出甲壳素，并进一步进行脱乙酰基反应，制得了脱乙酰度（D.D）在49－100％范围的阳离子聚电解质可溶性甲壳素－壳聚糖。首次通过壳聚糖乙酸溶液的超声波降解快速制得了各个脱乙酰度系列，不同分子量的壳聚糖样品。将不同系列的各个样品在0.2M CH_3COOH + 0.1M CH_3COONa溶液中进行粘度和光散射（L.S）的研究，订定出了不同D.D壳聚糖的Mark-Houwink方程（30±0.05℃）如下：69％：[η]=0.1036*10~(-3) M_w~(1.12) (ml/g) 84%: [η]=1.424*10~(-3) M_w~(0.96) (ml/g) 91%: [η]=11.27*10~(-3)M_w~(0.84) (ml/g) 100%: [η]=16.80*10~(-3)M_w~(0.81) (ml/g)同时，对壳聚糖的其它某些稀溶液性质，如分子尺寸，第二维利系数，扩散因子等进行了求算，并对结果进行了讨论。将胶体滴定法应用到聚电解质壳聚糖的脱乙酰度（D.D）分析上，取得了满意的结果，建立了完整的测试方法，推导出了计算公式：D.D=(N_(PVSK)*ΔV*M_壳)/(5*C)*100%式中：N_(PVSK)-PVSK的当量浓度M_壳－完全脱乙酰基的壳聚糖链节分子量：161.15ΔV－消耗掉PVSK的体积差ΔV=V_1-V_2（升）C－壳聚糖溶液的浓度(g/ml)实验表明，不同D.D值的壳聚糖有着不同的折光指数增量dn/dc，由此创立了一个根据测dn/dc值求壳聚糖脱乙酰度的新方法。在0.2M CH_3COOH/0.1M CH_3COONa中，436nm，25±0.05℃时的计算公式如下：y=9.397*0.943式中：x-dn/dc (ml/g) y-D.D (%)。

Ln-Ba-Cu-Ag-O多元复合物制备、结构及电学性质的研究

本文合成了LnBa_2Cu_(3(1-x))Ag_xO_(7-δ) (x = 0.1,0.3,0.5, Cu = Y,Dy,Ho,Er,Gd) YBa_(2(1-x))Cu_3Ag_xO_(7-δ) (x = 0.05,0.1,0.2,0.3,0.4,0.5,0.6); Y_(1-x)Ag_xBa_2Cu_3O_(7-δ) (x = 0.05,0.1,0.2,0.3,0.5); YBa_2Cu_3O_(7-δ)Ag_x (x = 0.2～2.0), CuBaCu_3O_(7-δ)Ag_x (x = 0.5,1.0, Cu = Dy,Ho,Er)及与之对照的空白样品等一系列超导稀土复合氧化物，对它们的结构、电学性质、Ag的存在状态及Ag的加入方式进行了研究。对这方面的研究目前仍无全面系统的报道。对CuBa_2Cu_(3(1-x))Ag_xO_(7-δ)的研究表明Ag并未取代Cu的格位，少量的Ag加入（x<0.1）就使结构发生破坏，当x>0.1时样品即失去超导性，对光加Ag的YBa_(2(1-x))Cu_3Ag_(2x)Cu_3O_(7-δ)的研究表明，当x<0.6时仍为90k左右的超导体，Ag没有取代Ba的格位，Ag的加入使杂相比例加大，Ag的加入改善了样品晶粒间的弱连接状况，使电流密度明显提高，Ag以单质及复合物形式存在于样品之中。后加Ag方式对结构、电性、无影响没有提高Jc。对光加Ag的Y_(1-x)Ag_xBa_2Cu_3O_(7-δ)的研究表明，x<0.5时样品仍为90k左右超导体，Ag的加入使杂相比例减少，Ag部分以单质及与13a、Cu形成对改善弱连接状有益的复合场的形式存在，部分进入晶格可能占据了Y的格位使C轴变长。Ag的加入改善了样品晶粒间的弱连接状况，从而使Jc大幅度提高，当x=0.1时Jc = 362 A/cm~2，后加Ag的方式对结构、电性、无影响没有提高Jc。对YBa_2Cu_3O_(7-δ)Ag_x的研究表明，加Ag的样品的Jc比不加Ag样品的Jc明显加大，随着Ag量的加大Jc增加，当x=1时Jc最大，当Ag量大于2.0mol时将有大量Ag析出，Ag的加入不影响超导正交结构，部分Ag进入了晶格可能占据了Y的格位，C轴增长，部分以单质及复合物的形式存在，Ag的加入不影响样品的临界温度，使样品电阻降低，电镜分析表明，Ag的加入改善了样品晶粒间的连接状况。CuBaCu_3O_(7-δ)Ag_x与上面体子有相同的性质，在加入1mol Ag得到，Jc：DyBaCu_3O_(7-δ)Ag_(1.0) 113A/cm~2；HoBaCu_3O_(7-δ)Ag_(1.0) 164 A/cm~2 ErBaCu_3O_(7-δ)Ag_(1.0) 177A/cm~2的样品。样品加Ag后密度明显加大，最大可达6.321克/cm~3，硬度也加大具有良好的机械性能。针对在YBaCu_3O_(7-δ)样品中添加Ag，可以做为一种大幅度提高Jc的途径的特点，进行了各种工艺探索，到目前为止，合成出了临界电流密度为570 A/cm~2的样品。

CHARACTERIZATION OF HIGH FLUENCE NEUTRON-INDUCED DEFECT LEVELS IN HIGH-RESISTIVITY SILICON DETECTORS USING A LASER DEEP-LEVEL TRANSIENT SPECTROSCOPY (L-DLTS)

Neutron irradiated high resistivity (4-6 kOMEGA-cm) silicon detectors in the neutron fluence (PHI(n)) range of 5 X 10(11) n/cm2 to 1 X 10(14) n/cm2 have been studied using a laser deep level transient spectroscopy (L-DLTS). It has been found that the A-center (oxygen-vacancy, E(c) = 0.17 eV) concentration increases with neutron fluence, reaching a maximum at PHI(n) almost-equal-to 5 X 10(12) n/cm2 before decreasing with PHI(n). A broad peak has been found between 200 K and 300 K, which is the result of the overlap of three single levels: the V-V- (E(c) = 0.38 eV), the E-center (P-V, E(c) = 0.44 eV), and a level at E(c) = 0.56 eV that is probably V-V0. At low neutron fluences (PHI(n) < 5 X 10(12) n/cm2), this broad peak is dominated by V-V- and the E-centers. However, as the fluence increases (PHI(n) greater-than-or-equal-to 5 X 10(12) n/cm2), the peak becomes dominated by the level of E(c) = 0.56 eV.

INTERVALLEY-GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE AND SI SEMICONDUCTORS BY AB-INITIO PSEUDOPOTENTIAL CALCULATIONS

Intervalley GAMMA - X deformation potential constants (IVDP's) have been calculated by first principle pseudopotential method for the III-V zincblende semiconductors AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb. As a prototype crystal we have also carried out calculations on Si. When comparing the calculated IVDP's of LA phonon for GaP, InP and InAs and LO phonon for AlAs, AlSb, GaAs, GaSb and InSb with a previous calculation by EPM in rigid approximation, good agreements are found. However, our ab initio pseudopotential results of LA phonon for AlAs, AlSb, GaAs, GaSb and InSb and LO phonon for GaP, InP and InAs are about one order of magnitude smaller than those obtained by EPM calculations, which indicate that the electron redistributions upon the phonon deformations may be important in affecting GAMMA - X intervalley shatterings for these phonon modes when the anions are being displaced. In our calculations the phonon modes of LA and LO at X point have been evaluated in frozen phonon approximation. We have obtained, at the same time, the LAX and LOX phonon frequencies for these materials from total energy calculations. The calculated phonon frequencies agree very well with experimental values for these semiconductors.

INTERVALLEY GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE SEMICONDUCTORS BY ABINITIO PSEUDOPOTENTIAL CALCULATIONS

Intervalley GAMMA-X deformation-potential constants (IVDP's) have been calculated by use of a first-principles pseudopotential method for the III-V zinc-blende semiconductors AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, and InSb. When the calculated IVDP's of LA phonons for GaP, InP, and InAs and of LO phonons for AlAs, AlSb, GaAs, GaSb, and InSb are compared with results of a previous calculation that used the empirical pseudopotential method (EPM) and a rigid-ion approximation, good agreement is found. However, our ab initio pseudopotential results on IVDP's of LA phonons for AlAs, AlSb, GaAs, GaSb, and InSb and of LO phonons for GaP, InP, and InAs are about one order of magnitude smaller than those obtained by use of EPM calculations, indicating that the electron redistribution accompanying crystal-lattice deformation has a significant effect on GAMMA-X intervalley scattering for these phonon modes when the anions are being displaced. In our calculations the LA- and LO-phonon modes at the X point have been evaluated in the frozen-phonon approximation. We have also obtained the LAX- and LOX-phonon frequencies for these materials from total-energy calculations, which agree very well with experimental values for these semiconductors. We have also calculated GAMMA-X hole-phonon scattering matrix elements for the top valence bands in these nine semiconductors, from which the GAMMA-X IVDP's of the top valence bands for the longitudinal phonons and transverse phonons are evaluated, respectively.

OXYGEN IN INXGA1-XASYP1-Y GROWN ON GAAS

The measurement of DLTS on the alloy InxGa1-xAsyP1-y (0 less-than-or-equal-to y less-than-or-equal-to 0.3; 0.5 greater-than-or-equal-to x greater-than-or-equal-to 0.35) shows a new signal, labeled as E2, with an activation energy of E(c) - 0.61 eV and the SIMS signals show a large number of oxygen. To clarify is further, the energy of the deep level E2 is quantitatively calculated by using Vogl's tight-binding theory and Hjalmarson's deep level theory. As a result, the deep A1-symmetric level associated with an oxygen on the anion site of InxGa1-xAsyP1-y locates deeply in the band gap. Thus, the level E2 is considered to be induced by the oxygen impurity.

CONSTRUCTION AND APPLICATIONS OF A DUAL MASS-SELECTED LOW-ENERGY ION-BEAM SYSTEM

A direct ion beam deposition system designed for heteroepitaxy at a low substrate temperature and for the growth of metastable compounds has been constructed and tested. The system consists of two mass-resolved low-energy ion beams which merge at the target with an incident energy range 50-25 000 eV. Each ion beam uses a Freeman ion source for ion production and a magnetic sector for mass filtering. While a magnetic quadrupole lens is used in one beam for ion optics, an electrostatic quadrupole lens focuses the other beam. Both focusing approaches provide a current density more than 100-mu-A/cm2, although the magnetic quadrupole gives a better performance for ion energies below 200 eV. The typical current of each beam reaches more than 0.3 mA at 100 eV, with a ribbon beam of about 0.3-0.5 x 2 cm2. The target is housed in an ultrahigh vacuum chamber with a base pressure of 1 x 10(-7) Pa and a typical pressure of 5 x 10(-6) Pa when a noncondensable beam like argon is brought into the chamber. During deposition, the target can be heated to 800-degrees-C and scanned mechanically with an electronic scanning control unit. The dual beam system has been used to grow GaN using a Ga+ and a N+ beam, and to study the oxygen and hydrogen ion beam bombardment effects during carbon ion beam deposition. The results showed that the simultaneous arrival of two beams at the target is particularly useful in compound formation and in elucidation of growth mechanisms.

ON THE FORMATION OF THE SBGA HETEROANTISITE IN METALORGANIC VAPOR-PHASE EPITAXIAL GAAS-SB

Metalorganic vapor-phase epitaxial growth of GaAs doped with isovalent Sb is reported. By increasing the trimethylantimony concentration during growth the total Sb concentration was varied between 1 X 10(17)-1 X 10(19) cm-3. A new deep level defect with an activation energy of the thermal emission rates of E(c) - 0.54 eV is observed. The defect concentration increases with increasing As partial pressure and with increasing Sb doping. It is also found that the EL2 concentration decreases with increasing Sb doping. The new energy level is suggested to be the 0/ + transition of the Sb(Ga) heteroantisite defect. No photocapacitance quenching effect, reflecting a metastable state as seen for EL2 (As(Ga)), is observed for Sb(Ga).

An investigation of the formation mechanisms of electric field domains in GaAs/AlAs superlattices

We have studied the vertical transport and formation mechanisms of electric field domains in doped weakly-coupled GaAs/AlAs superlattices. Under hydrostatic pressure two kinds of sequential resonant tunneling are observed within the pressure range from 0 to 4.5 kbar. A transition from Gamma-Gamma to Gamma-X sequential resonant tunneling occurs at P-t approximate to 1.6 kbar. For P < P-t, the high electric field domain is formed by the Gamma-Gamma process, while for P > P-t it is preferentially formed by the Gamma-X process.

A new structure of In-based ohmic contacts to n-type GaAs

Electrical, structural and reaction characteristics of In-based ohmic contacts to n-GaAs were studied. Attempts were made to form a low-band-gap interfacial phase of InGaAs to reduce the barrier height at the metal/semiconductor junction, thus yielding low-resistance, highly reliable contacts. The contacts were fabricated by e-beam sputtering Ni, NiIn and Ge targets on VPE-grown n(+)-GaAs film (approximate to 1 mu m, 2 x 10(18) cm(-3)) in ultrahigh vacuum as the structure of Ni(200 Angstrom)/NiIn(100 Angstrom)/Ge(40 Angstrom)/n(+)-GaAs/SI-GaAs, followed by rapid thermal annealing at various temperatures (500-900 degrees C). In this structure, a very thin layer of Ge was employed to play the role of heavily doping donors and diffusion limiters between In and the GaAs substrate. Indium was deposited by sputtering NiIn alloy instead of pure In in order to ensure In atoms to be distributed uniformly in the substrate; nickel was chosen to consume the excess indium and form a high-temperature alloy of Ni3In. The lowest specific contact resistivity (rho(c)) of (1.5 +/- 0.5)x 10(-6) cm(2) measured by the Transmission Line Method (TLM) was obtained after annealing at 700 degrees C for 10 s. Auger sputtering depth profile and Transmission Electron Microscopy (TEM) were used to analyze the interfacial microstructure. By correlating the interfacial microstructure to the electronical properties, InxGa1-xAs phases with a large fractional area grown epitaxially on GaAs were found to be essential for reduction of the contact resistance.

Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxN

The electronic properties of wide-energy gap zinc-blende structure GaN, A1N, and their alloys Ga(1-x)A1(x)N are investigated using the empirical pseudopotential method. Electron and hole effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at Gamma and those of the conduction band at Gamma and X are obtained for GaN and AIN, respectively. The energies of Gamma, X, L conduction valleys of Ga(1-x)A1(x)N alloy versus Al fraction x are also calculated. The information will be useful for the design of lattice mismatched heterostructure optoelectronic devices based on these materials in the blue light range application. (C) 1995 American Institute of Physics.

利用Γ－X混合在AlAs/GaAs异质结构实现光生电子、空穴对的持久存储

利用GaAs量子阱中Γ谷速缚态与AlAs层中X谷束缚态在异质结界面处的共振Γ－X混合，使得光生电子不仅在实空间而且在K空间与光生空穴分离开来，从而在结构中形成了持久的电荷极化。这一效应已被C－V特性上所观察到的电容阶跃和正反方向扫描时所出现的双稳滞迟现象所证实。如果将我们的器件用作存储单元，预期可以获得很长的存储时间T_s。同时，由于Γ－X混合隧穿速率很快，光子“读出”仍可以保持很快。

Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy

The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic pressure up to 7 GPa. Two peaks were observed in the alloys with x < 0.01, which are related to excitons bound to isolated Te isoelectronic impurities (Te-1 centers) and Te pairs (Te-2 centers), respectively. Only the Te-2 related emissions were observed in the alloys with 0.01 < x < 0.03. The emissions in the alloys with 0.03 < x < 0.3 are attributed to the excitons bound to the Te-n (n greater than or equal to 3) cluster centers. The pressure coefficient of the Te-1 related peak is 89(4) meV/GPa, about 40% larger than that of the band gap of ZnS. On the other hand, the pressure coefficient of the Te-2 related emissions is only 52(4) meV/GPa, about 15% smaller than that of the ZnS band gap. A simple Koster-Slater model has been used to explain the different pressure behavior of the Te-1 and Te-2 centers. The pressure coefficient of the Te-3 centers is 62(2) meV/GPa. Then the pressure coefficients of the Te-n centers decrease rapidly with further increasing Te composition.